Reorientation,multidomain states and domain walls in diluted magnetic semiconductors

The competition between surface/interface and intrinsic anisotropies yields a number of specific reorientation effects and strongly influences magnetization processes in diluted magnetic semiconductors as (Ga,Mn)As and (In,Mn)As. We develop a phenomenological theory to describe reorientation transitions and the accompanying multidomain states applicable to layers of these magnetic semiconductors. It is shown that the magnetic phase diagrams of such systems include a region of four-phase domain structure with four adjoining areas of two-phase domains as well as several regions with coexisting metastable states. We demonstrate that the parameters of isolated domain walls in (Ga,Mn)As nanolayers are extremely sensitive to applied magnetic field and can vary in a broad range. This can be used in microdevices of magnetic semiconductors with pinned domain walls. For (Ga,Mn)As epilayers with perpendicular anisotropy the geometrical parameters of domains have been calculated.     

Domain wall creation in nanostructures driven by a spin-polarized current

We report on current-driven magnetization reversal in nanopillars with elements having perpendicular magnetic anisotropy. Whereas only the two uniform magnetization states are available under the action of a magnetic field, we observed current-induced Bloch domain walls in pillars as small as 50 x 100 nm(2). This domain wall state can be further controlled by current to restore the uniform states. The ability to nucleate and manipulate domain walls by a current gives insight into the reversal mechanisms of small nanoelements and provides new prospects for ultrahigh density spintronic devices.     

Competition between domain walls and the reverse magnetization in the magnetic relaxation of a Pt/Co/Ir/Co/Pt spin switcher

A multilayer Pt/Co/Ir/Co/Pt/GaAs heterostructures demonstrates a long term (to several hours) magnetic relaxation between two stable states of the magnetization of the system. The magnetization reversal of the heterostructure layers occurs both due to the formation of nuclei of the reverse magnetization domains and as a result of their further growth by means of motion of domain walls. The competition between two these processes provides a nonexponential character of the magnetic relaxation. At 300 K, the contributions of these processes to the relaxation are commensurable, while, at temperatures lower than 200 K, the contribution of the nucleation is suppressed and the magnetic relaxation occurs as a result of motion of the domain walls.     

Breather states in magnetic domain wall racetrack memory samples

Magnetic domain wall racetrack memory samples allow for the controlled motion of isolated magnetic domain walls in a quasi one-dimensional geometry. Here we consider the possibility of the dynamical formation of bound states of domain walls that can be prepared via a suitably chosen external field. Upon switching off the external field, these domain walls oscillate around their common center of mass, with a frequency depending on the relative initial handedness of the domain wall. Such breather states may be observed by detecting the resulting magnetization oscillations.     

Magnetic moment softening and domain wall resistance in Ni nanowires

We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a reduction of the magnetic moments in the domain wall resulting in the enhancement of the domain wall resistance. Experimental studies of the magnetic moment softening may be feasible with modern techniques such as scanning tunneling spectroscopy.     

Properties of domain walls and magnetoresistance in low-doped La<Subscript>2−<Emphasis Type="Italic">y</Emphasis></Subscript>Sr<Subscript>y</Subscript>CuO<Subscript>4</Subscript>

The properties of the diagonal stripe structures of the Hubbard model are theoretically studied in relation to the incommensurate spin order and the magnetic effects detected in the dielectric phase of low-doped La_2?y Sr_yCuO₄ (y ≤ 0.05). The mean-field approximation is used to investigate the properties of the solutions with domain walls between antiphase antiferromagnetic domains that are centered on bonds. Such periodic structures with 2l sites in a unit cell are shown to have 2(l ? 1) levels in the lower and upper Hubbard subbands and two levels that are separated into the Hubbard gap and correspond to quasi-one-dimensional states localized on domain walls. The calculation results are employed to check the assumption that the low conduction of the dielectric LSCO phase occurs via the network of domain walls. The maximum relative change in the magnetoresistance during a spin-flop transition in a critical magnetic field is estimated, and the giant magnetoresistance is qualitatively explained.     

The structure and properties of magnetic inhomogeneities arising in nonuniform magnetic fields

Conditions at which magnetic inhomogeneities like 0° domain walls arise in (111) plates with combined anisotropy and the properties of these inhomogeneities are studied. In local magnetic fields, the inhomogeneities may behave as stable states. Their role in magnetization reversal of the crystals is demonstrated.     

Domain dynamics and magneto-electronics in magnetic thin films and nanowires

Recent theoretical results are highlighted that illustrate some of the interesting phenomena associated with magnetic domain boundary walls. Two problems will be discussed: dynamics associated with domain wall propagation, and effects related to spin transport through domain walls. For the first problem, an example of wall interaction and motion through a random potential will be discussed with reference to the general problem of roughening transitions. Images of domain dynamics in thin films of ion irradiated Co reveal a de-roughening transition associated with long range magnetostatic interactions between pairs of domain walls. A scaling theory of this transition is described in which a curious type of dynamic hysteresis can occur. For the second problem, results from calculations of ballistic charge and spin transport through domain boundary walls are discussed in terms of an effective circuit model.     

Domain walls in magnetic multilayers with a biquadratic exchange

The structure of domain walls in magnetic multilayers is investigated taking into account the uniaxial anisotropy and biquadratic exchange between the layers. Analytical solutions are derived for different types of domain wall structures. The majority of the solutions obtained have no analogs in conventional magnetic materials. The thickness and the energy density per unit area are calculated for the domain walls under investigation. The range of parameters that correspond to more energetically favorable structures of domain walls is established.     

Cobalt antidot arrays on membranes: Fabrication and investigation with transmission X-ray microscopy

We have developed a method to fabricate ferromagnetic antidot arrays on silicon nitride membrane substrates for electron or soft X-ray microscopy with antidot periods ranging from 2 μm down to 200 nm. Observations of cobalt antidot arrays with magnetic soft X-ray microscopy show that for large periods, flux closure states occur between the antidots in the as-grown state and on application of a magnetic field, domain chains are created which show a spin configuration at the chain ends comprising four 90° walls. Pinning of the domain chain ends plays an important role in the magnetization reversal, determining the length of the chains and resulting in preservation of the domain chain configuration on reducing of the applied magnetic field to zero.     

横向偏置场作用的非晶带巨磁阻抗效应理论

采用多畴结构模型,考虑非晶带具有180°畴壁的磁畴及其两面的偏置磁场方向的不同,根据自由能最小原理,Maxwell方程组及带阻尼项的Landau-Lifshitz方程,建立了非晶态合金带在横向偏置磁场作用下的巨磁阻抗效应的理论计算公式. 提出并采用四状态平均磁导率代替单畴模型获得的磁导率,得到了更符合实际的处于偏置场作用的阻抗随外磁场变化的理论结果. 关键词： 偏置磁场 四状态 多畴结构 巨磁阻抗     

Effect of piezomagnetism on coupling of electric and magnetic domain walls in hexagonal manganites

The profiles of antiferromagnetic domain walls in hexagonal manganites RMnO₃ are obtained numerically depending on anisotropy and internal strain due to the lattice distortion at the ferroelectric domain walls. It is found that the piezomagnetism can lower the free energy of the system thus it favors the coupling between electric and magnetic domain walls. Due to the piezomagnetic effect, the clamped antiferromagnetic domain walls with spin orientation angle ψ changing from 0 to π have different profiles comparing with those of ψ changing from 0 to -π, and the former is energetically more favorable than the latter when the internal strain is tensile at the FEL domain walls while it is the contrary for compressive strain. Moreover, the strongest coupling between the FEL domain walls and the favorable AFM domain walls can be achieved at an optimized internal strain.     

Empirical relation between the Hall voltage and domain wall position in a Hall bar geometry

The anomalous Hall effect has been used as a versatile tool for the measurement of various transport phenomena in magnetic systems, particularly those with perpendicular magnetic anisotropy. The anomalous Hall voltage responds not only to the magnetization state but also to the position of magnetic domain walls when the magnetic domain passes through the Hall bar structure. In this study, an empirical relation was developed between the Hall voltage and domain wall position in the Hall bar geometry. This relation was first developed by numerical simulations and then, confirmed by analytical formulae. The validity of the empirical relation was finally verified by experimental results. The present empirical relation provides an experimental method for the electric detection of the position of magnetic domain walls.     

Stabilization of domain walls between traveling waves by nonlinear mode coupling in Taylor-Couette flow

We present a new mechanism that allows the stable existence of domain walls between oppositely traveling waves in pattern-forming systems far from onset. It involves a nonlinear mode coupling that results directly from the nonlinearities in the underlying momentum balance. Our work provides the first observation and explanation of such strongly nonlinearly driven domain walls that separate structured states by a phase generating or annihilating defect. Furthermore, the influence of a symmetry breaking externally imposed flow on the wave domains and the domain walls is studied. The results are obtained for vortex waves in the Taylor-Couette system by combining numerical simulations of the full Navier-Stokes equations and experimental measurements.     

Magnetic field control of 90°, 180°, and 360° domain wall resistance

In the present work, we have compared the resistance of the 90°, 180°, and 360° domain walls in the presence of external magnetic field. The calculations are based on the Boltzmann transport equation within the relaxation time approximation. One-dimensional Néel-type domain walls between two domains whose magnetization differs by angle of 90°, 180°, and 360° are considered. The results indicate that the resistance of the 360° DW is more considerable than that of the 90° and 180° DWs. It is also found that the domain wall resistance can be controlled by applying transverse magnetic field. Increasing the strength of the external magnetic field enhances the domain wall resistance. In providing spintronic devices based on magnetic nanomaterials, considering and controlling the effect of domain wall on resistivity are essential.     

Effect of fluctuations on the forced motion and interactions of domain walls in one-dimensional magnetic systems

Forced motion of a domain wall in the presence of fluctuations of external magnetic field and those of the parameters of the magnetic medium is studied. Calculations for the models of magnetic systems described by the sine-Gordon and Landau-Lifshitz equations are presented. It is shown that the driven motion of domain walls is characterized by the time-independent velocity distribution function which is used to calculate various statistical characteristics of the domain wall. Analysis of the mean velocity of the steady motion of the domain wall leads to the conclusion that the presence of a fluctuating magnetic field results in an increase of the effective relaxation constant of the magnetic system. In case of the sine-Gordon model the mean radiation power accompanying the forced motion of the domain wall is calculated. Inelastic interactions of two domain walls of opposite polarities are described.     

Magnetic domain configurations in exchange-coupled NiO/Co bilayer films

The magnetic domain configurations of exchange-coupled NiO/Co bilayers were investigated by magnetic force microscopy. These bilayers exhibit a well-defined uniaxial anisotropy resulting from the deposition at oblique incidence of the NiO layer. Two types of magnetic contrast are identified: (i) bipolar contrast due to 180° Néel walls in the parts of the walls which are parallel to the easy axis of magnetization, and (ii) monopolar contrast in the parts of the walls separating domains with meeting head-on magnetizations. These latter domain walls have a zigzag shape which represents a compromise between a decrease in the local density of magnetostatic energy and an increase in the wall length. The effect of the Co thickness of the shape on the domains is also discussed.     

Theory of magnetic inhomogeneities in ferrite-garnets with mixed anisotropy

Inhomogeneous states of ferrite-garnet crystals with mixed anisotropy have been studied. A mechanism for the occurrence in these crystals of new types of magnetic inhomogeneities, frozen solitons or 0° domain walls, is presented. Their stability, static properties, and connection with homogeneous metastable states are investigated. The influence of the metastable states on the structure of domain walls of a normal type is also shown.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 51–56, August, 1988.     

Effect of the electron energy on the entry blockage interval during electron scattering by a magnetic film with a strip domain structure

The trajectory of electrons in the stray field of a uniaxial magnetic film containing a strip domain structure (SDS) with a magnetization perpendicular to the sample surface are determined by numerical solution of the equations of motion. The interval of angles between the electron velocity projection onto the film surface and domain walls is determined, in which entry blockage takes place (electron scattering occurs without collisions with the sample surface). It is found that an increase in the electron energy leads to a decrease in this angular interval. The results are analyzed for multiple interactions of an electron moving in the gradient field of an SDS with attracting and repelling domain walls.