Existence of two-dimensional closed orbits and delocalized carriers in the spin-ordered state of quasi-one-dimensional (TMTSF)2PF6

The magnetoresistance in spin-ordered state of quasi-one-dimensional (TMTSF)₂PF₆ has been studied. Both the frequency and anisotropy of the magnetoresistance oscillations are found to be independent of temperature; this proves the temperature independence of the geometry of two-dimensional closed contours at the Fermi level. At the same time, the oscillation amplitude decreases with the temperature, indicating the depopulation of the closed contours in the T = 0 limit. An explanation for the above seemingly controversial results has been proposed. The text was submitted by the authors in English.     

Transport properties and magnetoresistance behavior of Nd0.7Pb0.3MnO3 single crystals

Single crystals of Nd_0.7Pb_0.3MnO₃ with large crystal size were obtained by the flux growth. The temperature dependence of the resistivity and magnetoresistance was measured. It has been discovered that a phase transition occurs from a ferromagnetic-metal (FM) to a ferromagnetic-insulator (FI) phase at 120 K, below the Curie temperature. At the Curie temperature, the samples exhibit a larger value of magnetoresistance (MR) than polycrystalline samples. The second peak of the magnetoresistance has been observed on MR(T) curve below the Curie temperature. The transition properties and magnetoresistance behavior were discussed.     

Study of magnetotransport in double-layered La1.4Ca1.6Mn2O7 manganite: Presence of nano-ferromagnetic domains in paramagnetic matrix

Double-layered manganite La_1.4Ca_1.6Mn₂O₇ has been synthesized using the solid-state reaction method. It had a metal-to-insulator transition at temperature T_M1≈127 K. The temperature dependence of ac susceptibility showed a broad ferromagnetic transition. The two-dimensional (2D)-ferromagnetic ordering temperature (T_C2) was observed as ≈245 K. The temperature dependence of its low-field magnetoresistance has been studied. The low-field magnetoresistance of double-layered manganite, in the temperature regions between T_M1 and T_C2, has been found to follow 1/T⁵. The observed behaviour of temperature dependence of resistivity and low-field magnetoresistance has been explained in terms of two-phase model where ferromagnetic domains exist in the matrix of paramagnetic regions in which spin-dependent tunneling of charge carriers occurs between the ferromagnetic correlated regions. Based on the two-phase model, the dimension of these ferromagnetic domains inside the paramagnetic matrix has been estimated as ∼12 Å.     

Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

The La_1.32Sr_1.68Mn₂O₇ layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T_C) and a metal-insulator transition (T_MI) at 118 K in the ambient pressure. The applied pressure shifts the T_MI to higher temperature values and induces a second metal-insulator transition (T²_MI) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T_C. When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.     

Positive magnetoresistance due to impurity interactions in dilute AuCr alloys

The magnetoresistance of dilute AuCr alloys (2.3–322 at.ppm) has been measured in a wide region of temperature (5-3K) and of magnetic field (up to 60 kG).The “modified Kohler's rule” was used to extract the spin dependent magnetoresistance (?_M) from measured total magnetoresistance.The results has shown that, except for the most dilute specimen, ?_M includes explicitly a positive component in addition to the ordinary negative magnetoresistance proportional to log (H/T). We have attributed this positive ?_M to the effect of the interactions between the Cr impurities by taking consideration of the generalized phase shift expression of magnetoresistance proposed by Soultie.     

Magnetotransport effects in paramagnetic Gd x Mn1 − x S

The electrical resistance of Gd _x Mn_{1 ? x} S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.     

Colossal Magnetoresistance of Layered Manganite La<Subscript>1.2</Subscript>Sr<Subscript>1.8</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript> and Its Description by a “Spin–Polaron” Conduction Mechanism

The resistance of a La_1.2Sr_1.8Mn_2(1–z)O₇ single crystal has been studied in magnetic fields from 0 to 90 kOe. The magnetoresistance at temperature T = 75 K, near which a colossal magnetoresistance maximum is observed, has been successfully described in terms of the “spin–polaron” electric conduction mechanism. This value of the colossal magnetoresistance is due to a three-fold increase in the polaron size. The method of separating contributions of various conduction mechanisms to the magnetoresistance developed for materials with activation type of conduction is generalized to compounds in which a metal–insulator transition is observed. It is found that, at a temperature of 75 K, the contribution of the “orientation” mechanism is maximum (≈20%) in a magnetic field of 5 kOe and almost disappears in fields higher than 50 kOe.     

Anomalous temperature dependence of the magnetoresistance in Co/Cu multilayers

An anomalous temperature dependence of magnetoresistance (MR) of Co/Cu multilayer films witha ～3 Å thick magnetic layer has been established experimentally. The temperature of the MR maximum T _max is shown to coincide with the Néel temperature. The variation of T _max with the Cu layer thickness follows an oscillatory pattern.     

Positive magnetoresistance effect in rare earth cobaltites

The structure, magnetic, and magnetotransport properties of the Pr_0.5Sr_0.5Co_{1 ? x} Fe _x O₃ system have been studied. The ferromagnet-spin glass (x = 0.5)-G-type antiferromagnet (x = 0.7) transitions and the metal—insulator transitions (x = 0.25) have been revealed. It has been established that the magnetoresistance of the metallic ferromagnetic cobaltites changes sign from positive to negative as the external magnetic field increases. The positive component increases and the negative component decreases with decreasing temperature. The negative magnetoresistance increases sharply in the insulating spinglass phase. Possible causes of the low-magnetic-field positive magnetoresistance in the rare earth metallic cobaltites are discussed.     

La0.7Sr0.3MnO3 film prepared by dc sputtering on silicon substrate: Effect of working pressure

La_0.7Sr_0.3MnO₃ films were prepared by dc sputtering on Si (100) substrate at different working pressure. The possibility of controlling the magnetic and transport properties of colossal magnetoresistance film is investigated, which has attracted great research interest for practical application. The as-grown film shows different magnetic, transport and magnetoresistance change at different working pressure at room temperature, which is quite attractive from technological point of view. Maximum magnetoresistance (MR) of ?5.56%, Curie temperature (T_c) of 325 K and metal insulator transition temperature (T_MI) of 278 K was achieved at room temperature.     

Negative slope of resistivity–temperature curve and positive magnetoresistance in antiperovskite ZnCNi3−x Mn x (1.15≤x≤1.5)

In antiperovskite intermetallics ZnCNi_3?x Mn _x , the negative slope coefficient (NSC) dρ/dT of resistivity–temperature curves is observed when x=1.15,1.25,1.4,1.5. The sample with x=1.25 shows a semiconductor-like behavior in the whole temperature range of 15–290 K. By study of the magnetization, magnetoresistance, and low-temperature X-ray diffraction, it is found that Mn dopant significantly affects the physical properties of ZnCNi_3?x Mn _x by changing both the carrier density and the magnetism. The origin of the NSC dρ/dT can be ascribed to the change of hole-like carrier density, which is adjusted by Mn content. The existence of hole-like carriers can be understood rationally by the two-band model. The change of sign of magnetoresistance from positive to negative has been observed in ZnCNi_3?x Mn _x with the change of Mn content, which could be ascribed to the competition between the contribution from field-induced suppression of the thermally excited ferromagnetic spin fluctuations and the Lorentz contribution. When Mn content is low, the Lorentz contribution dominates the sign of magnetoresistance. On the other hand, when Mn content is high, the contribution from field-induced suppression of the thermally excited ferromagnetic spin fluctuations dominates the sign of magnetoresistance.     

Electron transport in manganite bicrystal junctions

The transport and magnetic properties of junctions created in La_0.67Sr_0.33MnO₃ thin films epitaxially grown on substrates with a bicrystal boundary have been investigated. In tilted neodymium gallate bicrystal substrates, the NdGaO₃(110) planes are inclined at angles of 12° and 38°. The temperature dependences of the electrical resistance, magnetoresistance, and differential conductance of the junctions at different voltages have been measured and analyzed. It has been found that the magnetoresistance and electrical resistance of the junction significantly increase with an increase in the misorientation angle, even though the misorientation of the easy magnetization axes remains nearly unchanged. The ratio of the spin-dependent and spin-independent contributions to the conductance of the bicrystal junction increases by almost an order of magnitude with an increase in the misorientation angle from 12° to 38°. The magnetoresistance of the junction increases with decreasing temperature, which is most likely associated with an increase of the magnetic polarization of the electrons. It has been shown that, at low (liquid-helium) temperatures, the conductance depends on the voltage V according to the law V ^1/2, which indicates the dominant contribution from the electron-electron interaction to the electrical resistance of the junction. An increase in the temperature leads to a decrease in this contribution and an increase in the contribution proportional to V ^3/2, which is characteristic of the mechanism involving inelastic spin scattering by surface antiferromagnetic magnons.     

Enhancement of magnetoresistances at room temperature in YSZ doping La0.67Sr0.33MnO3 system

The temperature dependence of the resistance of composite samples (1−x)La_0.67Sr_0.33MnO₃+xYSZ with different YSZ doping level x was investigated at magnetic fields 0-3 T, where YSZ represents yttria-stabilized zirconia. Results show that the YSZ dopant does not only adjust the metal-insulator transition temperature, but also increases the magnetoresistance effect. With increase of YSZ doping level for the range of x<2%, the metal-insulator transition temperature values T_P of the composites decrease, but T_P increases with increase of x further for the range of x>2%. Meanwhile, in the YSZ-doped composites, a broad metal-insulator transition temperature region was found at zero and low magnetic field, which results in an obvious enhanced magnetoresistance in the temperature range 10-350 K. Specially, a larger magnetoresistance value was observed at room temperature at 3 T, which is encouraging with regard to the potential application of magnetoresistance materials.     

Electrical resistivity and magnetoresistance of CeB6

Electrical resistivity and magnetoresistance of CeB₆ single crystal have been measured in the temperature range from 1.3 to 300 K under the magnetic field up to 85 kOe. Three characteristic phases are distinguished consistently with other measurements. The Kondo like behaviour in the resistivity observed in the high temperature phase is fitted by the conventional form for the dilute Kondo state with the Kondo temperature T_K = 5 ～ 10K and the unitarity limit resistivity $\text{?}{}_{\mathrm{u}}\text{? 110 μΩ}$ cm/Ce-atom. The negative magnetoresistance in the middle phase is stronger with increasing magnetic field and with decreasing temperature suggesting rapid destruction of the Kondo state. The magnetoresistance in the low temperature phase exhibits some anomalies suggesting sub-phases corresponding to several kinds of spin ordering.     

Effect of strontium deficiency on the transport and magnetic properties of Pr0.7Sr0.3MnO3

Ceramic samples of Pr_0.7Sr_0.3−x□_xMnO₃ with x⩽0.2 have been investigated by various techniques including ⁵⁵Mn nuclear magnetic resonance, SQUID magnetometry, resistivity and magnetoresistance measurements. On increasing x, the samples remain ferromagnetic at a low temperature with a decreasing Curie temperature, but a metal–insulator transition is observed. Besides, a positive magnetoresistance (MR) at very low temperatures with respect to a negative colossal MR at high temperatures is observed in the Pr_0.7Sr_0.2□_0.1MnO₃ sample.     

The transport and magnetic properties of La–Pb–Mg–Mn–O manganites at low temperatures

The structure, transport properties and the magnetoresistance behavior in the temperature interval 77–400 K of the perovskite-like lanthanum manganites La_0.6Pb_0.4−xMg_x+yMnO₃ (x=0, 0.1, 0.2 and y=0, 0.2) were investigated. Polycrystalline bulk samples were prepared by sol–gel self-combustion and subsequent heat treatment at 1000 °C for different times, 40, 80, 160 and 320 min. All manganites exhibit a peak in the resistivity around 200–250 K, below the ferromagnetic ordering temperature (320–330 K). An isotropic and negative magnetoresistance has been observed in all compounds. Magnetoresistance MR exhibits a peak in the temperature range 130–150 K, below SC–metal transition temperature. Magnitude of MR at the peaks was nearly 27% in the magnetic field of 2 T. At room temperature, a magnetoresistance of 9.5% for La_0.6Pb_0.2Mg_0.2MnO₃ composition was obtained. Longer heat treatment time enhanced the magnetorezistive properties.     

Large room temperature magnetoresistance in YSZ doped La0.67Ba0.33MnO3 composite

The temperature dependence of the resistivity for composite samples of (1−x)La_0.67Ba_0.33MnO₃+xYSZ(LBMO/YSZ) with different YSZ doping level of x has been investigated in a magnetic field range of 0-7000 Oe, where the YSZ represents yttria-stabilized zirconia (8 mol% Y₂O₃+92 mol% ZrO₂). With increasing YSZ doping level, the range of 0-10%, the metal-insulator transition temperature (T_P) decreases. However, the resistivity, specially the low temperature resistivity, increases. Results also show that the YSZ doping level has an important effect on a low field magnetoresistance (LFMR). In the magnetic field of 7000 Oe, a room temperature magnetoresistance value of 20% was observed for the composite with a YSZ doping level of 2%, which is encouraging for potential application of CMR materials at room temperature and low field.     

Anisotropic low-temperature in-plane magnetoresistance in electron doped Nd<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Ce<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CuO<Subscript>4+δ</Subscript>

Nominally electron doped antiferromagnetic tetragonal nonsuperconducting Nd_2?xCe _x CuO_4+δ(x=0.12) has been shown to manifest strong angular dependence of the in-plane magnetoresistance on the orientation of the external magnetic field within the ab plane in many aspects similar to that observed in hole doped YBa₂Cu₃O_7?δ and La_2?xSr_xCuO₄. Specific fourfold angular magnetoresistance anisotropy amounting to several percents was observed in oxygen annealed films at low temperatures and in an external magnetic field up to 5.5 T. The strong temperature dependence and fourfold symmetry observed in our sample points to a specific role of rare-earth (Nd) ions in magnetoresistance anisotropy. At low temperature T = 1.4 K, we observed the unusual transformation of magnetoresistance response with increasing the external magnetic field, which seems to be a manifestation of a combined effect of a crossover between first and second order spin-flop transitions and a field-dependent rare-earth contribution to quasiparticle magnetotransport.     

Positive magnetoresistance peaked at a ferromagnetic transition in Mn-doped GaAs/AlGaAs quantum wells

A large positive magnetoresistance peaked at the Curie temperature has been observed in quantum well structures GaAs/AlGaAs doped by Mn. We suggest a new mechanism of magnetoresistance within low T _c ferromagnets resulting from a pronounced dependence of spin polarization at the vicinity of T _c on the external magnetic field. As a result, any contribution to resistance dependent on the Zeeman splitting of the spin subbands is amplified with respect to the direct effect of the external field. In our case we believe that the corresponding contribution is related to the upper Hubbard band. We propose that the mechanism considered here can be exploited as the mark of ferromagnetic transition.