Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)

First principles calculations of clean and adsorbate-covered surfaces of Si(001) and Ge(001) are reported. Chemical trends in the adsorption of ordered Na, K, Ge, As, Sb, S, Se and Cl overlayers are discussed. The calculations are based on the local-density approximation and employ non-local, norm-conserving pseudopotentials together with Gaussian orbital basis sets. The semi-infinite geometry of the substrate is properly taken into account by employing our scattering theoretical method. From total-energy minimization calculations we obtain optimal surface reconstructions which show asymmetric dimers for Si(001), Ge(001) and Ge:Si(001). For As:Si(001), Sb:Si(001) and Sb:Ge(001), we find symmetric adatom dimers in the equilibrium geometries. S or Se adlayers are found to be adsorbed in bridge positions forming a (1×1) unit cell with a geometry very close to the configuration of a terminated bulk lattice. Cl atoms adsorb on top of the dangling bonds of symmetric Si dimers residing in the first substrate-surface layer. Our calculations for Na:Si(001) and K:Si(001) confirm valley-bridge site adsorption for half monolayer coverage. For full monolayer alkali-metal coverage, adsorption in pedestal and valley-bridge positions is found to be energetically most favourable. The calculated optimal adsorption configurations are in excellent agreement with a whole body of recent experimental data on surface-structure determination. For these structural models, we obtain electronic surface band structures which agree very good with a wealth of data from angle-resolved photoemission spectroscopy investigations.     

Nonlinear surface magneto-optics of ferromagnetic Ni/Cu(001) from first principles

We present first-principles calculations of the nonlinear optical (NLO) response of a Ni/Cu(001) bilayer. The calculations are based on the full potential linearized augmented plane wave (FLAPW) method with the additional implementation of spin–orbit coupling (SOC). On the basis of this set of eigenstates the magneto-optical transition-matrix elements are evaluated. Using the surface-sheet model the optical reflection properties are determined for the cases of the magnetization vector perpendicular to the surface (polar magneto-optical configuration (MOC)) and for the in-plane magnetization (longitudinal MOC). The nonlinear optical susceptibility tensor elements χ⁽²⁾ _ijk for different magnetization directions as well as the spectral dependence of χ⁽²⁾ _ijk, the resulting intensities, and Kerr angles are presented for the Ni/Cu(001) bilayer. The results show that the magnetic tensor elements of the χ⁽²⁾ _ijk tensor are smaller than the nonmagnetic ones by only one order of magnitude, confirming the important role of magnetic properties in the NLO response. Received: 16 October 2001 / Revised version: 8 March 2002 / Published online: 29 May 2002     

III-V compound semiconductor (001) surfaces

There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry. Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002     

Image-potential states on stepped Cu (001) surfaces

Image-potential states on Cu (117) and Cu (119) surfaces were studied by means of two-photon photoelectron spectroscopy. The regular array of steps generates a lateral potential on the vicinal surfaces, which modifies the surface-electronic structure. Compared to Cu (001), the band bottom of the n=1 image-potential states shifts by 40 meV to lower binding energy. The periodicity of the step-induced superlattice manifests itself as back-folding of the n=1 and 2 dispersion bands. At the surface Brillouin zone boundary a mini-gap opens with a width of 135 meV for the first image-potential state on Cu (117). On the vicinal surfaces the lifetime of the image-potential states is reduced by a factor of three as compared to Cu (001). This is attributed to a narrowing of the surface-projected bulk-band gap when projected along the [11n] direction. While the dephasing rate of the first image-potential state is close to the decay rate, higher members of the Rydberg-like series show negligible dephasing. Received: 16 October 2001 / Revised version: 9 April 2002 / Published online: 6 June 2002     

(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces

Received: 21 March 1997/Accepted: 12 August 1997     

Cl2 adsorption on MgO(001) surface supported sodium monolayers: a density functional theory study

The adsorption of Cl₂ Na monolayers supported on the MgO(001) surface has been studied by the density functional method using cluster models embedded in a large array of point charges (PCs). The value of PCs was determined by charge self-consistent technique. The results indicate that Na-promoted MgO(001) surface is an efficient catalyst toward Cl₂ adsorptive decomposition. Besides, it was found that the role of the MgO(001) surface is not passive, which is different from CO adsorption on MgO(001) surface supported Na metal monolayers. The analysis of band and projected density of states indicates that the electron transfer from the surface Mg 3s valence orbital and Na 3s valence orbital to the anti-bonding σ^∗ orbital of Cl₂ is the source of the Cl₂ bond weakening. This is also different from the CO adsorption on MgO(001) surface supported Na metal monolayers, where only the electrons from the Na valence orbital are transferred to the anti-bonding π^∗ orbital of adsorbed CO. Our study suggests that the essence of catalysis is different for CO and Cl₂ adsorption on Na metal monolayers supported an MgO(001) surface.     

Temperature dependence of the InP(001) bulk and surface dielectric function

Received: 14 July 1997/Accepted: 14 July 1997     

Second-harmonic spectroscopy of Ge/Si(001) and Si1-xGex(001)/Si(001)

0.9 Ge_0.1(001)/Si(001) films with SH photon energies 3.1<2hν<3.5 eV near the bulk E₁ critical point of Si(001) or Si_0.9Ge_0.1(001). Ge was deposited on Si(001) by using atomic layer epitaxy cycles with GeH₄ or Ge₂H₆ deposition at 410 K followed by hydrogen desorption. As Ge coverage increased from 0 to 2 monolayers the SH signal increased uniformly by a factor of seven with no detectable shift in the silicon E₁ resonant peak position. SH signals from Si_0.9Ge_0.1(001)/Si(001) were also stronger than those from intrinsic Si(001). Hydrogen termination of the Si_0.9Ge_0.1(001) and Ge/Si(001) surfaces strongly quenched the SH signals, which is similar to the reported trend on H/Si(001). We attribute the stronger signals from Ge-containingsurfaces to the stronger SH polarizability of asymmetric Ge-Si and Ge-Ge dimers compared to Si-Si dimers. Hydrogen termination symmetrizes all dimers, thus quenching the SH polarizability of all of the surfaces investigated. Received: 13 October 1998 / Revised version: 18 January 1999     

Electron properties and surface effects of rare-earth systems

3 . Received: 21 March 1997/Accepted: 12 August 1997     

(e,2e) electron spectroscopy of surfaces

Received: 21 March 1997/Accepted 12 August 1997     

Theoretical study of field emission currents from W(001) surface

We calculated the field emission of the W(001) surface based on a local density functional method. In this method, the electronic structure and the potential under an external electric field are calculated self-consistently using the pseudopotential method. The method is easy to implement and requires minimal computation time beyond that of a standard density functional calculation, while at the same time fully compatible with the density functional formalism. Results such as the enhancement factors are in good agreement with experiments and the effect of the surface reconstruction and the choice of exchange-correlation functionals on the field emission current will be discussed.     

Electronic excitations on clean and adsorbate-covered oxide surfaces

We have studied electronic excitations at the surfaces of NiO (100), Cr₂O₃(111), and Al₂O₃(111) thin films with Electron Energy Loss Spectroscopy (EELS). On NiO (100) we observe surface electronic excitations in the energy range of the band gap which shift upon adsorption of NO. Ab initio cluster calculations show that these excitations occur within the Ni ions at the oxide surface. The (111) surface of Cr₂O₃ is characterized by distinct excitations which are also strongly influenced by the interaction with adsorbates. Temperature-dependent measurements show that two different states of the surface exist which are separated by an activation energy of about 10 meV. For Al₂O₃(111) we present data for a CO adsorbate. The oxide is quite inert with respect to CO adsorption as indicated by desorption temperatures between 38 K and 67 K. Due to the weak interaction with the substrate the a³II valence excitation of CO shows a clearly detectable vibrational splitting which has not been observed previously for a CO adsorbate in the (sub)monolayer coverage range. For several different adsorption state the lifetimes of the a³II state could be estimated from the halfwidths of the loss peaks, yielding values between 10^–15 s for the most strongly bound species and 10^–14 s for the CO multilayer.     

Defect reduction and surface passivation of SiO2/Si by heat treatment with high-pressure H2O vapor

Heat treatment with high-pressure H₂O vapor was applied to improve interface properties of SiO₂/Si and passivate the silicon surface. Heat treatment at 180–420 °C with high-pressure H₂O vapor changed SiO_x films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO₂ films with a Si-O-Si bonding network similar to that of thermally grown SiO₂ films. Heat treatment at 130 °C with 2.8×10⁵ Pa H₂O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiO_x/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiO_x films on the SiO₂ films formed by heat treatment at 340 °C with high-pressure H₂O vapor. The SiO_x deposition reduced the recombination velocity from 100 cm/s to 48 cm/s. Received: 1 March 1999 / Accepted: 28 March 1999 / Published online: 24 June 1999     

Spin splitting of image-potential states on fcc Fe/Cu(100)

Received: 19 October 1998     

The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1−xN spherical quantum dot

Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/Al_xGa_1−xN spherical quantum dot (QD) is investigated using the plane wave basis. The results show that the binding energy is highly dependent on impurity position, QD size, Al content and external field. The binding energy is largest when the donor impurity is located at the centre of the QD and the binding energy of impurity is degenerate for symmetrical positions with respect to the centre of QD without the external electric field. The maximum of the donor binding energy is shifted from the centre of QD and the degenerating energy levels for symmetrical positions with respect to the centre of QD are split in the presence of the external electric field. The binding energy is more sensitive to the external electric field for the larger QD and lower Al content. In addition, the Stark shift of the binding energy is also calculated.     

Hydrogen adsorption on Pd/TiFe (110) surface

Adsorption of hydrogen on the TiFe (110) surface covered by palladium monolayer was investigated using the full potential linearized augmented plane wave method within the local density approximation. Influence of palladium coating to adsorption properties of the TiFe (110) surface as well as difference it from Pd/TiFe (100) are discussed.     

Lifetimes of image-potential states on the Pt(111) surface probed by time-resolved two-photon photoemission spectroscopy

We have investigated the population dynamics of image-potential states on the clean Pt(111) surface. The first two image-potential states have been resolved exhibiting lifetimes of 26±7 fs and 62±7 fs. Those lifetimes are in contrast to the (111) surfaces of Ag and Cu, where the n=2 state is degenerate with bulk states leading to lifetimes shorter than 20 fs. Received: 30 March 2000 / Accepted: 2 September 2000 / Published online: 12 October 2000     

The self-consistent calculation of Si δ-doped GaAs structures

In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si δ-doped GaAs material by using a new alternative method. We will discuss the influence of the δ-doping concentration and the δ-layerthickness on the sub-band structure for a non-uniform distribution, which is taken as different from the known Gaussian distribution. The confining potential, the sub-band energies, the sub-band occupations, and the Fermi energy have been calculated by solving the Schr?dinger and Poisson equations by using the Airy functions self-consistently. Received: 4 December 2000 / Accepted: 31 January 2001 / Published online: 26 April 2001     

Electronic band structures of low-dimensional adsorbate systems: Rare-gas adsorption on transition metals

Angle-resolved photoemission data are dis-cussed for five different Xe adlayers which exhibit electronic structures of different dimensionalities. Xe adsorption on Ni (110)-(1 × 2)-3Hand the (×) R30^° Xe layer on Ru (001) reveal two-dimensional (2D) Xe-derived band structures that are characteristic for hexagonal rare-gas layers. Different Xe 5p dispersion widths on Ni and on Ru are found due to the difference in the Xe-Xe nearest-neighbor distance. For three rare-gas systems (two different Xe coverages on hydrogen-modified Pt (110)-(1 × 2)-H and Kr step decoration on a Pt (997) surface) true one-dimensional (1D) band structures are found. For Xe step adsorption on Pt (997), electronic localized (0D) behavior is observed due to an enlarged Xe-Xe separation. The qualitative differences of the band structures in the case of 2D, 1D and 0D rare-gas systems are demonstrated and are explained by the different dimensionalities of the various structures. Received: 3 August 2000 / Accepted: 4 August 2000 / Published online: 7 March 2001     

Adsorption and diffusion of OH on Mo modified Pt(111) surface: First-principles theory

A first-principles study of adsorption and diffusion of OH on Pt and PtMo(111) surfaces is described. It confirms that the dissociation of water is much easier on PtMo than on pure Pt. Furthermore, we also found that OH binds most strongly at Mo atop site with adsorption energy of −3.32 eV, which is ∼1 eV stronger than binding to the pure Pt(111) surface. OH is much more localized on the PtMo alloy surface than on pure Pt. Both the stranger bond and the higher localization of OH contribute to the enhanced fuel cell performance with PtMo electrodes compared to pure Pt.