On the mechanism of gray scale patterning of Ag-containing As2S3 thin films

We demonstrate an application of photo-induced silver diffusion into chalcogenide glass thin film for gray scale lithography. The gray scale chalcogenide glass masking layer generated in the present experiments was dry etched using reactive ion etching. The etching rate increases almost linearly with the total dose of absorbed light, thus forming the basis of gray scale lithography. Chemical composition as well as electronic structure on the surface of chalcogenide glassy film has been determined by high-resolution X-ray photoelectron spectroscopy (XPS) of the film at different stages of the patterning process. Influence of thermal annealing of chalcogenide film before Ag deposition has been investigated using scanning electron microscopy (SEM) and XPS techniques. It is observed that thermal annealing of the chalcogenide film slows the process of silver diffusion during the proposed processing procedure. A mechanism is proposed to explain the stages of gray scale lithography based on chalcogenide glass photoresists.     

Middle-infrared chalcogenide glass fibers with losses lower than 100 db km−1

Optical losses and mechanical strength of chalcogenide glass fibers prepared by crucible technique are reported. Mechanisms of optical losses in the high-transparancy region of chalcogenide glasses are discussed.     

Plasmon-Stimulated Photodoping in the Thin-Layer As2S3–Ag Structure

Optics and Spectroscopy - The effect of the excitation of surface plasmon polaritons at the silver–chalcogenide glass interface upon the photostimulated diffusion of silver into chalcogenide...     

掺铒硫系玻璃的制备及其微结构光纤的中红外信号放大特性研究

为进一步揭示硫系玻璃基掺Er³⁺微结构光纤对于中红外波段信号的放大特性, 采用熔融淬火法研制了Er³⁺离子掺杂的Ga₅Ge₂₀Sb₁₀S₆₅硫系玻璃, 测试了玻璃样品的吸收光谱和2.7 μm波段荧光光谱, 利用Judd-Ofelt和Futchbauer-Ladenburg理论分别计算得到了Er³⁺离子的辐射跃迁概率、辐射寿命以及2.7 μm波段受激发射截面. 在此基础上, 建立了一个980 nm抽运下该玻璃基掺Er³⁺微结构光纤2.7 μm波段中红外信号的放大模型, 理论上研究了其作为2.7 μm波段中红外信号增益介质时的光放大特性. 结果显示, 硫系玻璃基掺Er³⁺微结构光纤具有优异的高增益和宽带放大品性. 在200 mW抽运功率激励下的100 cm光纤长度上, 最大小信号增益超过了40 dB, 高于30 dB信号增益的放大带宽达到了120 nm (2696—2816 nm). 研究表明, Ga₅Ge₂₀Sb₁₀S₆₅硫系玻璃基掺Er³⁺微结构光纤是一种理想的可应用于2.7 μm波段中红外宽带放大器的增益介质.     

Nano-scaled top-down of bismuth chalcogenides based on electrochemical lithium intercalation

A two-step method has been used to fabricate nano-particles of layer-structured bismuth chalcogenide compounds, including Bi₂Te₃, Bi₂Se₃, and Bi₂Se_0.3Te_2.7, through a nano-scaled top-down route. In the first step, lithium (Li) atoms are intercalated between the van der Waals bonded quintuple layers of bismuth chalcogenide compounds by controllable electrochemical process inside self-designed lithium ion batteries. And in the second step, the Li intercalated bismuth chalcogenides are subsequently exposed to ethanol, in which process the intercalated Li atoms would explode like atom-scaled bombs to exfoliate original microscaled powder into nano-scaled particles with size around 10 nm. The influence of lithium intercalation speed and amount to three types of bismuth chalcogenide compounds are compared and the optimized intercalation conditions are explored. As to maintain the phase purity of the final nano-particle product, the intercalation lithium amount should be well controlled in Se contained bismuth chalcogenide compounds. Besides, compared with binary bismuth chalcogenide compound, lower lithium intercalation speed should be applied in ternary bismuth chalcogenide compound.     

Highly nonlinear chalcogenide glass micro/nanofiber devices: Design, theory, and octave-spanning spectral generation

In this review we consider the basic elements of tapering chalcogenide optical fibers for the generation of extreme spectral broadening through supercontinuum generation. Creating tapered nanofiber devices in chalcogenide fiber, which has an intrinsic nonlinearity that is two orders of magnitude higher than silica, has resulted in the demonstration of octave-spanning spectra using record low power. We first present a brief theoretical understanding of the tapering process that follows from the basic principle of mass conservation, and a geometric construction tool for the visualization of the shape of tapered fibers. This is followed by a theoretical treatment of dispersion engineering and supercontinuum generation in a chalcogenide nanofiber. In the final section, we cover the experimental implementation of the chalcogenide nanofiber and demonstrate an octave-spanning spectrum created with 150 W of peak power.     

Wide-angle stop-gap chalcogenide photonic crystals generated by direct multiple-line laser writing

We present the fabrication and the angle-resolved optical characterizations of three-dimensional chalcogenide photonic crystals with a wide-angle stop gap. Multiple-line scanning provides an effective remedy to the elongation of the focal spot in the z direction during direct laser writing fabrication in high refractive index and highly nonlinear chalcogenide glasses. The aspect ratio of the rods is reduced from 4.46 to 1.53, thus allowing the successful fabrication of three-dimensional chalcogenide photonic crystals with a face-centered cubic symmetry and quasi-circular rods. Suppression of the angle-resolved transmission spectra is observed at a wide range of incident angles.     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

Nonlinear Integrated Optical Waveguides in Chalcogenide Glasses

This paper reports on the study and measurement of the third order optical nonlinearity in bulk sulfide-based chalcogenide glasses; The fabrication process of the ultrafast laser deposited As-S-(Se)-based chalcogenide films and optical waveguides using two techniques: wet chemistry etching and plasma etching.     

Crystallization of chalcogenide glassy semiconductors with admixtures

Crystallization of chalcogenide glassy semiconductors with different contents of admixtures were investigated. It was shown that photoluminescence studies can reveal a lack of the centers responsible for radiation, i.e., possessing negative correlation energy, and the onset of crystallization in chalcogenide glassy semiconductors.     

Variable angle spectroscopic ellipsometry and its applications in determining optical constants of chalcogenide glasses in infrared

The principle of variable angle spectroscopic ellipsometry(VASE) and the data analysis models, as well as the applications of VASE in the characterization of chalcogenide bulk glasses and thin films are reviewed. By going through the literature and summarizing the application scopes of various analysis models, it is found that a combination of various models, rather than any single data analysis model, is ideal to characterize the optical constants of the chalcogenide bulk glasses and thin films over a wider wavelength range. While the reliable optical data in the mid-and far-infrared region are limited, the VASE is flexible and reliable to solve the issues, making it promising to characterize the optical properties of chalcogenide glasses.     

Fabrication and characterization of a pulsed fiber ring laser based on As2S3

We demonstrate the operation of a fiber ring laser using a 19.5 cm segment of As2S3 chalcogenide fiber. The laser is passively mode-locked via nonlinear polarization rotation and provides two different operation regimes of picosecond and noiselike pulses. This ring configuration also enables an accurate measurement of the chromatic dispersion of the chalcogenide fiber.     

Measurement of impurity concentration in chalcogenide glasses using optical principle

Owing to impurity concentration, is important in chalcogenide glass to study various commercial applications, this paper presents a novel technique to measure the impurity concentration in chalcogenide glass at wavelength of 633 nm and 1500 nm using optical principle. Here both reflection and absorption losses are considered to estimate the same impurities. Reflectance is found using plane wave expansion method, where absorption factor is determined using Maxwell's curl equations. Simulation result reveals that reflectance, absorption factor and transmitted intensity vary linearly with respect to different impurity concentrations. The excellent linear variation of transmitted intensity gives an accurate measurement of impurity concentration in chalcogenide at aforementioned wavelength.     

Preparation of dielectric mirrors from high-refractive index contrast amorphous chalcogenide films

We report the preparation of planar 15-layer dielectric mirrors by a thermal evaporation of alternating high refractive index contrast amorphous chalcogenide Sb-Se and Ge-S layers, exhibiting a high-reflection band around 1.55 μm. The layer deposition quality and the thickness accuracy of such prepared chalcogenide multilayers were then checked using transmission electron microscopy. The layer thickness deviation of chalcogenide layers did not exceed ∼7 nm in comparison with the desired thicknesses. The width of Sb-Se/Ge-S layer boundary was approximately ∼3 nm, which is in good agreement with the surface roughness values of thermally evaporated Sb-Se and Ge-S single layers. The optical properties of the prepared 15-layer dielectric mirrors were consistent in temperature range of 20-120 °C; however, at higher temperatures there started apparent structural changes of Sb-Se films, which were followed by their crystallization. Excellent optical properties of chalcogenide materials in the infrared range make them interesting for applications, e.g., in optics and photonics.     

Laser induced recrystallization in lead mercury chalcogenide semiconductor films

Evidence is presented showing that the transition from amorphous to polycrystalline or polycrystalline to expitaxial state occurs gradually in flash evaporated lead mercury chalcogenide semiconductor films, during the process of laser annealing using a CW argon ion laser. TEM examination shows complete crystallization of the lead rich polycrystalline films of lead mercury chalcogenide films deposited at 25°C.     

Ultra-broadband modulation instability gain characteristics in As_2S_3 and As_2Se_3 chalcogenide glass photonic crystal fiber

Based on the designed As_2Se_3 and As_2S_3 chalcogenide glass photonic crystal fiber(PCF) and the scalar nonlinear Schrdinger equation,the effects of pump power and wavelength on modulation instability(MI) gain are comprehensively studied in the abnormal dispersion regime of chalcogenide glass PCF.Owing to high Raman effect and high nonlinearity,ultra-broadband MI gain is obtained in chalcogenide glass PCF.By choosing the appropriate pump parameter,the MI gain bandwidth reaches 2738 nm for the As_2Se_3 glass PCF in the abnormal-dispersion region,while it is 1961 nm for the As_2S_3 glass PCF.     

+1/-1相位掩模板和532nm激光下低损耗As_2S_3硫系光纤布喇格光栅的制备

采用改进型Sagnac干涉光栅写入系统,利用532nm准带隙光曝光源和带+1/-1衍射级的相位掩模板,在两种不同直径的低损耗As_2S_3硫系玻璃光纤上刻写布喇格光栅,并研究曝光期间光栅的动态特性.实验表明,As_2S_3光纤布喇格光栅透射峰值随光纤直径的减小而增强;在曝光过程中,布喇格波长先是较快地向短波长方向移动,随着曝光时间的延长,布喇格波长缓慢地向长波长方向回复.曝光时间为800~1 000s时,在包层直径为140μm的As_2S_3光纤上获得质量良好的布喇格光栅光谱,其透射峰值可达-2.6dB,带宽为0.37nm.对As_2S_3硫系光纤纤芯的光敏性分析结果表明,折射率调制幅度和平均折射率变化随曝光时间分别可达到10-4和10-3数量级.     

Superionic and ion-conducting chalcogenide glasses: Transport regimes and structural features

Chalcogenide glasses are essentially known as amorphous semiconductors with interesting electronic and optical properties. In contrast to vitreous oxide systems which belong mostly to ionic insulators and/or conductors, the ion transport is not common for chalcogenide glasses and was observed for the first time in the seventies. Nevertheless, a higher polarisability of sulphur, selenium or tellurium compared to oxygen and respectively a higher ionic mobility and diffusivity, makes appropriate chalcogenide glassy systems favourable candidates for both fundamental research and practical applications in the field of solid-state ionics. The observed drastically different ion transport regimes that are closely related to the mobile cation distribution in the structure of silver and copper chalcogenide and chalcohalide glasses will be discussed in the present contribution which represents a compilation of recent results obtained by the author.     

Photoinduced stable second-harmonic generation in chalcogenide glasses

We report on photoinduced second-harmonic generation (SHG) in chalcogenide glasses. Fundamental and second-harmonic waves from a nanosecond pulsed Nd:YAG laser were used to induce second-order nonlinearity in chalcogenide glasses. The magnitude of SHG in 20G?20A?60S glass was 10(4) larger than that of tellurite glass with a composition of 15Nb(2)O (5) 85TeO(2) (mol.%). Moreover, no apparent decay of photoinduced SHG in 20G?20A?60S glass was observed after optical poling at room temperature. We suggest that the large and stable value of chi((2)) is due to the induced defect structures and large chi((3)) of the chalcogenide glasses.     

Concentration dependence of radiation-induced changes in the optical properties of Ge<Subscript>x</Subscript>As<Subscript>40−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>60</Subscript> films

Radiation-induced changes in the optical properties of chalcogenide glasses in the Ge-As-S system are investigated as a function of the concentration. Theoretical calculations are performed with due regard for possible constraints on the range of variation in the number of homobonds and heterobonds upon their switching in the structural network of chalcogenide glasses. The experimental data are obtained upon irradiation of Ge_xAs_40?xS₆₀ thin films with fast electrons (6 MeV). The possible mechanism of structural transformations responsible for the specific features in the concentration dependence of the change in the band gap of chalcogenide glasses is discussed.