Impedance and dielectric studies of ferroelectric SrBi2Nb2O9 ceramics

This paper reports the dielectric and impedance characteristics of ferroelectric SrBi₂Nb₂O₉ (SBN) ceramics in the 100 Hz-1 MHz frequency range at various temperatures (300-823 K). A strong low frequency dielectric dispersion (LFDD) associated with an impedance relaxation has been found to exist in these ceramics in the temperature range 573-823 K. The Z″ of the AC complex impedance showed two distinct slopes in the frequency range 100 Hz-1 MHz suggesting the existence of two dispersion mechanisms. This non-ideal behavior has been explained on the basis of the expression, Z*=R₀/(1+(iω/ω₁)^m+(iω/ω₂)ⁿ) [J. Phys. Chem. Solids 53 (1992) 1] where ω₁ and ω₂ characterize the lattice response and the charge carrier behavior, respectively. The exponents m and n were obtained from the curve fitting. The exponent n was found to exhibit a minimum at the Curie temperature, T_c (723 K) whereas the m was temperature independent.     

Investigations of structural, dielectric and ferroelectric behavior of europium substituted SrBi2Ta2O9 ferroelectric ceramics

Europium substituted samples of the compositions Sr_1−xEu_xBi₂Ta₂O₉ (x=0.0,0.025,0.050,0.10 and 0.20) were synthesized by solid state reaction method and studied for their structural, dielectric and ferroelectric properties. The X-ray diffractograms confirmed the formation of single phase layered perovskite structure in all the samples. The temperature variation of dielectric constant shows that the Curie temperature (T_c) decreases on increasing concentration of europium. The dielectric loss reduces significantly with europium addition. The P-E studies of the Eu-substituted SBT ceramics show that the remanent polarization increases with increasing concentration of europium.     

Synthesis and characterizations of Ho2O3 modified SrBi2Nb2O9 ceramics

SrBi_2-xHo_xNb₂O₉ (0?≤?x?≤?0.5) ceramics were prepared through the conventional solid state route. The materials have been characterized by XRD, FTIR and SEM. All compounds were pure and well crystallized. In FTIR spectroscopy, the spectral patterns of the crystal structures of these polyphases are unique and smoothly different from each other. The grains were prone to become spherical with increasing x. Dielectric and electrical properties of these materials as a function of temperature at different frequencies have been carried out. The dielectric constant and dielectric loss were found to decrease with an increase of the holmium concentration at room temperature. Reaching up to x?=?0.4 and x?=?0.5, the diffusivity increases, leading to the occurrence of relaxor behavior. 20–30 at.% Ho doping on the Bi-site can fill up the oxygen vacancies and decrease the AC conductivity. However, at higher doping levels greater than 40% holmium oxide, the AC conductivity is found to increase.     

Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications

Ferroelectric SrBi₂Ta₂O₉ (SBT) thin films were grown on p-type (1 0 0) Si substrates by radio frequency sputtering technique. The crystallinity of the films was studied using grazing incidence X-ray diffraction pattern. The spectra showed the films were polycrystalline with dominant orientation along (1 1 5) plane. The surface morphology was investigated by atomic force microscope. The chemical composition was studied by Rutherford back-scattering, which yielded a near stoichiometric composition of SBT. The capacitance–voltage characteristics of Al/SBT/Si capacitors measured at 100 kHz showed a hysteresis nature with a clockwise rotation and the memory window of the hysteresis loop was 0.88 V with the gate voltage ±5 V. The interface trap density was calculated by using Hills method at room temperature and a value in the order of 10¹¹–10¹² eV⁻¹ cm⁻² was found depending on the crystallization temperature at midgap region.     

Sr位Nd掺杂对SrBi$lt;sub$gt;2$lt;/sub$gt;Nb$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;9$lt;/sub$gt;性能的影响及机理研究

采用传统固相法制备了（Sr_1-3x/2A_x/2Nd_x）Bi₂Nb₂O₉（x=0,0.05,0.1和0.2）陶瓷,并系统研究了Nd离子取代Sr离子对SrBi₂Nb₂O₉性能的影响及其作用机理.研究结果表明：Sr_1-3x/2A_x/2Nd_xBi₂Nb₂O₉的介电常数和介电损耗随温度变化的行为具有明显的离子松弛极化特征.Nd³⁺对Sr²⁺的部分取代,导致Sr_1-3x/2A_x/2Nd_xBi₂Nb₂O₉剩余极化强度P_r稍有下降,但其压电系数d₃₃却有所增加,根据铁电热力学理论,这是Nd³⁺对Sr²⁺取代导致材料介电常数增大所致.Sr_1-3x/2A_x/2Nd_xBi₂Nb₂O₉的居里温度（T_C）没有随Nd含量的增加而变化,拉曼光谱技术分析表明这是其NbO₆八面体畸变程度没有发生变化所致.Nd³⁺取代Sr²⁺提高了材料的介电常数ε_r、压电系数d₃₃、机电耦合系数K_p,同时降低了机械品质因数Q_m,但是谐振频率温度系数C值没有改变. 关键词： 压电陶瓷 介电性能 压电性能 拉曼光谱     

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

SrBi₂Nb₂O₉ (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The influence of deposition parameters such as target-to-substrate distance, oxygen pressure and annealing temperature on film crystallization behavior was investigated by X-ray diffraction. Results indicated that the films grown at the optimum processing conditions have polycrystalline structure with a single layered perovskite phase. The optical transmittance of the films prepared at various oxygen pressures was measured in the wavelength range 200–900 nm using UV–vis spectrophotometer. The results showed that there is a red shift in the optical absorption edge with a rise in the oxygen pressure. Refractive index as a function of wavelength and optical band gap of the films were determined from the optical transmittance spectra. The results indicated that the refractive index increases with increasing oxygen pressure at the same incident light wavelength, while the band gap reduces from 4.13 to 3.88 eV. It may be attributed to an increase in packing density and grain size, and decrease in oxygen defects.     

Properties of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Using the standard solid-state reaction method, several vanadium-doped ferroelectric ceramics of type SrBi_4−x/3Ti_4−xV_xO₁₅ (SBTV−x) were synthesized. The vanadium doping content, x, rangs from 0.00 to 0.06. The crystal structure of SrBi₄Ti₄O₁₅ is not affected by V-doping. The electric breakdown voltage of the samples increases with V content. Meanwhile, V-doping results in a notable enlargement of remnant polarization (2P_r). The 2P_r of STBV−0.03 reaches a very large value, which is over 50 μC/cm² and is nearly twice greater than that at zero doping. The Curie temperatures of V-doped samples decrease slightly in comparison with that of SrBi₄Ti₄O₁₅. V-doping can improve the electric properties of SrBi₄Ti₄O₁₅ without sacrificing its thermal stableness.     

Properties of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

Using the standard solid-state reaction method, several vanadium-doped ferroelectric ceramics of type SrBi_4−x/3Ti_4−xV_xO₁₅ (SBTV-x) were synthesized. The vanadium doping content, x, ranges from 0.000 to 0.06. The crystal structure of SrBi₄Ti₄O₁₅ is not affected by V-doping. The electric breakdown voltage of the samples increases with V content. Meanwhile, V-doping results in a notable enlargement of remnant polarization (2P_r). The 2P_r of STBV-0.03 reaches a very large value, which is over 50 μC/cm² and is nearly twice greater than that at zero doping. The Curie temperatures of V-doped samples decrease slightly in comparison with that of SrBi₄Ti₄O₁₅. V-doping can improve the electric properties of SrBi₄Ti₄O₁₅ without sacrificing its thermal stableness.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Effects of (LiCe) co-substitution on the structural and electrical properties of CaBi2Nb2O9 ceramics

The piezoelectric, dielectric, and ferroelectric properties of the (LiCe) co-substituted calcium bismuth niobate (CaBi₂Nb₂O₉, CBNO) are investigated. The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tanδ decreased. This makes poling using (LiCe) co-substitution easier. The ceramics (where □ represents A-site Ca²⁺ vacancies, possess a pure layered structure phase and no other phases can be found. The Ca_0.88(LiCe)_0.04□_0.04Bi₂Nb₂O₉ ceramics possess optimal piezoelectric properties, with piezoelectric coefficient (d₃₃) and Curie temperature (T_C) found to be 13.3 pC/N and 960 ℃, respectively. The dielectric and piezoelectric properties of the (LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours. This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.     

Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

The complex dielectric and AC conductivity response of BaBi₂Nb₂O₉ relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the ‘universal relaxation law’. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law σ(ω)=σ₀+Aωⁿ. The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of n followed the Vogel-Fulcher relation with activation energy of about 0.14 eV.     

Structural and impedance properties of Ca3Nb2O8 ceramics

Polycrystalline sample of Ca₃Nb₂O₈ was prepared by a high-temperature solid-state reaction technique. X-ray diffraction (XRD) analysis confirms the formation of single-phase compound of hexagonal (rhombohedral) crystal structure at room temperature. Scanning electron micrograph of the material showed uniform grain distribution on the surface of the sample. Detailed studies of dielectric properties of the compound, studied in a wide frequency range (10²-10⁶ Hz) at different temperatures (25-500 °C), exhibit a dielectric anomaly suggesting phase transition of ferroelectric-paraelectric and structural type at 300 °C. Electrical properties of the material were analyzed using a complex impedance technique. The Nyquists plot showed the presence of bulk effect in the material in the studied temperature range. Studies of electrical conductivity over a wide temperature range suggest that the compound has negative temperature coefficient of resistance behavior.     

Dielectric and piezoelectric properties of Fe2O3-doped (Na0.5K0.5)0.96Li0.04Nb0.86Ta0.1Sb0.04O3 lead-free ceramics

The effect of a small amount Fe₂O₃ (0.1-2 mol%) doping on the electrical properties of (Na_0.5K_0.5)_0.96Li_0.04Nb_0.86Ta_0.1Sb_0.04O₃ (NKLNTS) ceramics was investigated. It was found that the B-site substitution of Fe³⁺ does not change the crystal structure within the studied doping level and all modified ceramics have a pure tetragonal perovskite structure at room temperature. The addition of Fe₂O₃ can promote the sintering of NKLNTS ceramics, and simultaneously cause the grain growth so that Fe³⁺-doped NKLNTS compositions show degraded densification at higher doping level. Furthermore, the dielectric properties of the NKLNTS ceramics do not show a significant change by Fe₂O₃ doping. However, the addition of Fe₂O₃ was found to have a significant influence on the electric fatigue resistance and the durability against water. The presence of oxygen vacancies caused by the replacement of Fe³⁺ for B-site ions makes the NKLNTS ceramics harder.     

High-temperature crystal structure and electronic properties of cesium niobate Cs2Nb4O11

The antiferroelectric material Cs₂Nb₄O₁₁ transforms at 165 °C from a low-temperature, antiferroelectric phase in space group Pnna to a high-temperature, paraelectric phase in space group Imma; the latter structure has been determined by single-crystal X-ray diffraction. The high-temperature lattice is comprised of niobium-centered tetrahedra and octahedra connected through shared vertices and edges; cesium atoms occupy channels afforded by the three-dimensional polyhedral network. Calculated band structures for both phases predict a bandgap of 3.1-3.2 eV, which is similar to that found experimentally through photoluminescence. The calculated band structure is also conducive to its observed photocatalytic properties.     

Impedance spectroscopy and conductivity studies in SrBi2(Ta1−xWx)2O9 ferroelectric ceramics

Complex impedance spectroscopy (CIS) technique has been utilized to investigate the intra- and intergranular contributions to the impedance in pristine and wolframium (tungsten, W) -substituted strontium bismuth tantalate [SrBi₂(Ta_1−xW_x)₂O₉ (SBTW); x=0.0, 0.025, 0.05, 0.075, 0.1 and 0.2] ceramics as a function of temperature and frequency. CIS studies reveal that the electrical relaxation process was temperature dependent and non-Debye type. The temperature dependence of the relaxation time was found to obey the Arrhenius law. DC conductivity of the studied samples obtained from the CIS data decreased for W content upto x=0.05, followed by a subsequent increase with x>0.05. Electrical conductivity data including the typical values of the activation energies at high temperature indicated that the conductivity in the studied ceramics was essentially due to the contribution of doubly ionized oxygen vacancies to the conduction process.     

Dielectric properties of SrBi2−xPrxNb2O9 ceramics (x=0, 0.04 and 0.2)

SrBi_2−xPr_xNb₂O₉ (x=0, 0.04 and 0.2) ceramics were prepared by a solid state reaction method. X-ray diffraction analysis indicated that single-phase layered perovskite structure ferroelectrics were obtained. A relaxor behavior of frequency dispersion was observed among Pr-doped SrBi₂Nb₂O₉. The degree of frequency dispersion ΔT increased from 0 for x=0-7 °C for x=0.2, and the extent of relaxor behavior γ increased from 0.94 for x=0-1.45 for x=0.2. The substitution of Pr ions for Bi³⁺ ions in the Bi₂O₂ layers resulted in a shift of the Curie point to lower temperatures and a decrease in remanent polarization. In addition, the coercive field 2E_c reduced from 110 kV/cm for an undoped specimen to 90 kV/cm for x=0.2.     

X-ray study of phase transitions in the system of solid solutions K2Pb4Nb10O30-Na2Pb4Nb10O30-K6W4Nb6O30

Boundaries of morphotropic phase transitions region in the system of solid solutions K₂Pb₄Nb₁₀O₃₀-Na₂Pb₄Nb₁₀O₃₀-K₆W₄Nb₆O₃₀ with the structure of the tetragonal tungsten bronze have been specified. Presence of the second morphotropic phase transition, perpendicular to the first one has been revealed. The temperature dependences of the structural parameters of some compounds have been investigated. The compounds with high values of Curie temperatures and working temperatures have been obtained.     

Tuning the multiferroic properties of Pb(Fe1/2Nb1/2)O3 by cationic substitution

A series of substituted lead iron niobate compounds with the general formula Pb²⁺_(1−x)A^Z_x(Fe_{{(1−(2−Z)x)/2}}Nb_{{(1+(2−Z)x)/2}})O₃ (0<x<0.6 and A=La³⁺, K⁺ or Sr²⁺) were prepared by a modified solid-state synthesis. The relative concentrations of Fe³⁺ and Nb⁵⁺ were adjusted to compensate the charge imbalance due to the aliovalent substitution. The dielectric constant and magnetic susceptibilities were studied as a function of temperature. The temperature of the dielectric maximum, T_M, of the substituted compounds decreased linearly with increasing concentration of the substituent ions. The magnetic measurements showed an antiferromagnetic transition at temperatures T_N1 due to the superexchange interactions mediated by Fe–O–Fe and an additional antiferromagnetic-type transition at T_N2. T_N1 linearly increased with the increasing concentration of Fe³⁺ ion at the B-site of ABO₃-type substituted compounds. T_M is shown to be directly dependent on the concentration of the ferroactive Nb⁵⁺ ions at the B-site and Pb²⁺ ions at the A-site.     

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺，制备了钼掺杂铁电陶瓷样品SrBi₄Ti₄O₁₅(SBTi)铁电陶瓷SrBi_4-2x/3Ti_4-xMo_xO₁₅(x=0.00，0.003，0.012，0.03，0.06，0.09).X射线衍射的结果表明，样品均为单一的层状钙钛矿结构相，Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现，样品晶粒为片状，随掺杂量的增加，晶粒逐 关键词： 4Ti₄O₁₅')" href="#">SrBi₄Ti₄O₁₅ Mo掺杂 剩余极化 居里温度     

Phase transitions in ferroelectric ceramics of the type Sr0.5Ba0.5Nb2O6

The ferro-paraelectric transition in Sr_0.5Ba_0.5Nb₂O₆ ceramics has been studied by measuring the dielectric pennitivity as a function of temperature at different frequencies. Experimental results in the transition region over ?'_max fit the relation $\text{1}\text{?'}\text{?}\text{1}\text{?'}{}_{\max }\text{= A(T ?}\text{T}{}_0\text{)}{}^{\mathrm{\gamma }}$ with γ > 1, as is typical for dif transitions. In an interval of temperatures of 17°C over T₀ (=Tfor?'_max), γ = 2. Using the relaxors' model of Kirillov-Isupov an equation is inferred in order to compute the activation energy of the relaxors as a function of parameters directly obtained from the experimental results.