On the metal distribution in the system GeTe−Sb2Te3

The structures of GeSb₂Te₄, Ge₂Sb₂Te₅ and GeSb₄Te₇ are not determined completely by means of classical X-ray or electron diffraction studies. We have measured the Mössbauer parameters of¹²¹Sb in these compounds as well as in their binary constituent Sb₂Te₃ as an attempt to improve our knowledge on the question.     

Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3 and Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems

In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and p-type 3 wt.% Te-doped Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.     

Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

Structural details of the amorphous binary GeTe and ternary Ge₂Sb₂Te₅ (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure consisting of corner- and edge-sharing tetrahedra of the type GeTe_4−nGe_n (n=0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb₂T₃ component in Raman scattering; reasons about this explanation, as well as for the lack of any Te–Te bonds are briefly described.     

Pressure-induced site-selective disordering of Ge2Sb2Te5: a new insight into phase-change optical recording

We demonstrate that , the material of choice in phase-change optical recording (such as DVD-RAM), can be rendered amorphous by the application of hydrostatic pressure. It is argued that this structural change is due to a very strong second-nearest-neighbor Te-Te interaction that determines the long-range order in the metastable cubic phase of and also to the presence of vacancies. This newly discovered phenomenon suggests that pressure is an important factor for the formation of the amorphous phase which opens new insight into the mechanism of phase-change optical recording.     

Local atomic structure in molten Si3Sb2Te3 phase change material

By means of ab initio molecular dynamics calculations, we have studied the local structures of liquid and amorphous Si₃Sb₂Te₃. The results show that all the constitute elements in liquid Si₃Sb₂Te₃ are octahedrally coordinated. While in amorphous state, Sb and Te atoms are mainly octahedrally coordinated and Si atoms are mainly tetrahedrally coordinated. In both states, Si is mainly homo-bonded by Si. Finally, we proposed a phase separation model for liquid and amorphous Si₃Sb₂Te₃, which is responsible for the good performance of Si₃Sb₂Te₃ alloy as a phase change material.     

Scanning tunneling microscope light emission spectra of polycrystalline Ge2Sb2Te5 and Sb2Te3

We have observed scanning tunneling microscope light emission (STM-LE) spectra of Ge₂Sb₂Te₅ and Sb₂Te₃. Although these chalcogenide alloys exhibit band gaps less than 0.5 eV, the STM-LE was observed with a narrow spectral width at a photon energy of 1.5 eV for both materials. By analyzing its bias voltage, polarity, and temperature dependencies combined with recently reported theoretical electronic structures, we concluded that the STM-LE is excited by electronic transitions taking place in the local electronic structure having a direct gap-like shape with a band gap of 1.5 eV, commonly found in the electronic structures of both materials.     

Proximity-Effect-Induced Superconductivity in Nb/Sb2Te3-Nanoribbon/Nb Junctions

Nanohybrid superconducting junctions using antimony telluride (Sb₂Te₃) topological insulator nanoribbons and Nb superconducting electrodes are fabricated using electron beam lithography and magnetron sputtering. The effects of bias current, temperature, and magnetic field on the transport properties of the junctions in a four-terminal measurement configuration are investigated. Two features are observed. First, the formation of a Josephson weak-link junction. The junction is formed by proximity-induced areas in the nanoribbon right underneath the inner Nb electrodes which are connected by the few tens of nanometers short Sb₂Te₃ bridge. At 0.5 K a critical current of 0.15 µA is observed. The decrease of the supercurrent with temperature is explained in the framework of a diffusive junction. Furthermore, the Josephson supercurrent is found to decrease monotonously with the magnetic field indicating that the structure is in the small-junction limit. As a second feature, a transition is also observed in the differential resistance at larger bias currents and larger magnetic fields, which is attributed to the suppression of the proximity-induced superconductive state in the nanoribbon area underneath the Nb electrodes.     

Excellent thermoelectric performance predicted in Sb2Te with natural superlattice structure

Using first-principles calculations combined with the Boltzmann transport theory, we explore the thermoelectric properties of natural superlattice (SL) structure Sb₂Te. The results show that n-type Sb₂Te possesses larger Seebeck coefficient of 249.59 (318.87) μV/K than p-type Sb₂Te of 219.85 (210.38) μV/K and low lattice thermal conductivity of 1.25 (0.21) W/mK along the in-plane (out-of-plane) direction at 300 K. The excellent electron transport performance is mainly attributed to steeper density of state around the bottom of conduction band. The ultralow lattice thermal conductivity of Sb₂Te is mainly caused by low phonon group velocity and strong anharmonicity. Further analysis shows that the decrease of group velocity comes from flatter dispersion curves which are contributed by the Brillouin-zone folding. The strong anharmonicity is mainly due to the presence of lone-pair electrons in Sb₂Te. Combining such a high Seebeck coefficient with the low lattice thermal conductivity, maximum n-type thermoelectric figure of merit (ZT) of 1.46 and 1.38 could be achieved along the in-plane and out-of-plane directions at room temperature, which is higher than the reported values of Sb₂Te₃. The findings presented here provide insight into the transport property of Sb₂Te and highlight potential applications of thermoelectric materials at room temperature.     

Sb2Te3 纳米结构的制备与表征

以室温热电性能优异的传统热电材料Sb₂Te₃为研究对象,利用化学气相沉积法制备Sb₂Te₃单晶纳米结构,并研究其生长机理.实验结果表明,不加催化剂时Sb₂Te₃易生长成六方纳米盘,在金催化剂条件下定向生长成纳米线.Sb₂Te₃的形貌与其晶体结构和生长机理有关.Sb₂Te₃为三角结构,Sb和     

Tunneling through narrow-gap semiconductor Sb2Te3 barrier

Tunnel experiments have been performed on Au/Sb₂Te₃/Al tunnel junctions to study elastic interelectrode tunneling through the small energy gap of a narrow-gap semiconductor. Tunnel conductance exhibited narrow width conductance peak at zero bias voltage. This behaviour is in accordance with the result of the theoretically calculated tunnel conductance, in which the nonparabolic dispersion relation within the energy gap of the narrow-gap semiconductor used as a tunnel barrier in a metal/narrow-gap semiconductor/metal tunnel structure is included. And some interesting structures are also observed in the conductance curves.     

High pressure transport characteristics of Bi2Te3, Sb2Te3, and BiSbTe3

This paper presents ambient and high pressure measurements of transport properties of the Bi₂Te₃–Sb₂Te₃ series of materials. The electrical resistivity, thermal conductivity, and Seebeck coefficient have been measured on both end compounds and the direct solid solution of the two at pressure up to 10 GPa. An additional discussion involving the high pressure structure will be presented. From this, it was determined that these materials undergo at least two structural phase transitions between 0 and 20 GPa and a discussion is presented regarding this and the changes in the transport properties.     

Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystals

The free carrier concentration of the Sb_2−xIn_xTe₃, Bi_2−xIn_xTe₃ and Bi₂Te_3−xS_x crystals has been determined from the values of the Hall constants and the free carrier concentration of the Sb_2−xTl_xTe₃ has been calculated from the plasma resonance frequency; with increasing value of x, the hole concentration decreases. As the incorporation of the elements In, Tl and S into the lattice Sb₂Te₃ or Bi₂Te₃, respectively, gives rise to the uncharged defects In^x_Sb, Tl^x_Sb, In^x_Bi and S^x_Te, the x causes the decrease of the antisite defects concentration. The proven effect is explained in the following way: the antisite defects can be created only in crystals whose atoms are bound by weakly polarized bonds. The incorporation of In, Tl and S atoms into the crystal lattice of Sb₂Te₃ or Bi₂Te₃ increases the bond polarity, the ionicity of ternary crystals increases. This unfavorably affects the increase of antisite defects whose concentration decreases. The change of the bond polarity is considered from the changes discovered in the formation energy of antisite defects of the above mentioned ternary crystals.     

Point defects in Sb2Te3 crystals doped with Cd atoms

The room temperature values of the electrical conductivity, Seebeck coefficient, as well as the reflectivity curve in the plasma resonance frequency region, were determined for undoped and Cd-doped Sb₂Te₃ crystals. A quantitative analysis of the cadmium content in the samples was carried out using the atomic absorption technique. In comparing the changes in the hole concentration, as determined from the measured parameters, one has found that only about one third of the total number of built-in atoms contributes to the increase in the hole concenration. The observed phenomena are consistent with the assumption that the active defects are most probably Cd-Sb substitutional defects, i.e. Cd atoms in the antimony sublattice, whereas a larger fraction of the number of Cd atoms occupies the van der Waals sites of the Sb₂Te₃ lattice and thus forms uncharged defects.     

Structure and electrical properties of Sb2Te3 and Bi0.4Sb1.6Te3 metastable phases obtained by HPHT treatment

We have obtained the metastable phase of the thermoelectric alloy Bi_0.4Sb_1.6Te₃ with electron type conductivity for the first time using the method of quenching under pressure after treatment at P=4.0 GPa and T=400–850 °C. We have consequently performed comparative studies with the similar phase of Sb₂Te₃. The polycrystalline X-ray diffraction patterns of these phases are similar to the known monoclinic structure α-As₂Te₃ (C2/m) with less monoclinic distortion, β ≈ 92°. We have measured the electrical resistivity and the Hall coefficient in the temperature range of T=77?450 K and we have evaluated the Hall mobility and density of charge carriers. The negative Hall coefficient indicates the dominant electron type of carriers at temperatures up to 380 K in the metastable phase of Sb₂Te₃ and up to 440 K in the metastable state of Bi_0.4Sb_1.6Te₃. Above these temperatures, the p-type conductivity proper to the initial phases dominates.     

Plasma screening of the fundamental absorption edge in crystals of Bi2Te3-Sb2Te3 solid solutions with more than 80 mol % Sb2Te3

The regularities of changes in the optical properties of crystals of Bi₂Te₃-Sb₂Te₃ solid solutions in the range of the effects caused by free-carrier plasma oscillations at a variation in the ratio of Bi₂Te₃ and Sb₂Te₃ components are investigated. It is established that, when the Sb₂Te₃ content in a solid solution exceeds 80 mol %, the fundamental absorption edge undergoes plasma screening. Doping a Sb₂Te₃ crystal with tin increases the free-carrier concentration and plasma frequencies, thus enhancing the screening effect, whereas introduction of 0.1 mol % selenium reduced the plasma frequency and thus removes the fundamental-absorption-edge screening.     

Mixing kinetics and write-once optical recording characteristics of Sb/Se bilayer films

Bilayer Sb/Se films are irradiated with 12 ns pulses from an ArF laser (extended areas) and from a focused Ar⁺ laser (micron-sized areas). Real-time reflectivity measurements are used to determine if the process occurs within the solid or liquid phase and the transformation time, in addition to measure the optical contrast and the medium sensitivity. Transmission electron microscopy is used to analyze the structure of the transformed areas and the medium resolution. The results show that mixing is initiated by preferential melting at the grain boundaries and an amorphous phase is produced upon irradiation at high energy densities. Finally, the characteristics of the mixing process in Sb/Se films as a write-once optical recording mechanism are discussed in terms of the sensitivity and resolution of the recorded spots and the time required for recording.