Preparation and characterization of thin films of monomeric and polymeric octacyanophthalocyanines

Thin films were prepared on substrates, cleavage surface of KCl single crystal, and metallic copper, by reaction of 1,2,4,5-tetracyanobenzene with the substrate at various temperatures. The films were characterized by elemental analysis, IR, and UV/VIS spectroscopies. The films were observed by scanning electron microscopy. The films produced on copper at temperatures between 300 and 400°C consisted of copper octacyanophthalocyanine and its polymer with ladder structure. The ratio of polymer to monomer increased with elevating the reaction temperature. The films were composed of ribbon-like crystals. The film produced on copper above 450°C was composed of an amorphous and continuous layer of polymeric copper phthalocyanine. The film produced on KCl at temperatures between 250 and 350°C consisted of potassium octacyanophthalocyanine and its polymer with ladder structure. The film produced on KCl above 450°C was polymeric potassium phthalocyanine. Those films contained more metal content than that required stoichiometrical.     

Thickness and temperature‐dependent study of Co/Si interface

Thin films of cobalt (10, 40, and 100 nm) are deposited on Si substrate by electron beam physical vapor deposition technique. After deposition, 4 pieces from each of the wafers of silicon substrate were cut and annealed at a temperature of 200°C, 300°C, and 400°C for 2 hours each, separately. X‐ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM) are used to study the structural and morphological characteristics of the deposited films. To obtain TEM images, Co films are deposited on Cu grids; so far, no such types of TEM images of Co films are reported. Structural studies confirm nanocrystalline nature with hexagonal close packed structure of the deposited Co film at lower thickness, while at higher thickness, film structure transforms to amorphous with lower surface roughness value. The particle sizes in all the cases are in the range of 3 to 5 nm. Micro‐Raman spectroscopy is also used to study the phase formation and chemical composition as a function of thickness and temperature. The results confirm that the grown films are of good quality and free from any impurity. Studies show the silicide formation at the interface during deposition. The appearance of new band at 1550 cm⁻¹ as a result of annealing indicates the structural transformation from CoSi to CoSi₂, which further enhances at higher annealing temperatures.     

Electrodeposition of gold particles on aluminum substrates containing copper

Electrodeposition of adhesive metal films on aluminum is traditionally preceded by the zincate process, which activates the aluminum surface. This paper presents an alternative approach for activation of aluminum by using films containing 99.5% aluminum and 0.5% copper. Aluminum/copper films are made amenable for subsequent electrodeposition by anodization followed by chemical etching of aluminum oxide. The electrodeposition of gold is monitored with electrochemical impedance spectroscopy (EIS). Analysis of EIS data suggests that electrodeposition of gold increases the interfacial capacitance from values typical for electrodes with thin oxide layers to values typical for metal electrodes. Scanning electron microscopy examination of aluminum/copper films following gold electrodeposition shows the presence of gold particles with densities of 10(5)-10(7) particles cm(-2). The relative standard deviation of mean particle diameters is approximately 25%. Evaluation of the micrographs suggests that the electrodeposition occurs by instantaneous nucleation followed by growth of three-dimensional semispherical particles. The gold particles, which are electrically connected to the conductive aluminum/copper film, support a reversible faradaic process for a soluble redox couple. The deposited gold particles are suitable for subsequent metallization of aluminum and fabrication of particle-type films with interesting catalytic, electrical, and optical properties.     

Preparation of CuAlO<Subscript>2</Subscript> thin films with high transparency and low resistivity using sol–gel method

CuAlO₂ thin films were deposited on quartz substrates by sol–gel process using copper acetate monohydrate and aluminum nitrate nanohydrate as starting materials and isopropyl alcohol as solvent. The influence of annealing temperature on the film structure and the phase evolution of CuAlO₂ films were investigated, so as to obtain CuAlO₂ films with superior performance. The phase compositions of the films were dependent on the annealing temperature. The films annealed at temperatures below 400 °C were amorphous while those annealed above 400 °C were polycrystalline. The phases of CuO and CuAl₂O₄ appeared gradually with the increase of annealing temperature. When the heat treatment temperature was elevated to 900 °C, the uniform and dense films with single phase of CuAlO₂ were obtained, with a resistivity of 15 Ωcm. The transmittance of the 310 nm-thick CuAlO₂ film is 79% at 780 nm and the direct optical band gap is 3.43 eV.     

Structural and electrochemical studies of annealed LiNiVO4 thin films

We prepared stoichiometric lithium nickel vanadate amorphous thin films by using r.f. magnetron sputtering under controlled oxygen partial pressure. The amorphous films were heated at various temperatures, 300–600 °C, for 8 h. The as‐deposited and annealed thin films were characterized by Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger electron spectroscopy, X‐ray diffraction, scanning electron microscopy and atomic force microscopy. The electrochemical behavior of the various films was studied by the galvanostatic method. The cells were tested in a liquid electrolyte at room temperature, with lithium metal used as the counter and reference electrode. The best electrochemical storage value was obtained with the thin film annealed at 300 °C, which showed superior capacity and small capacity loss during cycling. Copyright © 2007 John Wiley & Sons, Ltd.     

Systematic study on structural phase behavior of CdSe thin films

Cadmium selenide (CdSe) thin films were chemically deposited at room temperature, from aqueous ammoniacal solution using Cd(CH(3)COO)(2) as Cd2+ and Na(2)SeSO(3) as Se2- ion sources. The as-deposited films were uniform, well adherent to the glass substrate, specularly reflective, and red-orange in color. The as-deposited CdSe layers grew with nanocrystalline sphalerite cubic structure along with the amorphous phase present in it, with optical band gap E(g) = 2.3 eV. The films were annealed in air atmosphere for 4 h at different temperatures and characterized for compositional, structural, morphological, and optical properties. XRD and SEM studies clearly revealed the systematic phase transformation of CdSe films from metastable nanocrystalline cubic (zinc blende type) to a mixture of cubic and hexagonal (wurtzite type), and finally into stable hexagonal through different intermediate phases with an improvement in the crystal quality. The films showed a red shift in their optical spectra after annealing.     

50 keV H+ ion beam irradiation of Al doped ZnO thin films: Studies of radiation stability for device applications

Thin films of Al doped ZnO (Al:ZnO) were deposited on two substrates (Si and glass) at room temperature and 300°C using DC magnetron sputtering. These films were bombarded with 50 keV H⁺ beam at several fluences. The pristine and ion beam irradiated films were analysed by X‐ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV‐Vis spectroscopy. The X‐ray diffraction analysis, Hall measurements, Raman and UV‐Vis spectroscopy confirm that the structural and transport properties of Al:ZnO films do not change substantially with beam irradiation at chosen fluences. However, in comparison to film deposited at room temperature, the Al:ZnO thin film deposited at 300°C shows increased transmittance (from 70% to approximately 90%) with ion beam irradiation at highest fluence. The studies of surface morphology by scanning electron microscopy reveal that the ion irradiation yields smoothening of the films, which also increases with ion fluences. The films deposited at elevated temperature are smoother than those deposited at room temperature. In the paper, we discuss the interaction of 50 keV H⁺ ions with Al:ZnO films in terms of radiation stability in devices.     

Enhancement in as-grown CuInSe2 film microstructure by a three potential pulsed electrodeposition method

P-type copper indium diselenide (CuInSe₂) films have been prepared onto ITO substrates by an electrodeposition method, that sequentially applies potential pulses at the deposition potential of each element Cu, Se and In, and then step it back in cyclically to induce the solid state reaction between the elements. Two electrolyte concentrations as well as three different pulse durations were assessed. The resulting films were compared with those deposited at fixed electrode potentials. As-grown films are nanocrystalline and have an E_g ～ 0.95 eV. Raman spectroscopy shows that Se and Cu–Se contents decrease while pulse duration increases and electrolyte concentration decreases. Cu–Se phases are even absent for films grown at the low electrolyte concentration. These results represent a great improvement in the film phase purity reducing the need of post-deposition treatments.     

Structural and electrical properties of nickel–iron thin film on copper substrate for dynamic random access memory applications

Using pulse electrodeposition technique, nano crystalline NiFe films were deposited on conductive copper substrates, under galvanostatic mode in an ultrasonic field at different conditions such as pulse current magnitude, deposition time and ultrasonic bath temperature. As-prepared NiFe/Cu thin films were characterized for phase analysis, surface morphology, surface roughness and resistivity measurements. The results show that the use of ultrasonic bath at room temperature has reduced the surface roughness, resistivity, average grain size and crystallite size of NiFe/Cu thin films. The resistivity is reduced with increasing deposition current from 44.2 µΩ cm at 40 mA to 33.0 µΩ cm at 100 mA. On the other hand, a significant drop of the resistivity from 35.7 to 9.4 µΩ cm is observed if the deposition time was reduced from 5 to 3 min.     

Determination of the cubic to hexagonal structure transition in the metastable system TiN-AlN

Structural transitions of metastable Ti_1–xAl_xN coatings on technically relevant substrates were determined as a function of the Ti/Al ratio. Ti_1–xAl_xN films with different Ti/Al ratios were deposited on high speed steel (HSS) substrates at substrate temperatures of 300?° and 500?°C by means of reactive magnetron sputtering ion plating (MSIP). A Ti/Al compound target was used as well as a cluster arrangement of one Ti and one Al target for comparison. The composition of the films was determined by electron probe microanalysis (EPMA), the crystallographic structure by thin film X-ray diffraction (XRD). The analyses revealed that films deposited with Ti/Al ratios of 44/56 and 36/64 had grown in cubic NaCl structure, a film with a Ti/Al ratio of 32/68 was two-phase, and a Ti/Al ratio of 25/75 led to a hexagonal film in wurtzite structure. Only small differences of the lattice parameters could be observed in dependence of temperature: At 300?°C the lattice parameters of the cubic structure corresponded exactly to Vegard‘s law, whereas they slightly decreased in the films deposited at 500?°C. The application of a cluster arrangement instead of a compound target resulted in nearly the same lattice parameters and peak shapes.     

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Structure and optical properties of CVD molybdenum oxide films for electrochromic application

Vibrational and optical properties of MoO₃ thin films have been studied by Raman and infrared spectroscopy. The films were deposited onto Si substrates at a temperature of 150 °C by chemical vapor deposition of Mo(CO)₆ at atmospheric pressure and different amounts of oxygen in the reactor. The Raman and IR spectral analyses show that the as-deposited films are in general amorphous. Post-deposition annealing at 300 and 400 °C leads to crystallization and the MoO₃ film structure is a mixture of orthorhombic and monoclinic MoO₃ modifications. Transformation of the monoclinic crystallographic modification to a thoroughly orthorhombic layered structure is observed for films heated at temperatures above 400 °C. Electronic Publication     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

Studies on nanocrystalline cadmium sulphide (CdS) thin films deposited by spray pyrolysis

Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. CdS in the form of thin film is prepared at different substrate temperatures by a simple and inexpensive chemical spray pyrolysis technique. The as-deposited thin films have been characterized by XRD, SEM, EDAX and electrical resistivity measurement techniques. The XRD patterns show that the films are polycrystalline with hexagonal crystal structure irrespective of substrate temperature. SEM studies reveal that the grains are uniform with uneven spherically shaped, distributed over the entire surface of the substrates. Compositional analysis reveals that the material formed is stoichiometric at the optimized substrate temperature. The optical band gap energy is found to be 2.44 eV with direct allowed band-to-band transition for film deposited at 300°C. The electrical resistivity measurement shows that the films are semiconducting with a minimum resistivity for film deposited at 300°C. The thermoelectric power measurement shows that films exhibit n-type of conductivity.     

Structure and dielectric properties of HfO<Subscript>2</Subscript> films prepared by a sol–gel route

Mono- and multilayer HfO₂ sol–gel thin films have been deposited on silicon wafers by dip-coating technique using a solution based on hafnium ethoxide as precursor. The densification/crystallization process was achieved by classical annealing between 400 and 600 °C for 0.5 h (after drying at 100 °C). Systematic TEM studies were performed to observe the evolution of the thin film structure depending on the annealing temperature. The overall density of the films was determined from RBS spectrometry correlated with cross section (XTEM) thickness measurements. After annealing at 450 °C the films are amorphous with a nanoporous structure showing also some incipient crystallization. After annealing at 550 °C the films are totally crystallized. The HfO₂ grains grow in colonies having the same crystalline orientation with respect to the film plane, including faceted nanopores. During annealing a nanometric SiO₂ layer is formed at the interface with the silicon substrate; the thickness of this layer increases with the annealing temperature. Capacitive measurements allowed determining the value of the dielectric constant as 25 for four layer films, i.e. very close to the value for the bulk material.     

Electrochemical deposition of cadmium selenide films and their properties: a review

This review gives brief information of experimental conditions employed by different researchers for deposition of cadmium selenide (CdSe) thin films. For the films synthesized at room temperature, films should be annealed and etched to increase the solar cell efficiency. A photoelectrochemical study revealed that values of fill factor and efficiency of CdSe thin films deposited on fluorine-doped tin oxide-coated glass substrates exhibited maximum value compared to the film deposited on titanium and stainless steel substrates. This review will be helpful to researchers entering in field to understand basics about the electrodeposition of CdSe and its development towards next-generation photovoltaics.     

The influence of Se doping upon the phase change characteristics of GeSb2Te4

Se substituted GeSb₂Te₄ films have been investigated for property contrast using electrical four-point-probe measurements, in-situ X-ray diffraction (XRD), a static tester probing the optical changes and atomic force microscopy (AFM). The temperature dependent sheet resistance measurements show two transitions at 125 and 262 °C. The first transition at 125 °C is accompanied by a large resistance change of three orders of magnitude. The resistance change for the second step is less pronounced. In-situ X-ray scattering experiments evidence that the first steep change in resistance is due to an amorphous → NaCl type structural transformation. The second change is caused by the transition from the cubic structure to the stable rhombohedral phase. Power–time effect (PTE) diagrams recorded to monitor the optical contrast of the films upon laser irradiation exhibit a fast recrystallization time of about 100 ns. The change of film roughness and topography between the amorphous and crystalline phase has been determined by AFM.     

Electrochemical Surface Plasmon Resonance Spectroscopy at Bilayered Silver/Gold Films

Bilayered silver/gold films (gold deposited on top of the silver film) were used as substrates for electrochemical surface plasmon resonance spectroscopy (EC-SPR). EC-SPR responses of electrochemical deposition/stripping of copper and redox-induced conformation changes of cytochrome c immobilized onto self-assembled monolayers preformed at these substrates were measured. Influence of the Ag layer thickness and the double-layer capacitance on the EC-SPR behavior was investigated. The results demonstrated that the bilayered Ag/Au metal films produce a sharper SPR dip profile than pure Au films and retain the high chemical stability of Au films. Contrary to the result by the Fresnel calculation that predicts a greater fraction of Ag in the bilayered film should result in a greater signal-to-noise ratio, the EC-SPR sensitivity is dependent on both the Ag/Au thickness ratio and the chemical modification of the surface. Factors affecting the overall SPR sensitivity at the bilayered films, such as the film morphology, potential-induced excess surface charges, and the adsorbate layer were investigated. Forming a compact adsorbate layer at the bilayered film diminishes the effect of potential-induce excess surface charges on the SPR signal and improves the overall EC-SPR sensitivity. For the case of redox-induced conformation changes of cytochrome c, the SPR signal obtained at the bilayered silver/gold film is 2.7 times as high as that at a pure gold film.     

Effects of molecular characteristics and processing conditions on melt‐drawing behavior of ultrahigh molecular weight polyethylene

The effects of molecular characteristics and processing conditions on melt‐drawing behavior of ultrahigh molecular weight polyethylene (UHMW‐PE) are discussed, based on a combination of in situ X‐ray measurement and stress–strain behavior. The sample films of metallocene‐ and Ziegler‐catalyzed UHMW‐PEs with a similar viscosity average MW of ～10⁷ were prepared by compression molding at 180 °C. Stress profiles recorded at 160 °C above the melting temperature of 135 °C exhibited a plateau stress region for both films. The relative change in the intensities of the amorphous scattering recorded on the equator and on the meridian indicated the orientation of amorphous chains along the draw axis with increasing strain. However, there was a substantial difference in the subsequent crystallization into the hexagonal phase, reflecting the molecular characteristics, that is, MW distribution of each sample film. Rapid crystallization into the hexagonal phase occurred at the beginning point of the plateau stress region in melt‐drawing for metallocene‐catalyzed UHMW‐PE film. In contrast, gradual crystallization into the hexagonal phase occurred at the middle point of the plateau stress region for the Ziegler‐catalyzed film, suggesting an ease of chain slippage during drawing. These results demonstrate that the difference in the MW distribution due to the polymerization catalyst system dominates the phase development mechanism during melt‐drawing. The effect of the processing conditions, that is, the including strain rate and drawing temperature, on the melt‐drawing behavior is also discussed. The obtained results indicate that the traditional temperature–strain rate relationship is effective for transient crystallization in to the hexagonal phase during melt‐drawing, as well as for typically oriented crystallization during ultradrawing in the solid state. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2455–2467, 2006     

Effects of deposition temperature and annealing temperature on the morphology and electrochemical capacitance of Ni(OH)2 thin films

In this paper, we report 3D nickel (II) hydroxide thin films with porous nanostructures prepared on Ni foam by direct current electrodeposition from aqueous solution of Ni(NO₃)₂ through basic chemicals. The effect of deposition temperature on Ni(OH)₂ thin film morphology is examined by field emission scanning electron microscopy, which is found to have significant influence on capacitance performance of Ni(OH)₂ thin films. Moreover, the effect of annealing temperature on electrochemical capacitance and long-time stability of Ni(OH)₂ thin films is investigated. An optimum-specific capacitance value of 2,447?farads?g^?1 is obtained for Ni(OH)₂ thin film deposited at 20?°C and annealed at 100?°C.