可用于光存储和光学信息处理的SrS（Eu,Sm）电子俘获薄膜的研究

报道用电子束蒸发法制备的ＳｒＳ（Ｅｕ，Ｓｍ）电子俘获薄膜的特性，给出了这种薄膜的Ｘ射线衍射图、原子力显微镜（ＡＦＭ）形貌观察结果、光谱及存储的图像照片等。结果表明所制备的电子俘获薄膜具有很好的光学特性，具有应用在光存储和光学信息处理上的能力。     

花菁化合物薄膜的光存储性能

采用旋涂工艺制备了花菁染料薄膜,测试了薄膜吸收、透过和反射光谱,通过椭圆偏振光谱计算了薄膜的光学常数,以该花菁染料薄膜为记录层的可录光盘的动态性能和优化功率测试表明,光盘的最佳写入功率在７ｍＷ左右,载楷（ＣＮＲ）可达４７ｄＢ。利用原子力显微镜观测了以不同功率记录后可录光盘的预刻槽形貌。     

亚酞菁薄膜的光谱和光存储性质研究

利用真空蒸镀法制备了一种新的三硝基溴硼亚酞菁（BTN－SubPc)薄膜。在室温下测试了该亚酞菁染料在溶液和薄膜态的吸收光谱、薄膜态的反射和透过光谱，发现该薄膜在500nm-650nm波长范围内具有优良的吸收和反射特性。在632.8nm光盘静态测试仪上测试了覆盖有金属反射层的BTN－SubPc薄膜的静态光存储性能，结果表明，用较小功率和较窄脉宽的激光辐照膜片时，可获得大于30％的反射率对比度，显示出该材料用作短波长光存储介质（特别是用于可录型数字多用光盘）的巨大潜力。     

偶氮接枝的聚氨酯薄膜作为光存储介质的实验研究

利用旋涂法，通过接枝共聚方法制备具有偶氮侧基的聚氨酯高分子聚合物薄膜。利用二倍频YAG激光(532nm)作为激发光，白光光源作为参考光，在室温下测试了该薄膜在激发光作用前后的吸收光谱，发现该薄膜在430一530nm内有较强的吸收。最后给出激发光强度的增大和撤去激发光后，随着无光照时间的延长，380nm与520nm波长处吸收强度的变化趋势。     

光存储的现状及未来

介绍近年来ＣＤ光盘的发展，综合介绍近年来发展较快的磁光存储和全光存储的膜系材料、存储原理。并对光存储今后的发展进行预测     

用于蓝光存储的无机材料的研究及进展

光存储朝着高密度、大容量、高数据传输率方向发展。下一代的光盘记录将从目前广泛使用的红光波段向蓝光波段发展。本文综述了可用于蓝光记录的新一代超高密度光盘无机存储材料的研究现状和新进展。     

甲基红染料掺杂的聚乙烯醇薄膜光存储特性的实验研究

用2倍频小型YAG激光(532nm)作为写入光和擦除光,用He-Ne激光器623.8nm线作为读出光,用CCD作为探测器,研究了不同写入光功率下,甲基红/聚乙烯醇(MR/PVA)薄膜光栅生长的动力学过程和不同擦除光功率下,光栅擦除的动力学过程.结合光栅生长曲线的波动现象,对光存储机制进行了新的探讨.实验发现,两写入光和读出光的功率配比为1:1:1时,可获得最大衍射效率,提出读出光对写入过程具有双重作用的物理模型,对此实验结果给出了合理的解释.     

钒氧化物薄膜的拉曼散射

用射频磁控溅射以纯金属钒做靶材在氩氧混合气体中制备了钒氧化物 (VO2 (B)、V6O1 3、V2 O5)薄膜。报导了钒氧化物薄膜的拉曼光谱 ,结合这些钒氧化物不同的结构特点 ,对它们的拉曼光谱进行了分类讨论     

用于新一代高密度可录光盘的有机材料研究进展

本文在总结近几年来国内外文献和专利报道的最新研究成果基础上，简要阐述了新一代高密度可录光盘的数据存储机理以及激光器工作波长与有机材料薄膜最大吸收波长相匹配的要求，介绍了在蓝(紫)光波段内(350～400nm)具有显著吸收的有机材料研究概况，并讨论了这些有机材料作为新一代高密度可录光盘数据存储介质的可能性。最后，对有机材料用于新一代高密度可录光盘数据存储介质的研究重点以及今后的发展前景进行简要讨论和展望。     

钙钛矿结构氧化物薄膜 的外延生长

在成功地外延生长超导、铁电、铁磁等多种性质的钙钛矿结构氧化物薄膜的基础上,讨论影响氧化物薄膜 外延生长的一些因素.考虑到相形成和薄膜长征动力学,在利用脉冲激光淀积法外延生长氧化物薄膜中衬底温度是十分重要的工艺参数.衬底温度对成相和生长薄膜的取向都有影响.考虑到薄膜是首先在衬底表面成核、成相并生长.因此衬底材料晶格的影响是不容忽视的.观察到衬底材料对薄膜外延生长温度的影响.在适当的工艺条件下,利用低温三步法工艺制备得到有很强织构的外延薄膜.这突出表明界面层的相互作用对钙钛矿结构薄膜的取向有着相当大的影响. 关键词：     

The optical properties of thin erbium films

The effective dielectric constant, ε′₂, of very thin films of erbium on sodium chloride substrates was determined from measurements of normal incidence reflectance and transmittance in the visible spectrum. ε′₂ showed a maximum which moved to longer wavelengths as the film thickness increased. Electron microscopy revealed that the film islands grew flatter and more irregular with thickness. The shape factor of the islands, F, was calculated by a modified Maxwell-Garnett method and became smaller as the film thickness increased.     

The accuracies of photometric, polarimetric and ellipsometric methods for the optical constants of thin films

The inherent accuracies of various techniques for determining the optical constants of thin films have been assessed by computing the errors produced in n and k by known experimental errors in the optical functions being measured. The results are presented as arrays of error parallelograms in the n–k plane covering d/λ from 0.001 to 0.20 and θ from 5° to 85°.The largest regions of accuracy, in the form of annular quadrants, were obtained using the mixed photometric and polarimetric functions at small angles of incidence. Ellipsometry gives similar results at large angles of incidence but for photometry and for polarimetry the accurate regions were in the form of two lobes.The effects of errors in x and θ were also considered.     

Reversible,electical and optical switching on silver 3—phenyl—1—ureidonitrile complex thin films

We report on the reversible, electrical and optical switching on silver 3-phenyl-1-ureidonitrile complex thin films. The films can switch from a high impedance state to a low impedance state with an applied electric field at the threshold of 3.5×10⁷V/m. Furthermore, the films can be switched back to the original state by treating the samples at about 80℃. The optical recording is fulfilled using a semiconductor laser with a wavelength of 780 nm. Erasure can be accomplished by bulk heating or by the laser working with the power beneath the threshold. No loss of the organic was found in the experiments. This material may have a potential application in ultrahigh data density storage.     

纳米TiO_2薄膜的低温等离子体制备技术

以四氯化钛为源物质,氩气为载气,氧气为反应气体,利用低温等离子体增强化学气相沉积在硅基表面制备出了TiO2薄膜。使用场发射扫描电子显微镜、X射线衍射仪等检测分析表征TiO2薄膜的性能与性质,并探讨了工艺条件如基片材料、沉积时间和基片温度对薄膜性能的影响。结果表明:制备的薄膜表面光滑均匀,结构致密,最小晶粒尺寸约15 nm;薄膜的晶型主要依赖于沉积温度,低于300℃沉积的薄膜是无定形的,300℃之上沉积的薄膜是锐钛矿结构。     

Ge-Sb-Se硫系薄膜制备及光学特性研究

介绍了几种常见的硫系薄膜制备方法, 根据现有实验条件采用热蒸发法和磁控溅射法制备出Ge-Sb-Se三元体系硫系薄膜, 通过台阶仪测试薄膜的厚度和表面粗糙度, 计算出两种制备方法的成膜速率, 并通过X射线光电子能谱测试了两种制备方法所得薄膜与块体靶材组分的差别. 利用Z扫描技术和分光光度计测试了热蒸发法制备所得薄膜的三阶非线性性能和透过光谱, 计算出非线性折射率、非线性吸收系数和薄膜厚度等参数. 结果表明热蒸发法制备Ge-Sb-Se薄膜具有良好的物理结构和光学特性, 在集成光学器件方面很高的应用潜力.     

Further studies of the sensitivities attainable in using three optical functions to calculate n, k and thickness for thin films

All 56 combinations of three optical functions chosen from R_s, R_p, T_s, T_p, Φ_rs, Φ_rp, Φ_ts and Φ_tp have been investigated to discover their regions of sensitivity in n, k and d/λ coordinate space. When the arrays of error parallelepipeds were plotted, single quadrant patterns of high sensitivity were generated by 21 of these combinations, these being the ones containing one photometric and two polarimetric functions; the best combination was R_pΦ_rpΦ_tp which was viable at all angles of incidence and all thicknesses up to d/λ = 0.08. The remaining 35 combinations produced two-lobe patterns which were insensitive at small angles of incidence but improved as the angle of incidence increased and were best at 60°.     

磁记录硬盘介质研究进展

硬盘磁记录介质是磁性材料应用的一个重要方面,目前在信息存储领域占有重要的地位.文章概述了磁记录硬盘介质的发展过程以及研究和开发的状况,并对硬盘未来的发展前景作了分析.     

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.     

Hematite thin films: growth and characterization

We have grown hematite (α–Fe ₂ O ₃) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α–Fe ₂ O ₃. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.     

记录薄膜Te—In—Sb光学性质的研究

采用高频溅射方法制成Te-In-Sb系统的非晶态薄膜.系统的研究了不同组分薄膜的透射、反射谱,及其在结晶过程中的变化.用透射电镜研究了Te-In-Sb薄膜的结构和晶化过程.分析了组分对薄膜的吸收系数、介电常数、光学能隙等光学性质的影响.并由此综合评价了Te-In—Sb系统中比较适合作为光盘介质的组成.