Intercalation synthesis of cobalt silicide under a graphene layer

The silicon intercalation under single-layer graphene formed on the surface of an epitaxial Co(0001) film was investigated. The experiments were performed under conditions of ultra-high vacuum. The thickness of silicon films was varied within the range of up to 1 nm, and the temperature of their annealing was 500°C. The characterization of the samples was carried out in situ by the methods of low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and magnetic linear dichroism in photoemission of Co 3p electrons. New data were obtained on the evolution of the atomic and electronic structure, as well as on the magnetic properties of the system with an increase in the amount of intercalated silicon. It was shown that the intercalation under a graphene layer is accompanied by the synthesis of surface silicide Co₂Si and a solid solution of silicon in cobalt.     

Features of the structure and properties of β-FeSi<Subscript>2</Subscript> nanofilms and a β-FeSi<Subscript>2</Subscript>/Si interface

The electronic, geometric, and magnetic structure of nanofilms of the β phase of iron disilicide FeSi₂ with the (001), (100), and (010) surfaces have been simulated through density functional calculations. A substantial reconstruction of the (001) surface terminated with silicon atoms has been observed, which was accompanied by an increase in the surface symmetry and appearance of “squares” of silicon atoms. Analysis of the electron density of states (DOS) and spin DOS projected on the contributions of layers of atoms (LSDOS) indicates that all plates have metallic properties. The main contribution near the Fermi level comes from the surface iron layers and it decreases rapidly with an increase in the distance from the surface of the plate. Analysis of the calculated effective magnetic moments of atoms shows that the surface layers in the plates have a significant magnetic moment, in particular, iron layers on the (001) surface (1.89 μ_B/atom). The moments of atoms decrease rapidly with an increase in their distance from the surface. The electron and geometric regions of a (001)Si/FeSi₂ interface have been studied. Analysis of the LSDOS shows that the surface conducting state mainly determined by the contribution from the near-surface silicide layers is implemented in this region. The possibility of the formation of the perfect and sharp Si/FeSi₂ interface has been demonstrated.     

Charge states of cobalt ions in nanostructured lithium cobaltite: X-ray absorption and photoelectron spectra

The charge states of ions in nanostructured lithium cobaltite prepared by severe plastic deformation under pressure have been determined using X-ray absorption spectroscopy and photoelectron spectroscopy, as well as calculations of the atomic multiplets with allowance for the charge transfer. It has been found that small deformations (pressures up to 5 GPa and angles of anvil rotation up to 30°) lead to the generation of lithium vacancies in the bulk of the nanostructured material and the formation of the Li₂O phase on the surface. The charge compensation occurs at the expense of holes in oxygen 2p states; the electronic configuration of cobalt ions is 3d ⁶ L, where L is a hole in oxygen 2p states. It has been shown that nanostructured lithium cobaltite belongs to the class of insulators with a negative charge transfer energy. An increase in the degree of deformation of lithium cobaltite (at a pressure up to 8 GPa) leads to the formation of Co²⁺ ions (with the electronic configuration 3d ⁷).     

Ab initio study of the (2 × 2) phase of barium on graphene

We present a first-principles density functional theory study on the structural, electronic and dynamical properties of a novel barium doped graphene phase. Low energy electron diffraction of barium doped graphene presents clear evidence of (2 × 2) spots induced by barium adatoms with BaC₈ stoichiometry. First principles calculations reveals that the phase is thermodynamically stable but unstable to segregation towards the competitive BaC₆ monolayer phase. The calculation of phonon spectrum confirms the dynamical stability of the BaC₈ phase indicating its metastability, probably stabilized by doping and strain conditions due to the substrate. Barium induces a relevant doping of the graphene π states and new barium-derived hole Fermi surface at the M-point of the (2 × 2) Brillouin zone. In view of possible superconducting phase induced by foreign dopants in graphene, we studied the electron–phonon coupling of this novel (2 × 2) obtaining λ = 0.26, which excludes the stabilization of a superconducting phase.     

Electronic structure of graphene/Y2C heterostructure and related doping effect

Until now, many attempts have been made to dope graphene in various ways, but each method turned out to have pros and cons. In this study, to overcome the limitations of doping methods, yttrium hypocarbide (Y₂C) is investigated as one prospective material to dope graphene, using density functional theory calculations. In monolayer Y₂C, the anionic electrons localized away from Y atomic layers are confirmed to contribute to occupied states near the Fermi level. Next, we investigate the electronic structure of graphene in heterojunction with Y₂C. Anionic electrons of Y₂C occupy the empty states of graphene in graphene/Y₂C heterostructure, which makes the Dirac cone of graphene located at about 1.7 eV below the Fermi level. Such charge transfer of anionic electrons to graphene and the flatness of electric cloud of anionic electrons leads to evenly n-doped graphene in graphene/Y₂C heterostructure. This suggests that Y₂C is a good candidate to dope graphene.     

Formation and magnetic properties of the silicon-cobalt interface

Formation of the Si/Co interface and its magnetic properties have been studied by high-resolution photoelectron spectroscopy with synchrotron radiation. The experiments have been performed in situ in superhigh vacuum (5 × 10^?10 Torr) with coating thicknesses up to 2 nm. It has been found that, in the initial stage of silicon deposition on the surface of polycrystalline cobalt maintained at room temperature, ultrathin layers of the Co₃Si, Co₂Si, CoSi, and CoSi₂ silicides are formed. The three last phases are nonmagnetic, and their formation gives rise to fast decay of magnetic linear dichroism in photoemission of Co 3p electrons. At deposition doses in excess of ～0.4 nm Si, a film of amorphous silicon grows on the sample surface. It has been established that the Si/Co interphase boundary is stable at temperatures up to ～250°C and that further heating of the sample brings about escape of amorphous silicon from the sample surface and initiates processes involving silicide formation.     

Formation of the Co/Si(110) interface: Phase composition and magnetic properties

The formation of the Co/Si(110)16 × 2 interface and its magnetic properties are studied by high-energy-resolution photoelectron spectroscopy using synchrotron radiation and magnetic linear dichroism in the photoemission of core electrons. It is shown that a cobalt coating less than 7 Å thick deposited on the silicon surface at room temperature results in the formation of an ultrathin (1.7 Å) interfacial cobalt silicide layer and a layer of silicon-cobalt solid solution. The ferromagnetic ordering of the interface is observed at an evaporation dose corresponding to 6–7 Å in which case a cobalt metal film begins to grow on the solid solution layer. During 300°C-annealing of the sample covered by a nanometer-thick cobalt layer, the metal film gradually disappears and four silicide phases arise: metastable ferromagnetic silicide Co₃Si and three stable nonmagnetic silicides (Co₂Si, CoSi, and CoSi₂).     

On the fermi velocity and static conductivity of epitaxial graphene

The models of the energy density of states of a metallic or semiconductor substrate, which does not further lead to divergences, have been proposed to calculate the characteristics of epitaxial graphene. The Fermi velocity of epitaxial graphene formed on a metal has been shown to be greater than that in free-standing graphene irrespective of the position of the Fermi level. On the contrary, the Fermi velocity of graphene formed on a semiconductor is lower so that the lower is the Fermi velocity, the closer is the Fermi level to the center of the band gap of the semiconductor. The zero-temperature static conductivity σ of epitaxial graphene has been calculated according to the Kubo-Greenwood formula. The quantity σ_m of undoped graphene on metal has been shown to decrease with an increase in the deviation of the Dirac point ?_D (which coincides with the Fermi level of the system) from the center of the conduction band of the substrate. In the case of the semiconductor substrate, the static conductivity σ_sc turns out to be nonzero and amounts to σ_sc = 2e ²/π?-only under the condition ?_F =?′_D, where ?′_D is the Dirac-point energy renormalized by the interaction with the substrate.     

Anisotropic Dirac cones in monoatomic hexagonal lattices: a DFT study

In the last few years, the fascinating properties of graphene have been thoroughly investigated. The existence of Dirac cones is the most important characteristic of the electronic band-structure of graphene. In this theoretical paper, hexagonal monolayers of silicon (h-Si) and germanium (h-Ge) are examined using density functional theory, within the generalized gradient approximation. Our numerical results indicate that both h-Si and h-Ge are chemically stable. The lattice parameters, electronic dispersion relations and densities of states for these systems are reported. The electronic dispersion relations display Dirac cones with the symmetry of an equilateral triangle (the group D₃) in the vicinity of the K-points. Hence, the Fermi velocity depends on the wave vector direction around K-points. Fermi velocities for holes and electrons are significantly different. The maximum and minimum Fermi velocities are also reported.     

Surface spin-polarized currents generated in topological insulators by circularly polarized synchrotron radiation and their photoelectron spectroscopy indication

A new method for generating spin-polarized currents in topological insulators has been proposed and investigated. The method is associated with the spin-dependent asymmetry of the generation of holes at the Fermi level for branches of topological surface states with the opposite spin orientation under the circularly polarized synchrotron radiation. The result of the generation of holes is the formation of compensating spin-polarized currents, the value of which is determined by the concentration of the generated holes and depends on the specific features of the electronic and spin structures of the system. The indicator of the formed spin-polarized current can be a shift of the Fermi edge in the photoelectron spectra upon photoexcitation by synchrotron radiation with the opposite circular polarization. The topological insulators with different stoichiometric compositions (Bi_1.5Sb_0.5Te_1.8Se_1.2 and PbBi₂Se₂Te₂) have been investigated. It has been found that there is a correlation in the shifts and generated spin-polarized currents with the specific features of the electronic spin structure. Investigations of the graphene/Pt(111) system have demonstrated the possibility of using this method for other systems with a spin-polarized electronic structure.     

新型超导材料MgCNi3的电子结构与超导电性研究

用MS-Xα方法研究了非氧化物超导材料MgCNi₃的电子结构. 研究结果显示, 态密度分布曲线的主峰靠近Fermi面, 主要来自于Ni的d电子的贡献. 用T(T=Co，Mn，Cu)替代MgCNi₃中的部分Ni形成化合物MgCNi₂T，替代使Ni的价电子数减小, 价态发生变化, Fermi面处态密度N(E_F)减小. 计算结果表明：无论是电子掺杂（Cu）还是空穴掺杂（Co，Mn），MgCNi₃的超导电 关键词： 电子结构 态密度 超导电性     

X-ray diffraction and photoelectron spectroscopy study of swift heavy ion irradiated Mn/p-Si structure

The electronic structure and interfacial chemistry of thin manganese films on p-Si (1 0 0) have been studied by photoelectron spectroscopy measurements using synchrotron radiation of 134 eV and from X-ray diffraction data. The Mn/p-Si structures have been irradiated from swift heavy ions (∼100 MeV) of Fe⁷⁺ with a fluence of 1 × 10¹⁴ ions/cm². Evolution of valence band spectrum with a sharp Fermi edge has been obtained. The observed Mn 3d peak has been related to the bonding of Mn 3d-Si 3sp states. Mn 3p (46.4 eV), Mn 3s (81.4 eV) and Si 2p (99.5 eV) core levels have also been observed which show a binding energy shift towards lower side as compared to their corresponding elemental values. From the photoelectron spectroscopic and X-ray diffraction results, Mn₅Si₃ metallic phase of manganese silicide has been found. The silicide phase has been found to grow on the irradiation.     

Positron annihilation study of the influence of doping on the 3<Emphasis Type="Italic">d</Emphasis> electron states in the Ni<Subscript>3</Subscript>Al intermetallic compound

The 3d electron states in Ni₃Al single crystals doped with Fe, Co, and Nb have been investigated using angular correlation of annihilation radiation (ACAR). The ACAR spectra contain information on the momentum distribution of valence electrons and strongly bound 3d electrons of the intermetallic compound. It has been established that the positrons in the Ni₃Al crystals predominantly annihilate in the nickel sublattice from delocalized states. The doping of the compound by the third element leads to a variation in the momentum distribution of Ni 3d electrons due to the change in the character of interatomic bonds. An analysis of the momentum distribution has demonstrated that the niobium atoms increase the covalent component of the chemical bond as compared to the binary compound due to the d _Nb-d _Ni hybridization. The doping with cobalt atoms also enhances the tendency toward the formation of the covalent bond. At the same time, iron atoms have a weak effect on the electronic structure of the intermetallic compound.     

锂改性点缺陷石墨烯储氢性能的第一性原理研究

本研究采用基于密度泛函理论的第一性原理方法计算了两种石墨烯点缺陷处原子的分波态密度(PDOS),能带结构和差分电荷密度等,研究了锂掺杂对两种本征石墨烯缺陷C-Bridge和C7557电子结构的改性,以及对其储氢能力的影响.结果表明Li原子能够稳定的掺杂且不易形成团簇,并且Li原子掺杂石墨烯能够对石墨烯能带中的狄拉克锥和费米面起到调控作用,增强了缺陷石墨烯的电子活性.本征缺陷石墨烯的储氢能力较弱,缺陷石墨烯的储氢能力可以通过Li掺杂来改善.     

Temperature and concentration dependences of the electronic etructure of copper oxides in the generalized tight binding method

The electronic structure of p-type doped HTSC cuprates is calculated by explicitly taking into account strong electron correlations. The smooth evolution of the electronic structure from undoped antiferro-magnetic to optimally and heavily doped paramagnetic compositions is traced. For a low doping level, in-gap impurity-type states are obtained, at which the Fermi level is pinned in the low-doping region. These states are separated by a pseudogap from the valence band. The Fermi surfaces calculated for the paramagnetic phase for various concentrations of holes are in good agreement with the results of ARPES experiments and indicate a gradual change in the Fermi surface from the hole type to the electron type.     

Structural phase changes in a titanium-silicon system modified by high-current electron beams and compression plasma flows

Structural phase changes in a titanium-silicon system treated by low-energy high-current electron beams (HCEBs) and compression plasma flows (CPFs) with the duration 100 μs and the energy density 12–15 J/cm² are studied. Scanning electron microscopy, X-ray diffraction and electron microprobe analysis are used in this work. The formation of a titanium-doped silicon layer 10–25 μm thick, titanium silicides (TiSi₂ under HCEBs and Ti₅Si₃ under CPF treatment), silicon dendrites, and needle-like eutectics (typical size of precipitates is about 50 nm) is revealed. It is shown via the results of numerical simulation that the thickness of the metal-doped layer is mainly controlled by the power density value and the surface nonuniformity of the heat flow over the target surface. The thermodynamic regularities of phase formation are discussed, taking into account heat transfer between the silicide nuclei and solid silicon.     

High-temperature superconductors as heterostructures

The wave-function envelope method is used to describe the electronic states of the cuprate high-T _c superconductors (HTSCs). In this method the 2D electronic states of the CuO₂ layers of a unit cell play the role of quantum wells, while the 2D states of the reservoir play the role of quantum barriers. Because of the different anisotropy of the 2D effective masses of the wells and barriers, some states on the Fermi surface (line) belong to CuO₂ layers and some states belong to the reservoir layers. This behavior of the electronic states explains characteristic features of HTSCs, such as the existence of regions on the Fermi surface with strongly different relaxation times, the weak suppression of d-type superconducting pairing by nonmagnetic scattering, and the coincidence of the angular dependence of the superconducting order parameter and the angular dependence of the electronic density of states (forward scattering predominating). The change in the signs of the components of the effective masses along the Fermi surface can result in the formation of hole pairs (biholes) or electron pairs (bielectrons) on account of the Coulomb interaction in the case of a negative reduced mass of the pairs. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 3, 211–216 (10 August 1998)     

Electronic structures of the LaBO3 (B = Co, Fe, Al) perovskite oxides related to their catalysis

The discrete-variational (DV) X α molecular orbital method has been applied to investigate the bulk and surface electronic structures of perovskite oxides such as LaCoO₃, LaFeO₃ and LaAlO₃. The calculated XPS spectra for these oxides are in good agreement with the experimental ones and only the LaCoO₂ exhibited a rather high electron density of states near the Fermi level (E_F). The catalytic behavior of these oxides is discussed on the basis of their electronic structures; the marked catalysis by LaCoO₃ is associated with electron occupation of crystal field d states near E_F and with the buildup of surface charge so as to enhance the electron transfer between a surface cation and an interacting molecule.     

Influence of the state of the bulk of the sample on the formation and thermal stability of the surface silicide on W(100)

The formation and destruction of the surface silicide on W(100) after cleaning of the sample surface and bulk in various regimes is studied by high-resolution Auger electron spectroscopy. It is shown that the cleanness of the bulk has practically no influence on the laws governing the formation of the surface silicide when Si atoms are adsorbed on a heated W surface and that almost up to completion of its formation all the silicon atoms impinging on the surface, from the very first, remain on it and are incorporated into the surface silicide. The destruction of the surface silicide depends in a definite manner on the state of the bulk, and at T=1400 K it is apparently limited in the early stages by the passage of Si atoms from the surface to the subsurface layer and in subsequent stages by the diffusion of silicon within the substrate. The bulk silicon density that limits the destruction of the surface silicide is estimated. Zh. Tekh. Fiz. 67, 137–140 (July 1997)     

Microscopic theory of a strongly correlated two-dimensional electron gas

The rearrangement of the Fermi surface in a diluted two-dimensional electron gas beyond the topological quantum critical point has been examined within an approach based on the Landau theory of Fermi liquid and a nonperturbative functional method. The possibility of a transition of the first order in the coupling constant at zero temperature between the states with a three-sheet Fermi surface and a transition of the first order in temperature between these states at a fixed coupling constant has been shown. It has also been shown that a topological crossover, which is associated with the joining of two sheets of the Fermi surface and is characterized by the maxima of the density of states N(T) and ratio C(T)/T of the specific heat to the temperature, occurs at a very low temperature T _⋄ determined by the structure of a state with the three-sheet Fermi surface. A momentum region where the distribution n(p, T) depends slightly on the temperature, which is manifested in the maximum of the specific heat C(T) near T _*, appears through a crossover at temperatures T ∼ T _* > T _⋄. It has been shown that the flattening of the single-particle spectrum of the strongly correlated two-dimensional electron gas results in the crossover from the Fermi liquid behavior to a non-Fermi liquid one with the density of states N(T) ∝ T ^−α with the exponent α }~ 2/3.