Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Silicon single crystals are grown by the Czochralski method with various growing conditions. Effective segregation coefficient of boron is found to depend on the magnetic field in cusp-magnetic Cz method. Effects of zero-Gauss plane (ZGP), ZGP shape and magnetic intensity (MI) on the dopant concentration and its distribution in the crystal are experimentally investigated. The shape of ZGP is not only flat but also parabolic due to the magnetic ratio (MR), which is the ratio of the lower to upper electric-current densities in the configurations of the cusp-magnetic field. Equilibrium distribution coefficient of boron calculated by BPS model is 0.698. With the crystal rotation (w) of 16 rpm and the crucible rotation of ?0.5 rpm, the effective distribution coefficient (k_e) is 0.728 in zero magnetic intensity and increases up to 0.8093 in the parabolic ZGP shape. Although the magnetic strength near the crystal–melt interface decreases with increasing MR, it increases in the bulk melt, and hence k_e increases. Flow stability in the bulk melt influences k_e. At the magnetic field and growing conditions, k_e increases with increasing initial charge size of the silicon melt. There is no significant influence of ZGP on the radial distribution of the boron concentration. Simulation results of melt flow in the presence of a parabolic ZGP are outlined, and the segregation results in the experiments are compared with published experimental data.     

The influence of magnetic effects on the mechanical properties and real structure of nonmagnetic crystals

This review for the first time systematizes the results of our investigations into the influence of magnetic effects on the mechanical properties and the real structure of nonmagnetic crystals. It is found that the preliminary magnetic treatment of alkali halide crystals leads to a decrease in their solubility and a change in the microhardness and yield stress. The magnetic field strongly affects the macroplasticity of LiF, NaCl, and PbS crystals under deformation in a magnetic field. This is accompanied by a change in the shape of stress-strain curves, a shortening of deformation stages, a change in the hardening coefficients, and a decrease in the yield stress. It is revealed that the magnetic effects exhibit threshold behavior. The yield stress is measured as a function of the magnetic induction and the strain rate. It is established that the magnetic and electric fields have a joint effect on the kinetics of plastic deformation. A kinematic model of the macroscopic magnetoplastic effect is proposed.     

Electromagnetic emission under uniaxial compression of ice: II. Analysis of the relationship between an electromagnetic signal and the dynamics of charged dislocation pile-ups

The nature of the electrical activity of mesoscopic defects in I_h ice and the relationship of this activity with the kinetics of plastic deformation and fracture is discussed. The theoretical time dependences of the shear caused by active dislocation pile-ups are compared with the shapes of actual electromagnetic signals generated in different stages of the plastic deformation of I_h ice. Good agreement with the model of free expansion of a conservative dislocation pile-up and the model of nucleation and propagation of a slip band is established.     

Serrated plastic deformation in LiF single crystals at high temperatures

The serrated plastic flow in LiF single crystals has been studied in the mode of active deformation at high temperatures (T = 573–1093 K). The parameters of the jumps in the deforming stresses (normalized amplitude and relaxation time of stress oscillations) were determined at the stage of strain softening under conditions of uniaxial compression and tension. It was shown that the jump parameters are essentially dependent on the type of the stressed state and the deformation temperature. The activation energy of serrated deformation in shear bands was established to be close to the migration energy for cation vacancies.     

Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one.     

Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72‐hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In-situ HVEM Observations of Dislocation Processes during High Temperature Deformation of Silicon Crystals

The characteristics in the plastic deformation of silicon crystals are first reviewed. Such characteristics have been interpreted quantitatively on the basis of some models on the velocity and the multiplication of dislocations during deformation. The results of the in-situ observations of silicon crystals deformed at elevated temperatures in a HVEM are presented. The slowness and the smoothness in the dislocation motion, the dynamic pile-up as a general mode of the collective motion of dislocations, the formation processes of multiplication centers of dislocations observed during the deformation all support the validity of the models adopted. Dislocation dipoles and Lomer-Cottrell sessiles are observed not to act as strong obstacles which play important roles in the work hardening of the crystals.     

IR-spannungsoptische Ermittlung züchtungsbedingter Eigenspannungen in Silizium

The growth conditions and the resultant defect structure are the cause of residual stresses in silicon single crystals. The field of residual stress is nearly axial symmetrically; tensile stresses are in the centre and compressive stresses are at the periphery. The field of residual stress adapts itself to crystal symmetry by plastic deformation during the growth or annealing processes. The tangential compressive stresses at the periphery are 25 kp/cm² for Czochralski-grown crystals (diameter 36 mm, etch-pit density 5 · 10³ cm⁻²) and about 70 kp/cm² for crystals grown by the floating zone technique (diameter 28 mm, etch-pit density 3 · 10⁴ cm⁻²). Dislocation free crystals are almost free of residual stresses.     

Yield stress and plasticity of nanostructured titanium of different purity at 300, 77, and 4.2 K

Specimens of nanostructured titanium with different dopant concentrations were prepared by intense plastic deformation via equal-channel-angular pressing. The low-temperature mechanical characteristics of the specimens subjected to active deformation under uniaxial tension and compression were studied. The yield stress and the limit uniform deformation of nanostructured and coarse-grained polycrystalline titanium were compared.     

Structural and magnetic properties of Ni2MnIn Heusler thin films grown on modulation-doped InAs heterostructures with metamorphic buffer

This paper reports on the morphological, structural, magnetic, and magneto-optic properties of Ni₂MnIn Heusler films grown on InAs-high electron-mobility transistor structures (HEMT) with metamorphic buffers for spintronic applications. Similar to our previous results on the Ni₂MnIn/InAs (001) system, the Heusler layer is found to have a (110) orientation relative to the (001) InAs-HEMT surface. We observe almost equal spin-polarizations for Heusler films on (001) InAs-HEMT as well as on (001) InAs. In addition, we find further support for interfacial intermixing previously reported for the Ni₂MnIn/InAs (001) system. On the other hand, the Heusler/InAs-HEMT system shows distinct morphologic, structural, and magnetic properties as compared to the Ni₂MnIn/InAs (001) system. In particular, more rapid and complex plastic deformation effects resulting in a high surface density of pin-holes in the Heusler films are found. We report on complex mutual deformation effects between the Heusler films and the underlying InAs-HEMT structure. Furthermore, a hysteresis loop squareness close to 1 for a 50 nm Heusler film on InAs-HEMT is observed. We tentatively associate these phenomena with the higher mismatch strain of the Ni₂MnIn/InAs-HEMT system compared to Ni₂MnIn films grown on (001) InAs.     

Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computation

Control of melt flow during Czochralski (CZ) crystal growth by application of magnetic fields is an important technique for large-diameter (>300 mm) silicon single crystals. Melt convection under magnetic fields is an interesting problem for electromagnetic-hydrodynamics. This paper reviews the effects of a vertical magnetic field and a cusp-shaped magnetic field on melt flow during CZ crystal growth. Melt flow in vertical magnetic fields or cusp-shaped magnetic fields was investigated by the direct observation method based on X-ray radiography and by numerical simulation. The first part of this review shows the result of direct observation of molten silicon flow under magnetic fields. It also compares the results of experimental and numerical simulation. The second part shows the details of the numerical simulation of the behavior of molten silicon in magnetic fields.     

Competition of time and spatial scales in polymer glassy dynamics: Rejuvenation and confinement effects

We use molecular-dynamics (MD) simulations and an original lateral contact experiment to explore the influence of mechanical history on polymer mechanical behavior and segmental mobility. Two typical glassy polymers are considered: bulk acrylate (experiments) and atactic polystyrene (aPS) in a bulk and in thin films (simulations). Stress-strain behavior has been investigated both experimentally for sheared, 50 μm thick, acrylate films and by MD simulations of an aPS in a bulk for two different strain rates in a closed extension-recompression loops. Cyclic shear strains applied in the plastic regime were found experimentally to induce a progressive transition of the mechanical response of the polymer glass toward a steady state which is characterized by a strong reduction of the apparent - non linear - shear modulus. The dynamics of the polymer glass in this yielded state was subsequently analyzed from a measurement of the time dependent linear viscoelastic properties at various imposed frequencies. Immediately after the cyclic plastic deformation, mechanical “rejuvenation” of the polymer is evidenced by a drop in the storage modulus and an increase in the loss modulus, as compared to the initial values recorded before plastic deformation. A progressive recovery of the viscoelastic properties is also measured as a function of time as a result of the enhanced aging rate of the system. This experimentally observed mechanical rejuvenation of polymer has been for the first time connected to the drastic increase in the simulated segmental mobility. A simulated distribution of relaxation times shows a shift to shorter times of the α and β relaxation processes which is consistent with the observed experimental changes in the viscoelastic modulus after rejuvenation. Finally, we present our first findings on the thickness- and substrate-dependence of the simulated glass transition temperature for thin aPS films. We observe the decrease of the glass transition temperature with film thickness, but for extremely thin (less than 2 nm) films.     

An X-ray investigation of growth and deformation faults in a vapour grown 2H SiC crystal

Single crystals of 2H SiC grown by hydrogen reduction of methyltrichlorosilane at 1400°C frequently contain a high concentration of random stacking faults in their hexagonal closepacked | AB | AB | … structure. This given rise to diffuse streaks along reciprocal lattice rows parallel to the c¹ axis for h ? k ≠ 0 mod 3. To investigate the nature of stacking faults in these crystals, the intensity distribution along the 10. l reciprocal lattice row of a 2H SiC crystal was recorded on a 4-circle computer-controlled single crystal diffractometer. The halfwidths of 10. l reflections with l even and l odd were found to be 0.36 and 0.24 reciprocal units respectively. It is observed (i) that the 10. l reflections with l even are highly broadened and (ii) that the halfwidths of l even and l odd reflections are in the ratio of 3 : 2. This suggests that the stacking faults present are predominantly growth and deformation faults. Since the fault concentration is very high, exact theoretical expressions for the halfwidths of 10. l reflections were used to calculate the growth and deformation fault probabilities (α and β) from the observed half widths, without neglecting the second and higher order terms in α and β. It is found that α = 0.11 and β = 0.20. The deformation fault probability (β) is surprisingly high for hard and brittle material like SiC which does not undergo plastic deformation easily. It is suggested that several deformation fault configurations have resulted from a clustering of growth faults.     

Theoretical Study of Intragranular Heterogeneity of Deformation and Crystal Rotation

The paper deals with the problem of the intragranular heterogeneous deformation. The grains of a deformed polycrystal are divided in general into subgrains (or deformation zones). In each subgrain a different set of slip systems and consequently a different crystal rotation may occur. We have examined theoretically both the homogeneous and the heterogeneous deformation in tension of a grain using the model of the plastic inclusion(s) in an elastic matrix. The crystal structure and orientation as well as the interactions between slip systems have been taken into account. For both situations (homogeneous and heterogeneous) we have compared resulting deformation energies, active slip systems and crystal rotations. We conclude that for some configurations of heterogeneity it is possible to minimize the total deformation energy.     

Magnetoplastic effect: Basic properties and physical mechanisms

This paper presents a review of the main results of investigations into the magnetoplastic effect, which manifests itself in motion of dislocations in crystals exposed to magnetic fields. The dependences of the mean free path of dislocations on the induction and direction of the magnetic field, the magnetic treatment time, the temperature, and the type and concentration of impurities are studied for NaCl, LiF, CsI, Zn, Al, and InSb crystals. The threshold magnetic field B _c below which the effect is absent, the saturation field B₀ above which the mean free paths of dislocations remain constant with an increase in the magnetic induction B, and the critical frequency v _c of rotation of a sample in the magnetic field above which the effect disappears are examined. The quantities B _c , B₀, and v _c are investigated as functions of the basic physical parameters. It is found that the magnetoplastic effect is highly sensitive to X-ray radiation at low doses and to simultaneous action of an electric field or mechanical loading. The hardening of NaCl(Pb) crystals in the magnetic field is revealed. The theoretical interpretation is proposed for all the findings and dependences observed.     

I–V characteristic and magnetoresistance of homogeneous materials

A formula providing the current across a slab of homogeneous conducting material under bias and subjected to a perpendicular magnetic field, is presented in both the high and low temperature regime. The current is expressed in terms of the applied voltage, V, the magnetic field, B, temperature, T, mobility and resistivity of the material, μ and ρ_s at zero magnetic field and at temperature T. Furthermore, the sample dimensions enter the expression for the current. The formula in question enables obtaining the magnetoresistance of the slab in terms of the above parameters in the cases under constant bias and under constant current. Several experimental results are compared with theoretical predictions, e.g., switch from positive to negative magnetoresistance. Furthermore, it is shown that there exists a critical value for a certain dimensionless collective parameter, above which for small magnetic fields the magnetoresistance becomes negative, while for values below is positive. The quasi-linear magnetoresistance, observed in experiments at high magnetic fields, is also adequately reproduced.     

Climb mechanisms and critical temperature in off-stoichiometric V3Si

A dislocation climb model is proposed for both vanadium and silicon rich V₃Si single crystals. Just the type of constitutional point defects is needed solely which dominates in the sample under consideration. The climb mechanism involves a conversion of one defect type into another and so may be responsible for the changes in critical temperature of the superconductor as observed after plastic deformation at elevated temperatures.     

Crystal electric field in RAgSb2 (R = Ho, Er, Tm) intermetallic compounds

The magnetic scattering spectra of RAgSb₂ (R = Ho, Er, Tm) intermetallic compounds are measured and their crystal electric field parameters are determined using inelastic neutron scattering. It is revealed that the ground state is a nonmagnetic singlet for the HoAgSb₂ compound, a Kramers doublet with a strongly anisotropic g factor for the ErAgSb₂ compound, and a quasi-doublet (random doublet) characterized by an extremely anisotropic g factor for the TmAgSb₂ compound. The exchange interaction is estimated in the molecular field approximation. The magnetic properties of the RAgSb₂ compounds are analyzed in terms of the energy level schemes and eigenfunctions determined in this study. The calculated anisotropic magnetic susceptibilities for all compounds are in good agreement with the experimental data obtained for single crystals.     

Investigation of hopping transport in n-a-Si:H/c-Si solar cells with pulsed electrically detected magnetic resonance

Hopping transport through heterostructure solar cells based on B-doped crystalline silicon wafers with highly P-doped hydrogenated amorphous silicon emitters with different thicknesses is investigated at T = 10 K with pulsed electrically detected magnetic resonance. The measurements show that transport is dominated by conduction band tail states (g ≈ 2.0046) with a distribution of their mutual coupling strength. The signal intensity correlates to the sample thickness and the g-factors do not exhibit an anisotropy which suggests that transport is still dominated by bulk properties of amorphous silicon. In addition, two broad P-donor hyperfine satellites can be detected. Influences of interface defects such as P_b-like states known from silicon dioxide interfaces are either suppressed by the high Fermi energy at the interface or not present.     

Fabrication and optical characterization of p-type single macro-porous silicon for detection of nano-sized functionalized superparamagnetic beads

Porous silicon (PSi) shows tremendous potential for applications including optical devices and biochemical biosensors due to the large surface area and convenience of surface functionalization of pores. Recently, variations of the Fabry–Pérot fringes shift with the refractive index of the material filling the pores of PSi have been used for real time monitoring of biorecognition processes, where the optical shift is determined by the magnitude of the optical thickness (2nL) by fast Fourier transform (FFT). The development of biosensing systems using functionalized superparamagnetic beads (SPBs) or ‘magnetic labels’ is expected to enable a fast, one-step immunoassay protocol. However, magnetic labels are difficult to infiltrate into small nanopores in silicon due to blocking effects such as surface tension, wettability, and stomatal morphology. Here, we investigated the optimal fabrication parameters of PSi with large pores into which magnetic labels easily infiltrate, and confirmed the penetration of SPBs by the changes in the optical thickness 2nL by reflectivity measurements. Finally, we show the potential for real-time point of care diagnostic system by utilizing our method.