Structural and elastic properties of Zr<Subscript>2</Subscript>AlX and Ti<Subscript>2</Subscript>AlX (X = C and N) under pressure effect

Using first-principles density functional calculations, the effect of high pressures, up to 20 GPa, on the structural and elastic properties of Zr₂AlX and Ti₂AlX, with X = C and N, were studied by means of the pseudo-potential plane-waves method. Calculations were performed within the local density approximation to the exchange-correlation approximation energy. The lattice constants and the internal parameters are in agreement with the available results. The elastic constants and their pressure dependence are calculated using the static finite strain technique. We derived the bulk and shear moduli, Young's moduli and Poisson's ratio for ideal polycrystalline Zr₂AlX and Ti₂AlX aggregates. We estimated the Debye temperature of Zr₂AlX and Ti₂AlX from the average sound velocity. This is the first quantitative theoretical prediction of the elastic properties of Zr₂AlC, Zr₂AlN and Ti₂AlN compounds, and it still awaits experimental confirmation.     

DFT study of BaTiO<Subscript>3</Subscript> (001) surface with O and O<Subscript>2</Subscript> adsorption

Progress of scanning tunneling microscopy (STM) allowed to handle various molecules adsorbed on a given surface. New concepts emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale is thus particularly invaluable. In this work, within the framework of density functional theory (DFT), we present an electronic and structural ab initio study of a BaTiO₃ (001) surface (perovskite structure) in its paraelectric phase. As far as we know the atomic and molecular adsorption of oxygen at surface is then analyzed for the first time in the literature. Relaxation is taken into account for several layers. Its analysis for a depth of at least four layers enables us to conclude that a reasonable approximation for a BaTiO₃ (001) surface is provided with a slab made up of nine plans. The relative stability of two possible terminations is considered. By using a kinetic energy cut off of 400 eV, we found that a surface with BaO termination is more stable than with TiO₂ termination. Consequently, a surface with BaO termination was chosen to adsorb either O atom or O₂ molecule and the corresponding calculations were performed with a coverage 1 on a (1×1) cell. A series of cases with O₂ molecule adsorbed in various geometrical configurations are also analyzed. For O₂, the most favorable adsorption is obtained when the molecule is placed horizontally, with its axis, directed along the Ba-Ba axis and with its centre of gravity located above a Ba atom. The corresponding value of the adsorption energy is -9.70 eV per molecule (-4.85 eV per O atom). The molecule is then rather extended since the O–O distance measures 1.829 ?. By comparison, the adsorption energy of an O atom directly located above a Ba atom is only -3.50 eV. Therefore we are allowed to conclude that the O–O interaction stabilizes atomic adsorption. Also the local densities of states (LDOS) corresponding to various situations are discussed in the present paper. Up to now, we are not aware of experimental data to be compared to our calculated results.     

An all-electron LCGTO study of square and hexagonal plutonium monolayers

The linear combinations of Gaussian type orbitals fitting function (LCGTO-FF) method is used to study the electronic and geometrical properties of plutonium monolayers with square and hexagonal symmetry. The effects of several common approximations are examined: (1) scalar-relativity vs. full-relativity (i.e., with spin-orbit coupling included); (2) paramagnetic vs. spin-polarized; and (3) local-density approximation (LDA) vs. generalized- gradient approximation (GGA). The results indicate that spin-orbit coupling has a much stronger effect on the monolayer properties compared to the effects of spin-polarization. In general, the GGA is found to predict a larger lattice constant and a smaller cohesive energy compared to LDA predictions. We also find a significant compression of the monolayers compared to the bulk, contradicting the only other published result on a Pu monolayer. The current result supports the existence of a δ-like surface on α-Pu. Received 17 October 2001 Published online 6 June 2002     

First-principles investigation of structural,electronic and optical properties of IVA group spinel nitrides

The Si₃N₄ and Ge₃N₄ are important structural ceramics with many applications because of their attractive high temperature and oxidation resistant properties. The high-pressure and high-temperature spinel phases of these two materials were noticed to have wide, direct electronic band gaps. Other single and double spinel nitrides formed from IVA and IVB group elements have also attracted much attention. Present research focuses on selecting a special substance with promising optical properties and stability besides the attractive electronic properties. The formation energies of spinel nitrides are calculated and stabilities of a group of spinel nitrides are discussed, the structural and electronic properties of them are investigated in detail. By random phase approximation (RPA), the optical properties of spinel nitrides are researched. We obtain that γ-SiGe₂N₄ has some promising properties with potential technological applications from various aspects. The band transitions which contribute most to the peak of ε₂ have been identified. An assumption is proposed to raise the peak of ε₂.     

Band structure of tetragonal BaTiO <Emphasis Type="Bold">3</Emphasis>

The electronic structure, total density of states DOS and electronic density in ferroelectric tetragonal crystal BaTiO₃ are studied using WIEN2k package. This employs the full potential-linearized augmented plan wave FP-LAPW method in the framework of the density functional theory DFT with the generalized gradient approximation (GGA). The results show an indirect band gap of 2.30 eV at the Γ point in the Brillouin zone. The calculated band structure and density of states of BaTiO₃ agree with the previous experimental and theoretical results, as do the charge distribution and the prediction of the nature of the chemical bonding. Received 11 December 2002 / Received in final form 3 February 2003 Published online 1st April 2003 RID="a" ID="a"e-mail: salehihamid@yahoo.com     

Ab initio study of structural,electronic and dynamical properties of MgAuSn

The structural and electronic properties of MgAuSn in the cubic AlLiSi structure have been studied, using density functional theory within the local density approximation. The calculated lattice constant for MgAuSn is found to be in good agreement with its experimental value. Our calculated electronic structure is also compared in detail with a recent tight-binding. A linear-response approach to density-functional theory is used to calculate the phonon spectrum and density of states for MgAuSn.     

Interfacial properties of Ce<Subscript>0.75</Subscript>Zr<Subscript>0.25</Subscript>O<Subscript>2</Subscript> supported noble metals (Pd,Pt) from first principles

First-principles electronic structure calculations of noble metals (NM=Pd, Pt)/Ce_0.75Zr_0.25O₂ systems are presented. It is found that: the NM adatoms do not prefer to stay at the atop or the bridge sites of the cations (Ce and Zr), but prefer to be adsorbed at or around the anion sites. The most preferable adsorption sites for both the Pd and Pt adatoms are the O-bridge sites neighboring the Zr dopant. The Pt adatom show much stronger interaction with the Ce_0.75Zr_0.25O₂(111) surface than does the Pd adatom. The interactions of the NM/Ce_0.75Zr_0.25O₂(111) interfaces are stronger than those of the corresponding NM/ceria(111) interfaces. There are some metal induced gap states (MIGS) appeared in the gaps of the NM/Ce_0.75Zr_0.25O₂(111) interfaces, which are important to catalytic properties of the NM/Ce_0.75Zr_0.25O₂(111) catalysts.     

Structural properties of zinc-blende Ga<Subscript>x</Subscript>In<Subscript>1-x</Subscript>N: ab initio calculations

We present a theoretical study of the structural properties, namely lattice constant, bulk modulus and its pressure derivative of zinc-blende Ga_xIn_1-xN. The calculations are performed using first-principles calculations in the framework of the density-functional-theory within the local density approximation under the virtual crystal approximation. The computed values are in good agreement with the available experimental data. The composition dependence of the studied quantities is examined. Besides, the deviation of the alloy lattice constant from Vegard's law is evaluated.     

First principles study of the electronic structures of erbium silicides with non-frozen 4f treatment

The electronic structures (especially 4f states) of hexagonal and tetragonal erbium silicides are investigated within density functional theory. Contrary to previous theoretical studies on these compounds, Er 4f electrons are treated as valence state electrons, explicitly taking into account the on-site Coulomb interactions. Total energy calculations show that the relaxed hexagonal ErSi_1.7 is more stable than the tetragonal structure, consistently with related experimental observations. The calculated total density of states of the hexagonal ErSi_1.7 agrees well with the experimental valence-band spectrum in a wide energy range from 0 to 12 eV below the Fermi level. In addition, our study indicates that the occupied 4f states in erbium silicides can also locate in the energy range of 0–4.0 eV below the Fermi energy, much different from the prediction of the previously adopted Er ion model.     

First principles calculations of structural,electronic and optical properties of various phases of CaS

First principles calculations have been performed within the framework of density functional theory to investigate the structural, electronic and optical properties of all four possible B1, B2, B3 and B4 phases of CaS. Apart from the standard local density approximation (LDA) and GGA (PBE), a more accurate nonempirical density functional generalized gradient approximation (GGA), as proposed by Wu and Cohen [Phys. Rev. B 73, 235116 (2006)] for the exchange-correlation energy, E_XC, has been attempted in these calculations. Calculated electronic structure and the density of states are analyzed in terms of the contribution of Ca d states and S s and p states in determining the nature of the fundamental band gap in various phases. Reflectivity, R (ω), the real and imaginary part of the dielectric functions, ε(ω), have been calculated for all the phases and the results have been discussed and compared with the existing experimental data.     

First-principles investigation of electronic and optical properties in wurtzite Zn<Subscript>1-x</Subscript>Mg<Subscript>x</Subscript>O

A first-principles study has been performed to evaluate the electronic and optical properties of wurtzite Zn_1-xMg_xO. Substitutional doping is considered with Mg concentrations of x = 0, 0.0625, 0.125, 0.1875 and 0.25, respectively. Mg incorporation can induce band gap widening due to the decrease of Zn 4s states. The imaginary part of the dielectric function shows that the optical transition from band edge emission decreases slightly with increasing Mg contents. The optical band gap also increases from 3.2 to 3.7 eV with increasing Mg contents from 0.0625 to 0.25. The calculated results suggest that relatively high Mg concentration is necessary for effective band gap engineering of wurtzite Zn_1-xMg_xO.     

First-principles study of the optical properties of PbFX (X = Cl,Br, I) compounds in its matlockite-type structure

We present the results of the ab initio theoretical study of the optical properties for PbFX (X = Cl, Br, I) compounds in its matlockite-type structure using the full potential linearized augmented plane wave (FP-LAPW) method as implemented in the WIEN2K code. We employed generalized gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy. Also we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band structure calculations. Our calculations show that the valence band maximum (VBM) and conduction band minimum (CBM) are located at Z resulting in a direct energy gap. We present calculations of the frequency-dependent complex dielectric function ε( ω) and its zero-frequency limit ε₁ ( 0 ). We find that the values of ε₁ ( 0 ) increases with decreasing the energy gap. The reflectivity spectra and absorption coefficient has been calculated and compared with the available experimental data. The optical properties are analyzed and the origin of some of the peaks in the spectra is discussed in terms of the calculated electronic structure.     

Trap-recharging waves versus damped,forced charge-density oscillations in hexagonal silicon carbide

The structural parameters and hydrostatic pressure coefficients of CdS_xTe_1-x in the two phases, namely zinc-blende and NaCl as well as the transition pressures from zinc-blende to NaCl structures at various S concentrations are presented. The calculations are performed using the full potential linearized augmented plane wave (FP-LAPW) method within the density functional theory (DFT) in the local density approximation (LDA), and two developed refinements, namely the generalized gradient approximation (GGA) of Perdew et al. for the structural properties and Engel-Vosko for the band structure calculations. Detailed comparisons are made with published experimental and theoretical data and show generally good agreement. The present results regarding the studied quantities for compositions x in the 0–1 range (0 < x < 1) and for the NaCl phase are predictions and may serve as a reference for experimental work.     

A new real-space algorithm for realistic density functional calculations

We present the implementation of a fast real-space algorithm for density functional calculations for atomic nanoclusters. The numerical method is based on a fourth-order operator splitting technique for the solution of the Kohn-Sham equation [1]. The convergence of the procedure is about one order of magnitude better than that of previously used second-order operator factorizations. The method has now been extended to deal with non-local pseudopotentials of the Kleinman-Bylander [2] type, permitting calculations for realistic systems, without significantly degrading the convergence rate. We demonstrate the convergence of the method for the examples C and C₆₀ and present examples of structure calculations of Na and Mg clusters.     

Elastic and brittle properties of the B2-MgRE (RE = Sc,Y, Ce,Pr, Nd,Gd, Tb,Dy, Ho,Er) intermetallics

The brittle and elastic properties of the B2-MgRE (RE = Sc, Y, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er) intermetallics have been investigated using first-principles density functional calculations. The calculated equilibrium lattice constants and enthalpies of formation are in overall agreement with the available experiment and theoretical results. The related physical properties of those compounds are compared with that of ductile YCu. The Fermi energy occurs above a peak in the DOS for B2-MgRE intermetallics, whereas for ductile YCu the Fermi energy occurs near a minimum in the DOS. For B2-YCu, the partial density of states of d-states at the Fermi energy is low, while for B2-MgRE the RE d-states are partially occupied, indicating their important roles in the directional bonding for this material. The Cauchy pressure (C₁₂-C₄₄) and the ratio of bulk to shear modulus B/G are used to assess the brittle/ductile behavior of B2-MgRE and YCu compounds. It can be concluded that the B2-MgRE alloys have brittle behavior. MgSc is the most brittle, and MgHo is the least brittle amongst those alloys.     

Theory of the optical spectrum of Na<Subscript>2</Subscript> on <Superscript>4</Superscript>He droplets: effects of the zero-point energy of the nearest atoms

We investigate, using first-principles calculations, the electronic structure of substitutional and vacancy defects in a boron nitride monolayer. We found that the incorporation of a substitutional carbon atom induces appreciable modification on the electronic properties, when compared to a non-defective boron nitride sheet. The incorporation of substitutional carbon impurity also induces a significant reduction of the work function. In addition, we found that defects introduce electronic states in the energy-gap region, with strong impact on the optical properties of the material. The calculation results indicate that spin polarization is obtained when substitutional impurities or vacancy defects are introduced in the structure     

Ab initio study on elastic and thermodynamical properties of Ti<Subscript>1-x</Subscript>Zr<Subscript>x</Subscript>C

Elastic and Thermodynamical properties of Ti_1-xZr_xC have been investigated using LAPW + lo within the density-functional theory with the generalized gradient approximation. We have studied the stability of the alloy Ti_1-xZr_xC as a function of Zr composition in rocksalt (B1) structure by calculating the elastic constants C₁₁, C₁₂ and C₄₄ using the tetragonal and trigonal distortions. Mechanical properties such as Poisson ratio, bulk, shear and Young’s modulii of Ti_1-xZr_xC are calculated. The Debye temperature and hardness are also computed for the first time to our knowledge for Ti_1-xZr_xC in various compositions.     

First principles study of structural,magnetic and electronic properties of CrAs

Abstract

We report ab initio density functional calculations of the structural and magnetic properties, and the electronic structure of CrAs. To simulate the observed pressure-driven experimental results, we perform our analysis for different volumes of the unit cell, showing that the structural, magnetic and electronic properties strongly depend on the size of the cell. We find that the calculated quantities are in good agreement with the experimental data, and we review our results in terms of the observed superconductivity.     

Geometry and electronic properties of single vacancies in achiral carbon nanotubes

An ideal single vacancy can be formed by removing one carbon atom from a hexagonal network. The vacancy is one of the most important defect structures in carbon nanotubes (CNTs). Vacancies can affect the mechanical, chemical, and electronic properties of CNTs. We have systematically investigated single vacancies and their related point defects for achiral, single-walled carbon nanotubes (SWNTs) using first-principles calculations. The structures around single vacancies undergo reconstruction without constraint, forming ground-stateor metastable-state structures. The 5-1DB and 3DB point defects can be formed in armchair CNTS, while the 5-1DB-P and 5-1DB-T point defects can be formed in zigzag CNTs. The related point defects can transform into each other under certain conditions. The formation energies of armchair CNTs change smoothly with the tube radius, while in the case of the 3DB defect, as the radius get larger, the formation energies tend towards a constant value.     

Piezoelectricity of ordered (ScxGa1-xN) alloys from first principles

First-principles calculations are performed to compute the e₃₃ piezoelectric coefficients of GaN, ScN and (Sc_xGa_1-xN) alloys exhibiting an alternation of hexagonal GaN, with hexagonal ScN along the c-axis. For Sc compositions larger than 50%, each atom has nearly five nearest neighbors (i.e., the ground state exhibits a phase that is five-fold coordinated). On the other hand, Sc-deficient (Sc, Ga) N alloys adopt a ground-state that is four-fold coordinated). The magnitude of e₃₃ in the Sc-deficient ideally ordered (Sc_0.25Ga_0.75N) is found to be larger than the magnitude of the corresponding e₃₃ coefficients resulting from the compositional weighted average over the hexagonal (h-ScN) and the wurtzite (w-GaN) parent compounds. On the other hand, the e₃₃ coefficients of the Sc-rich ordered (Sc_0.75Ga_0.25N) is found to be negligibly small. In addition, e₃₃ piezoelectric coefficients in ordered (Sc_0.5Ga_0.5N) exhibit quite large magnitudes, due to the nonpolar to polar transition occurs at Sc composition x = 0.5, and thus can bridge the corresponding coefficients of (Ga, In) N and ferroelectric alloys. The microscopic origins for this huge enhancement in the piezoelectric behavior in Sc-low and Sc-intermediate alloys and the role of each atom are revealed and discussed.