基于半导体光放大器四波混频原理的光采样

建立了可研究强超短光脉冲放大特性且包含自由载流子吸收、受激辐射、双光子吸收、光谱烧孔和超快非线性折射效应的半导体光放大器理论模型,用以建立脉冲四波混频模型,并进一步仿真了基于半导体光放大器的光采样过程,重点讨论了自由载流子吸收、双光子吸收效应对采样特性的影响。仿真结果与实验结果相符。     

FEL诱导半导体材料非线性光吸收

应用北京自由电子激光(BFEL)对典型的红外光电子材料Hg_1-xCd_xTe ,InSb和InAs进行了非线性光吸收研究.利用FEL的高光子密度和皮秒量级的短脉冲宽度特性，研究了双光子吸收(TPA)以及光生载流子吸收(FCA)共同作用机理，从实验上直接证实了在强入射能量下，FCA是不可忽略的光吸收过程，提取了精确的自由载流子吸收截面参数. 关键词： FEL 双光子吸收 光生载流子吸收 吸收截面 载流子寿命     

半导体光放大器亚皮秒量级超快动态特性的研究

通过考虑脉冲频谱的增益色散，提出了一个分析亚皮秒光脉冲在半导体光放大器(SOA)中传输的新思路.分别对超快光脉冲在时域和频域内进行离散化，建立了一个更为合理的传输数值模型.基于该模型，观察到了脉冲频谱的明显漂移，并探讨了漂移量与脉冲载波波长、脉冲能量、脉冲宽度、SOA长度和注入电流等外部条件之间的关系，从理论上解释了文献没有证实的实验结果.同时，基于交叉增益调制原理，利用双光束结构，描述了载流子加热、光谱烧孔效应和双光子吸收等非线性效应引起的增益压缩.理论分析的结果为改善SOA的动态特性提供了指导. 关键词： 半导体光放大器 超快非线性效应 增益色散性     

超短激光脉冲在水中的非线性传输特性研究

基于扩展的非线性薛定谔方程及与其耦合的电子密度演化方程,理论研究了超短激光强脉冲在水中的非线性传输特性.理论模型综合考虑了衍射、正常群速度色散,多光子吸收、自聚焦及激光诱导产生的等离子体对光脉冲的自散焦效应.采用有限差分法模拟得到超短脉冲在传输过程中轴向上光功密度和等离子体密度的时空分布.系统分析了超短脉冲在水中传输的动力学过程,讨论了非线性自聚焦和等离子体自散焦效应在脉冲传输过程中的竞争关系.同时研究了不同入射激光能量,脉宽和聚焦条件对等离子体丝的时宅结构和脉冲能流横向分布的影响.该研究将有助于理解和推动超短光脉冲在激光医学、激光安全防护和水中激光加工中的应用.     

半导体光放大器超快折射率变化动态特性的研究

建立了分析半导体光放大器（SOA）飞秒量级超快动态特性的数值模型,考虑了增益色散以及群速度色散,能更精确地反映飞秒级超短脉冲经过SOA时的传输特性.基于该模型,可以分析由载流子密度脉动以及载流子加热对折射率变化的影响.同时,也考虑了不同的工作条件以及SOA的结构参数对折射率的影响.理论分析和模拟实验为优化SOA的结构、改善SOA飞秒量级超高速动态特性提供了理论指导. 关键词： 半导体光放大器 折射率动态特性 增益色散 群速度色散     

抽运能量对受激布里渊散射光限幅特性的影响

采用布里渊噪声起源模型,数值模拟了受激布里渊散射介质CCl4对波长1064nm的Nd：YAG纳秒激光脉冲的传输特性及光限幅特性。入射抽运脉冲能量较低时,非线性介质对纳秒激光脉冲呈光学透明。入射抽运脉冲能量高于受激布里渊散射产生阈值后,透射脉冲峰值受限,脉宽压缩,能量趋于饱和,说明该光学系统同时具有光功率限幅和能量限幅的光限幅特性。利用理论模型模拟了如下光限幅参量：透射脉冲峰值功率、透射能量、能量透射率、脉宽压缩率依赖抽运光能量的变化关系。相应的理论模拟计算结果由实验进行验证,实验结果与理论模拟相符合。     

全光波长变换器消光比特性的理论研究

半导体光放大器（SOA）是具有优良非线性效应的光子器件,在光开关、波长变换、光逻辑运算中有重要的应用。从SOA载流子的速率方程和耦合波方程出发,建立了基于SOA的交叉增益调制波长变换理论模型,并利用分段模型分析方法,对SOA的交叉增益调制波长变换的消光比特性进行了详细的研究。研究结果表明,适当增大信号光功率、减小探测光功率并选择合适的波长差和SOA长度,可以有效地提高传输信号的消光比。     

基于单端半导体光放大器的可调谐超短光脉冲源理论与实验研究

超短光脉冲源是光时分复用(OTDM)系统中的关键器件.提出了一种基于单端半导体光放大器(SOA)的注入型主动锁模光纤激光器产生超短光脉冲的方案，建立了该方案的理论模型.实验实现了高消光比稳定的重复频率10—40GHz皮秒级光脉冲的输出，输出波长在30nm范围内连续可调. 关键词： 超短光脉冲 单端半导体光放大器 主动锁模     

光脉冲在半导体中非线性传输特性的时域和频域分析

本文从理论上研究了半导体非共振透明区光脉冲非线性传输的时域和频域行为,并对应用自由载流子非线性折射效应来构造非线性方向耦合器的可能性进行了分析。     

高阶效应影响下亮孤子在超常介质中的传输特性

基于描述超常介质中超短脉冲传输的理论模型,解析得到了超常介质中几种形式的精确亮孤子解及其存在条件.在无损耗的Drude模型下,分析了由于色散的介电常数和磁导率而导致的各阶色散与非线性效应,尤其是高阶效应对亮孤子传输特性的影响.结果表明,高阶色散和高阶非线性效应在亮孤子的形成和传输特性方面起着至关重要的作用.     

Ultra-short optical pulse shaping using semiconductor optical amplifier

Optical ultra-short pulse compression and amplification using semiconductor optical amplifier (SOA) is presented. Using pump-probe pulse configuration, we present an SOA model which includes the nonlinear effects such as, spectral hole burning (SHB), carrier heating (CH), two-photon absorption (TPA) and group velocity dispersion (GVD) taking into account gain spectrum effect. Then by adjusting time delay between the pump pulse and probe pulse we use the model for simultaneous compression and amplification of probe pulse. We also analyze the four wave mixing (FWM) signal during pulse compression process. It is shown that dispersive effect of GVD on output probe pulse becomes more important for larger cavity length and probe-pump pulses relative time delays.     

All-optical switchable UWB pulses generation,modulation and transmission

We proposed and demonstrated all-optical polarity- and shape-switchable ultrawideband (UWB) Gaussian pulses generation schemes using a single polarization interferometer (PI) or a semiconductor optical amplifier (SOA) cascaded by a PI. When an optical signal with dark return-to-zero (RZ) format propagates directly through a single PI, a pair of polarity-reversed UWB monocycle pulses and a positive UWB doublet pulse is acquired respectively only by adjusting the polarization controllers, without changing the bias of the intensity modulator. If a SOA is connected at the input of the PI to firstly implement the first-order differential function to the input dark RZ pulse utilizing gain saturation effect of the SOA, both polarity- and shape-switchable UWB Gaussian monocycle and doublet pulses are all acquired from the cascaded system. Moreover, if a nonreturn-to-zero control signal is introduced into the SOA, utilizing the cross-gain modulation (XGM) effect of the SOA and the differential characteristic of PI, all-optical shape modulation to UWB signals can be realized, and the polarity of the modulated UWB pulses can also be switched. Also, UWB signal transmission characteristics in fiber link were investigated.     

Two-photon absorption of high-power picosecond pulses in PbWO<Subscript>4</Subscript>, ZnWO<Subscript>4</Subscript>, PbMoO<Subscript>4</Subscript>, and CaMoO<Subscript>4</Subscript> crystals

The nonlinear process of two-photon interband absorption is studied in tungstate and molybdate oxide crystals excited by a sequence of high-power picosecond pulses with a wavelength of 523.5 nm. The transmission of the crystals is measured for the excitation pulse intensity up to 100 GW/cm². The pulse intensity in the crystals initially transparent at a wavelength of 523.5 nm is strongly limited due to two-photon absorption (TPA), and the reciprocal transmission in PbWO₄ and ZnWO₄ crystals reaches 50–60. In all crystals, TPA induces long-lived one-photon absorption, which affects the nonlinear process dynamics and leads to a hysteresis in the dependence of the transmission on the laser excitation intensity. Absorption dichroism manifests itself in a significant difference in the transmission intensities when the principal orthogonal optical axes of the crystals are excited. The TPA coefficients are determined during the excitation of two optical axes of the crystals. TPA coefficients β for the crystals vary over a wide range, namely, from β = 2.4 cm/GW for PbMoO₄ to β = 0.14 cm/GW for CaMoO₄, and the values of β can differ almost threefold when different optical axes of a crystal are excited. Good agreement is achieved between the measured intensities limited by TPA and the estimates calculated from the measured nonlinear coefficients. Stimulated Raman scattering (SRS) upon excitation at a wavelength of 523.5 nm is only detected in two of the four crystals under study. The experimental results make it possible to explain the suppression of SRS by its competition with TPA, and the measured nonlinear coefficients are used to estimate this suppression.     

Analysis of ultrafast nonlinear phenomena��s influences on output optical pulses and four-wave mixing characteristics in semiconductor optical amplifiers

We have analysed the output pulse characteristics of semiconductor optical amplifier (SOA). It is shown that they can be modified due to the variation of input parameters, such as, gain, input pulsewidth, input pulse energy and effects imposed by the medium. Therefore, the influence of these parameters are analysed on the output pulse shape, spectrum, chirp and pulsewidth. We have used the nonlinear propagation equation taking into account the gain spectrum dynamics, gain saturation which depends on carrier depletion, carrier heating, spectral hole-burning, group velocity dispersion, self-phase modulation and two photon absorption. We have used the finite-difference beam propagation method to simulate the wave evolution both in time and spectral domain in the SOA. We have also simulated the four-wave mixing characteristics between pulses for various input pulses. An accurate output pulse shape can be achieved by controlling the mentioned parameters. To the authors knowledge, pulse shaping in co-propagation regime due to medium effect and input pulse shapes in presence of all nonlinear effects relevant to picosecond regime have been studied comprehensively, for the first time in this work.     

Characteristics of wavelength conversion of short optical pulses in quantum dot semiconductor optical amplifiers

The characteristics of short optical pulse four-wave mixing (FWM) and amplification in quantum dot semiconductor optical amplifiers (QD-SOAs) are investigated taken into account the effect of the multi-discrete QD energy levels. Different saturation and recovery response for the electron and hole states are observed, which is attributed to different energy spacing between the energy states. We found that the 3 dB saturation energy of QD-SOA depends on the pulse width for short input pulses. Also, the optimum time delay between the probe and pump pulses in QD-SOAs, which provides maximum FWM efficiency in QD-SOAs, is smaller than the optimum delay in quantum well SOA.     

Ultrawideband monocycle generation using cross-phase modulation in a semiconductor optical amplifier

We propose a novel scheme to generate ultrawideband (UWB) monocycle pulses based on cross-phase modulation (XPM) of a semiconductor optical amplifier (SOA). The proposed system consists of a SOA and an optical bandpass filter (OBF). Due to the XPM, a continuous wave (CW) probe signal is phase modulated by another optical Gauss pulse in the SOA. The OBF will convert the phase modulation to intensity modulation. A pair of polarity-reversed UWB monocycle pulses is achieved by locating the probe carrier at the positive and negative linear slopes of the OBF. Both cases conform to the UWB definition of the Federal Communications Commission.     

Propagation of ultrafast pulses in the anomalous-dispersion regime of silicon-on-insulator strip nanowaveguides

The dynamic evolution of ultrafast high-intensity pulses with a 100 fs half-width at 1/e intensity point based on the silicon-on-insulator (SOI) strip nanowaveguides is considered and investigated numerically under the condition of anomalous group-velocity dispersion (GVD) regime. For ultrafast high-intensity pulses propagating in millimeter-long SOI nanowaveguides, the interplay between the dispersion and nonlinear effects such as the two-photon absorption, free-carrier absorption, free-carrier dispersion, and self-phase modulation has to be taken into account, which results in the significant optical wave breaking phenomenon that occurs near the pulse leading edge for an unchirped Gaussian pulse in the anomalous GVD regime. However, when the input Gaussian pulse with linear up-chirp is introduced, the position of the optical wave breaking shifts from the leading pulse edge to its trailing edge along the several millimeters-long SOI nanowaveguides.     

Analysis of the Switching Characteristics of TOAD

The dynamic gain responses of the semiconductor optical amplifier (SOA) in a terahertz optical asymmetric demultiplexer (TOAD) to intense control pulses with different input energies and pulse widths are investigated. The influences on the switching characteristics of TOAD for different control pulse energies, widths, loop time asymmetry, and time delays between the signal pulse and control pulse are studied and analyzed in detail. The theoretical analysis coincides well with the experimental result.     

CdSe/ZnS核-壳结构量子点的非线性光学吸收

利用开孔Z扫描技术研究了吸收峰分别为553 nm和503 nm的两种尺寸CdSe/ZnS核-壳结构量子点溶液的非线性吸收性质.对于532 nm,6 ns激光脉冲,两种材料均表现出饱和吸收向反饱和吸收转化的现象.数值模拟结果表明：当吸收峰波长大于激光波长时,饱和吸收过程由快、慢两种机制组成,分别对应基态载流子被激发至不同的激发态,而强光下的反饱和吸收与快过程相关;当吸收峰波长小于激光波长时,饱和吸收主要由快过程机制引起,强光下的反饱和吸收源自激发态吸收和双光子吸收.我们的研究结果表明半导体量子点是研制光开关和光限制器件的理想候选材料.