首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
Narrow-gap Ga1−xMnxSb layers grown on hybrid ZnTe/GaAs substrates are observed to be ferromagnetic by SQUID magnetization and anomalous Hall effect measurements. The layers display an easy axis of magnetization perpendicular to the layer plane, in contrast to in-plane easy axis orientation observed in Ga1−xMnxSb grown on GaSb substrates. Resistivity measured in the Ga1−xMnxSb/ZnTe/GaAs system shows a well-defined maximum at temperatures close to the ferromagnetic/paramagnetic transition. We determined the spontaneous resistivity anisotropy in Ga0.98Mn0.02Sb grown on hybrid ZnTe/GaAs substrates and compared it to that observed on Ga0.98Mn0.02Sb grown on a GaSb buffer. These results should provide a valuable test for future theories of transport in ferromagnetic semiconductors.  相似文献   

2.
The effect of electron-beam irradiation on the magnetic properties of (Ga1−xMnx)As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (Tc) of the annealed (Ga0.933Mn0.067)As thin films was 160 K. The Tc value for the as-grown (Ga0.933Mn0.067)As thin films drastically decreased with increasing electron-beam current. This significant decrease in the Tc value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga1−xMnx)As thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation.  相似文献   

3.
报道了对于0≤x≤1的FexMn1-x合金在GaAs(001)表面上分子束外延的结构与磁性的实验结果,当x>0.8时,FexMn1-x合金以单晶体心立方结构生长;当x<0.35时,则以单晶面心立方结构生长;对于0.35xMn1-x生长的结构比较复杂,而正是在这一区域中,该合金发生了从铁磁相到反铁磁相的转变. 关键词:  相似文献   

4.
[(GaAs) m (Fe) n ] p composite films on GaAs(001) substrates obtained by molecular beam deposition methods at T s = 580°C have been thermally annealed, and magnetic/structural changes caused by the annealing have been measured to study the relation between room-temperature photo-magnetic effect and by-products in composite films. Annealing inhomogeneous [(GaAs)8(Fe)5]20 film, prepared by alternate beam deposition of Fe and GaAs, results in an increase in saturation magnetization, whereas the room-temperature photo-enhanced magnetization (RT-PEM) vanishes. Metamagnetic Fe3Ga4 is suppressed with the formation of ferromagnetic Fe3Ga2−x As x . Observed results suggest two important points: firstly, metamagnetic Fe3Ga4 compound is most likely meta-stable bi-product and may play a principle role for RT-PEM, and secondly, ferromagnetic Fe3GaAs and its derivatives are the stable form in Ga-As-Fe ternary system.  相似文献   

5.
Mn-doped GaN films (Ga1−xMnxN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga1−xMnxN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn3+ due to the thermal treatment. Mn3+, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn3+ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn3+ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase MnxGay formation.  相似文献   

6.
The effect of elastic stresses (compressive, tensile) on the magnetic properties of epitaxial GaMnAs layers prepared by laser deposition of solid-state targets in a gas atmosphere on different buffer sublayers (In x Ga1 − x As and In x Ga1 − x P) and substrates (GaAs, InP) has been investigated. It has been established from the investigations of magnetic-field dependences of the Hall resistance that all layers exhibit ferromagnetic properties with the Curie temperature ∼50 K. It has been shown that, in the case of tensile stresses in GaMnAs layers (In x Ga1 − x As and In x Ga1 − x P buffers and InP substrate), the anomalous Hall effect shape demonstrates a predominant orientation of the easy-magnetization axis in the growth direction, unlike the GaMnAs layers prepared on a GaAs substrate (with compressive stresses), which demonstrate the predominance of the component of the magnetization vector in the layer plane.  相似文献   

7.
We report the first demonstration of n-type III–V metal-semiconductor field-effect transistors (nMESFETs) with IV group material hetero-junction source and drain (S/D) technology. A selective epitaxial growth of germanium (Ge) in the recessed gallium arsenide (GaAs) S/D regions is successfully developed using ultra-high vacuum chemical vapor deposition (UHVCVD) system. The dual channel structure includes an additional 10-nm higher mobility n-In0.2Ga0.8As layer on n-GaAs channel and is introduced to further improve the device performance. The n-MESFET, combining embedded-Ge S/D with In0.2Ga0.8As/GaAs channel, exhibits good transfer properties with a drain current on/off ratio of approximately 103. Due to the small barrier height of Ti/In0.2Ga0.8As Schottky contact, a lattice-matched wide bandgap In0.49Ga0.51P dielectric layer is also integrated into the device architecture to build a higher electron Schottky barrier height (SBH) for gate leakage current reduction. The Ti/In0.49Ga0.51P/n-In0.2Ga0.8As Schottky diode shows a comparable leakage level to Ti/n-GaAs with 2 × 10?2 A/cm2 at a gate voltage of ?2.0 V.  相似文献   

8.
The correlation of electrical properties with magnetic properties for the (Ga1−xMnx)As epilayer was investigated. For electrical transport measurements, it was clearly observed that the electrical mobility is increased with decreasing temperatures for both the (Ga0.974Mn0.026)As/LT-GaAs epilayer and the LT-GaAs:Be epilayer. However, a different behavior was observed at the cryogenic temperature region. The electrical mobility of (Ga0.974Mn0.026)As/LT-GaAs epilayer increases with decreasing temperature, while the mobility of LT-GaAs:Be epilayer decreases with decreasing temperature. In Arrhenius plots of carrier mobility for the (Ga0.974Mn0.026)As/LT-GaAs epilayer, the critical point is observed at 69 K, and this value is almost the same as the TC. This result indicates that the carrier transport in ferromagnetic (Ga1−xMnx)As epilayers might be related to a spin-ordering effect because the spins will be arranged with the same direction below the TC, and this will lead to reducing the probability of spin-disorder scattering. Therefore, the observation of a gradual drop below the TC in the temperature-dependent resistivity curve is expected to be a result of the spin-ordering effect in the ferromagnetic (Ga0.974Mn0.026)As/LT-GaAs epilayer.  相似文献   

9.
Ferromagnetic ordering of two types (depending on the sample geometry) is found to occur in a thin Ga1 − x Mn x As alloy layer (Mn δ layer) in heterostructures containing an InGaAs/GaAs quantum well. Singular samples in which the δ Mn layer is parallel to the (001) GaAs plane exhibit the “3/2” Bloch temperature dependence of magnetization, and vicinal samples in which the δ Mn layer deviates from the (001) GaAs plane exhibit a “percolation” ferromagnetic transition. The photoluminescence polarization of the quantum well is shown to follow changes in the magnetization of the Mn δ layer as a function of temperature according to the Bloch law in the singular samples and to a percolation law in the vicinal samples.  相似文献   

10.
(Ga1−xMnx)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga1−xMnx)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga1−xMnx)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga1−xMnx)N thin films appeared. These results indicate that the (Ga1−xMnx)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.  相似文献   

11.
为了进一步改善材料的性能和探索新的材料,将Mn2NiGa合金中的Ni元素分别用Fe和Co替代,制备了Mn50Ni25-xFe(Co)xGa25系列合金. 研究了Fe和Co元素对Mn2NiGa合金的结构、马氏体相变行为、磁性和机械性能等方面的影响. 关键词: 铁磁形状记忆合金 Heusler合金 50Ni25-xFe(Co)xGa25')" href="#">Mn50Ni25-xFe(Co)xGa25  相似文献   

12.
Manganese ions were implanted into unintentionally doped GaN epilayers grown by metal organic chemical vapor deposition (MOCVD). The (Ga,Mn)N and GaxMny phases were formed after Mn-implanted undoped GaN epilayers annealed at 700 and 800 °C. The samples showed ferromagnetic behavior at room temperature with the highest magnetization obtained in the sample annealed at 800 °C. Ferromagnetic signal reduces as annealing temperature increased above 900 °C. It is believed that the room-temperature ferromagnetic property of Mn-implanted undoped GaN epilayers are mainly from (Ga,Mn)N. The GaxMny phases play a critical role in providing holes and also contribute to increasing the ferromagnetic property.  相似文献   

13.
谭昌龙  姜久兴  田晓华  蔡伟 《中国物理 B》2010,19(10):107102-107102
The effect of Co content on magnetic property and phase stability of Ni50-xMn25Ga25Cox ferromagnetic shape memory alloys has been investigated using first-principles calculations. The total energy difference between paramagnetic and ferromagnetic state of austenite plays an important role in the magnetic transition. The high Curie temperature can be attributed to the stronger Co-Mn exchange interaction as compared to the Ni-Mn one. The phase stability of Ni50-xMn25Ga25Cox austenite increases with increasing Co content, which is discussed based on the electronic structure.  相似文献   

14.
(Ga1−xMnx)N/GaN digital ferromagnetic heterostructures (DFHs) and (Ga1−xMnx)N/GaN grown on GaN buffer layers by using molecular beam epitaxy have been investigated. The photoluminescence (PL) spectra showed band-edge exciton transitions. They also showed peaks corresponding to the neutral donor-bound exciton and the exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitution. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga1−xMnx)N/GaN DFHs decreased with increasing Mn mole fraction and that the saturation magnetic moment and the coercive field in the (Ga1−xMnx)N/GaN DFHs were much larger than those in (Ga1−xMnx)N thin films. These results indicate that the (Ga1−xMnx)N/GaN DFHs hold promise for potential applications in spintronic devices.  相似文献   

15.
Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin injector experimentally. Here we demonstrate electrical spin injection and detection in a GaAs/AlGaAs p-i-n diode using a semimagnetic II–VI semiconductor (Zn1 − xyBexMnySe) as a spin aligner. The degree of circular polarization of the electroluminescence from the diode is related to the spin polarization of the conduction electrons. Thus, it may be used as a detector for injected spin-polarized carriers. Our experimental results indicate a spin polarization of the injected electrons of up to 90% and are reproduced for several samples. The degree of optical polarization depends strongly on the Mn concentration and the thickness of the spin aligner. Electroluminescence from a reference sample without spin aligner as well as photoluminescence after unpolarized excitation in the spin aligner sample show only the intrinsic polarization in an external magnetic field due to the GaAs bandstructure. We can thus exclude side effects from Faraday effect or magnetic circular dichroism in the semimagnetic layer as the origin of the observed circularly polarized electroluminescence.  相似文献   

16.
In this paper, we proposed a new p-type ZnO doping method with metal organic chemical vapor deposition (MOCVD) technology by inserting a GaAs interlayer between substrate and ZnO epitaxial layer. The doping concentration of p-type ZnO film is able to be controlled by adjusting the thickness of the GaAs interlayer. With this method, we fabricated n-ZnO/p-ZnO:As homojunction light-emitting diode (LED) on ITO-glass substrate pre-coated with 20 nm GaAs interlayer. The device exhibits a typical rectifying behavior by current-voltage (I-V) measurement. When the device is forward biased, UV-vis electroluminescence (EL) emissions can be observed clearly.  相似文献   

17.
Local structure of Mn atoms in Ga1−xMnxAs epilayers was studied using the X-ray absorption fine structure (XAFS) at Mn K-edge. X-ray near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques were used. XAFS spectra for different Mn sites has been calculated and compared with the experimental data. Multi-parameter fitting of the EXAFS data indicates that 15-25% of Mn atoms are in interstitial sites in the as grown films. The Mn-As bond length has been found longer than Ga-As bond length in GaAs for both substitutional (MnGa) and interstitial (MnI) sites.  相似文献   

18.
The present paper reviews works devoted to control over the properties of epitaxial GaAs by incorporation of excess (non-stoichiometric) arsenic into the GaAs films grown by molecular-beam epitaxy (MBE) at low-temperature (LT). The effect of excess arsenic on the material structure and properties is analyzed for both as-grown and annealed LT-GaAs layers. The effect of doping on the incorporation of excess arsenic is also examined. The data on the effect of excess arsenic on the properties of the Ga0.47In0.53As solid solution are presented. The specific features of the mechanism of the excess arsenic incorporation into the solid phase during the low-temperature epitaxial growth are discussed.  相似文献   

19.
The composition and structure of nanodimensional Ga1 – xNa x As phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.  相似文献   

20.
Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号