6H-SiC高场输运特性的多粒子蒙特卡罗研究

采用非抛物性能带模型,对6H-SiC高场电子输运特性进行了多粒子蒙特卡罗(Ensemble Monte Carlo)研究.研究表明：温度为296 K时,电子横向漂移速度在电场为2.0×104 V/cm处偏离线性区,5.0×105 V/cm处达到饱和.由EMC方法得到的电子横向饱和漂移速度为1.95×107 cm/s,纵向为6.0×106 cm/s,各向异性较为显著.当电场小于1.0×106 V/cm时,碰撞电离效应对高场电子漂移速度影响较小.另一方面,高场下电子平均能量的各向异性非常明显.电场大于2.0×105 V/cm时,极化光学声子散射对电子横向能量驰豫时间影响较大.当电场一定时,c轴方向的电子碰撞电离率随着温度的上升而增大.对非稳态高场输运特性的分析表明：阶跃电场强度为1.0×106 V/cm时,电子横向瞬态速度峰值接近3.0×107 cm/s,反应时间仅为百分之几皮秒量级.     

正对电极结构碳化硅光导开关的电路模型

利用SilvacoTCAD软件,在532 nm激光辐照下,对正对电极结构6H-SiC光导开关（SiC-PCSS）瞬态电流电场的分布及不同光功率下的伏安特性进行了仿真。结果表明:载流子速率在强场下达到饱和,并且电流电场在主要电流区域沿垂直于激光辐照方向均匀分布。提出SiC-PCSS电路模型的建模依据,可以近似条件化简得到PCSS电阻一般表达式的解,建立SiC-PCSS载流子迁移率随电场变化的PSpice模型,分析讨论了外电路参数对SiC-PCSS导通过程的影响。该模型模拟结果与已有实验结果吻合良好。     

SiC电子输运特性的Monte Carlo数值模拟

利用系综MonteCarlo法研究了2H ,4H和6HSiC的电子输运特性.在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射.通过计算,获得了低场下这几种不同SiC多型电子迁移率同温度的关系,并以4H SiC为例,重点分析了中性杂质散射的影响.最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究.将模拟结果同已有的实验数据进行了比较,发现当阶跃电场强度为10×106V·cm-1时,4H Sic电子横向瞬态速度峰值接近33×107cm·s^-1,6H Sic接近30×107cm·s^-1.     

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region $I-V$ model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physical-based simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.     

6H-SiC电子输运的Monte Carlo模拟

从实际测量和单粒子Monte Carlo模拟两个方面研究了6H-SiC的电子输运规律,在模拟中考 虑了6H-SiC主要的散射机理,模拟的结果体现了6H-SiC具有良好的高温和高场特性以及迁移 率的各向异性,其横向迁移率和纵向迁移率相差近5倍.模拟结果和实验数据的对比说明了对 6H-SiC输运特性的模拟是正确的. 关键词： 6H-SiC Monte Carlo模拟 迁移率 散射机理     

基于光导半导体的MHz高重频可调谐脉冲产生技术研究

随着微波光子学的发展,新型光导微波技术利用高重频脉冲簇激光,入射到线性光导半导体器件中产生可调谐高功率电磁脉冲的方式受到广泛关注。SiC光导半导体开关（PCSS）具有高击穿场强,高饱和载流子速率,高抗辐射能力,高热传导率和高温工作稳定性等优点,是产生高重频、高功率、超短脉冲的重要固态电子器件。介绍了一种基于钒补偿半绝缘4H-SiC PCSS的MHz重复频率亚纳秒脉冲发生器。该发生器采用1 MHz,1030 nm可调谐光脉冲宽度的激光簇驱动源,4H-SiC PCSS的厚度为0.8 mm。整系统可得到最大输出电功率176 kW、最小半高宽约为365 ps的MHz重频短脉冲。     

栅漏间表面外延层对4H-SiC功率MESFET击穿 特性的改善机理与结构优化

本文提出了一种带栅漏间表面p型外延层的新型MESFET结构并整合了能精确描述4H-SiC MESFET工作机理的数值模型,模型综合考虑了高场载流子饱和、雪崩碰撞离化以及电场调制等效应. 利用所建模型分析了表面外延层对器件沟道表面电场分布的改善作用,并采用突变结近似法对p型外延层参数与器件输出电流(I_ds)和击穿电压(V_B)的关系进行了研究.结果表明,通过在常规MESFET漏端处引入新的电场峰来降低栅极边缘的强电场峰并在栅漏之间的沟道表面引入p-n结内建电场进一步降低电场峰值,改善了表面电场沿电流方向的分布.通过与常规结构以及场板结构SiC MESFET的特性对比表明,本文提出的结构可以明显改善SiC MESFET的功率特性.此外,针对文中给定的器件结构,获得了优化的设计方案,选择p型外延层厚度为0.12 μupm,掺杂浓度为5× 10¹⁵ cm^-3,可使器件的V_B提高33%而保持I_ds基本不变.     

Electron drift velocity and mobility in graphene

We present a theoretical study of the electric transport properties of graphene-substrate systems. The drift velocity, mobility, and temperature of the electrons are self-consistently determined using the Boltzmann equilibrium equations. It is revealed that the electronic transport exhibits a distinctly nonlinear behavior. A very high mobility is achieved with the increase of the electric fields increase. The electron velocity is not completely saturated with the increase of the electric field. The temperature of the hot electrons depends quasi-linearly on the electric field. In addition, we show that the electron velocity, mobility, and electron temperature are sensitive to the electron density. These findings could be employed for the application of graphene for high-field nano-electronic devices.     

Electron transport in wurtzite InN

Using ensemble Monte Carlo simulation technique, we have calculated the transport properties of InN such as the drift velocity, the drift mobility, the average electron, energy relaxation times and momentum relaxation times at high electric field. The scattering mechanisms included scattering mechanisms are polar optical phonon, ionized impurity, acoustic phonon and intervalley phonon. It is found that the maximum peak velocity only occurs when the electric field is increased to a value above a certain critical field. This critical field is strongly dependent on InN parameters. The steady-state transport parameters are in fair agreement with other recent calculations.     

Theoretical assessment of electronic transport in InN

Among the group-III nitrides, InN displays markedly unusual electronic transport characteristics due to its smaller effective mass, high peak velocity and high background electron concentration. First, a non-local empirical pseudopotential band structure of InN is obtained in the light of recent experimental and first-principles results. This is utilized within an ensemble Monte Carlo framework to illuminate the interesting transport properties. It is observed that InN has a peak velocity which is about 75% higher than that of GaN while at higher fields its saturation velocity is lower than that of GaN. Because of the strongly degenerate regime brought about by the high background electron concentration, the electron–electron interaction is also investigated, but its effect on the steady-state and transient velocity–field characteristics is shown to be negligible. Finally, hot phonon generation due to excessive polar optical phonon production in the electron scattering and relaxation processes is accounted for. The main findings are the appreciable reduction in the saturation drift velocity and the slower recovery from the velocity overshoot regime. The time evolution of the hot phonon distribution is analysed in detail and it is observed to be extremely anisotropic, predominantly along the electric force direction.     

SiC/SiO_2界面粗糙散射对沟道迁移率影响的Monte Carlo研究

提出了一种SiC反型层表面粗糙散射的指数模型 ,并对 6H SiC反型层迁移率进行了单电子的MonteCarlo模拟 ,模拟中考虑了沟道区的量子化效应 .模拟结果表明 ,采用表面粗糙散射的指数模型能够使SiC反型层迁移率的模拟结果和实验值符合得更好 .模拟结果还反映出有效横向电场较高时表面粗糙散射的作用会变得更显著 ,电子的屏蔽效应降低了粗糙散射对沟道迁移率的影响 ,温度升高会引起沟道迁移率降低 .     

SiC/SiO2界面粗糙散射对沟道迁移率影响的Monte Carlo研究

提出了一种SiC反型层表面粗糙散射的指数模型,并对6H-SiC反型层迁移率进行了单电子的Monte Carlo模拟,模拟中考虑了沟道区的量子化效应.模拟结果表明,采用表面粗糙散射的指数模型能够使SiC反型层迁移率的模拟结果和实验值符合得更好.模拟结果还反映出有效横向电场较高时表面粗糙散射的作用会变得更显著,电子的屏蔽效应降低了粗糙散射对沟道迁移率的影响,温度升高会引起沟道迁移率降低. 关键词： 6H-SiC 反型层迁移率 表面粗糙散射 指数模型     

Numerical modelling of anisotropy in 4H－SiC MESFET‘s

A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characteristics, are demonstrated. The simulation results show obvious effects of the anisotropy for 4H-SiC and are in better accordance with the experimental results. The anisotropy for 4H-SiC should be involved in the device design to acquire better performances.     

Hot-Electron Magneto-Transport in InSb

The balance equations are used to investigate the hot electron magneto-transport in narrowgap semiconductor InSb at 77 K in crossed weak magnetic field and electric field. In the case of vanishing transverse velocity, the drift mobility and the Hall mobility are calculated and it is shown that the Hall factor in InSb at 77K is less than 1 and decreases with electric field. In the case of vanishing transverse electric field, the longitudinal velocity and the transverse velocity are calculated as a function of the magnetic field and the electric field. The effect of the magnetic field on the longitudinal velocity is different from that on the transverse velocity.     

Electron-phonon interaction and transport in semiconducting carbon nanotubes

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model. The mobility is derived using a multiband Boltzmann treatment. At high fields, the dominant scattering is interband scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of approximately 70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.     

Analytical model of a corona discharge from a conical electrode under saturation

Exact partial solutions are found for the electric field distribution in the outer region of a stationary unipolar corona discharge from an ideal conical needle in the space-charge-limited current mode with allowance for the electric field dependence of the ion mobility. It is assumed that only the very tip of the cone is responsible for the discharge, i.e., that the ionization zone is a point. The solutions are obtained by joining the spherically symmetric potential distribution in the drift space and the self-similar potential distribution in the space-charge-free region. Such solutions are outside the framework of the conventional Deutsch approximation, according to which the space charge insignificantly influences the shape of equipotential surfaces and electric lines of force. The dependence is derived of the corona discharge saturation current on the apex angle of the conical electrode and applied potential difference. A simple analytical model is suggested that describes drift in the point-plane electrode geometry under saturation as a superposition of two exact solutions for the field potential. In terms of this model, the angular distribution of the current density over the massive plane electrode is derived, which agrees well with Warburg??s empirical law.     

A Monte Carlo calculation of the voltage-current curves for GaxIn1−xSb solid solutions with allowance for scattering in the alloy

Monte Carlo calculations have been performed for the electron drift velocity in relation to electric field strength for certain Ga_xIn_1–xSb compositions with allowance for scattering in the alloy. A three-valley model for the band structure is used. A study has been made of the effects of scattering in the alloy and at ionized impurities on the V_dr(E) dependence. It is shown that scattering in the alloy in some cases can increase the ratio of the threshold and saturation drift velocities. An ionized impurity increases the saturation velocity. The reasons for these effects are discussed. The optimum composition from the viewpoint of using the Gunn effect is Ga_0.6In_0.4Sb, and the characteristics of these are substantially better than that of GaAs.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 10–15, September 1981.     

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

In this paper, the normally-off N-channel lateral 4H–Si C metal–oxide–semiconductor field-effect transistors(MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–Si C/SiO_2 were examined by the measurement of HF I–V, G–V, and C–V over a range of frequencies. The ideal C–V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–Si C was reduced to 2 × 10~(11) e V~(-1)·cm~(-2), the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak fieldeffect mobility is about 32.5 cm~2·V~(-1)·s~(-1), and the maximum peak field-effect mobility of 38 cm~2·V~(-1)·s~(-1) was achieved in fabricated lateral 4H–Si C MOSFFETs.     

Superlattice vertical transport with high-lying minibands

We examine the role of high-lying minibands in superlattice vertical transport using a nonparabolic balance-equation approach. We find that the inclusion of high-lying minibands results in a decrease of the electron temperature, a reduction of the peak drift velocity and a slow-down of the velocity-drop rate in the negative differential mobility (NDM) regime, in comparison with those predicted by a single miniband model. These effects become significant when the strength of the electric field gets close to or falls in the NDM regime.     

负径向电场对荷电粒子运动的影响及其数值模拟

从负径向电场产生的电漂移改变荷电粒子运动的极向运动速度着手,推导出在负径向电场存在时安全因子的表达式,分析了安全因子对荷电粒子漂移位移和运动轨迹的影响。建立了在负径向电场条件下,荷电粒子在梯度磁场和曲率磁场中运动数学模型。通过数值模拟,获得了通行粒子、香蕉粒子的漂移位移和运动轨迹所呈现出的新特点和规律:负径向电场改变了荷电粒子的最大漂移位移。当荷电粒子的极向运动速度增加时,最大漂移位移减小,反之增大;改变了荷电粒子的运动轨迹,通行粒子的轨亦可能变为香蕉粒子的轨迹,香蕉粒子的轨迹可能变为通行粒子的轨迹,当电场达到足够的强度时,均成为在极向上顺时针运动的通行粒子轨迹。