Copper and Graphene activated ZnO nanopowders for enhanced photocatalytic and antibacterial activities

ZnO, ZnO:Cu and ZnO:Cu:Graphene nanopowders were synthesized via a facile wet chemical method. The XRD studies show that the synthesized samples have hexagonal wurtzite structure. It is found that graphene addition induces a decrease in crystallite size. UV–vis absorption spectra of the samples show sharp absorption edges around 380 nm. Photoluminescence studies reveal that the incorporation of copper and graphene in ZnO facilitates the efficient photo generated electron–hole pair separation. It is found that the ZnO:Cu and ZnO:Cu:Graphene nanopowder exhibit improved photocatalytic efficiency for the photodegradation of Methylene Blue (MB) under visible light irradiation. Moreover, improved antibacterial activity of ZnO:Cu:Graphene nanopowder against Escherichia coli and Staphylococcus aureus bacteria is observed.     

Random deflection of the white light beam during self-focusing and filamentation of a femtosecond laser pulse in water

Ti:sapphire femtosecond laser pulse filamentation in competition with optical breakdown in condensed matter is studied both experimentally and numerically using water as an example. Strong random deflection and modulation of the supercontinuum under tight focusing conditions were observed. They manifest the beginning of the filamentation process near the highly disordered plasma created by optical breakdown at the geometrical focus. Received: 13 June 2002 / Revised version: 16 August 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-418/656-2623, E-mail: wliu@phy.ulaval.ca     

Photoluminescence of crystalline and disordered BTO:Mn powder: Experimental and theoretical modeling

Disordered and crystalline Mn-doped BaTiO₃ (BTO:Mn) powders were synthesized by the polymeric precursor method. After heat treatment, the nature of visible photoluminescence (PL) at room temperature in amorphous BTO:Mn was discussed, considering results of experimental and theoretical studies. X-ray diffraction (XRD), PL, and UV-vis were used to characterize this material. Rietveld refinement of the BTO:Mn from XRD data was used to built two models, which represent the crystalline BTO:Mn (BTO:Mn_c) and disordered BTO:Mn (BTO:Mn_d) structures. Theses models were analyzed by the periodic ab initio quantum mechanical calculations using the CRYSTAL98 package within the framework of density functional theory at the B3LYP level. The experimental and theoretical results indicated that PL is related with the degree of disorder in the BTO:Mn powders and also suggests the presence of localized states in the disordered structure.     

Effective barrier height and work function of Mg:Ag thin films with a low Mg concentration acting as cathodes in high-efficiency organic light emitting devices

Organic molecular-beam deposition (OMBD) of Mg:Ag thin films with a low Mg concentration on tris(8-hydroxyquinolino) aluminum (Alq₃) layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the Mg:Ag (5:95) thin films grown on the Alq₃ layers, determined from the current-voltage measurements, was as low as 0.22 eV. The work function of the Mg:Ag (5:95) thin film, determined from the secondary electron emission coefficients obtained by using focused ion beam, was 4.12 eV. These results indicate that Mg:Ag (5:95) thin films with a low Mg concentration grown by using the OMBD method hold promise for potential applications as cathode electrodes in high-efficiency OLEDs.     

Growth and optical properties of In:Nd:LiNbO3 crystals

In, Nd double-doped LiNbO₃ (LN) crystals have been grown for the first time. Their infrared (IR) transmission spectra were measured and discussed to investigate their structure and defects. The optical damage resistance of Nd:In:LiNbO₃ crystals were characterized by straightly observing transmission facula distortion method. The optical damage resistance of In (4.0 mol%):Nd:LiNbO₃ was much higher than that of Nd:LiNbO₃. The defects were discussed in this paper to explain the optical damage resistance in the In:Nd:LiNbO₃ crystals.     

Temperature dependence of the InP(001) bulk and surface dielectric function

Received: 14 July 1997/Accepted: 14 July 1997     

High-efficiency clean EUV plasma source at 10–30 nm, driven by a long-pulse-width excimer laser

A long-pulse-width high-output energy (120 ns FWHM, 7 J) XeCl laser has been focused on thin tape targets (Cu and Ta) to generate more than 100-ns-long (FWHM) EUV pulses in the 10–30 nm spectral region, suitable for projection microlithography. The conversion efficiency was more than 20% over a 2π solid angle. We observed debris emission using a gated CCD camera, and measured the debris speed for different irradiation conditions. We found irradiation conditions such that the measured velocities were low enough that simple mechanical devices combined with krypton at low-pressure could efficiently stop both ionic debris and cluster debris. Our results show that a suitable combination of driving-laser characteristics, target material and thickness, environment gas and mechanical choppers can make clean and increase the power of EUV solid-target laser-plasma sources. Received: 21 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +39-06/9400-5334, E-mail: bollanti@frascati.enea.it     

Spectroscopic process sensors in MOVPE device production

Received: 21 October 1998 / Accepted: 23 October 1998     

Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured thin-film EL device

Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured (NS) thin-film electroluminescent (TFEL) device of which emission layer is a multilayer composed with ZnS:Mn layers and 0.7-nm-thick AlN interlayers were studied. The bandgap widening and the increased PL efficiency of Mn²⁺ 3d-3d transitions with a decrease in the ZnS:Mn single-layer thickness down to 5 nm were observed, which is ascribed to quantum confinement effects. Meanwhile, the multilayer with 2-nm-thick ZnS:Mn single-layers shows a drop of PL efficiency, indicating the presence of defective region just on AlN. The tendency of the luminous efficiency of the NS-TFEL device against the ZnS:Mn single-layer thickness is similar to the tendency found in the PL efficiency, indicating the importance of the ZnS:Mn/AlN interface for the device performance.     

Novel technique for the measurement of fiber dispersion properties

We present a novel method for measuring the linear and nonlinear dispersion properties of conventional and micro-structured fibers. It is based on the automated compensation of phase modulations using a high-resolution pulse-shaping device. No tunable laser source is required. Received: 20 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-3641/947202, E-mail: stobrawa@ioq.uni-jena.de RID="**" ID="**"Present address: Carl Zeiss Meditec AG, G?schwitzer Strasse 51–52, 07745 Jena, Germany     

Gamma-ray irradiation effect on the absorption and luminescence spectra of Nd:GGG and Nd:GSGG laser crystals

Laser crystals Nd³⁺:Gd₃Ga₅O₁₂ (Nd:GGG) and Nd³⁺:Gd₃Sc₂Ga₃O₁₂ (Nd:GSGG) were grown by Czochralski method. The influence of gamma-ray irradiation on their absorption and luminescence spectra has been investigated. Two additional absorption (AA) bands induced by gamma-ray irradiation appear in the spectra of Nd:GGG crystal while only a very weak AA band appears for the Nd:GSGG crystal. This indicated that Nd:GSGG crystal has stronger ability to resist the color center formation by irradiation. The intensity of the excitation and emission spectra of Nd:GGG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, a luminescence strengthening effect was observed in Nd:GSGG crystal after exposure to the same irradiation dose. The results showed that the Nd:GSGG crystal is a promising candidate used under radiation environments such as in outer space.     

Diode-pumped ultra-short-pulse solid-state lasers

Many materials are good candidates for diode-pumped ultra-short-pulse lasers: several transition-metal-ion-doped crystals can or could support extremely short fs pulses. This goal, so far, has only been reached by Cr³⁺:LiSAF, but there are good chances for other crystals like Cr⁴⁺:YAG having its bandwidth within the third communication window, and the high-yield Cr²⁺:ZnSe with its impressive bandwidth in the near IR. Rare-earth-ion-doped media deliver only sub-ps pulses but allow unprecedented and scalable high average powers, like a SESAM mode-locked Yb:YAG thin-disk laser described recently. In all ranges of pulse durations there are fascinating applications ready for widespread employment as soon as compact, reliable and moderately priced ultra-short-pulse systems will be available for the non-laser-skilled user. The highest impact in the near future is attributed to microstructuring of materials and processing of biological samples, including dental enamel, by ps and sub-ps pulses, and optical coherence tomography needing pulses in the 10-fs regime at very modest average powers. Received: 29 June 2000 / Published online: 6 December 2000     

Wetting and scanning force microscopy on rough polymer surfaces: Wenzel’s roughness factor and the thermodynamic contact angle

The influence of the surface roughness of polypropylene on the contact angle hysteresis is investigated by means of ethylene glycol drops in order to estimate the true Young’s equilibrium contact angle. A new relationship between the contact angle hysteresis and Wenzel’s contact angle is derived. In addition, the determination of Wenzel’s roughness factor by means of scanning force microscopy opens an alternative way to obtaining Young’s equilibrium contact angle without any surface manipulation. The experimental results presented verify this new approach. Received: 2 September 2002 / Accepted: 2 September 2002 / Published online: 5 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-3328/352-452, E-mail: helmut.kamusewitz@gkss.de     

Behaviour of discontinuous gold films on SrTiO3 substrates under annealing

Morphological changes of thin, discontinuous gold films on SrTiO₃ substrates, resulting from evaporation in the temperature range of 1143-1278 K, have been investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). If the gold covered fraction of the surface is small, the evaporation kinetics can be related to the desorption of adatoms. Measuring the density of the gold beads and the time dependence of the effective thickness of the film as calculated from the diameter of the beads, the following parameters have been determined: the surface diffusion length of the gold adatoms, , the mass transfer surface diffusion coefficient, and the evaporation flux, .     

Possible explanation of the difference in nuclear fission induced by the intermediate energy protons and neutrons

A possible explanation is given of the experimentally observed differences between the the fission cross-sections in the reactions induced by the intermediate energy (hundreds MeV) neutrons and protons. Received: 13 June 2000 / Accepted: 6 July 2000     

Reverse Monte Carlo simulations and Raman scattering of an amorphous GeSe4 alloy produced by mechanical alloying

The short and intermediate range order of an amorphous GeSe₄ alloy produced by Mechanical Alloying were studied by Reverse Monte Carlo simulations of its X-ray total structure factor and Raman scattering. The simulations were used to compute the , and partial distribution functions and the , and partial structure factors. We calculated the coordination numbers and interatomic distances for the first and second neighbors. The data obtained indicate that the structure of the alloy has important differences when compared to alloys prepared by other techniques. There are a high number of Se-Se pairs in the first shell, and some of the tetrahedral units formed seemed to be connected by Se-Se bridges.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

p‐type conducting ZnO:P microwires prepared by direct carbothermal growth

Phosphorous‐doped (ZnO:P) and undoped ZnO wires with diameter of several micrometers and length of several hundred micrometers were thermally grown directly on phosphorus pentoxide doped and undoped ZnO:graphite targets, respectively. The cathodoluminescence spectra of single ZnO:P microwires show three typical acceptor‐related emissions which are attributed to (A⁰, X), (e, A⁰), and DAP. Three‐terminal, gate voltage dependent electrical measurements of back‐gate field effect transistors with the microwires as channels indicate reproducibly that undoped ZnO and ZnO:P microwires are n‐type and p‐type conductive, respectively. The p‐type conductivity was found to be stable over more than six months. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density . The experimental values of β, τ, and are compared with those calculated based on our model of light-induced defect creation in a-Si:H.     

Quality assurance in nano-scale analysis

Some methods of nano-scale analysis are on the threshold of being a standard method in industry and therefore quality assurance becomes important. But, at the present time, there are deficits in standardisation and validation of these methods. Therefore, we have organised method comparisons and interlaboratory comparisons to overcome these deficits. We report the results of an interlaboratory comparison in step-height determination by atomic force microscopy and the development of a reference material for laterally resolving methods of material analysis. Received: 2 September 2002 / Accepted: 2 September 2002 / Published online: 5 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-30/8104-1827, E-mail: mathias.senoner@bam.de