Gd3(Al,Ga)5O12:Ce闪烁晶体缺陷对其发光性能的影响

新型闪烁晶体Gd₃(Al,Ga)₅O₁₂:Ce(GAGG:Ce)在制备过程中易出现包裹体及反格位缺陷等问题,严重影响晶体的性能.为了抑制这些缺陷以得到大尺寸高质量的GAGG:Ce晶体,本文以Gd₃(Al,Ga)₅O₁₂为基质、Ce3+为掺杂离子,采用提拉法生长得到了GAGG:Ce晶体,并对不同晶体部位的物相结构、微区成分、透光性质、发光及时间性能进行了测试和对比分析.结果表明,GAGG:Ce晶体的透过谱中存在340和440 nm两处Ce³⁺特征吸收带,且位于550 nm处的直线透过率为82%.晶体尾部因杂相包裹体等宏观缺陷的影响,导致其透过率下降至70%左右.微区成分分析进一步表明GAGG:Ce晶体中存在三种类型的包裹体,分别为富Gd相、富Ce相及(Al,Ga)₂O₃相.GAGG:Ce晶体的X射线激发发射谱中在550 nm附近存在Ce³⁺宽发射带,且380 nm处还存在GdAl/Ga反格位缺陷引起的发射.晶体中存在的杂相包裹体及GdAl/Ga反格位缺陷等因素导致Ce³⁺在GAGG基质的发光强度下降12.5%;GdAl/Ga反格位离子与近邻Ce的隧穿效应使得GAGG:Ce晶体的衰减时间由117.7 ns延长至121.9 ns,且慢分量比例由16%增加至17.2%.     

On-line induced absorption measurement on PbWO4, YAlO3:Ce and CsI scintillating crystals

On-line measured radiation-induced absorption spectra and their kinetics are presented for the doped PbWO₄, YAlO₃:Ce and CsI crystals. In the doubly doped PbWO₄:Mo,Y crystals the saturation level of the induced absorption increased with Mo concentration up to 2750 ppm. With a higher concentration it again gradually decreased. Yttrium co-doping around 100 ppm improved considerably the radiation hardness of Mo-doped PbWO₄. Characteristic recovery time of these crystals was about 30 min. Positive influence of Zr⁺⁴ co-doping on characteristics of a set of YAlO₃:Ce samples resulted in decrease in the induced absorption intensity. The presence of very slow recovery processes was in good agreement with thermoluminescence characteristics above room temperature reported earlier. An absorption band round 420 nm appeared in as-grown CsI crystals doped with Tl, and was related to the oxygen contamination.     

Ce:YAG晶体和透明陶瓷的光学和闪烁性能

采用温梯法生长了Ce:YAG晶体和真空烧结法制备了Ce:YAG透明陶瓷,并对晶体和透明陶瓷的光学和闪烁性能进行了对比研究.Ce:YAG晶体和陶瓷都具有位于230,340和460 nm波段的Ce³⁺离子的特征吸收带和540 nm附近的发射峰,但Ce:YAG晶体同时存在296和370 nm的色心吸收,其发射峰位于398 nm,而透明陶瓷中不存在.Ce:YAG晶体和陶瓷的X射线荧光中均存在520 nm附近的Ce³⁺离子发射,但晶体中还存在由反格位缺陷引起的300 nm 关键词： Ce:YAG 闪烁晶体 透明陶瓷     

LaPO4:Ce3+/Tb3+ 纳米线的合成和发光特性

通过水热法合成出Ce^3 和Tb^3 共激活的LaPO4纳米线,并同相应的微米棒进行了比较。研究了其荧光光谱和动力学过程。结果表明纳米线和微米棒的晶体结构均为单斜相。在单掺杂Ce^3 和Tb^3 的材料中,微米棒的发光强度与纳米线相比稍有提高,但在共掺杂的纳米线样品中对应Ce^3 的激发,Tb^3 的^5D4→^7F5绿光发射比微米棒提高了3～5倍。通过动力学研究,纳米线中Ce^3 和Tb^3 的电子跃迁速率与微米棒对比没有显著的提高,且Ce^3 →Tb^3 的能量传递速率降低了3倍。Tb^3 的^53能级衰减包括两个过程：快过程和慢过程。纳米线以慢过程为主,而微米棒以快过程为主。我们认为慢过程对应^5D3→^5D4的弛豫,快过程对应^5D3向其他缺陷能级的跃迁。因此共掺杂纳米线中强度的提高被归因于在纳米线中更多的边界阻碍而引起在高于^5D4的激发态能级上损失的能量更少。     

Preparation and properties of GAGG:Ce/glass composite scintillation material

The translucent GGAG:Ce/glass composites are prepared successfully by ball-milling, tableting, and pressureless sintering. The thickness of composites is about 400 μm. The x-ray diffraction(XRD), differential scanning calorimetry(DSC), density of composite materials are measured and discussed systematically. The scanning electron microscopy(SEM) and energy dispersive spectrometer(EDS) elemental mapping are employed to analyze the particle size, the shape of powders, and the distribution of GGAG:Ce particles in the glass matrix, respectively. The decay time, ultraviolet,(UV),x-ray excitation luminescence spectra, and temperature spectra are studied. The results show that the composite materials have high light output, good thermostability, and short decay time. The method adopted in this work is an effective method to reduce the preparation time and cost of the sample. The ultralow afterglow indicates that the composite materials have an opportunity to be used for x-ray detection and imaging.     

Temperature dependence of the luminescence properties of LaCl3：Ce crystal

The optical properties of LaCl3：Ce crystal are reported in this paper. Optical transmission spectrum, photoluminescence and time resolved photoluminescence spectra at different temperatures are investigated. It is found that optical transmittance is as high as 80% between 320 nm and 600 nm, and no obvious absorption band is found in this region. Emission intensity and decay time of photoluminescence are quite stable with the change of the temperature between 80 K and 500 K. No thermal quenching is present up to 500 K, and decay time keeps at 17±2 ns. With the increase of the temperature, the whole emission bands and excitation bands present broadening and overlapping, leading to the strengthening of re-absorption of the Ce^3＋ emission, which makes the emission spectra have a red shift trend.     

三元系SrGa2S4：Ce蓝色发光材料

制备了可用于蓝色TFEL的粉末发光材料SrGa2S4:Ce,并对其晶体结构进行了X射线衍射分析,测量并研究了其激发光谱和发射光谱,同时研究了Ce3+浓度的变化对SrGa2S4:Ce的激发光谱、发射光谱、色纯度及发光强度的影响,结果表明SrGa2S4:Ce可发射纯蓝色光,色纯度极佳,实现其高效率的、纯蓝色发射的最佳Ce3+浓度为3～4mol%。     

YAG：Ce发光材料合成的助熔剂研究

采用高温固相法合成YAG:Ce荧光粉时,传统的以硼酸为助熔剂的产物硬度很大,处理过程中容易破坏晶体形貌,影响发光性能.采用氟化物助熔剂(MgF₂、CaF₂、SrF₂、BaF₂、AlF₃)及它们与H₃BO₃混合助熔剂来制备YAG:Ce,研究了助熔剂种类及其浓度对制得的粉体发光性能的影响,比较了它们的晶体形貌与物相组成.结果表明,采用不同助熔剂合成的YAG:Ce的激发光谱及发射光谱基本相同,而BaF₂、AlF₃、SrF₂及它们与H₃BO₃的混合助熔剂系列,可在一定程度上降低产品硬度、提高产品发光亮度;其中H₃BO₃~SrF₂系列、H₃BO₃~BaF₂系列的晶化程度与粒度分布均有改善;H₃BO₃~BaF₂系列的物相组成比较纯,除Y₃Al₅O₁₂主相外基本无杂相.     

闪烁光纤发光时间特性的测量

文中介绍了闪烁光纤发光时间常数的测量方法及测量系统本身时间分辨的校正方法,并对两种塑料闪烁光纤的时间特性进行了测量.     

Ce~(3+)和Tb~(3+)掺杂钆-钡-硅酸盐闪烁玻璃的发光性能

采用高温熔融法制备Ce~(3+)或Tb~(3+)单掺和Ce~(3+)/Tb~(3+)共掺钆-钡-硅酸盐闪烁玻璃。通过透射光谱、光致激发和发射光谱、X射线激发发射光谱及荧光衰减曲线等手段对其发光性能进行研究。实验结果表明:在紫外光的激发下,Tb~(3+)掺杂闪烁玻璃发出明亮的绿光(544 nm),而Ce~(3+)掺杂闪烁玻璃发出蓝紫光。对于Ce~(3+)/Tb~(3+)共掺闪烁玻璃,在紫外光和X射线激发下均观察到Ce~(3+)离子敏化Tb~(3+)离子发光的现象,这是由于存在Ce~(3+)→Tb~(3+)的能量转移。Ce~(3+)/Tb~(3+)共掺闪烁玻璃的最佳Ce2O3掺杂摩尔分数为0.2%,此时Ce~(3+)离子向Tb~(3+)离子的能量传递效率为45.7%。在X射线激发下,Ce_2O_3摩尔分数为0.2%的Ce~(3+)/Tb~(3+)共掺闪烁玻璃在544 nm处的发光强度是Bi_4Ge_3O_(12)(BGO)闪烁晶体在500 nm处发光强度的4.2倍,积分闪烁效率达到BGO晶体的55.6%,这有利于在高分辨率医学成像中降低辐射剂量。     

Anisotropic Scattering in BaTiO_3: Ce Single Crystal

InPastdecadesseveralformsoflight-inducedscatteringhavebeenobservedfromBaTiossinglecrystali1luminatedbyalinear,polarizedlaserbeam[1~7j.Ingeneral,thescattteringPatterncanbeisotropicoranisotropicdependingonthepropagationdirectionofthelightbomrelativetothecrystallographicaxesandthebeampolarization,itiscom-monlyacceptedthatthephysicaloriginofthisphenomenonistherandomrecordingofParasiticgratingswrittenbyanincidentbeamanditsscatteredbeamfromcrystalinhomo-geneities[1J.Recently,anewtyPeofnonlinearopt…     

Ce:BaTiO3晶体中两个深陷阱能级引起的光折变光栅暗衰减特性

对Ce:BaTiO3晶体中光折变光栅的暗衰减特性进行了实验研究，观测到了晶体禁带中的Fe离子和Ce离子两个深陷阱能级同时参与了光折变过程。在单深能级模型和浅－深能级模型的基础上，提出了简化的双深能级模型，并根据该模型定量地分析了Fe离子和Ce离子每个深陷阱能级在不同光栅波矢、不同光栅写入光强时对总空间电场以及光折变光栅的贡献。     

闪烁光纤特性测试

介绍了一套进行单根塑料闪烁光纤测量的实验装置,给出由这套装置获得闪烁光纤的光产额、衰减长度、时间分辨和位置分辨的实验方法和测量结果,并对两种不同厂家的光纤进行了比较.     

Ce3+基态在正交晶场影响下分裂的理论计算

基于晶场理论,通过模拟三种相同晶系化合物CePdGa3、Ce3Ag4Ge4和Ce3Ag4Sn4的磁化率倒数-温度曲线,得到了晶场分裂能和相应波函数,并从理论上分析了晶场效应对稀土离子基态的影响.计算表明:Kramers离子Ce3 在正交晶场的作用下,基态六重简并部分消除得到三个双态.     

Synthesis and luminescent properties of LuAG : Ce3+ transparent ceramics by solvo-thermal method

The precursor powders of LuAG∶Ce3+ transparent ceramics were synthesized by solvo-thermal method.The crystal structure and morphology of powders were analyzed by means of Fourier transform infra-red spectroscopy,X-ray diffraction and scanning electron microscopy.The precursor powders were sintered into transparent ceramics in vacuum and then in nitrogen without any additive.The surface morphology of the transparent unpolished ceramics was characterized using scanning electron microscopy.Some factors that af...     

Ce：Fe：LiNbO3晶体光衍射效应的研究

减小Ｃｅ：Ｆｅ：ＬｉＮｂＯ３晶片的厚度，扩大泵浦光束直径，时由光爬行应晶体产生衍射自增强。单光束辐照Ｃｅ：Ｆｅ：ＬｉＮｂＯ３晶体时，出现变偏振现象等各向异性自衍射。本文对上述现象的形成机理进行了探讨。     

Luminescence properties of Ce3+ doped gadolinium-calcium-silicaborate glass scintillator

In this work, the Ce³⁺ doped gadolinium-calcium-silicaborate glass scintillators of the composition ratio 25Gd₂O₃:10CaO:10SiO₂:(55−x)B₂O₃:xCeF₃, have been fabricated by using the melt-quenching technique. The doping concentration of the Ce³⁺ was varied from 0.05 mol% to 2.5 mol%. The 4f-5d transition of the Ce³⁺ allowed scintillation with a fast decay time. The absorption spectrum, X-ray induced emission spectrum, photo luminescence spectrum, laser luminescence spectrum and decay time of the scintillators were measured for studying the luminescence properties. From the X-ray induced emission spectrum result, we checked the trend between doping concentration and light yield. The laser induced luminescence spectrum was measured while changing the temperature from 300 K to 10 K. We also measured the decay time by using the laser excitation of the 0.15 mol% Ce³⁺ doped glass scintillator.     

Ce3+在LiBaBO3中的发光特性及晶体学格位

采用固相法制备了LiBaBO3:Ce3+发光材料.测得LiBaBO3:Ce3+材料的发射光谱为一不对称的单峰宽谱,主峰位于440 nm;监测440 nm发射峰,可得其激发光谱为一主峰位于370 nm的宽谱.利用van Uitert公式计算了Ce3+取代LiBaBO3中Ba2+时所占晶体学格位,得出438 nm发射带归属于九配位的Ce3+发射,而469 nm发射带起源于八配位的Ce3+发射.研究了Ce3+浓度对LiBaBO3:Ce3+材料发光强度的影响,结果显示,随Ce3+浓度的增大,发光强度呈现先增大后减小的趋势,Ce3+浓度为3mol%时强度最大,造成其浓度猝灭的原因为电偶极-偶极相互作用.引入Li+,Na+或K+可增强LiBaBO3:Ce3+材料的发射强度.利用InGaN管芯(370 nm)激发LiBaBO3:Ce3+材料,获得了很好的蓝白光发射,色坐标为(x=0.291,y=0.297).     

12CaO·7Al_2O_3∶Ce~(3+)透明陶瓷的制备及其闪烁特性研究

采用高温固相法制备了不同Ce3+掺杂浓度的12Ca O·7Al2O3(C12A7∶x%Ce3+)陶瓷样品。在350 nm紫外光激发下,样品的发射光谱呈现为主峰位于440 nm的宽带,来源于Ce3+的5d1→2F5/2和2F7/2的辐射跃迁。随着Ce3+掺杂浓度的增加,发射强度增大;当Ce3+摩尔分数超过0.7%时,有杂质相出现。为了进一步提高光致发光强度,采用自蔓延燃烧法合成了C12A7∶0.5%Ce3+陶瓷样品。在H2气氛下热处理,通过改变笼中阴离子基团的种类和数目提高了陶瓷闪烁特性(发光强度和衰减时间)。结果表明,C12A7∶Ce3+陶瓷是可应用于闪烁体的潜在材料。     

Ce：Mn：LiNb_3晶体二波耦合的异常现象

Ｃｅ：Ｍｎ：ＬｉＮｂＯ３晶体的二波耦合指数增益系数随晶片厚度减小而急剧增大。增大泵浦光束直径，可使指数增益的２θ角度响应范围拓宽。温度升高时，指数增益随之增大，且在５５℃、７１℃和１１０℃附近出现异常峰值，本文对上述现象进行了分析研究。