Graded index broadband antireflection coating prepared by glancing angle deposition for a high-power laser system

This paper reports that SiO₂ is selected to fabricate broadband antireflection (AR) coatings on fused silica substrate by using glancing angle deposition and physical vapour deposition. Through accurate control of the graded index of the SiO₂ layer, transmittance of the graded broadband AR coating can achieve an average value of 98% across a spectral range of 300--1850~nm. Moreover, a laser-induced damage threshold measurement of the fabricated AR coating is performed by using a one-on-one protocol according to ISO11254-1, resulting in an average damage threshold of 17.2~J/cm$^{2}$.     

Cost-effective double-layer antireflection coatings in mid-wavelength infrared band

In this letter, design and preparation of cost-effective double-layer antireflection (AR) coatings in mid-wavelength infrared band is investigated. The method of vector graphics which is simple and visualized for coatings designs with only a few layers is applied to design narrow-band double-layer AR coatings with high performance and low cost for laser applications. The experiment result verifies the design very well with peak transmittance very close to the theoretical limit.     

Plasmon based antireflection coatings containing nanostructured Ag and silica medium

The transmittance and scattering of the antireflection (AR) coatings based on nanostructured Ag and silica medium were enhanced by the exploitation of the localized surface plasmon resonance (LSPR). The transmittance and scattering values of AR coatings are relative to the annealing temperature, Ag concentration and thickness of AR coatings. The transmittance values of 95.7% and 97.2% of AR coatings with 0.10 wt.% Ag and annealed at 400 °C were obtained in the visible wavelength for a single-side and double-side coated glass slides, respectively. The enhanced transmittance and scattering of the AR coatings are primarily attributable to the large forward scattering of nanostructured Ag and the lesser refractive indices of Ag/SiO₂ coatings.     

Fabrication of broadband antireflection coatings using broadband optical monitoring mixed with time monitoring

Multi-layer optical coatings with complex spectrum requirements, such as multi-band pass filters, notch filters, and ultra-broadband antireflection coating, which usually contain very thin layers and sensitive layers, are difficult to be fabricated using a quartz crystal monitoring method or a single wavelength optical monitoring system(SWLOMS). In this paper, a broadband antireflection(AR) coating applied in the wavelength range from 800 nm to 1800 nm was designed and deposited by ion beam sputtering(IBS). Ta_2O_5 and Si O_2 were chosen as high and low refractive index coating materials,respectively. The optimized coating structure contains 9 non-quarter-wave(QW) layers totally with ultra-thin layers and sensitive layers in this coating stack. In order to obtain high transmittance, it is very important to realize the thickness accurate control on these thin layers and sensitive layers. A broadband optical monitoring mixed with time monitoring strategy was successfully used to control the layer thickness during the deposition process. At last, the measured transmittance of AR coating is quite close to the theoretical value. A 0.6% variation in short wavelength edge across the central 180 mm diameter is demonstrated. A spectrum shift of less than 0.5% for 2 continuous runs is also presented.     

薄膜非均匀性及其对增透膜性能的影响

基于非均匀膜理论提出的折射率分层模型,将非均匀膜层分为N个均匀子层,应用光学薄膜特征矩阵对其进行理论分析。应用膜系设计软件模拟ZrO2和CeO2的负非均匀性对增透膜光谱特性的影响。研究结果表明:负非均匀性使多层增透膜的反射率增大,在参考波长处的光谱特性变差,使整个反射光谱曲线朝长波方向漂移,从而导致整个膜系的光谱特性偏离理想情形。     

Design and fabrication of ultra broadband infrared antireflection hard coatings on ZnSe in the range from 2 to 16 μm

In conventional infrared multilayer antireflection coatings (MLAR) materials of fluoride and chalcogenide types are used, which are disadvantaged due to their low mechanical strength and poor stability against humidity and environmental impacts. In this paper, we show that high performance ultra broadband and hard infrared multilayer antireflection coatings on ZnSe substrates in the wavelength range from 2 to 16 μm can be designed and fabricated. Diamond-like carbon (DLC) hard coating as a mechanical and environmental protection layer was proposed and deposited onto MLAR surfaces (MLAR + DLC) using a pulsed vacuum arc ion deposition technique. The thickness of the high optical quality DLC can be optimized in the design simulation to achieve a practically best antireflection and surface protection performance. We show that a germanium thin film (15 nm) between the MLAR and DLC surfaces can be used as a transition layer for optical and material match. The average transmission of the fabricated MLAR+DLC surfaces was 93.1% in the wavelength range between 2 and 16 μm. The peak transmission was about 97.6%, close to the simulated values. The durability and stability against mechanical impacts and environmental tests was improved significantly compared with the conventional infrared windows.     

Design of wideband graded-index antireflection coatings at oblique light incidence

We suggest a design method of graded-refractive-index (GRIN) antireflection (AR) coating for s-polarized or p-polarized light at off-normal incidence. The spectrum characteristic of the designed antireflection coating with a quintic effective refractive-index profile for a given state of polarization has been discussed. In addition, the genetic algorithm was used to optimize the refractive index profile of the GRIN antireflection for reducing the mean reflectance of s- and p-polarizations. The average reflectance loss was reduced to only 0.04% by applying optimized GRIN AR coatings onto BK7 glass over the wavelength range from 400 to 800 nm at the incident angle of θ₀ =70°.     

基于聚酰亚胺基底的太赫兹滤波器

超材料是通过人工方式做成的具有特殊电磁特性的亚波长周期性金属结构,通过合理的设计样品结构,可以实现自然界中传统材料无法实现的电磁现象。超材料可以广泛用于电磁隐身、完美吸收、负折射率等研究领域,近些年,随着太赫兹技术的发展,太赫兹超材料器件被广泛研究。由于硅（Si）对于太赫兹波的透过率较高,通常选取Si作为基底材料。但Si硬度较高、不易弯曲且易碎等缺点限制了THz超材料的应用。聚合物材料聚酰亚胺具有柔性,作为基底,克服了传统硅基底的缺点,透过率可以与Si匹敌,而且其表面光滑,适合传统光刻技术加工。对聚酰亚胺在太赫兹波段光学性质的测试结果表明,此种材料的折射率在1.9左右,透过率达到80%以上。设计了一种双开口谐振环结构,研究了其太赫兹波透射性质以及随太赫兹波的入射角度和样品曲率的变化规律,发现透射峰强度和峰位均不发生改变。此结果展示了将平面滤波延伸到曲面滤波领域的可能性,若将聚酰亚胺基底做薄,为今后太赫兹频段隐身衣的研究提供基础。将不同结构的两种样品叠加在一起制成宽谱滤波器, 50%的带宽达到181 GHz。此种宽带滤波器制作简单,滤波效果显著,为太赫兹波段宽带滤波器的制作提供一种新思路。     

ECRCVD技术淀积太阳电池的减反膜

本文报道了用电子回旋共振化学气相淀积(ECRCVD)技术实现了低温(50℃)淀积SiON/SiN膜作硅太阳电池减反射膜的实验研究.探讨了影响薄膜性能的主要工艺参数,设计了具有较佳抗反效果的双层减反膜,并对膜层的反射率和太阳电池参数进行了测定.结果表明:该减反膜具有良好的减反效果,能实现较宽波段范围内的均匀增透,使太阳电池短路电流密度提高了42%,电池转换效率提高了45%.     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.     

Sol-gel preparation and characterization of nanoporous ZnO/SiO2 coatings with broadband antireflection properties

Nanoporous ZnO/SiO₂ bilayer coatings were prepared on the surface of glass substrates via sol-gel dip-coating process. The structural, morphological and optical properties of the coatings were characterized. The refractive indices of ZnO layer and SiO₂ layer are 1.34 and 1.21 at 550 nm, respectively. The transmittance and reflectance spectra of the coatings were investigated and the broadband antireflection performance of the bilayer structure was determined over the solar spectrum. The solar transmittances in the range of 300-1200 nm and 1200-2500 nm are increased by 6.5% and 6.2%, respectively. The improvement of transmittance is attributed to the destructive interference of light reflected from interfaces between the different refractive-index layers with an optimized thickness. Such antireflection coatings of ZnO/SiO₂ provide a promising route for solar energy applications.     

Real‐Time and Broadband Terahertz Wave Scattering Manipulation via Polarization‐Insensitive Conformal Graphene‐Based Coding Metasurfaces

Here, for the first time, the real‐time and broadband manipulation of terahertz (THz) waves are acquired by introducing a multifunctional graphene‐based coding metasurface (GBCM). The designed structure consists of subwavelength patterned graphene units whose operational statuses can be dynamically switched between two digital states of “0” and “1”. By engineering the spatial distribution of chemical potentials across the GBCM, various scattering patterns having single, two, four, and numerous reflection beams are elaborately achieved just within one planar structure. To compute the far‐field pattern of GBCM, an inverse discrete Fourier transform (IDFT) is established, providing a fast and efficient design method. The proposed GBCM provides a low reflection bellow ?10 dB over a broad frequency band ranging from 1 THz to 1.9 THz. In addition, the metasurface retains its low reflection behavior in a wide range of incident wave angles for both TE and TM polarizations. According to conformal invariance of graphene sheets, the stealth property of GBCM is well preserved while wrapping around a curved object. The proposed technique of real‐time scattering manipulation leads to multifunctional THz devices, opening new routes contributing to numerous applications such as imaging and stealth technology.     

SiO2内保护层对LiB3O5晶体倍频增透膜损伤阈值的影响

 利用离子辅助电子束沉积方法在LiB₃O₅基底上镀制了不加SiO₂内保护层和加SiO₂内保护层的倍频增透膜，测量了两类薄膜在波长1 064 nm多脉冲辐照下的激光损伤阈值，获得了两种不同的损伤形貌，并对损伤原因作了初步探讨。实验结果表明：保护层的加入把由基底膜层界面缺陷吸收所决定的阈值改变到由HfO₂膜层内缺陷吸收所决定的阈值，显著提高了倍频增透膜的抗激光损伤能力。     

Biomimetic subwavelength antireflective gratings on GaAs

We have developed a simple and scalable bottom-up approach for fabricating moth-eye antireflective coatings on GaAs substrates. Monolayer, non-close-packed silica colloidal crystals are created on crystalline GaAs wafers by a spin-coating-based single-layer reduction technique. These colloidal monolayers can be used as etching masks during a BCl(3) dry-etch process to generate subwavelength-structured antireflective gratings directly on GaAs substrates. The gratings exhibit excellent broadband antireflective properties, and the specular reflection matches with the theoretical prediction using a rigorous coupled-wave analysis model. These bioinspired antireflection coatings have important technological applications ranging from efficient solar cells to IR detectors.     

Measurements and analysis of antireflection coatings reflectivity related to external cavity lasers

Facets of semiconductor optical amplifiers (SOA) designed for external cavity lasers must be coated with an antireflection (AR) film of high quality and extremely low reflectance. Therefore measurements of facet reflectance play a crucial role in the fabrication of such AR coating. The reflectance can be estimated by studying the optical power reflected from the Fabry-Perot cavity formed for that purpose by the examined SOA facet and the end of a single-mode fibre. We have made analysis of practical suitability of such measurement method. Theoretical calculations show that, for the low reflectance coatings, losses due to light coupling into optical fibre cannot be omitted in the analysis of the experimental results. To verify this conclusion a theoretical model was tested for a low reflectance surface and we have found that the relative error of the measurements supported by the theoretical model is on the order of 8%.     

A novel trilayer antireflection coating using dip-coating technique

We report a new structure for broadband antireflection coating by dip-coating technique, which has minimal cost and is compatible with large-scale manufacturing. The coatings are prepared by depositing SiO 2 sol-gel film on a glass substrate, subsequently depositing SiO 2 single-layer particle coating through electrostatic attraction, and depositing a final very thin SiO 2 sol-gel film to improve the mechanical strength of the whole coating structure. The refractive index of the structure changes gradually from the top to the substrate. The transmittance of a glass substrate has been experimentally found to be improved in the spectral range of 400 1 400 nm and in the incidence angle range from 0 to at least 45 . The mechanical strength is immensely improved because of the additional thin SiO 2 sol-gel layer. The surface texture can be applied to the substrates of different materials and shapes as an add-on coating.     

光学薄膜鲁棒设计中膜系误差灵敏度控制

提出了一种基于膜系误差灵敏度控制的鲁棒膜系设计方法,建立了鲁棒膜系设计评价函数在膜层参数误差统计分布下的解析表达式,避免统计样本数目有限性造成的样本均值与总体期望的误差,以及过大数目样本造成的长的计算时间消耗,并通过宽带增透膜、中性分光膜和线性透射率滤光片等多种薄膜的鲁棒设计实验证实了其在膜层参数误差控制上的效果。结果表明:该新型鲁棒膜系设计方法具有内在的快速算法特性,其设计膜系对镀膜中的膜厚监控误差不敏感,对于高质量薄膜的重复制备和批量成品率的提高具有实用价值。     

基于狄拉克半金属的可调谐的太赫兹宽频带纯线偏振转换器

本文基于新型材料狄拉克半金属(Dirac semimetals,DSs),设计了一款高纯度宽频带可调谐线偏振转换器,偏振转换率(PCR)超过99%的相对带宽为15.72%。在频段5.25~6.14 THz内,椭度角接近0°,偏振方位角约等于-90°。这种转换性能主要是源于顶层超表面的各向异性和局域的表面等离子体激元谐振(LSPRs)的激发。此外,通过改变费米能的大小可以使所设计的偏振转换器在不同的频带范围内实现宽频带偏振转换。最后,通过半解析的方法对偏振转换特性进行了理论分析。该设计在太赫兹通信、成像、无损检测等领域具有一定的应用价值,同时为宽频带可调谐太赫兹线偏振转换器的设计提供了新思路。     

新型空间硅太阳电池纳米减反射膜系的优化设计

结合纳米材料折射率（小于1.4）和AM0太阳光谱特性,对空间硅太阳电池的减反射膜进行了设计分析.分别设计了常规材料和纳米材料的双层、三层减反射膜,得到了最佳的膜系参数,并作出了反射率变化曲线.结果发现,采用低折射率纳米材料的三层减反射膜有着更好的减反射效果,新型纳米减反射膜系与采用常规材料的减反射膜系相比,优化后的最小加权平均反射率减小了15%（双层减反射膜）和24.5%（三层减反射膜）. 关键词： 折射率 减反射膜 纳米材料 空间硅太阳电池     

Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.