Catalysed growth of novel aluminium oxide nanorods

Micron-scale coral-like aluminium oxide structures have been generated by heating a mixture of AlB₂ and Co powders in a quartz boat at ca. 1050 °C under N₂. Upon sonication in acetone, the structures break down into elongated single-crystal aluminium oxide nanorods ranging from 20 to 200 nm in diameter and up to 5 μm in length. Single Co particles are often found attached to nanorod tips. A vapour–liquid–solid (V–L–S) mechanism appears to be responsible for the aluminium oxide nanorod growth. Received: 21 January 2003 / Accepted: 22 January 2003 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. E-mail: d.walton@sussex.ac.uk     

Growth of a textured quasicrystalline phase in Ti-Ni-Zr films prepared by pulsed laser deposition

The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by pulsed laser deposition on sapphire substrates at temperatures ranging from room temperature to 350 °C. Morphological and structural modifications have been followed by grazing-incidence and θ–2θ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analyzed by electron probe microanalysis. The in-depth variation of composition has been studied by secondary neutral mass spectroscopy. We show that pulsed laser deposition at 275 °C makes the formation of a 1-μm-thick film of Ti-Ni-Zr quasicrystalline textured nanocrystallites possible. Received: 7 June 2001 / Accepted: 18 February 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +33-3/8357-6300, E-mail: brien@mines.u-nancy.fr     

Influence of the oxidation temperature on the fabrication process of silicon dioxide aperture tips

The thermal oxidation of structured silicon surfaces was successfully used to reproducibly define apertures of approximately 100 nm in silicon dioxide tips at reduced oxidation temperatures. In this paper we theoretically investigate the oxidation process in more detail, describing the rheological behavior of silicon dioxide as a Maxwell fluid with non-linear viscosity. For this purpose numerical calculations of the oxidation process of trench-like silicon structures were performed. Contrary to former assumptions, our theoretical results indicate that oxide-growth retardation is more effective at raised oxidation temperatures. This is experimentally confirmed in the case of trench structures. The more pronounced oxide retardation at elevated temperatures is exploited to obtain apertures in silicon dioxide tips of 60 nm for oxidation temperatures of 1100 °C. Received: 8 April 2002 / Accepted: 11 April 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-561/804-4136, E-mail: oester@physik.uni-kassel.de     

Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5–7.7 J/cm². Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1–4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy. Received: 12 June 2002 / Accepted: 13 June 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. E-mail: bhopp@physx.u-szeged.hu     

Temperature and excitation wavelength dependencies of 3-pentanone absorption and fluorescence for PLIF applications

The temperature and excitation wavelength dependencies of 3-pentanone absorption and fluorescence were studied in support of planar laser-induced fluorescence (PLIF) imaging of temperature and mixture fraction in flows of practical interest. The temperature dependencies (300–875 K) of absorption and fluorescence were measured for gaseous 3-pentanoneat atmospheric pressure in a nitrogen bath gas using 248, 266, and 308 nm excitation. The results indicate that the fluorescence signal per unit mole fraction using 248 nm excitation is highly temperature-sensitive below 600 K, while the signal from 308 nm excitation is not temperature sensitive below 500 K. For quantitative measurements over a broad range of temperatures, one must choose excitation schemes carefully to balance the trade-off between measurement sensitivity and the amount of signal at the expected conditions. As an example of such a choice and to show the capabilities of ketone PLIF techniques, we include temperature and mixture fraction images of a 300–650 K heated air jet using near-simultaneous 308 and 266 nm excitation. Received: 29 May 2002 / Revised version: 5 November 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +1-650/723-1748, E-mail: jkoch@stanford.edu RID="**" ID="**"E-mail: hanson@me.stanford.edu     

Influence of storage time on laser cleaning of SiO<Subscript>2</Subscript> on Si

The influence of the ‘storage time’ τ_s on the threshold fluence φ_cl and the efficiency in dry laser cleaning is investigated. τ_s denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (τ_FWHM=28 ns). For the 1500-nm silica spheres, φ_cl was found to increase from about 65 mJ/cm² to 125 mJ/cm² for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h. Received: 12 July 2002 / Accepted: 12 July 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail:dieter.baeurle@jku.at     

Micromirror SLM for femtosecond pulse shaping in the ultraviolet

We present the application of a novel micro mirror array, which is based on a micro electro mechanical system (MEMS), as one- and two-dimensional phase-modulating spatial light modulator (SLM) for femtosecond pulse shaping in the spectral region from the deep-ultraviolet (DUV) to the near-infrared (NIR) (200–900 nm). Using such a high-resolution MEMS-SLM, we demonstrate one-dimensional pulse shaping at 400 nm, including THz-pulse train generation, chirp compensation, and phase wraps. Received: 7 April 2003 / Published online: 2 June 2003 RID="*" ID="*"Corresponding author. Fax: +49-3461/947-202, E-mail: hacker@ioq.uni-jena.de     

Oxygen diffusion barriers using a new sacrificial design concept for future high-density memory devices

We emphasize the importance of the new design concept for diffusion barriers in high-density memory capacitors. RuTiN and RuTiO films are proposed as sacrificial oxygen diffusion barriers. They showed much lower sheet resistance up to 800 °C than various barriers including binary and ternary nitrides, reported by others. The contact resistance for both the Pt/RuTiN/TiSi_x/n⁺⁺poly-plug/n⁺channel layer/Si and the Pt/RuTiO/RuTiN/TiSi_x/n⁺⁺poly-plug/n⁺channel layer/Si contact structures, the most important electrical parameter for the diffusion barrier in the bottom-electrode structure of capacitors, exhibited values as low as 5 kΩ, even after annealing up to 750 °C. When each RuTiN and TiN film is inserted as a glue layer between the bottom electrode Pt layer in the CVD–BST simple stack-type structure, the thermal stability of the RuTiN glue layer is observed to be 150 °C higher than that of the TiN glue layer. Moreover, the capacitance of the PVD–BST simple stack-type structure with a TiN glue layer initially degrades after annealing at 500 °C, and thereafter failed completely. In the case of RuTiN and the RuTiO/RuTiN glue layers, however, the capacitance continuously increased up to 550 °C. These new experimental results accommodate the introduction of the sacrificial design concept of diffusion barriers against oxygen in high-density memory capacitors. Received: 6 February 2002 / Accepted: 4 March 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +82-31/360-4545, E-mail: dongsoo.yoon@hynix.com     

Germania/ormosil hybrid materials derived at low temperature for photonic applications

We report on germania/organically modified silane (ormosil) hybrid materials produced by the sol–gel technique for photonic applications. Acid-catalyzed solutions of γ-glycidoxypropyltrimethoxysilane mixed with germanium isopropoxide have been used as precursors for the hybrid materials. Planar waveguide films with a thickness of about 2 μm have been prepared by a single spin-coating process and low-temperature heat treatment from these high germanium content hybrid materials. Atomic force microscopy, thermal gravimetric analysis, UV–visible spectroscopy, and Fourier-transform infrared spectroscopy have been used to investigate the optical and structural properties of the films. The results have indicated that a dense, low absorption, and high transparency (in the visible range) waveguide film could be achieved at a low temperature. A strong UV-absorption region at short wavelengths ∼200 nm, accompanied by a shoulder peaked at ∼240 nm, has been noticed due to the neutral oxygen monovacancy defects. The propagation mode and loss properties of the planar waveguide films have also been investigated by using a prism-coupling technique. Received: 5 November 2002 / Revised version: 27 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +65-67909081, E-mail: ewxque@ntu.edu.sg     

Silicon nanowires grown from Au-coated Si substrate

Amorphous Si nanowires were grown on an Au-coated Si substrate by heat treatment at 1000 °C under an H₂ atmosphere. The nanowires have a length of several tens of a micron and a diameter of 10–20 nm. The growth mechanism of the nanowires was investigated and explained with a solid–liquid–solid model. Received: 11 July 2002 / Accepted: 7 July 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86/10-62751615, E-mail: yudp@pku.edu.cn     

Oxidation-induced stoichiometric and morphological change of oxide films on stainless-steel surfaces

The oxidation-induced stoichiometric and morphological changes of the oxide film on a stainless-steel surface are observed by X-ray photoelectron spectroscopy and atomic force microscopy for annealing temperatures in the range 400–500 °C in oxygen partial pressures of 10^-9 to 10^-4 Torr With increasing the temperature, a significant shift occurs in the Cr 2p_3/2 binding energy towards higher energies, indicating a change in the oxidation state of chromium. It is found that at 450 °C lower oxygen partial pressures favor the formation of a smooth, pure chromium oxide. At a low oxygen pressure the oxide formed mainly consists of chromium oxide that shows a markedly smooth surface with no distinct grains, whereas at a high pressure the oxide formed mainly consists of iron oxide with distinct grains. Received: 27 January 1999 / Accepted: 18 March 1999 / Published online: 16 September 1999     

Synchronously pumped femtosecond optical parametric oscillator of congruent and stoichiometric MgO-doped periodically poled lithium niobate

A synchronously pumped femtosecond optical parametric oscillator based on congruent MgO-doped periodically poled lithium niobate (c-MgO:PPLN) is reported. The system, operating at room temperature, was pumped by a mode-locked Ti:sapphire laser. The wavelengths of the signal and idler waves were tuned from 870 nm to 1.54 μm and 1.58 to 5.67 μm, respectively, by changing the pump wavelength, the grating period or the cavity length. Pumped by 1.1 W of 755 nm laser radiation, the OPO generated 310 mW of 1080 nm radiation. This signal output corresponds to a total conversion efficiency of 50%. Without dispersion compensation the OPO generated phase-modulated signal pulses of 200 fs duration. Besides the OPO of c-MgO:PPLN, an OPO of stoichiometric (s) MgO:PPLN was investigated. Because of the reduced sensitivity to photorefractive damage, both crystals allowed efficient OPO operation at room temperature. Received: 19 August 2002 / Revised version: 11 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-631/205-3906, E-mail: andres@physik.uni-kl.de     

Power-boosted difference-frequency source for high-resolution infrared spectroscopy

We analyzed the spectroscopic performance of a difference-frequency source that utilizes a 5-W Yb-fiber amplifier for the “signal” radiation in order to increase the “idler” power generated around 4.3 μm. The amplifier is seeded by a monolithic-cavity Nd:YAG laser at 1064 nm. The intensity noise spectral density of the “idler” radiation was characterized. Cavity-enhanced saturated-absorption spectroscopy was also performed to test the frequency resolution. In particular, we observed the Lamb-dip spectrum of the ro-vibrational (00⁰0-00⁰1)R(0)transition of ¹⁷O¹²C¹⁶O in natural abundance. To our knowledge, this is the first observation of that transition by the Lamb-dip technique. Received: 19 December 2002 / Revised version: 3 February 2003 / Published online: 16 April 2003 RID="*" ID="*"Corresponding author. Fax: +39-055/4572-451, E-mail: mazzotti@inoa.it     

Microstructural properties of bulk nanocrystalline Ag–Ni alloy prepared by hot pressing of mechanically pre-alloyed powders

A bulk nanocrystallined Ag50Ni alloy has been prepared by hot-pressing the mechanically pre-alloyed powders at 620 °C under a normal pressure of 58 MPa in vacuum. The microstructural characteristics of the alloy were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results of the precise determination of the lattice parameters of the phases in the powders and in the alloy by XRD show that, after mechanical alloying for 200 h, the solid solubility of Ag in Ni reaches 4.85±0.21 at %, while that of Ni in Ag reaches 0.84±0.30 at %. After hot pressing, the Ag- and Ni-rich phases in the alloy still show a certain degree of supersaturation, with a solid solubility of 0.45±0.11 at % of Ag in Ni. After further annealing of the alloy at 700 °C for 24 h, the solubility decreases to a value of 0.21±0.11 at % for Ag in Ni and to less than 0.1 at % for Ni in Ag. The grain size of the mechanically alloyed powders was of ca 6 nm. After hot pressing, the grain size of the alloy increased to 40–60 nm and then grew further to 100–110 nm after annealing. The influence of the variation of the grain size and the internal stress on the line breadth of the X-ray diffraction peaks has been evaluated in detail. Finally, the role of the nanocrystalline structure in the fast densification process of the powders is also discussed. Received: 12 September 2001 / Accepted: 18 Febraury 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-24/2389-3624, E-mail: wwt@icpm.syb.ac.cn     

Sub-ps laser microstructuring of soft X-ray Mo/Si multilayer gratings

The sub-picosecond laser microstructuring of multilayer gratings is presented in this paper. A micromachining system operating with a 0.5 ps KrF laser at 248 nm was used to etch grating structures with a groove width of 1–2 μm in Mo/Si and Si/Mo multilayers. Atomic force microscopy, scanning electron microscopy and X-ray reflectivity were used to characterize the microetched patterns. The ω-scans around the 1st Bragg maximum show symmetric satellites up to 3rd order, with positions corresponding to the grating period. The use of sub-picosecond laser pulses minimizes the thermally affected zone and enhances the quality of the etched features. Short pulse laser processing is advantageous for the fabrication of high spatial resolution microstructures required in X-ray optics. Received: 21 May 2002 / Accepted: 19 August 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Email: dpapa@iesl.forth.gr     

A UV–Visible–NIR fluorescence lifetime imaging microscope for laser-based biological sensing with picosecond resolution

This article describes the design and characterization of a wide-field, time-domain fluorescence lifetime imaging microscopy (FLIM) system developed for picosecond time-resolved biological imaging. The system consists of a nitrogen-pumped dye laser for UV–visible–NIR excitation (337.1–960 nm), an epi-illuminated microscope with UV compatible optics, and a time-gated intensified CCD camera with an adjustable gate width (200 ps-10^-3 s) for temporally resolved, single-photon detection of fluorescence decays with 9.6-bit intensity resolution and 1.4-μm spatial resolution. Intensity measurements used for fluorescence decay calculations are reproducible to within 2%, achieved by synchronizing the ICCD gate delay to the excitation laser pulse via a constant fraction optical discriminator and picosecond delay card. A self-consistent FLIM system response model is presented, allowing for fluorescence lifetimes (0.6 ns) significantly smaller than the FLIM system response (1.14 ns) to be determined to 3% of independently determined values. The FLIM system was able to discriminate fluorescence lifetime differences of at least 50 ps. The spectral tunability and large temporal dynamic range of the system are demonstrated by imaging in living human cells: UV-excited endogenous fluorescence from metabolic cofactors (lifetime ∼1.4 ns); and 460-nm excited fluorescence from an exogenous oxygen-quenched ruthenium dye (lifetime ∼400 ns). Received: 23 February 2003 / Published online: 22 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-734/9361-905, E-mail: mycek@umich.edu     

Synthesis and optical properties of nanocrystalline ZnO powders prepared by a direct thermal decomposition route

This paper reports the synthesis and optical properties of nanocrystalline ZnO powders with crystallite sizes of 32.5 (±1.4)–43.4 (±0.4) nm prepared by a direct thermal decomposition of zinc acetate at the temperatures of 400, 500, 600, and 700°C for 4 h. The structure of the prepared samples was studied by XRD and FTIR spectroscopy, confirming the formation of wurtzite structure. The morphology of the samples revealed by SEM was affected by the thermal decomposition temperature, causing the formations of both nanoparticles and nanorods with different size and shape in the samples. The synthesized powders exhibited the UV absorption below 400 nm (3.10 eV) with a well defined absorption peak at around 285 nm (4.35 eV). The estimated direct bandgaps were obtained to be 3.19, 3.16, 3.14, and 3.13 eV for the ZnO samples thermally decomposed at 400, 500, 600, and 700°C, respectively. All the samples exhibited room-temperature photoluminescence (PL) showing a strong UV emission band at ∼395 nm (3.14 eV), a weak blue band at ∼420 nm (2.95 eV), a blue–green band at ∼485 nm (2.56 eV), and a very weak green band at ∼529 nm (2.35 eV). The mechanisms responsible for photoluminescence of the samples are discussed.     

Efficient generation of blue light by frequency doubling of a Nd:YAG laser operating on 4 F 3/24 I 9/2 transitions

Efficient room-temperature operation of ⁴ F _3/2⁴ I _9/2 transitions in diode-end-pumped Nd:YAG lasers at 946 nm and 938.5 nm is reported. 7.0-W continuous-wave output power at 946 nm and 3.9 W at 938.5 nm have been obtained. An analytical model has been developed for the quasi-three-level laser including the influence of energy-transfer upconversion. Frequency doubling of these transitions in periodically poled KTP generated blue light at 473 nm and 469 nm. Both single-pass extra-cavity as well as intracavity schemes have been investigated. Received: 31 July 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +46-8/750-5430, E-mail: stefan.bjurshagen@acreo.se     

Spatial beam profiles of femtosecond X-ray pulses generated by laser Compton scattering from a low-emittance electron beam

Polarization-dependent spatial beam profiles of femtosecond X-ray pulses generated by a laser Compton scheme were measured. The X-ray pulses were generated by the interaction at an angle of 90° between 100-fs laser light and a 3-ps, 3π-mm mrad electron beam. The polarization of the laser light was linear in two different directions, either parallel or perpendicular to the electron beam axis. The measured profiles showed good agreement with theoretical results. Received: 5 July 2002 / Revised version: 17 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +81-424/684477, E-mail: msf_yorozu@shi.co.jp     

A high-sensitivity in situ optical diagnostic technique for laser cleaning of transparent substrates

A differential optical transmission technique has been used to monitor in situ the efficiency of laser cleaning for the removal of sub-micrometer-sized particles on substrates transparent at the monitoring wavelength. This technique has been applied to the removal of sub-micrometer polystyrene particles on polyimide substrates using laser pulses of 30 ps duration at 292 nm while probing the material transmission at 633 nm. The sensitivity achieved -1/10⁴ for the transmission changes induced upon single-pulse laser exposure – allows us to monitor the removal of just a few sub-micron-sized particles from the probed region inside the irradiated area. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +33-3/87844082, E-mail: nchaoui@iut.univ-metz.fr RID="**" ID="**"Present address: Laboratoire de Chimie et Applications, Institut Universitaire de Technologie de Metz, Département Chimie, Rue Victor Demange, 57500 Saint-Avold, France