耦合锗量子点中空穴态对称特性研究

分别采用单带重空穴近似和六带Kronig-Penney模型, 对垂直耦合锗量子点在不同耦合距离下的空穴态特性进行了计算, 并探讨了自旋-轨道的相互作用对空穴态对称性的影响. 计算结果表明: 多带耦合的框架下, 随着量子点垂直间距的增大, 空穴基态从成键态转变为反键态, 而且价带基态能级和第一激发态能级发生反交叉现象, 这与单带模型下得到的相应结果存在较大差异. 通过分析六带模型计算得到的成、反键态波函数, 轻、重空穴态和自旋-轨道分裂态对特征空穴态波函数的贡献比例随着量子点垂直间距的增大发生了转变, 并最终导致量子点空穴基态波函数由成键态转变为反键态. 关键词： 耦合量子点 空穴态 成健态-反健态 自旋-轨道     

隧穿量子点分子模型与光场相互作用的量子信息保真度

利用全量子理论和数值计算方法,研究隧穿量子点分子模型与光场相互作用的量子信息保真度,通过计算机模拟出量子点分子、光场和系统的保真度随时间的演化图像,分析了压缩系数和失谐量对量子信息保真度的影响.结果表明：改变初始光场的压缩系数和失谐量能调节相互作用系统的量子信息保真度.     

Dynamical behaviors of an exciton in an asymmetric double coupled quantum dot

Dynamical behaviors of an exciton in an asymmetric double coupled quantum dot and an alternatingcurrent (ac) electric field have been analyzed based on the two-level approximation theory, and the conditions under which dynamical localization occurs are obtained. It shows that when the amplitude of the ac electric field is small, the Coulomb interaction plays an important role. The dynamical behaviors of the exciton are mainly confined in the low-level subspace. When the ratio of the field intensity to frequency is the root of Bessel function, electron and hole are localized in one dot, and they can be divided with the increasing amplitude of the ac electric field. __________ Translated from Chinese Journal of Semiconductors, 2005, 26(6) (in Chinese)     

Phase-and spin-dependent manipulation of leakage of Majorana mode into double quantum dot

We present a phase-and spin-dependent manipulation of leakage of a Majorana mode into a double quantum dot. We study the density of states(DOS) to show the effect of phase change factor on the Majorana leakage into(out) of a double quantum dot. The DOS is derived from the Green's function of the quantum dot by the equation of motion method, and exhibits a formant structure when φ = 0, 2π and a resonance shape when φ = 0.5π and 1.5π. Also, it changes more strongly under the spin-polarized coefficient than the non-polarized lead. Such a theoretical model can be modified to explore the spin-dependent effect in the hybrid Majorana quantum dot system.     

Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0–

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6–. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing ) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.     

Single FIR-photon detection using a quantum dot

We study single-electron-transistor (SET) operation of the quantum dot (QD) in a strong magnetic field under weak illumination of far-infrared (FIR) radiation, which causes cyclotron resonance (CR) excitation inside the QD. We find that the SET conductance resonance is exceedingly sensitive to the FIR: It switches on (off) upon the excitation of just one electron to a higher Landau level inside the QD, whereby enabling us to detect individual events of FIR-photon (hν 6 meV) absorption.     

Evaluation of electron--electron interactions in coupled quantum dots by using far-infrared spectra

We have studied the far-infrared spectra of two-electron vertically coupled quantum dots in an axial magnetic field by exact diagonalization. The calculated results show an obvious difference in role between the interactions for spin S = 1 and for spin S = O. The results support the possibility to evaluate the interactions by far-infrared spectroscopy in vertically coupled quantum dots.     

High-fidelity quantum sensing of magnon excitations with a single electron spin in quantum dots

Single-electron spins in quantum dots are the leading platform for qubits, while magnons in solids are one of the emerging candidates for quantum technologies. How to manipulate a composite system composed of both systems is an outstanding challenge. Here, we use spin-charge hybridization to effectively couple the single-electron spin state in quantum dots to the cavity and further to the magnons. Through this coupling, quantum dots can entangle and detect magnon states. The detection efficiency can reach 0.94 in a realistic experimental situation. We also demonstrate the electrical tunability of the scheme for various parameters. These results pave a practical pathway for applications of composite systems based on quantum dots and magnons.     

Direct interband light absorption in a strongly prolated ellipsoidal quantum dot

Within the framework of adiabatic approximation the energy levels and direct interband light absorption in a strongly prolated ellipsoidal quantum dot are studied. Analytical expressions for the particle energy spectrum and for absorption threshold frequencies at three regimes of size quantization are obtained. Selection rules for quantum transitions are revealed.     

量子点背光技术的研究进展

量子点材料因具有发光波长可调,色度纯,量子效率高等优异特性而受到广泛关注,在光致发光高色彩显示方面有着巨大的应用潜力。本文综述了量子点背光技术的研究进展,主要对比了QDs On-Chip、QDs On-Surface及QDs On-Edge 3种量子点背光主流技术的基本原理及结构,并分析了它们在液晶显示领域的应用,未来前景及面临的挑战;然后介绍了几种新型的量子点背光技术,并对两种量子点背光新技术进行重点说明:一种是采用低温注塑成型工艺将量子点与高分子材料均匀混合为一体,用于制备直下式背光的量子点体散射型结构扩散板;另一种新技术是采用丝网印刷或喷墨打印工艺将量子点转印至导光板表面,形成应用于侧入式背光的量子点网点微结构导光板。这两种背光都具有制备工艺简单、成本低、生产效率高等特点,对高色域液晶显示的研究及发展意义深远。     

Coherent spectroscopy of a strongly driven triple quantum dot molecule

Based on a calculation model,we study the interference phenomena of serially coupled V-type and Λ-type triple quantum dots (CTQDs) driven simultaneously by a strong driving field and a weak probe field.Strongly depending on the configuration of the three-level CTQD,the probe absorption spectra,which are shown in the tunneling current,exhibit various quantum coherence properties.In the case where the two pairs of transitions of the CTQD have a small eigenfrequency difference △ω,the double-coupling effect of the driving field results in two Autler-Townes doublets and one weak Mollow triplet in one spectrum.With the value of △ω increasing,only one Autler-Townes splitting remains due to the single-coupling of the field.We also find that the effect of spontaneous emission of phonons may lead to an obvious background current,which can be used to distinguish which transition is driven by the driving field in experiment.The interesting quantum property of a CTQD revealed in our results suggests its potential applications in quantum modulators and quantum logic devices.     

Metal–insulator transition in quantum dot arrays

We present evidence for a re-entrant metal–insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal–insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.     

Coherent dynamics in InGaAs quantum dots and quantum dot molecules

We measure the dephasing time of the exciton ground state transition in InGaAs quantum dots (QD) and quantum dot molecules (QDM) using a sensitive four-wave mixing technique. In the QDs we find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400 ps up to 2 ns in a series of annealed QDs with increasing energy separation of 69–330 meV from the wetting layer continuum. Furthermore, the distribution of the fine-structure splitting δ₁ and of the biexciton binding energy δ_B is measured. δ₁ decreases from 96 to with increasing annealing temperature, indicating an improving circular symmetry of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole. In the QDM we measured the exciton dephasing as function of interdot barrier thickness in the temperature range from 5 to 60 K. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed, showing how the quantum mechanical coupling in the molecules affects the exciton lifetime and acoustic-phonon interaction.     

Antiresonance of electron tunneling through a quantum dot array

Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e²/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength.     

Photon-assisted electronic structure and transport for a quantum dot

This paper investigates theoretically the electronic structure and transport of a two-level quantum dot irradiated under a strong laser field at low temperatures. Using the method of Keldysh equation of motion for nonequilibrium Green functions, it examines the time-averaged density of states and conductance for the system with photon polarization parallel with and perpendicular to the tunnelling current direction respectively. It is demonstrated that, by analysing some numerical examples, more photon sidebands resonance states and multi- and single-photon transitions are found when diagonal matrix elements dominate the interaction, while the electronic transitions due to multiphoton absorption are more or less suppressed when off-diagonal interaction dominates.     

Inspection of the number of electrons in the ring of a quantum dot

On the electronic structures of quantum dots, there is a new viewpoint saying that, in some specific states a few electrons might behave as valence electrons moving outside surrounding a core. To clarify the validity of this viewpoint, a numerical calculation was performed in this paper. The results are against this viewpoint.     

Decay of a quantum dot in two-dimensional metallic photonic crystals

In this paper we have developed a theory for the decay of a quantum dot doped in a two-dimensional metallic photonic crystal consisting of two different metallic pillars in an air background medium. This crystal structure forms a full two-dimensional photonic band gap when the appropriate pillar sizes are chosen. The advantage of using two metals is that one can easily control the density of states and optical properties of these photonic crystals by changing the plasma energies of two metals rather than one. Using the Schrödinger equation method and the photonic density of states, we calculated the linewidth broadening and the spectral function of radiation due to spontaneous emission for two-level quantum dots doped in the system. Our results show that by changing the plasma energies one can control spontaneous emission of quantum dots doped in the metallic photonic crystal.     

Selective growth of GaInN quantum dot structures

In this work, we present an approach to fabricate GaInN quantum dots. The idea is to have a complete control of the position of the quantum dot during the growth and to use this positioned dot for future functioning. For this purpose we have prepared templates with selectively grown GaN pyramids by MOVPE. After proper adjustment of the GaN growth we have overgrown these templates with InGaN to form the quantum dots on top of the pyramids. Finally the structures were capped with GaN and photoluminescence measurements were performed.     

点间耦合强度对三耦合量子点系统微分电导的影响

本文利用非平衡格林函数运动方程方法,研究了与两个电极耦合在一起的三耦合量子点系统的微分电导及量子干涉的AB振荡问题.通过理论计算发现,由于量子点上的局域态密度的不同从而导致系统电导或隧穿性质的不同,而且量子点间耦合强度、量子点能级等都会对输运性质产生影响. 关键词： 量子点 非平衡格林函数 运动方程 局域态密度