Dynamical behaviors of an exciton in an asymmetric double coupled quantum dot

Dynamical behaviors of an exciton in an asymmetric double coupled quantum dot and an alternatingcurrent (ac) electric field have been analyzed based on the two-level approximation theory, and the conditions under which dynamical localization occurs are obtained. It shows that when the amplitude of the ac electric field is small, the Coulomb interaction plays an important role. The dynamical behaviors of the exciton are mainly confined in the low-level subspace. When the ratio of the field intensity to frequency is the root of Bessel function, electron and hole are localized in one dot, and they can be divided with the increasing amplitude of the ac electric field. __________ Translated from Chinese Journal of Semiconductors, 2005, 26(6) (in Chinese)     

Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0–

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6–. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing ) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.     

Single FIR-photon detection using a quantum dot

We study single-electron-transistor (SET) operation of the quantum dot (QD) in a strong magnetic field under weak illumination of far-infrared (FIR) radiation, which causes cyclotron resonance (CR) excitation inside the QD. We find that the SET conductance resonance is exceedingly sensitive to the FIR: It switches on (off) upon the excitation of just one electron to a higher Landau level inside the QD, whereby enabling us to detect individual events of FIR-photon (hν 6 meV) absorption.     

Direct interband light absorption in a strongly prolated ellipsoidal quantum dot

Within the framework of adiabatic approximation the energy levels and direct interband light absorption in a strongly prolated ellipsoidal quantum dot are studied. Analytical expressions for the particle energy spectrum and for absorption threshold frequencies at three regimes of size quantization are obtained. Selection rules for quantum transitions are revealed.     

量子点背光技术的研究进展

量子点材料因具有发光波长可调,色度纯,量子效率高等优异特性而受到广泛关注,在光致发光高色彩显示方面有着巨大的应用潜力。本文综述了量子点背光技术的研究进展,主要对比了QDs On-Chip、QDs On-Surface及QDs On-Edge 3种量子点背光主流技术的基本原理及结构,并分析了它们在液晶显示领域的应用,未来前景及面临的挑战;然后介绍了几种新型的量子点背光技术,并对两种量子点背光新技术进行重点说明:一种是采用低温注塑成型工艺将量子点与高分子材料均匀混合为一体,用于制备直下式背光的量子点体散射型结构扩散板;另一种新技术是采用丝网印刷或喷墨打印工艺将量子点转印至导光板表面,形成应用于侧入式背光的量子点网点微结构导光板。这两种背光都具有制备工艺简单、成本低、生产效率高等特点,对高色域液晶显示的研究及发展意义深远。     

Metal–insulator transition in quantum dot arrays

We present evidence for a re-entrant metal–insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal–insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.     

Coherent dynamics in InGaAs quantum dots and quantum dot molecules

We measure the dephasing time of the exciton ground state transition in InGaAs quantum dots (QD) and quantum dot molecules (QDM) using a sensitive four-wave mixing technique. In the QDs we find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400 ps up to 2 ns in a series of annealed QDs with increasing energy separation of 69–330 meV from the wetting layer continuum. Furthermore, the distribution of the fine-structure splitting δ₁ and of the biexciton binding energy δ_B is measured. δ₁ decreases from 96 to with increasing annealing temperature, indicating an improving circular symmetry of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole. In the QDM we measured the exciton dephasing as function of interdot barrier thickness in the temperature range from 5 to 60 K. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed, showing how the quantum mechanical coupling in the molecules affects the exciton lifetime and acoustic-phonon interaction.     

Antiresonance of electron tunneling through a quantum dot array

Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e²/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength.     

Selective growth of GaInN quantum dot structures

In this work, we present an approach to fabricate GaInN quantum dots. The idea is to have a complete control of the position of the quantum dot during the growth and to use this positioned dot for future functioning. For this purpose we have prepared templates with selectively grown GaN pyramids by MOVPE. After proper adjustment of the GaN growth we have overgrown these templates with InGaN to form the quantum dots on top of the pyramids. Finally the structures were capped with GaN and photoluminescence measurements were performed.     

Nanomechanical resonator coupling with a double quantum dot: quantum state engineering

We propose a theoretical scheme to realize quantum state engineering of a nanomechanical resonator (NAMR) through the coupling between the NAMR and a double quantum dot (DQD). Hybrid entangled states between the NAMR and the DQD and superposed coherent states of the NAMR are created explicitly. It is shown that quantum state tomography for the NAMR can be implemented through carrying out unitary operations on the NAMR and the DQD. It is indicated that the scheme is feasible at the reach of the present technology.     

Decay of a quantum dot in two-dimensional metallic photonic crystals

In this paper we have developed a theory for the decay of a quantum dot doped in a two-dimensional metallic photonic crystal consisting of two different metallic pillars in an air background medium. This crystal structure forms a full two-dimensional photonic band gap when the appropriate pillar sizes are chosen. The advantage of using two metals is that one can easily control the density of states and optical properties of these photonic crystals by changing the plasma energies of two metals rather than one. Using the Schrödinger equation method and the photonic density of states, we calculated the linewidth broadening and the spectral function of radiation due to spontaneous emission for two-level quantum dots doped in the system. Our results show that by changing the plasma energies one can control spontaneous emission of quantum dots doped in the metallic photonic crystal.     

Spectroscopy of molecular states in a few-electron double quantum dot

Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mesoscopic model systems and prospective building blocks of the “quantum computer”. Electrons are trapped locally in quantum dots, forming controllable and coherent mesoscopic atom- and moleculelike systems. Electrostatic definition of quantum dots by use of top gates on a GaAs/AlGaAs heterostructure allows wide variation of the potential in the underlying two-dimensional electron gas. By distorting the trapping potential of a single quantum dot, a strongly tunnel-coupled double quantum dot can be defined. Transport spectroscopy measurements on such a system charged with N=0,1,2,… electrons are presented. In particular, the tunnel splitting of the double well potential for up to one trapped electron is unambiguously identified. It becomes visible as a pronounced level anticrossing at finite source drain voltage. A magnetic field perpendicular to the two-dimensional electron gas also modulates the orbital excitation energies in each individual dot. By tuning the asymmetry of the double well potential at finite magnetic field the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot can be aligned, resulting in a second level anticrossing with a larger tunnel splitting. In addition, data on the two-electron transport spectrum are presented.     

Observation of Overhauser shift in a self-assembled InAlAs quantum dot

We report the polarization-dependent energy shift of excitonic emission in a self-assembled InAlAs/AlGaAs quantum dot (QD). The energy shift is well known as Overhauser shift and was observed in a naturally formed GaAs QD using monolayer fluctuation of a quantum well. However, there has been no observation so far in a self-assembled QD, which is suitable for formation of vertically coupled QDs. We demonstrate that the magnitude of the Overhauser shift is enhanced by the photo-injection of the highly polarized electron and is controllable by the polarization of the excitation light in a self-assembled InAlAs QD.     

Spin-dependent transport through quantum dot with inelastic interactions

Using the Keldysh nonequilibrium Green function method, we theoretically investigate the electron transport properties of a quantum dot coupled to two ferromagnetic electrodes, with inelastic electron-phonon interaction and spin flip scattering present in the quantum dot. It is found that the electron-phonon interaction reduces the current, induces new satellite polaronic peaks in the differential conductance spectrum, and at the same time leads to oscillatory tunneling magnetoresistance effect. Spin flip scattering suppresses the zero-bias conductance peak and splits it into two, with different behaviors for parallel and anti-parallel magnetic configuration of the two electrodes. Consequently, a negative tunneling magnetoresistance effect may occur in the resonant tunneling region, with increasing spin flip scattering rate.     

Another model for a multiexcitonic quantum dot in an optical microcavity

Very recently, a multiexcitonic quantum dot in an optical microcavity have been theoretically studied [Herbert Vincka, Boris A. Rodriguez, and Augusto Gonzalez, Physica E, 2006, 35: 99–102]. However, due to the inevitable damping losses through the microcavity, in this work, we will present a more precise and sound model in the Lindblad form master equation to investigate the photonic properties of a single quantum dot (QD) in an optical microcavity system, in which the QD may confine the multiexcitons and be in resonant interaction with a single photonic mode of an optical microcavity. The excitation energies, and the properties of the emission photon from the QD microcavity are computed as functions of the exciton-photon coupling strength, detuning, and pump rate. We further compare our results with their results, and find that the calculated intensity of the emitted photon and the spectra crucially depend on the exciton-photon coupling strength g, the photon detuning, and the number of excitons in the QD. Finally, we will give a physical mechanism of the dressed-state picture for the strong coupling between the single mode of an optical microcavity and the QD emitters to explain the details of the emission photon spectra. Our study establishes useful guidelines for the experimental study of such multiexcitonic quantum dot in an optical microcavity system.      

Interface and propagating optical phonon mixing modes in a wurtzite GaN-based quantum dot

The polar optical phonon vibrating modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quantum dot (QD) are solved exactly based on the dielectric continuum model and Loudon’s uniaxial crystal model. The result shows that there exist four types of polar mixing optical phonon modes in the Q0D wurtzite cylindrical QD systems, which is obviously different from the situation in blende cylindrical QDs. The dispersive equations for the interface-optical-propagating (IO-PR) mixing modes are deduced and discussed. It is found that the dispersive frequency of IO-PR mixing modes in wurtzite QD just take a series of discrete values due to the three-dimensional confined properties. Moreover, once the radius or the height of the QD approach infinity, the dispersive equations of the IO-PR mixing modes in the wurtzite Q0D cylindrical QD can naturally reduce to those of the IO and PR modes in Q2D QWs or Q1D QWWs systems. This has been analyzed reasonably from both physical and mathematical viewpoints. The analytical expressions obtained in the paper are useful for further investigating phonon influence on physical properties of the wurtzite Q0D QD systems.     

Effect of a magnetic impurity on the optical properties of a spherical ZnSe quantum dot

We consider the electron and hole states in a semiconductor ZnSe spherical quantum dot, in the center of which a magnetic impurity atom of manganese is located. In calculations the quantum dot is approximated by a spherical rectangular well with a finite depth. Within the framework of perturbation theory, the effect of exchange spin interaction of an electron and a hole with a magnetic impurity on the band structure of the system is considered. The optical spectrum of the system for different polarizations of the incident light is studied also.     

Influence of the quantum dot shape on the determination of the electronic structure and electron decoherence

Theoretical calculations of electron–phonon scattering rates in AlGaN/GaN quantum dots (QDs) have been performed by means of effective mass approximation in the frame of finite element method. The influence of a symmetry breaking of the carrier's wave function on the electron dephasing time is investigated for various QDs shapes. In a QD system the electron energy increases when the QD shape changes from a spherical to a non-spherical form. In addition, the influence of the QD shape upon the electronic structure can be modulated by external magnetic fields. We also show that the electron–acoustic phonon scattering rates strongly depend upon both the QD shape and the applied magnetic field. As an additional parameter, the QD shape can be used to modify the electron–acoustic phonon interaction in a wide range. Moreover, the scattering rate of different transitions, such as Δm=0(1), presents distinct magnetic field dependency.     

Two-dimensional Thomas-Fermi parabolic quantum dot in a weak magnetic field

The Thomas-Fermi equation, in conjunction with the Poisson equation is solved exactly for the problem of the two-dimensional circular parabolic quantum dot in the presence of a weak magnetic field, in the framework of the local spin-density approximation. The total energy, chemical potential, differential capacitance, degree of polarization, and diamagnetic susceptibility were calculated. Asymptotic solutions were obtained for the limits of strong and weak confinement. Received 19 February 1999 and Received in final form 26 July 1999     

Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot

We report about spatially resolved magneto-optical experiments on a self-assembled InGaAs quantum dot. Using electron beam lithograpy for patterning a metal shadow mask we can isolate a single dot. This allows us to study the optical response of a single dot as a function of excitation power and magnetic field. We investigate the influence of many body interaction in the emission spectra for different exciton occupation numbers of the dot. The diamagnetic/orbital shift as well as Zeeman splitting in a magnetic field can be fully resolved and are used to identify the observed emission lines. Further we report on absorption properties of the quantum dot as a function of magnetic field. We analyse in detail the phonon-assisted absorption process connected with the GaAs LO-phonon 36 meV above the single-exciton ground state.