Compact oscillator-amplifier XeCl laser with high brightness

In this work we present the behavior of a very compact XeCl laser system.Itconsists of an oscillator and an amplifier,both with lateral UV-preionization.Both dischargeelectrodes are contained in a single vessel.An unstable optical cavity is applied to the oscilla-tor.An output beam of 105 mJ,with a brightness of 5.5× 10~(l3)Wcm~(-2)Sr~(-1) and with a diver-gence of 0.9 mrad has been obtained.     

A new idea for high brightness pulsed electron microscope

We proposed to equip an electron microscope with laser-driven photocathode and make it operate in a CW state or ps pulse state with high brightness as an ideal electron beam source for pulsed electron microscope.     

Fabrication of ZnO nanorods for optoelectronic device applications

Hydroxyl free zinc oxide nanorods have been synthesized by a catalyst free surfactant based one-step solid state reaction process. The powder X-ray diffraction studies reveal well defined wurtzite peaks due to crystalline ZnO, while optical absorption spectra represent prominent exciton absorption and remarkable blueshift in the onset of absorption. As predicted by transmission electron microscopy, the ZnO nanorods are ∼100 nm long and of ∼20 nm dia. Further, luminescence aspects of such nanorods are studied for possible deployment in optoelectronics devices.      

Capillary waveguide optrodes for Medical applications

Glass capillaries with a chemically sensitive coating on the inner surface are used as optical sensors for medical diagnostics. The capillary simultaneously serves as a sample compartment, a sensor element, and an inhomogeneous optical waveguide. Different optical setups have been investigated and compared regarding its waveguiding properties.     

Color-stable,reduced efficiency roll-off hybrid white organic light emitting diodes with ultra high brightness

High-brightness and color-stable two-wavelength hybrid white organic light emitting diodes (HWOLEDs) with the configuration of indium tin oxide (ITO)/ N, N, N, N-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD): tetrafluoro-tetracyanoqino dimethane (F4-TCNQ)/N,N-di(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)/ 4,4-N,N-dicarbazolebiphenyl (CBP): iridium (III) diazine complexes (MPPZ) 2 Ir(acac)/NPB/2-methyl-9,10-di(2-naphthyl)anthracene (MADN): p-bis(p-N,N-di-phenyl-aminostyryl)benzene (DSA-ph)/bis(10-hydroxybenzo[h] quino-linato)beryllium complex (Bebq2)/LiF/Al have been fabricated and characterized. The optimal brightness of the device is 69932 cd/m2 at a voltage of 13 V, and the Commission Internationale de l'Eclairage (CIE) chromaticity coordinates are almost constant during a large voltage change of 6-12 V. Furthermore, a current efficiency of 15.3 cd/A at an illumination-relevant brightness of 1000 cd/m2 is obtained, which rolls off slightly to 13.0 cd/A at an ultra high brightness of 50000 cd/m2. We attribute this great performance to wisely selecting an appropriate spacer together with effectively utilizing the combinations of exciton-harvested orange-phosphorescence/blue-fluorescence in the device. Undoubtedly, this is one of the most exciting results in two-wavelength HWOLEDs up to now.     

高功率微波在等离子体填充波导中的谐波产生

采用等离子体流体理论，研究了高功率微波在等离子体填充波导中的谐波产生，导出了非线性波动方程. 对二次谐波产生进行了数值计算与分析. 理论分析和数值计算表明，高功率微波将在等离子体填充波导中激发起谐波，TE_0n模式与TM_0n模式的基波都将激发起TM类型的谐波. 关键词： 高功率微波 谐波产生 等离子体填充波导     

Gain-assisted indented plasmonic waveguide for low-threshold nanolaser applications

A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite element method.We numerically calculate the normalized mode areas and percentages of energy confined in InGaAsP and metal for plasmonic nanolaser applications.It is shown that the indentation of the sidewalls has an optimal value for which the lasing threshold gain is minimal.The structure could enable low-threshold subwavelength lasing and applications for optoelectronic integrated circuits.     

正弦波导高频特性分析

对一种全金属慢波系统—–正弦波导的高频特性进行了理论分析.在用一系列相连矩形阶梯逼近余弦槽的基础上,对慢波结构进行了合理的区域划分,获得了各区域的场表达式.考虑槽区的高次驻波项,采用场匹配和导纳匹配相结合的方法,导出色散方程和耦合阻抗表达式.以应用于220 GHz行波管的正弦波导为例进行高频特性的数值求解,理论计算值与全三维电磁软件CST-MWS的仿真值符合良好.在此基础上,详细分析了尺寸参数变化对正弦波导高频特性的影响.     

自动亮度控制对微光电视系统强光适应性的影响

定量分析了自动亮度控制对微光电视系统强光适应性的影响。结合系统信号响应特性,建立了自动亮度控制作用后强光能量与系统成像对比度的关系模型;充分考虑系统动态范围、增益特性、灰度量化等因素,建立了自动亮度控制电路作用后系统响应特性的定量表征模型。基于上述模型,建立了引入自动亮度控制后强光作用微光系统成像的数字仿真模型,并基于模拟输出图像定量分析了不同能量强光对系统侦察性能的影响。理论分析及实验仿真结果表明：自动亮度控制的引入,能够扩大微光系统的动态范围,增强微光电视系统的适用性,但同时导致系统随着强光光亮度增大,成像灰度及对比度下降,侦察性能下降。     

7.8GHz power generation device design using a rectangular dielectric-loaded waveguide

In this paper, we present a design where a bunched relativistic electron beam traversing inside the rectangular dielectric-loaded (DL) waveguide is used as a high power microwave generation device. Two kinds of methods of calculating the electromagnetic (EM) field excited by a bunched beam are introduced, and in the second method the calculation of EM pulse length is discussed in detail. The desired operating mode is the LSM_11 due to its strong interaction with the electron beam. For the designed 7.8~GHz operating frequency, with a 100~nC/bunch drive train of electron bunches separated by 0.769~ns, we find that high gradient (>30~MV/m) and high power (>160~MW) can be generated. An output coupler is also designed which is able to extract the generated power to standard waveguides with a 94% coupling efficiency.     

Optical design of bent rib waveguide with MOS cross-section

We provided a single-mode bent MOS-cross-section rib waveguide design with 0.9 dB/cm bending loss at 25 μm bending radius. The peak position for the TE-like mode was tuned to the gate oxide around which the maximum amount of free carriers are accumulated to optimize the free carrier dispersion effect.     

表面等离子波导及应用

本文在介绍表面等离子波导基本理论的基础上,主要对表面等离子波导的若干应用进行综述, 包括基于表面等离子波导实现的光学和微波频段的慢波效应、类电磁感应透明现象、可调滤波器,以及通过对电磁波绕射而实现的隐身效应等。最后指出该领域存在的问题与挑战, 并对今后的发展趋势进行了展望。分析认为,通过引入增益介质、采用超导材料等方法降低表面等离子波导材料的损耗、减少工艺制作的难度是今后亟待解决的问题。     

高功率微波弯曲矩形波导设计

 利用模式耦合理论,在理论推导出弯曲矩形波导TE01模和高阶模之间耦合系数显式表达的基础上,对弯曲矩形波导进行了实例研究。HFSS软件数值仿真结果表明：设计的矩形波导TE01-TE02模式转换器在9.5 GHz转换效率达到99.9%,转换效率大于90%的工作带宽为8.60～10.48 GHz;设计的弯曲矩形波导传输线,可有效传输TE01模,不激励起高阶模式。HFSS数值仿真结果验证了所设计的传输线工作带宽和功率容量均能够满足使用要求。     

高功率过模圆波导到两路矩形波导功分器

基于模式匹配法分析了高功率过模圆波导到两路矩形波导功分器在传输过程中高阶模式的传输和反射问题,分析得到了高传输效率对过模圆波导的要求,并以此仿真设计了中心频率为2.88 GHz的功分器,设计结果表明：在中心频率下反射系数为0.05,对应的圆波导TM01模到矩形波导TE10模传输效率大于99%,真空中功率容量为2.83 GW;在2.82～2.94 GHz的频带范围内反射系数小于0.1,对应的传输效率大于98%。     

高功率过模圆波导到两路矩形波导功分器

基于模式匹配法分析了高功率过模圆波导到两路矩形波导功分器在传输过程中高阶模式的传输和反射问题,分析得到了高传输效率对过模圆波导的要求,并以此仿真设计了中心频率为2.88GHz的功分器,设计结果表明:在中心频率下反射系数为0.05,对应的圆波导TM01模到矩形波导TE10模传输效率大于99%,真空中功率容量为2.83GW;在2.82~2.94GHz的频带范围内反射系数小于0.1,对应的传输效率大于98%。     

基于螺旋波纹波导高增益高效率被动式压缩方法

对一种改进型螺旋波纹波导实现高增益高效率被动式脉冲压缩进行了研究,并利用微扰理论求解出了该波导的损耗特性。结合波导的色散和损耗特性,设计了输入微波的频率调制形式。还对改进型螺旋波纹波导进行了模拟研究,在输入脉冲宽度为66 ns的条件下,得到了半高宽为1.9 ns的压缩脉冲,增益为21.2倍,脉冲宽度比为34.7倍,压缩效率为61%,这表明改进型螺旋波纹波导应用于被动式脉冲压缩具有高效率高增益特性。     

一种高功率微波金属片波导移相器设计与特性分析

设计了一种高功率微波矩形波导移相器,在矩形波导中平行于电场放置金属片,沿波导宽边移动金属片,实现波导内的可变相移。通过优化设计波导和金属片的结构尺寸可实现0～360相移,通过优化设计金属片过渡匹配结构可实现较低的插损。设计波导内为全金属结构,不存在介质材料,采用真空绝缘可以承受较高的功率传输。设计了中心频率为9.4 GHz的金属片波导移相器,移相器最大插损小于0.2 dB,功率容量设计达到64 MW。实验测试,移相器最大插损小于0.5 dB,相频曲线呈线性关系。     

高功率微波弯曲矩形波导设计

利用模式耦合理论,在理论推导出弯曲矩形波导TE01模和高阶模之间耦合系数显式表达的基础上,对弯曲矩形波导进行了实例研究。HFSS软件数值仿真结果表明：设计的矩形波导TE01-TE02模式转换器在9.5 GHz转换效率达到99.9%,转换效率大于90%的工作带宽为8.60～10.48 GHz;设计的弯曲矩形波导传输线,可有效传输TE01模,不激励起高阶模式。HFSS数值仿真结果验证了所设计的传输线工作带宽和功率容量均能够满足使用要求。     

Novel wavelength-accurate InP-based arrayed waveguide grating

A 13-channel, InP-based arrayed waveguide grating （AWG） is designed and fabricated in which the on-chip loss of the central channel is about -5 dB and the crosstalk is less than -23 dB in the center of the spectrum response. However, the central wavelength and channel spacing are deviated from the design values. To improve their accuracy, an optimized design is adopted to compensate the process error. As a result, the central wavelength 1549.9 nm and channel spacing 1.59 nm are obtained in the experiment, while their design values are 1549.32 nm and 1.6 nm, respectively. The route capability and thermo-optic characteristic of the AWG are also discussed in detail.     

波导内置硅块对高功率太赫兹脉冲的响应

利用三维电磁场时域有限差分法,对0.3~0.4 THz高功率太赫兹脉冲作用下置于矩形波导内部宽边中心的n型硅块响应规律进行了研究。通过对置入硅块前后矩形波导内电磁场分布、电压驻波比及硅块内平均电场的模拟分析,得出硅块几何尺寸和电阻率对上述物理量的响应规律,硅块长、宽、高和电阻率均会对波导内电压驻波系数产生影响,其中以高度影响最为明显;硅块内平均电场在低频段和高频段单调性不一致。最后,在优化硅块长、宽、高及电阻率的基础上,给出了一种可用于该频段高功率太赫兹脉冲直接测量的电阻探测器芯片设计方案,其相对灵敏度约为0.509 kW-1,幅度波动不超过14%,电压驻波比不大于1.34。