发射光谱法测定二氧化锆中钙,镁,铝,铁,钛,铪,硅

本文介绍了用碳酸钡作缓冲剂测定二氧化锆中Ｍｇ，Ｆｅ，Ａｌ，Ｃａ，Ｔｉ，Ｈｆ，Ｓｉ杂质元素的发射光谱方法。该方法直接压样于普通电极中，简便，快速。取得了满意的结果。     

ICP－AES法分析水质的探讨

本文用ＩＣＰ－ＡＥＳ（电感耦合等离子体－原子发射光谱法）测定水中Ａｌ、Ｂ、Ｂａ、Ｂｅ、Ｃａ、Ｃｄ、Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｇ、Ｍｏ、Ｍｎ、Ｎｉ、Ｐｂ、Ｓｒ、Ｖ、Ｚｎ等１８种微量元素。方法简便、快速，只将样品简单酸化，即可测定。方法检出限为０．０００５－０．５μｇ／ｍＬ。相对标准偏差＜１８％     

发射光谱法测定二氧化锆中钙、镁、铝、铁、钛、铬、硅

本文介绍厂用碳酸钡作缓冲剂测定二氧化锆中Ｍｇ、Ｆｅ、ＡＩ、Ｃ。、Ｔｉ、Ｈｆ、Ｓｉ杂质元素的发射光谱方法。该方法直接压样于普通电极中，简便、快速。取得了满意的结果。     

用发射光谱分析法检测地膜中金属杂质含量

本文描述农用薄膜中Ａｌ、Ｆｅ、Ｍｇ、Ｃａ、Ｓｉ、Ｃｕ、Ｔｉ杂质元素的发射光谱分析法，该方法直接压样于石墨电极中，简便，快速，取得了满意的结果。     

ICP－AES测定核纯海绵锆中17个杂质元素方法的研究

应用ＩＣＰ－ＡＥＳ法，对核纯海绵锆中１７个杂质元素的测定进行了试验研究。取样量１００ｍｇ时，Ａｌ、Ｃａ、Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｇ、Ｍｎ、Ｍｏ、Ｎｉ、Ｐｂ、Ｓｎ、Ｔａ、Ｔｉ、Ｖ、Ｙ和Ｚｎ的测定范围是１０μｇ／ｇ—３２００μｇ／ｇ。回收率为９５．２％—１０６．５％。     

ICP—AES测定核纯海绵锆中17个杂质元素方法的研究

应用ＩＣＰ－ＡＥＳ法，对核纯海绵锆中１７个杂质元素的测定进行了试验研究。取样量１００ｍｇ时，Ａｌ、Ｃａ、Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｇ、Ｍｎ、Ｍｏ、Ｎｉ、Ｐｂ、Ｓｎ、Ｔａ、Ｔｉ、Ｖ、Ｙ和Ｚｎ的测定范围是１０μｇ／ｇ－３２００μｇ／ｇ。回收率为９５．２％－１０６．５％。     

ICP-AES法测定金属硅中的Al、B、Ba、Ca、Cr、Cu、 Fe、Mg、Mn、Ni、Sr、Ti、V和Zn杂质元素

本文提供了一种测定金属硅中Ｂ,Ｆｅ,Ａｌ,Ｃａ,Ｍｎ等１４个杂质元素的ＩＣＰ－ＡＥＳ方法,在样品处理过程中,加入适量体积的甘露醇能够抑制Ｂ的挥发。用本方法测定了一个国家地球化学标准样（ＧＳＲ－４）,结果令人满意。     

焙烧温度对Mg(Al)O复合物结构和表面酸碱性质影响的研究

分别在６７３。８７３和１０７３Ｋ分解Ｍｇ／Ａｌ摩尔经继３的水滑石生成Ｍｇ（Ａｌ）Ｏ复合物，ＸＲＤ测定均ＭｇＯ物相，８７３Ｋ以上焙烧的样品同时存在ＭｇＡｌ２Ｏ４尖晶石物相，微量吸附量热测定其表面酸碱中心的强度和密度，发现碱中心强度和密度顺序为ＭＡＯ－２〈ＭＡＯ－３≈ＭＡＯ－１，而酸中心强度和密度顺序是：ＭＡＯ－１〉ＭＡＯ－３≈ＭＡＯ－２，红外光谱表明，Ｍｇ（Ａｌ）Ｏ复合物表面酸碱中心主要存在Ｌ酸，碱     

ICP－AES法测定栽培灵芝中9种微量元素

本文报导了采用美国ＬｅｅｍａｎＬａｂｓ公司生产的ＰＳ－Ⅰ型中阶梯光栅光谱仪，对栽培灵芝中Ｇｅ、Ｃａ、Ｍｇ、Ｚｎ、Ｃｕ、Ｍｎ、Ｆｅ、Ｋ、Ｎａ等元素进行了测定。为防止Ｇｅ的挥发损失，采用了ＨＮＯ３－ＨＣｌＯ４低温湿法消化的前处理方法。相对标准偏差为１．３１％－９．１１％，回收率为９１．０％－１１０．０％，结果令人满意。     

内标－脉冲雾化ICP－AES测定微量体液中的Ca、Mg、Fe、Zn、P、Mn、Cu、Pb、Sr

采用内标－脉冲雾化进样法，建立了微量体液的ＩＣＰ－ＡＥＳ分析方法。对内标的选择，分析信号与进样量的关系和分析标准曲线等方面进行了研究，测定了微量体液样品中的Ｃａ、Ｍｇ、Ｆｅ、Ｚｎ、Ｐ、Ｍｎ、Ｃｕ、Ｐｂ、Ｓｒ等元素的含量，获得了较满意的结果。     

发射光谱法测定高纯银中微量金、铂、钯、铑、铱、锑、铅、铋、铁、铜、镍、铬、铝和锌

本文研究了贵金属标准溶液除氯离子的有关问题，解决了高纯硝酸银中贵金属等杂质元素的标样配制，以硝酸银直接压样于普通电极中直流电弧激发，可测定９９．０～９９．９９％的高纯银，该方法简便、快速、准确。     

纯硒中杂质元素的ICP-AES测定

电感耦合等离子体-原子发射光谱同时测定纯硒中的碲、铅、铋、锑、铜、铁、镍、铝、锡、砷和硼12种元素的含量,优化出各元素的分析波长和分析条件;用基体匹配补偿基体效应,方法简单,快速可靠,样品回收率为94%-107%.     

Solution absorption and luminescence studies of tetraphenylboron, -carbon, -silicon, -germanium, -tin, -lead, -phosphorus, -arsenic,and -antimony

The lowest absorption band of the tetraphenyl compounds resembles that of the lowest absorption band of benzene with the following difference. In benzene the electronic origin is strictly forbidden, and all intensity is associated with a symmetric progression built on one mode of asymmetric vibration. In the tetraphenyl compounds the intensity associated with the asymmetric vibration is relatively unaffected; however, there is increasing intensity associated with the electronic origin and a symmetric progression built on it along the series

$\text{φ}{}_4\text{Pb}\text{< φ}{}_4\text{Sn}\text{< φ}{}_4\text{Ge}\text{< φ}{}_4\text{Si}\text{< φ}{}_4\text{C}\text{? φ}{}_4\text{B}{}^{\mathrm{?}}\text{< φ}{}_4\text{Sb}{}^{\mathrm{+}}\text{< φ}{}_4\text{As}{}^{\mathrm{+}}\text{< φ}{}_4\text{P}{}^{\mathrm{+}}$

. For the cations it is the electronic origin and the progression built on it that are the primary source of intensity. This effect is attributed to an inductive perturbation. A similar effect is observed in the fluorescence spectrum. In phosphorescence, the relative enhancement of the electronic origin and the progression built on it is far less marked. The phosphorescence emission of φ₄Pb and φ₄Sb⁺ are red shifted from the others by ～0.5 eV, an effect attributed to formation of a triplet excimer. Increasing spin-orbit coupling in the triplet due to a heavy atom effect can be seen in the decreasing phosphorescence lifetime (range 4 sec to 4 msec) and decreasing ratio of $\text{φ}{}_{\mathrm{f}}\text{φ}{}_{\mathrm{p}}$ (fluorescence to phosphorescence quantum yields) in the order

$\text{φ}{}_4\text{C}\text{> φ}{}_4\text{B}\text{> φ}{}_4\text{Si}\text{> φ}{}_4\text{P}{}^{\mathrm{+}}\text{> φ}{}_4\text{Ge}\text{> φ}{}_4\text{As}{}^{\mathrm{+}}\text{> φ}{}_4\text{Sn}$

In all cases nonexponential decay of phosphorescence is observed.     

ICP-AES法直接测定锡锭中的As、Al、Bi、Cd、Cu、Fe、Pb、Se、Sb、Zn

以电荷耦合器件为检测器的全谱直读等离子体光谱仪直接测定锡锭中As、Al、Bi、Cd、Cu、Fe、Pb、Se、Sb、Zn十种杂质元素的含量.该方法简便、快速且具有比化学法更低的检出限,加标回收试验结果表明,回收率为92%-105%,RSD均小于1.5%.     

BN,AlN, GaN,InN: Charge Neutrality Level,Surface, Interfaces,Doping

Russian Physics Journal - On the basis of the charge neutrality concept, the analysis is fulfilled of the experimental data on the electron properties of the defective semiconductors after the...     

Surface energies of the solid solutions between Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W

The surface energy for different surface orientations of the solid solutions as a function of concentration formed by Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W is computed and analyzed using the BFS method for alloys. Similarities and differences among the different binary alloys are examined in terms of strain and chemical effects.