Passively Q-Switched Ho:SSO Laser by Use of a Cr~(2+):ZnSe Saturable Absorber

A cw operation and a passively Q-switched(PQS) Ho:SSO laser(Cr~(2+):ZnSe as a saturable absorber) end-pumped by a Tm:YAP laser operating at near room temperature are reported. It is the first time to report a PQS Ho:SSO laser. For the cw mode, a maximum cw output power of 3.0 W is obtained, corresponding to a slope effciency of31.4%. For the PQS mode, a Cr~(2+):ZnSe is used as the saturable absorber, with transmission of 88.4% at 2112 nm.A maximum pulse energy of 1.29 mJ is obtained, corresponding to the pulse repetition frequency of 2.42 kHz. In this study, we change the distance between:Cr~(2+):ZnSe and the output mirror to research the pulse characteristic of the PQS Ho:SSO laser. The minimum pulse width of 73.5 ns is obtained, corresponding to the pulse energy of0.9 mJ and the pulse repetition frequency of 2.65 kHz.     

基于多层石墨烯可饱和吸收体的被动调Q Ho∶YAG激光器

报道了2μm被动调Q的Ho∶YAG激光器,该激光器采用Tm~(3+)光纤激光器作为泵浦源,使用多层石墨烯作为可饱和吸收体。在连续波激光输出模式下,当泵浦功率为4.2 W时,获得了750 mW激光输出,输出激光中心波长为2.09μm,斜率效率为29.6%。在连续波激光器谐振腔中插入多层石墨烯可饱和吸收体并调整谐振腔,获得了脉冲激光输出。当泵浦功率为4.2 W时,获得最小脉冲宽度3.1μs、重复频率66.6 kHz的脉冲激光输出,其最大平均输出功率为170 mW,斜率效率为12.6%,光束质量因子M_x~2=1.15,M_y~2=1.12。     

A comparative study on diode-pumped single-frequency Tm:YAG and Tm:GdVO<Subscript>4</Subscript> lasers

In this paper, we present experimental results concerning on the laser characteristics of Tm:YAG laser and Tm: GdVO₄ laser. At room temperature, the maximum output power of Tm:YAG laser and Tm:GdVO₄ laser is 210 and 145 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:GdVO₄ laser, Tm:YAG laser can operate on single frequency with high power easily. As much as 60 mW of 2013.9 nm single-longitudinal-mode (SLM) laser was achieved for Tm:YAG laser. For Tm:GdVO₄ laser 51 mW of 1919.7 nm SLM laser was achieved. The SLM Tm:YAG laser is better for using as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Transient temperature profile in the gain medium of CW- and end-pumped passively Q-switched microchip laser

The transient temperature profile in CW- and end-pumped passively Q-switched (PQS) microchip laser is investigated qualitatively by treating the population inversion (thereby the thermal load) as the sawtooth function of the time. The numerical results reveal not only the dynamics of thermal buildup, but also the dependence of the quasi-steady-state temperature rise and the repetitively oscillatory amplitude on the incident pump power and the pulse repetition rate of PQS laser. The abruptly ascending branch of the repetitive temperature oscillation is synchronized with the pulsing stage of PQS laser. As the result, the abrupt temperature transition during the pulsing stage would introduce the fluctuation into the PQS pulse parameters (pulse energy, pulse width, and peak power) via temperature-dependent stimulated emission and thermal lensing effect.     

Spectroscopic Properties and Energy Transfers in Tm ~(3 ) and Yb~( 3 )/Tm ~( 3 ) Doped Fluoroaluminate Glass

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｔｈｅｔｒａｎｓｉｔｉｏｎ1 Ｇ4→ 3Ｈ6 (4 80ｎｍ)ｏｆＴｍ3 ｉｓｉｎｔｈｅｉｎｔｅｒｅｓｔｉｎｇｂｌｕｅｒｅｇｉｏｎ .Ｔｈｅｔｒａｎｓｉｔｉｏｎ3Ｆ4→ 3Ｈ4(～ 1.45 μｍ)ｏｆＴｍ3 ｅｘｈｉｂｉｔｓｃｏｎｓｉｄｅｒａｂｌｅｏｖｅｒｌａｐｗｉｔｈａｎａｂｓｏｒｐｔｉｏｎｂａｎｄｏｆＨ2 Ｏ ,ｓｏｉｔｃａｎｂｅａｐｐｌｉｅｄａｓａｕｓｅｆｕｌｓｏｕｒｃｅｆｏｒｗａｔｅｒｏｒｈｕｍｉｄｉｔｙｓｅｎｓｉｎｇ[1 ] .Ａｈｉｇｈ ｐｏｗｅｒ 1.45 μｍＴｍ3 ｄｏｐｅｄｆｉｂｅｒｌａｓ…     

Sr3Gd(PO4)3:Tm3+的真空紫外光谱特性

研究了Sr3Gd(PO4)3 : Tm3 和GdPO4 : Tm3 样品的结构特性、光谱特性.GdPO4 : Tm3 为单斜晶系,基质掺入铥离子后结构没有明显变化.GdPO4:Tm3 在164和210 nm附近有强烈的吸收峰.位于164 nm附近的强烈的吸收峰是归因于基质的吸收引起,210 nm附近的吸收峰则归因于Gd 的8S7/2-6GJ的能级跃迁.在164 nm真空紫外光激发下,样品于453及363 nm处有较强的发射峰,发射主峰位于453nm,属于Tm3 的1D2→3H4(22,123 cm-1)跃迁的典型发射.由于阳离子质量的不同,Sr3Gd(PO4)3:Tm3 在166 nm附近的激发峰高于GdPO4: Tm3 的同位置的激发峰,其在363 nm处的发射有明显减弱,而在453 nm处的蓝色发射有显著的增强.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

Spectroscopic Properties and Energy Transfers in Tm3+ and Yb3+/Tm3+ Doped Fluoroaluminate Glass

The mechanisms of Tm3+ →Tm3+ and Yb3+ Tm3+ energy transfers and fluorescence properties have been investigated in both Tm3+ and Yb3+/Tm3+ AYF glasses. The cross-relaxation process, 3F4 + 3H6 → 23H4, is proved, which makes the optimum Tm3+ concentration of 1.77 μm fluorescence(3H4 → 3H6) much higher than 1.45 μm fluorescence (3F4 → 3H4) in Tm3+ :AYF glasses. In Yb3+/Tm3+ :AYF glasses, the stronger concentration quenching of 476 nm emission than 797 nm emission is found under the 970 nm-excitation. The optimum concentration of Tma+ for 476 nm and 797 nm emission were about 0.1 mol-％ and 0.3～0.5 mol-％, respectively. The concentration quenching of Yba+ to upconversion fluorescence was also observed.     

Effect of temperature on spectroscopic features relevant to laser performance of YVO4:Tm3+, GdVO4:Tm3+, and LuVO4:Tm3+ crystals

Optical spectra and luminescence decay curves were measured for thulium-doped YVO(4), GdVO(4), and LuVO(4) single crystals as a function of temperature in the 300-670 K temperature region. In spite of structural similarity, the three systems studied display significantly different transition intensities and nonradiative relaxation rates. It was found, in particular, that the peak value of the pump band absorption intensity diminishes by about 30% for Tm:YVO(4) and Tm:GdVO(4), and the effective emission cross section for the laser transition of Tm(3+) diminishes by a factor of 2 roughly when temperature increases from 300 to 500 K. An unusually small quantum efficiency of the upper laser level in Tm:LuVO(4) has been derived from the analysis of luminescence decay curves.     

Fluorescence studies of the Er ↔ Ho and Er ↔ Tm energy transfer in erbium aluminum garnet

We have studied the flourescence characteristics of Ho³⁺ and Tm³⁺ in ErAlG:Ho, Tm and investigated the Er ? Ho and Er ? Tm energy transfer present in this system. In the infrared, the crystal ErAlG:Ho, Tm presents three groups of sharp lines (centered at ～18 000, ～19 300, and ～21 000 Å), whose intensities are strongly temperature-dependent. The first two groups are attributable to the Tm ³H₄ → ³H₆ transition, while the third group represents the Ho ⁵I₇ → ⁵I₈ transition. In YAlG:Er (50%), Ho(2%), only the Ho emission centered at ～21 000 Å is observed in the infrared. Under pulsed excitation, the emissions at ～17 900, ～19 000, and ～21 000 Å in ErAlG:Ho, Tm present a double exponential decay; the time dependences of the decays of the first two emissions are essentially the same; however, the 19 000 and 21 000 Å emissions present different decay patterns. In YAlG:Er (50%), Ho (2%), on the other hand, the decay of the 21 000 Å emission is purely exponential at all temperatures studied. The above results for ErAlG:Ho, Tm are explained by means of a rate-equation model in which the Ho → Er and Tm → Er transfer are treated as activation-type processes which effect a coupling between (1) the Ho and Tm ions, and (2) the Ho or Tm ions and quenching impurities.     

苯基羧甲基亚砜体系中高氯酸铥对高氯酸铽的荧光增强效应研究

合成了不同摩尔比的苯基羧甲基亚砜高氯酸铽、铥异核配合物 ,对配合物进行了组成分析 ,确定了配合物组成为 (Tb1 -xTmx) L2 (ClO4 ) ·2H2 O(x=0 0 0 0～ 0 2 0 0 ,L=C6 H5SOCH2 COO- )。通过IR光谱及摩尔电导的测定推测了配位情况 ,溶解性实验表明配合物在乙醇、丙酮等极性溶剂中具有很高的溶解性。荧光光谱实验表明 :当 x =0 0 0 1～ 0 10 0时铥对铽的荧光均产生敏化增强效应 ,当x =0 0 0 1时敏化强度最大 ,可使Tb3+ 荧光强度增加 32 6 %。     

High-power diode-end-pumped Tm：YAP and Tm：YLF slab lasers

Diode-end-pumped continuous-wave(CW) Tm:YAP and Tm:YLF slab lasers are demonstrated. The a-cut Tm:YAP and Tm:YLF slabs with doping concentrations of 4 at.-% and 3.5 at.-%,respectively,are pumped by fast-axis collimated laser diodes at room temperature. The maximum CW output powers of 72 and 50.2 W are obtained from Tm:YAP and Tm:YLF,respectively,while the pump power is 220 W,corresponding to the slope efficiencies of 37.9% and 26.6%,respectively.     

Diode-pumped laser performance of Tm:Sc_2SiO_5 crystal at 1971 nm

The 4-at.% Tm:Sc_2SiO_5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave(CW) laser output of(100)-cut Tm:SSO with the dimensions of 3 mm×3 mm×3 mm under laser diode(LD)-pumping is realized. The full width at half maximum(FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW.     

Comparative study of pulsed laser diode end-pumped thulium-doped 2-µm Q-switched lasers

We report pulsed laser diode(LD)end-pumped acoustic Q-switched Tm:YAG laser,Tm:LuAG laser,and Tm:LuYAG laser and the physical properties and spectra of Tm:YAG,Tm:LuAG,and Tm:LuYAG are analyzed.The Tm:LuYAG laser is pumped by 785-nm and 788-nm pulses separately,and is compared with Tm:YAG laser.Different output energy values and output wavelengths of Tm:LuAYG lasers pumped by LDs with different wavelengths are obtained and compared with each other.When the repetition frequency is 100 Hz,the pulsed Tm:YAG laser has single pulse energy of 15.9 mJ,pulse width of 126.7 ns,and the center wavelength of 2013.36 nm,and the pulsed Tm:LuAG laser possesses single pulse energy of 11.8 mJ,pulse width of 252.4 ns,and the center wavelength of 2023.65 nm,and the pulsed Tm:LuYAG laser output energy values are 12.32 mJ and 12.25 mJ with the slope efficiencies of 12.5%and 11.85%,the center wavelengths of 2017.89 nm and 2027.11 nm,respectively,while the pump sources are 785-nm and 788-nm pulsed LDs,respectively.     

Highly-Efficient Ho:S<Subscript>i</Subscript>Sc<Subscript>2</Subscript>O<Subscript>5</Subscript> Laser Pumped by a Narrow Line-Width Tm:YAP Laser at 1.94 <Emphasis Type="Italic">μ</Emphasis>m

We present a highly-efficient continuous-wave Ho:SSO laser pumped by a diode-pumped Tm:YAP laser with a narrow linewidth (NL) of 0.3 nm. With the free-running (FR) Tm:YAP laser, we obtain a maximum output power of 2.23 W at an absorption pump power of 7.2 W, corresponding to an optical conversion efficiency of 31% and a slope efficiency of 42.6%. With the NL Tm:YAP laser, we obtain a maximum output power of 2.88 W at the same absorption pump power. The optical conversion efficiency increases to 40% when the slope efficiency increases to 55.5%. The output linewidth of the Ho:SSO laser is 0.8 nm when we use the Tm:YAP laser with a narrow linewidth of 1.8 nm pumped by a FR Tm:YAP laser. The beam quality also changes from 1.31 to 1.22.     

Energy transfer and mid-infrared luminescence properties of Tm3+ /Dy3+ codoped chalcohalide glasses

A series of chalcohalide glasses based on the composition 0.9 (Ge25 Ga5 S70)-0.1CsI doped with the different Tm3+ / Dy3+ ions ratio were synthesized by melt-quenching technique. The absorption spectra, and mid-infrared fluorescence of different glass samples under 800 nm laser excitation were measured. The results prove that, Tm3+ is an efficient sensitizer, which can enhance the Dy3+ : 2.9 microm fluorescence intensity significantly. A decrease in the intensity of 1.8 microm fluorescence and lifetimes of the Tm3+ : (3)F4 level occurred with increasing the concentration of Dy3+ ions from 0 to 1 Wt% where Tm3+ concentration was fixed to 0.5 Wt%. Also a wide spectral overlap between Tm+ : 1.8 microm emission and the absorption of Dy3+ : 6 H(15/2) --> (6)H(11/2) showed that the effective energy transfer between the two rare-earth ions was mainly attributed to the resonance energy from Tm3+: (3)F4 to Dy(3)+ : (6)H(11/2) level.     

ZnS:Tm薄膜电致发光的激发过程

利用电子束蒸发方法制得ITO-Y2O3-ZnS:Tm3+-Y2O3-Al结构的薄膜可以得到蓝色电致发光.本文首次报导了ZnS:Tm3+薄膜与ZnS:Er3+、ZnS:Tb3+薄膜电致发光的激发过程有所不同.Tm3+离子的激发可以通过某些杂质中心到Tm3+离子的能量传递来实现.     

LaOBr中Ce—Tb、Tm—Er间能量传递的光声光谱和光致发光研究

本文首次报导了发光材料中两个不同稀土离子间能量传递的光声光谱研究。测量了LaOBr:Tb,Ce和LaOBr:Er,Tm体系的光声光谱,结合它们的光致发光特性,讨论了Ce³⁺对Tb³⁺的敏化、Tm³⁺对Er³⁺的猝灭。基质中掺入两种不同稀土离子后光声光谱的变化进一步证实了它们间的能量传递都伴随着多声子过程。分析LaOBr:Er,Tm的光声光谱,对Er³⁺r的红光猝灭的机制提出了新的解释。     

氟氧化物玻璃陶瓷中高效低阈值的红色上转换发光现象

本文报道了一种Er3 + 和Tm3 + 共掺杂新的氟氧化物玻璃陶瓷材料中高效低阈值的红色上转换发光现象。材料组份为 6 5GeO2 2 5NaF 8 5BaF 0 5Tm2 O3 1Er2 O3 (mol% ) ,文中给出了样品的制备方法。在 978nmLD激发下 ,观察到了非常强的红色上转换发光。据我们所知 ,在如此低的Er3 + 和Tm3 + 掺杂浓度下实现了如此之强的红色上转换发光 ,文献中未见报道 ;更令人惊奇的是在 2 0 0mA工作电流 (此时功率为 3 5mW )LD激发下 ,激发的功率密度为 170mW·cm-2 ,其红色光仍裸眼可见。讨论了这种高效低阈值上转换发光的机理。研究了LD的工作电流与上转换发光强度的关系     

YLiF4: Er3+, Tm3+, Yb3+中Tm3+浓度对上转换发光的影响

利用水热法合成了YLiF4: Er3 , Tm3 , Yb3 , 其中Er3 和Yb3 的浓度保持固定不变, 分别为1 mol%和1.5 mol%, Tm3 浓度变化范围是2 mol%～8 mol%. 在这种共掺杂体系中, 同时观察到了Er3 , Tm3 和Yb3 的吸收, 且Tm3 的吸收随着其浓度的增强而增强. 在980 nm光的激发下, 当Tm3 浓度很小时, 这种材料的上转换发光为白光. 其中蓝光主要来源于Tm3 的激发态1G4到基态3H6的跃迁, 绿光来源于Er3 的4S3/2和2H11/2到基态4I15/2的跃迁, 红光既来源于Tm3 的1G4→3F4的跃迁, 也来源于Er3 的4F9/2→4I15/2的跃迁. 并且这种上转换发光强度随着Tm3 浓度的增强而降低, 但对应不同能级跃迁的发光强度降低的幅度不同, 这是因为Er3 和Tm3 之间的相互作用.