基于微波透射法的金属薄膜方块电阻测量理论及其应用

依据矩形波导基模的场分布表达式和电磁边界条件,解析推导了插入金属薄膜后的矩形波导透射系数,建立了考虑介质衬底影响的金属纳米薄膜微波透射系数仿真计算方法及其方块电阻的微波测量方法.运用全波电磁仿真方法对金属纳米薄膜方块电阻的微波测量装置进行了仿真验证,结果表明透射系数幅度与方块电阻的对数之间呈线性关系.采用磁控溅射工艺分别在高阻硅和玻璃两种介质衬底表面制备了不同方块电阻值的银薄膜,并测量其微波透射系数.实测结果表明,提出的方法适用于方块电阻阻值为0.05—0.5?/square的金属薄膜.研究结果对于微纳制造领域的导电薄膜方块电阻表征具有参考价值.     

非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N2比例的关系.研究发现,随着载气中N2比例的增加,GaN薄膜方块电阻急剧增加.当载气中N2比例为50%时,GaN薄膜方块电阻达1.1×108Ω/□,且GaN表面平整,均方根粗糙度为0.233 nm.二次离子质谱分析发现,载气中N2比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N2比例的增加,GaN材料中螺型位错相关缺陷密度无明显变化,而刃型位错相关缺陷密度明显增加.结果表明,刃型位错的受主补偿作用是导致GaN薄膜方块电阻变化的主要原因.     

非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N₂比例的关系.研究发现,随着载气中N₂比例的增加,GaN薄膜方块电阻急剧增加.当载气中N₂比例为50%时,GaN薄膜方块电阻达1.1×10⁸Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N₂比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N₂比 关键词： 半绝缘GaN薄膜 载气 金属有机气相外延 位错     

二氧化钒薄膜的低温制备及其性能研究

针对VO₂薄膜在微测辐射热计上的应用，采用射频反应溅射法，在室温下制备氧化钒薄膜；研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压，先获得成分接近VO₂的非晶化薄膜，再在400℃空气中氧化退火，便可制得高电阻温度系数，低电阻率的VO₂薄膜，电阻温度系数约为-4%/℃，薄膜方块电阻为R_□为100—300kΩ；薄膜在室温下沉积，400℃下退火的制备方法与微机电加工(micro electromechanic 关键词： 二氧化钒 电阻温度系数 氧分压 射频反应溅射法     

纳米VOx薄膜在空气中的电学特性退化研究

采用射频磁控溅射法在氮化硅衬底上沉积纳米VO_x薄膜,利用X射线衍射、原子力显微镜分别对薄膜的结晶形态及表面形貌进行表征.研究了纳米VO_x薄膜在空气中长时间暴露后的方块电阻、热滞回线等电学特性的变化情况,并分析这些变化给器件带来的影响.利用X射线光电子能谱仪、傅里叶变换红外光谱仪分析对比新制与久置薄膜的组分及分子结构差异.研究表明,暴露在空气中的纳米VO_x薄膜方块电阻增大是因为低价钒离子被吸附氧原子氧 关键词： x薄膜')" href="#">纳米VO_x薄膜 磁控溅射 电学特性 退化     

透明导电ZnO薄膜的电化学制备及性能研究

以修饰的ITO玻璃为衬底,以不同浓度Zn(NO3)2.6H2O作为电解质溶液,采用阴极恒流沉积法制备了不同纳米结构的ZnO薄膜。用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、四探针仪(RTS-8)、紫外-可见(UV-Vis)光谱仪、循环伏安等分别表征薄膜的晶相、形貌和厚度、方块电阻、紫外-可见光透过率和氧化还原电位。结果表明:低浓度溶液沉积得到的c轴取向1D ZnO纳米柱和高浓度溶液沉积得到的致密2D六方ZnO纳米片在可见光范围(400～900 nm)的透过率均可高达85%以上,方块电阻约为14.5Ω/□。两种结构的氧化还原电位有显著区别,纳米柱的为-0.54 V(vs.SCE),而纳米片的为-0.72 V(vs.SCE),说明纳米片状的ZnO薄膜具有更为良好的化学稳定性。     

锡薄膜等温氧化研究

采用电子束蒸发制备金属锡薄膜,将其在250—400℃温度范围内进行等温氧化,研究锡薄膜的热氧化动力学机制.采用台阶仪、扫描电子显微镜、俄歇电子能谱仪和X射线衍射仪等方法研究锡薄膜氧化过程中厚度、组分、结构等演变.实验结果表明,在250—400℃温度范围内,锡膜氧化后氧化层按抛物线规律生长;转变活化能为0.34eV;锡膜氧化受到氧扩散机制的控制.研究得到氧化层的生长首先从形成SnO相开始,随着氧化的深入,SnO相分解形成Sn₃O₄相,最后转变为SnO_{2< 关键词：}     

Cu/SiO2/Si(111)体系中Cu和Si的扩散及界面反应

室温下利用磁控溅射在p型Si(111)衬底上沉积了Cu薄膜. 利用X射线衍射和卢瑟福背散射分别对未退火以及在不同温度点退火后样品的结构进行了表征. 在此基础上，研究了Cu/SiO₂/Si(111)体系的扩散和界面反应. 实验结果表明：当退火温度高于450℃时出现明显的扩散现象，并且随着温度的升高，体系扩散现象会更加显著. 当退火温度低于450℃时没有铜硅化合物生成，当温度达到500℃时才有铜硅化合物生成. 关键词： 薄膜 扩散 界面反应 硅化物     

磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制     

原位退火温度对Mg_2Si薄膜结构及方块电阻的影响

采用磁控溅射法和原位退火工艺在钠钙玻璃衬底上制备Mg_2Si半导体薄膜.首先在钠钙玻璃衬底上依次溅射一定厚度的Si、Mg薄膜,冷却至室温后原位退火4h,在400~600℃退火温度下制备出一系列Mg_2Si薄膜样品.采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)对Mg_2Si薄膜样品的晶体结构和表面形貌进行表征,利用四探针测试仪测试薄膜样品的方块电阻,讨论了原位退火温度对Mg_2Si薄膜结构、表面形貌及电学性能的影响.结果表明,采用原位退火方式成功在钠钙玻璃衬底上制备出单一相的Mg_2Si薄膜,退火温度为550℃时,结晶度最好,连续性和致密性最强,方块电阻最小.这对后续Mg_2Si薄膜器件的设计与制备提供了重要的参考.     

Kinetics characterization of the oxidation of Cu thin films at low temperature by using sheet resistance measurement

Film sheet resistance measurement was developed to obtain the oxidation kinetics of Cu thin films in the nanometer range. Cu thin films with smooth and homogenous surfaces were prepared by vacuum evaporation. Oxidation behaviour of Cu thin films at low temperatures from 180 °C to 260 °C in dry air has been studied. The results show that oxidation of Cu thin film follows a parabolic rate law with a considerable low activation energy of 0.57 eV, which is much lower than that reported for bulk Cu and the thick film. The observed rapid oxidation phenomenon may be attributed to the fast diffusion mechanism dominated by the defect-related grain boundary diffusion in thin films. PACS 07.50.-e; 73.61.-r; 82.65.+r     

Selective electroplating of copper lines on pre-patterned tantalum oxide thin films

Direct selective metal deposition on semiconductors is of interest to electronic device technology, in particular for interconnects and Schottky devices. In this study, we investigate selective copper electrodeposition on patterned tantalum oxide thin films. Cyclic voltammetry studies show that thick tantalum oxide thin films have insulating properties while oxide films thinner than a critical value are semiconductors. Copper films electrodeposited on tantalum oxide thin films are known to form Schottky contacts. We demonstrate the formation of copper patterns on pre-patterned tantalum oxide films by a simple process: an insulating tantalum oxide film was grown electrochemically, the film was then mechanically scratched followed by mild oxidation to produce a thin tantalum oxide film inside the scratch. Based on the differential behavior of thin and thick tantalum oxide films, metal lines were electrodeposited selectively under formation of Schottky junctions. The process demonstrated in this paper is compatible to standard processes for semiconductor device fabrication while permitting flexible prototyping for research at small scales.     

Fast microwave-assisted synthesis of copper nanowires as reusable high-performance transparent conductive electrode

We report the microwave synthesis of copper nanowires (CuNWs) by using alkylamine-mediated approach. The aspect ratio of CuNWs of this study was two–fold compared to the previous microwave-assisted synthesis study. In addition, we showed that microwave synthesis could produce high aspect ratio CuNWs in a much shorter time compared to conventional method. Purification process of CuNWs was done via a simple and fast centrifugation method using water-hydrophobic organic solvent system. We also show the importance of purification process on the performance of the fabricated transparent conductive electrode (TCE) films. Purified CuNWs TCE showed a low sheet resistance of 35 Ω/sq with high transparency of 81% (at λ₅₅₀ nm). Furthermore, we demonstrated how the retreatment of acetic acid was able to assist CuNWs to regain its high conductivity even after five cycles of repetitive continuous oxidation process.     

纳米晶氧化锡薄膜的接触特性

在 Ar和 O2 气体中 ,基片温度在 15 0～ 40 0℃的条件下 ,用直流磁控溅射的方法可以制备纳米晶透明导电薄膜。实验利用 TL M模型测试了纳米晶 Sn O2 透明导电薄膜的方块电阻、单位面积薄膜的接触电阻和电极与薄膜的结合力随热处理温度的变化情况     

Study of structural and electrical properties of thin NiO<Subscript>x</Subscript> films prepared by ion beam sputtering of Ni and subsequent thermo-oxidation

Nickel oxide thin films were prepared by thermal annealing of thin Ni films (thickness ca 47?nm) deposited by ion beam sputtering. The thermal annealing was performed at 350 °C and 400 °C with elected time (1–7 hours) in a quartz furnace opened to air. During annealing the samples underwent structural changes, as well as changes of their electrical properties. The structural properties (surface morphology and occurrence of crystalline phases) were analyzed by the AFM and XRD methods, O and Ni depth concentration profiles by the NRA method, and electrical properties (sheet resistance) by the van der Pauw 4-point technique. The sheet resistance (R _S ) of the as-deposited sample was found to be 12.03 Ω/□; after open air thermal annealing at 350 °C for 1 h the value was found to be almost the same, 11.67 Ω/□. After 2 h of annealing, however, a sharp increase in the sheet resistance (R _S = 1.46 MΩ/□) was observed. At this stage the deposit formed largely oxidized Ni layer with a distinct polycrystalline structure. The sharp increase of sheet resistance was ascribed to the oxidation of the Ni layer, leaving only a smaller amount of isolated Ni particles unoxidized. Almost complete oxidation was found after 7 h of annealing at 350 °C. At 400 °C was almost complete oxidation recorded already after 1 h of annealing.     

Effect of laser-ablated copper nanoparticles on polymerization of 1,1,3,3-tetraphenyl-1,3-disilacyclobutane

We have studied the effect of copper nanoparticles produced by laser ablation on the ring-opening polymerization of 1,1,3,3-tetraphenyl-1,3-disilacyclobutane (TPDC). The particle size and distribution of laser-ablated, copper nanoparticles were controlled by laser-ablation conditions such as ambient pressure, laser fluence, and distance between target and substrate. Laser-ablated, copper nanoparticles induced polymerization of TPDC effectively, resulting in formation of poly(diphenylsilylenemethylene) (PDPhSM) thin films. The polymerization efficiency depended mainly on the particle size and the surface concentration of copper nanoparticles deposited on the TPDC films by laser ablation. No clear tendency was observed between oxidation of Cu nanoparticles and polymerization efficiency. This technique enables us to easily fabricate PDPhSM thin films and may become a new method for fabricating polymer–metal nanocomposites. PACS 81.05.Lg; 82.35.Np; 82.50.Hp     

On the impeded growth of oxide films on Si in N2O ambient

Growth kinetics of thin oxide films on silicon in nitrous oxide were investigated in the very early stage of the process. It was found that the resistance to oxidation reaches an almost stationary value for about 10 s at 1100 °C. The observation is explained by the incorporation of nitrogen atoms at the interface in the film, which impede the further growth. Received: 24 September 1998 / Accepted: 9 December 1998 / Published online: 24 March 1999     

同位素示踪法研究铜薄膜在水汽中的氧化传质机理

采用H¹⁶₂O/H¹⁸₂O接续氧化并结合同位素示踪方法,研究了铜薄膜在水汽中氧化的传质机理.将真空热蒸发制备的铜薄膜样品,分别在H¹⁶₂O,H¹⁸₂O中以及H¹⁶₂O/H¹⁸₂O接续进行氧化处理;利用X射线衍射(XRD)研究了氧化产物的形态和结构 关键词： 同位素示踪 短路扩散 铜薄膜 18₂O')" href="#">H¹⁸₂O     

Kinetics of the melting-dispersion process in copper thin films

The kinetics of a melting-dispersion process in copper thin films is investigated at different thicknesses of the films. It is shown that the film initially melts in local regions and then the melting front propagates over the sample. Melting of copper thin films of the same thickness can occur within different time periods depending on the temperature (from almost instantaneous melting at higher temperatures to melting proceeding over the course of a few hours at lower temperatures). The dependence of the activation energy for the melting-dispersion process on the film thickness is determined and explained in terms of hydrodynamics. The mechanism of the melting-dispersion process is considered.