He离子注入ZnO中缺陷形成的慢正电子束研究

在ZnO单晶样品中注入了能量为20—100keV、总剂量为4.4×10¹⁵cm^-2的He离子.利用基于慢正电子束的多普勒展宽测量研究了离子注入产生的缺陷.结果表明，He离子注入ZnO产生了双空位或更大的空位团.在400℃以下退火后，He开始填充到这些空位团里面，造成空位团的有效体积减少.经过400℃以上升温退火后，这些空位团的尺寸开始增大，但由于有少量的He仍然占据在空位团内，因此直到800℃这些空位团仍保持稳定.高于800℃退火后，由于He的脱附，留下的空位团 关键词： 慢正电子束 ZnO 离子注入 缺陷     

慢正电子技术在固体表面与界面研究中的应用

综述了慢正电子技术的发展以及从放射源β衰变发射出的慢正电子的慢化原理，概述了利用慢正电子技术研究固体薄膜表面和界面的基本原理和方法，并讨论了慢正电子束技术在固体薄膜表面和界面研究中的应用。     

外延生长La0.7Sr0.3MnO3薄膜厚度对缺陷影响的慢正电子分析

采用脉冲激光沉积方法在(LaAlO₃)_0:3(Sr₂AlTaO₆)_0:7衬底上外延生长了La_0.7Sr_0.3MnO₃薄膜,并采用慢正电子束方法分析了薄膜在不同厚度和不同退火气氛下参数S的变化. 分析表明,薄膜中包含两种机制引入的氧空位,分别是薄膜生长气氛中氧压偏低造成薄膜的氧缺乏和由于薄膜应变引入空位型缺陷. 当薄膜厚度较薄时,应变造成的晶格畸变化比较大,当薄膜的厚度大于11 nm时,薄膜的应变驰豫已经比较完全. 原位退火的样品中正电子主要是被氧缺乏引起的氧空位捕获. 在氧气中退火的样品,S随厚度的变化反映了应变对薄膜微结构的影响.     

正电子慢化体的研究和进展

正电子湮没技术是一种研究材料的微观缺陷和相变的灵敏工具,在通常的正电子谱仪中,正电子能量为MeV量级,在样品中注入深度比较学（－100μm）,主要研究材料体内的平均缺陷密度,慢正电子束方法把正电子的能量降低为keV量级（而且可以调节）,注入比较浅（－μm）,所以是研究表面缺陷的探测手段,正电子慢化体是产生慢正电子的关键设备,对其研究有重要意义,文章综述了慢化体研究的历史和现状,从物理概念出发介绍使正电子慢化的四种可能方法和当今慢化体的五种几何排列方法,其中应用最广泛的是钨慢化体和百叶窗式的排列方式,效率最高的是惰性气体固体慢化体,而加电场慢化体是有待开发的高效慢化体。     

慢正电子束流技术在金属/合金微观缺陷研究中的应用

正电子湮没谱学技术是研究材料微观结构非常有效的一种核谱学分析方法, 主要用于获取材料内部微观结构的分布信息, 特别是微观缺陷结构及其特性等传统表征方法难以获取的微观结构信息. 近年来, 在慢正电子束流技术快速发展的基础上, 正电子湮没谱学技术在薄膜材料表面和界面微观结构的研究中得到了广泛应用. 特别是该技术对空位型缺陷的高灵敏表征能力, 使其在金属/合金材料表面微观缺陷的形成机理、缺陷结构特性及其演化行为等研究方面具有独特的优势. 针对材料内部微观缺陷的形成、演化机理以及缺陷特性的研究, 如缺陷的微观结构、化学环境、电子密度和动量分布等, 正电子湮没谱学测量方法和表征分析技术已经发展成熟. 而能量连续可调的低能正电子束流, 进一步实现了薄膜材料表面微观结构深度分布信息的实验表征. 本文综述了慢正电子束流技术应用研究的最新进展, 主要围绕北京慢正电子束流装置在金属/合金材料微观缺陷的研究中对微观缺陷特性的表征和表面微观缺陷演化行为的应用研究成果展开论述.     

第2系列ZrO2(Y2O3)薄膜的慢正电子研究

用慢正电子技术研究了在溅射时不加偏压,衬底加热３００℃,纯Ａｒ气氛下制备的用Ｙ２Ｏ３稳定的ＺｒＯ２薄膜材料（简称ＹＳＺ薄膜）,发现了ＹＳＺ薄膜在不同深度处的缺陷分布情况,退火温度对ＹＳＺ薄缺陷影响,简要讨论了致密、优质ＹＳＺ薄的制备方法。     

北京慢正电子强束流磁场输运系统设计研究

针对基于北京正负电子对撞机的慢正电子强束流系统对输运磁场的设计要求,本文对不同规格的磁场输运线圈模型、长螺线管端口处磁场的补偿以及地磁场和弯管道对正电子束流的影响等进行了计算,提出适用于本系统传输慢正电子束流的输运磁场分布、补偿线圈、调整线圈的加工参数,计算表明,系统的总体磁场不均匀度小于10髎.实际运行束流测试表明,所设计的磁场系统能够很好的将慢正电子束流输运到约16m远的样品测量室,慢正电子束斑尺寸基本没有变化,满足慢正电子束流系统的设计要求.     

研究堆慢正电子源构建中的关键机理问题

研究堆慢正电子源是获得高强度慢正电子束流的有效方式,国际上己建成多座装置并获得广泛应用.与常规同位素慢正电子源相比,研究堆慢正电子源的物理过程复杂,影响末端束流强度的因素众多,对其进行深入研究与合理建模是未来在中国绵阳研究堆(CMRR)上构建慢正电子源的基础.本文厘清了研究堆慢正电子产生的关键过程与物理机理,建立了预测末端正电子束流强度的理论模型,找到了影响其末端强度的主要物理量:快正电子体产生率、慢化体有效表面积、慢化体扩散距离、慢正电子从表面被提取到靶环末端的效率、及束流系统提取效率.用多种实验结果对模型进行校验,包括多个同位素慢正电子源的效率测量值,以及PULSTAR研究堆慢正电子源测量结果,充分验证了模型正确性.根据模型对各物理量的影响因素进行了分析,找到了需着重关注的影响因素,对未来源/靶结构的设计给出建议.     

低剂量磷离子注入快速退火硅中的缺陷研究

本文对低剂量磷离子注入硅经快速热退火后的缺陷特性进行研究。600℃退火就能基本激活注入离子。800℃以下退火样品中的缺陷主要是离子注入形成的辐射损伤缺陷。800℃以上退火样品中存在位错缺陷。位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。1100℃退火样品中的缺陷浓度迅速增大,热应力在硅内部产生大量的滑移位错。 关键词：     

北京慢正电子强束流运行性能测试

慢正电子强束流采用高能脉冲电子束流轰击金属钽靶, 以产生正负电子对的方式提供正电子, 作为慢正电子束流方法学研究和薄膜材料缺陷研究的束流基础. 本文是在该装置实现运行后, 对慢正电子束流的强度、能散、形貌等运行性能的测试工作的介绍, 以及慢正电子湮没多普勒测量系统的调试和标准样品的测量结果.     

SIMION simulation of a slow pulsed positron beam

A new slow pulsed positron beam, including a positron source, a moderator, a chopper, a pre-buncher, a main-buncher and a sample chamber, etc, has been installed and tested. It is necessary to simulate the acceleration, transportation and space focusing of positrons to meet the needs of beam debugging and further positron annihilation experiments. The result from SIMION simulations shows that the radius of the focused positron beam is less than 5 mm, which is further confirmed in our practical debugging process.     

Helium/hydrogen synergistic effect in reduced activation ferritic/martensitic steel investigated by slow positron beam

Here, we investigated the irradiation defect in reduced activation ferritic/martensitic steels by slow positron beam. Three ion-irradiation experiments were carried out: (i) He²⁺ irradiation, (ii) H⁺ irradiation and (iii) He²⁺ irradiation followed by H⁺ irradiation, at temperature 450?°C. The presences of vacancy defects, represented by ?S_He+H parameter, induced by sequential irradiations was larger than the sum of defects, ?S_He parameter + ?S_H parameter, caused by single He ions and single H ions. The synergistic effect of He and H was confirmed clearly from the perspective of positron annihilation spectroscopy.     

Performance of the plugged-in 22Na based slow positron beam facility

The Beijing intense slow positron beam facility is based on the 1.3 GeV linac of Beijing ElectronPositron CoUider (BEPC) aiming to produce mono-energetic intense slow positron beam for material science investigation. The plugged-in 22Na based slow positron beam section has been newly constructed to supply continuous beam time for the debugging of positron annihilation measurement stations and improve the Beijing intense slow positron beam time using efficiency. Performance testing result of the plugged-in 22Na based slow positron beam facility are reviewed in this paper, with the measurement of the beam transport efficiency, the view of beam spot, the adjustment of beam position, the measurement of beam intensity and energy spread etc. included.     

GaN/SiC异质结的慢正电子研究

通过对不同生长厚度GaN/SiC(n-n)的慢正电子研究,发现在GaN/SiC的界面中存在大量各种缺陷并在界面两端形成两个不同方向的电场. 这些缺陷的产生和SiC衬底表面制备以及GaN和SiC不同的热膨胀系数有关. 而缺陷中大量的带状缺陷在界面中形成一个费米能级钉扎(Fermi level pinning),它的存在使界面中存在一定高度的势垒,导致在界面两端的一定区域内形成两个不同方向的电场. 用VEPFIT模拟该电场的存在,分四层(GaN/Interface/SiC1/SiC2)进行拟合,得到了很好的拟 关键词： 正电子湮没 缺陷 半导体     

Mesoporous titania films investigated by positron annihilation based on a slow positron beam

Tunable mesoporous titania (TiO₂) thin films were synthesized via a sol-gel method using an amphiphilic triblock copolymer F38 as the structural template. The dependence of crystalization, pore morphology and interconnectivity of TiO₂ films on the weight ratio of F38 was studied by wide-angle X-ray diffraction, field emission scanning electron microscopy and Doppler broadening of positron annihilation radiation spectroscopy based on a slow positron beam. By loading more F38, the crystallization of TiO₂ films is enhanced, accompanied by a decrement in oxygen vacancies/grain boundaries. Smaller and isolated mesopores are formed in the films prepared with F38 less than 15?wt%. The pore percolation occurs when the weight ratio of F38 is up to 20?wt% and larger and interconnected worm-like pores are formed.     

Development and application of the intense slow positron beam at IHEP

This paper describes the development and application of an intense slow positron beam at IHEP with regard to its two main components.The Variable-Energy Positron Lifetime Spectroscopy (VEPLS) based on the pulsing system consisting of a chopper,a prebuncher and a buncher has been constructed in order to meet the needs of materials science development.At present,the time resolution of the VEPLS can easily reach about 386 ps with a peak-to-background ratio of about 600:1.A plugged-in 22Na positron source section for adjusting the newly built experimental station and for increasing the beam operation efficiency has been constructed.A slow positron beam with an intensity of 2.5x105 e+/s and the beam profile whose diameter is 10 mm has been obtained;the moderation efficiency of the tungsten mesh moderator reaches 5.1x 10-4 as calculated with an original positron source activity of 52 mCi.     

Positron annihilation studies of mesoporous silica films using a slow positron beam

Positron annihilation lifetime spectra were measured for mesoporous silica films, which were synthesized using triblock copolymer (EO₁₀₆PO₇₀EO₁₀₆) as a structure-directing agent. Different positron lifetime spectra for the deposited and calcined films indicated the formation of meso-structure after calcination, which was confirmed by Fourier transform infrared (FTIR) spectra and field emission-scanning electron microscopy (FE-SEM) observation. Open porosity or pore interconnectivity of a silica film might be evaluated by a two-dimensional positron annihilation lifetime spectrum of an uncapped film. Pore sizes and their distributions in the silica films were found to be affected by thermal treatments.     

Impact of yttrium ion implantation on corrosion behavior of laser beam welded zircaloy-4 in sulfuric acid solution

In order to study the effect of yttrium ion implantation on the aqueous corrosion behavior of laser beam welded zircaloy-4 (LBWZr4), The butt weld joint of zircaloy-4 was made by means of a carbon dioxide laser, subsequently the LBWZr4 samples were implanted with yttrium ion using a MEVVA source at an energy of 40 keV, with a fluence range from 1 × 10¹⁶ to 4 × 10¹⁶ ions/cm² at about 150 °C. Three-sweep potentiodynamic polarization measurement was employed to evaluate the aqueous corrosion behavior of yttrium-implanted LBWZr4 in a 0.5 M H₂SO₄ solution. Scanning electron microscopy (SEM) was used to examine the surface topographic character of the yttrium-implanted LBWZr4 before and after the potentiodynamic polarization measurement. The valences of the carbon, yttrium, and zirconium in the surface layer were analyzed by X-ray photoemission spectroscopy (XPS). It was found that a significant improvement was achieved in the aqueous corrosion resistance of yttrium-implanted LBWZr4 compared with that of the un-implanted LBWZr4. The mechanism of the corrosion resistance improvement of the yttrium-implanted LBWZr4 is probably due to the addition of the yttrium oxide dispersoid into the zirconium matrix.     

Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing

In this experiment, nitrogen ions were implanted into CZ-silicon wafer at 100 keV at room temperature with the fluence of 5 × 10¹⁵ N₂⁺/cm², followed by rapid thermal processing (RTP) at different temperatures. The single detector Doppler broadening and coincidence Doppler broadening measurements on slow positron beam were carried out to characterize the defects in the as-implanted silicon and RTP-treated samples. It is found that both nitrogen-vacancy complexes (N-Vsi) and oxygen-vacancy complexes (O-Vsi) produced by nitrogen implantation diffuse back to the sample surface upon annealing. But the N-Vsi and the O-Vsi complete with each other and give a summed effect on positron annihilation characteristics. It is shown that the N-Vsi win out the O-Vsi in as-implanted sample and by RTP at 650 °C, 750 °C, which make the S-parameter increase; O-Vsi plays a dominant role after annealing above 850 °C, which makes the S parameter decrease.     

Annealing studies of Ti/Al multilayer film by slow positron beam

Single detector and coincidence Doppler broadening (CDB) spectroscopy measurements using slow positron beam were carried out to study as-deposited and annealed Ti/Al multilayer films. The changes of the film structure and defects in each layer by heat treatment have been investigated through the analysis of Doppler broadening lineshape variation. The coincidence Doppler broadening measurements revealed that Ti is the dominant diffusion species during the alloying process of Ti/Al by high temperature annealing. These results highlight the potential of slow positron beam in characterizing the vacancy-type defects evolution and mechanism of interlayer diffusion in Ti/Al multilayer film.