Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.     

Neutron single-particle structure of <Superscript>48</Superscript>Ca, <Superscript>50</Superscript>Ti, <Superscript>52</Superscript>Cr, <Superscript>54</Superscript>Fe,and <Superscript>56</Superscript>Ni nuclei

The change in the neutron single-particle structure of (1f?2p)-shell magic nuclei near the Fermi energy with an increase in the number of protons in the 1f _7/2 subshell from 0 for ⁴⁸Ca to 8 for ⁵⁶Ni has been investigated. Good agreement of the experimental and estimated values of the single-particle energies E _nlj of the bound states of neutrons in these nuclei with the results of calculations within the dispersive optical model is obtained.     

Stability of the polaron form of charge carrier localization in misfit titanium disulfide compounds

The behavior of the thermodynamic functions of the silver-intercalated isostructural misfit compounds Ag _x PbTi₂S₅ and Ag _x GdTi₂S₅ is studied. The region of instability of the homogeneous state, which is typical of materials with less than half-filled polaron band, is revealed in the phase diagram of Ag _x PbTi₂S₅. It is shown that the substitution of GdS for PbS gives rise to charge transfer to the TiS₂ sublattice, which fills the polaron band above the critical level and suppresses this instability. The behavior of the entropy of silver in both materials fits well the proposed polaron band filling model. It is demonstrated that the peak of the entropy near the boundary of stability of the homogeneous state is universal in character for materials with polaron-type carriers and that it can be associated with a strong variation in the density of states at the Fermi level upon polaron band filling.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Electron correlations and instability of a two-center bipolaron

The energy of a large bipolaron is calculated for various spacings between the centers of the polarization potential wells of the two polarons with allowance made for electron correlations (i.e., the explicit dependence of the wave function of the system on the distance between the electrons) and for permutation symmetry of the two-electron wave function. The lowest singlet and triplet 2³S states of the bipolaron are considered. The singlet polaron is shown to be stable over the range of ionic-bond parameter values η≤η_m≈0.143 (η=?_∞/?₀, where ?_∞ and ?₀ are the high-frequency and static dielectric constants, respectively). There is a single energy minimum, corresponding to the single-center bipolaron configuration (similar to a helium atom). The binding energy of the bipolaron for η → 0 is J_bp=?0.136512e⁴m^*/?²? _∞ ² (e and m* are the charge and effective mass of a band electron), or 25.8% of the double polaron energy. The triplet bipolaron state (similar to an orthohelium atom) is energetically unfavorable in the system at hand. The single-center configuration of the triplet bipolaron corresponds to a sharp maximum in the distance dependence of the total energy J_bp(R); therefore, a transition of the bipolaron to the orthostate (e.g., due to exchange scattering) will lead to decay of the bound two-particle state. The exchange interaction between polarons is antiferromagnetic (AFM) in character. If the conditions for the Wigner crystallization of a polaron gas are met, the AFM exchange interaction between polarons can lead to AFM ordering in the system of polarons.     

Messungen der Geschwindigkeitsabhängigkeit totaler Streuquerschnitte für Atom-Atom-Stöße im Energiebereich zwischen 6 und 1000 eV

The velocity dependence of the total scattering cross sectionQ(v) for fast Cs, K, and Na beams scattered by Xe, Kr, and Ar has been measured for energies of 6 to 1000 eV. In all cases, the transition region between thev ^?2/5-dependence ofQ(v) (where the cross section is predominantly influenced by the attractive part of the potential) and the high energy behaviour (where the cross section is determined by the repulsive part of the potential) is observed. Values for the product?r _m of the potential well depth? and the equilibrium distancer _m are determined by comparing the measurements with calculations for a five parameter potential model.     

轨道Feshbach共振附近类碱土金属原子的杂质态问题

近年来,碱土金属原子和类碱土金属原子体系的研究成为冷原子物理的研究热点之一.特别是最近在~(173)Yb原子中发现的轨道Feshbach共振,使得研究有强相互作用的碱土金属和类碱土金属原子系统成为可能,极大扩展了此类原子体系的研究范围.本文介绍了~(173)Yb费米气体在轨道Feshbach共振附近的杂质态问题.在此问题中,位于~3P0态的杂质原子与处于基态的背景费米海相互作用,并在费米海表面产生分子态或极化子态.本文使用试探波函数的研究方法,首先对分子态和吸引极化子态进行介绍,并重点描述了分子态与吸引极化子态间的转变.其次归纳总结了排斥极化子态的相关性质,如有效质量、衰变率等.然后考虑双费米面情况,介绍在闭通道中引入另外一个费米面对系统产生的影响.最后简要介绍二维~(173)Yb费米气体中的杂质态问题.     

Evolution of spin susceptibility from the Pauli to Curie-Weiss type in strongly correlated Fermi systems

The magnetic properties of strongly correlated Fermi systems are studied within the framework of the fermioncondensation model—phase transition associated with the rearrangement of the Landau quasiparticle distribution, resulting in the appearance of a plateau at T=0 exactly in the Fermi surface of the single-particle excitation spectrum. It is shown that the Curie-Weiss term ～T^?1 appears in the expression for the spin susceptibility χ_ac(T) of the system after the transition point at finite temperatures. The behavior of χ_ac(T, H) as a function of temperature and static magnetic field H in the region where the critical fermion-condensation temperature T _f is close to zero is discussed. The results are compared with the available experimental data.     

Effect of the orbital structure and symmetry of electronic states on nonradiative <Emphasis Type="Italic">S-T</Emphasis> intersystem crossing: Dibenzofuran

The nonradiative S-T intersystem crossing S ₁(ππ*) ? T ₁(ππ*) in dibenzofuran (DB(O)) molecules has been theoretically investigated within the model of vibronically induced spin-orbit (VISO) coupling of electronic states, where the vibronic perturbation takes into account all out-of-plane vibrational modes of a molecule. It is established that the S-T intersystem crossing S ₁(¹ A ₁) ? T ₁(³ B ₂) involves also the intermediate (T _m )T ₂(³ A ₁) and T ₃(³ B ₂) triplet states. The calculated rate constant K _ST = (4.5–4.7) × 10⁷s^?1 of the nonradiative transition is in agreement with the known experimental data. The manifestation of approximate (belonging to the D _2h group) symmetry of singlet and triplet molecular states in VISO couplings has been studied. An effect of the heavy (oxygen) atom of a DB(O) molecule on K _ST is established.     

Phase behaviors of strongly correlated Fermi gases in one-dimensional confinements

We report on the ground state of models for strongly correlated one-dimensional Fermi systems by means of theoretical studies of two-component atomic Fermi gases in highly anisotropic harmonic traps. In this context, we consider (i) the Gaudin-Yang model for a Luttinger liquid with repulsive interactions, including an analysis of the emergence of Wigner molecules in the 2k _F → 4k _F crossover, and (ii) the lattice Hubbard model yielding Luttinger liquid and Mott insulator or band-insulator phases for repulsive interactions and the Luther-Emery phase for attractive interactions, including in the former case an analysis of the role of disorder. Our calculations use novel versions of density and spin-density functional theory and a density-matrix renormalization-group technique. We also discuss preliminary results and future perspectives in the study of nonsymmetric two-component Fermi gases.     

Variable-range hopping conduction in LaMnO<Subscript>3 + δ</Subscript>

The temperature dependence of the electrical resistivity ρ(T) for ceramic samples of LaMnO_{3 + δ} (δ = 0.100–0.154) are studied in the temperature range T = 15–350 K, in magnetic fields of 0–10 T, and under hydrostatic pressures P of up to 11 kbar. It is shown that, above the ferromagnet-paramagnet transition temperature of LaMnO_{3 + δ}, the dependence ρ(T) of this compound obeys the Shklovskii-Efros variable-range hopping conduction: ρ(T) = ρ₀(T)exp[(T ₀/T)^1/2], where ρ₀(T) = AT ^9/2 (A is a constant). The density of localized states g(?) near the Fermi level is found to have a Coulomb gap Δ and a rigid gap γ(T). The Coulomb gap Δ assumes values of 0.43, 0.46, and 0.48 eV, and the rigid gap satisfies the relationship γ(T) ≈ γ(T _v)(T/T _v)^1/2, where T _v is the temperature of the onset of variable-range hopping conduction and γ(T _v) = 0.13, 0.16, and 0.17 eV for δ = 0.100, 0.125, and 0.154, respectively. The carrier localization lengths a = 1.7, 1.4, and 1.2 Å are determined for the same values of δ. The effect of hydrostatic pressure on the variable-range hopping conduction in LaMnO_{3 + δ} with δ = 0.154 is analyzed, and the dependences Δ(P) and γ_v(P) are obtained.     

Charge transfer over localized states in a TlS single crystal

It is revealed that TlS single crystals exhibit a variable range hopping conduction along a normal to their natural layers at temperatures T ≤ 230 K in a dc electric field and a nonactivated hopping conduction at low temperatures in strong electric fields. Estimates are made for the density of states near the Fermi level (N _F = 2.8 × 10²⁰ eV^?1 cm^?3 and their energy spread (ΔW = 0.02 eV), the localization radius (a = 33 Å), the average jump distance in the region of activated (R _av(T) = 40 Å) and nonactivated (R _av(F) = 78 Å) hopping conduction, and also the drop in the charge carrier potential energy along the jump distance in an electric field F: eFR = 0.006 and 0.009 eV at F = 7.50 × 10³ and 1.25 × 10⁴ V/cm, respectively.     

Frequency dispersion of dielectric coefficients of layered TlGaS<Subscript>2</Subscript> single crystals

Frequency dependence of the dissipation factor tanδ, the permittivity ɛ, and the ac conductivity σ_ac across the layers in the frequency range f=5×10⁴−3×10⁷ Hz was studied in layered TlGaS₂ single crystals. A significant dispersion in tanδ was observed in the frequency range 10⁶−3×10⁷ Hz. In the range of frequencies studied, the permittivity of TlGaS₂ samples varied from 26 to 30. In the frequency range 5×10⁴−10⁶ Hz, the ac conductivity obeyed the f ^0.8 law, whereas for f>10⁶ Hz σ_ac was proportional to f ². It was established that the mechanism of the ac charge transport across the layers in TlGaS₂ single crystals in the frequency range 5×10⁴−10⁶ Hz is hopping over localized states near the Fermi level. Estimations yielded the following values of the parameters: the density of states at the Fermi level N _F=2.1×10¹⁸ eV⁻¹ cm⁻³, the average time of charge carrier hopping between localized states τ=2 μs, and the average hopping distance R=103 ?. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 6, 2004, pp. 979–981. Original Russian Text Copyright ? 2004 by Mustafaeva.     

Searching for Exotic States with b and c Quarks in D0 Experiment

The latest results of searching for exotic multiquark states with heavy quarks obtained in the D0 experiment (Fermi National Accelerator Laboratory, USA) are presented. In particular, the evidence of existence of a possible four-quark state X(5568) → B _s ⁰ π^±in the cases with hadronic and semileptonic decay channels of B _s ⁰ meson is considered, as well as the results of searching for the five-quark states in the J/ψΛ system.     

Fractal dimension study of polaron effects in cylindrical GaAs/Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>As core–shell nanowires

Polaron effects in cylindrical GaAs/Al _x Ga_1-xAs core–shell nanowires are studied by applying the fractal dimension method. In this paper, the polaron properties of GaAs/Al _x Ga_1-xAs core–shell nanowires with different core radii and aluminum concentrations are discussed. The polaron binding energy, polaron mass shift, and fractal dimension parameter are numerically determined as functions of shell width. The calculation results reveal that the binding energy and mass shift of the polaron first increase and then decrease as the shell width increases. A maximum value appears at a certain shell width for different aluminum concentrations and a given core radius. By using the fractal dimension method, polaron problems in cylindrical GaAs/Al _x Ga_1-xAs core–shell nanowires are solved in a simple manner that avoids complex and lengthy calculations.     

Dependence of the upper critical field on the defect concentration in MgB<Subscript>2</Subscript> and the electronic structure parameters

The upper critical field H _c 2 (H ‖ c) of the two-band superconductor MgB₂ is studied as a function of the residual resistivity ρ_n. It is found that the superconductor follows the standard trend: the slope-dH_c2/dT of the temperature dependence of H_c2(T) increases with the number of defects. The upper critical field in the clean limit is found, and direct estimations of the parameters of carriers in the 2D σ band (including the Fermi velocity and the coherence length) are made. The contribution of the electron scattering to the magnitude of H_c2 is determined, and the mean free path of electrons in samples with various defect concentrations is estimated. The density of states of σ electrons at the Fermi level is calculated using the dependence of the slope-dH_c2/dT on ρ_n and a band structure model. It is impossible to estimate this density of states directly, because the upper critical field is determined by the carriers of one band, whereas the resistivity depends on the carriers in both bands.     

Unconventional superconductivity in low density electron systems and conventional superconductivity in hydrogen metallic alloys

In this short review, we first discuss the results, which are mainly devoted to the generalizations of the famous Kohn–Luttinger mechanism of superconductivity in purely repulsive fermion systems at low electron densities. In the context of repulsive-U Hubbard model and Shubin–Vonsovsky model we consider briefly the superconducting phase diagrams and the symmetries of the order parameter in novel strongly correlated electron systems including idealized monolayer and bilayer graphene. We stress that purely repulsive fermion systems are mainly the subject of unconventional low-temperature superconductivity. To get the high temperature superconductivity in cuprates (with T_C of the order of 100 K) we should proceed to the t–J model with the van der Waals interaction potential and the competition between short-range repulsion and long-range attraction. Finally we note that to describe superconductivity in metallic hydrogen alloys under pressure (with T_C of the order of 200 K) it is reasonable to reexamine more conventional mechanisms connected with electron–phonon interaction. These mechanisms arise in the attractive-U Hubbard model with static onsite or intersite attractive potential or in more realistic theories (which include retardation effects) such as Migdal–Eliashberg strong coupling theory or even Fermi–Bose mixture theory of Ranninger et al. and its generalizations.     

Impact of pairing on the heat capacity of systems with an isolated level bunch near the Fermi surface

Canonical heat capacity vs. the temperature for systems with an isolated level bunch near the Fermi surface is calculated using exact eigenvalues of the effective Bardeen–Cooper–Schrieffer Hamiltonian (H _BCS). Two degenerate levels separated by energy spacing Δε in spherical systems can produce two maxima in C at low values of G/Δε, where G is the pairing strength of H _BCS. These two maxima become one as G/Δε grows and the system deforms.     

Multivariate pressure effects on an electron hopping process in ferroelectric KTa<Subscript>1−x</Subscript>Nb<Subscript>x</Subscript>O<Subscript>3</Subscript>

The effect induced by the presence of a polaron related relaxation process on the dielectric properties of a ferroelectric KTa_1?x Nb _x O₃ (KTN) crystal was investigated (10^-2?10⁶ Hz, at 300?375 K) using broadband dielectric spectroscopy. Characterization of the process using just the standard frequency domain dielectric parameters can nonetheless provide penetrating insight into its nature and origins. The three parameters, namely: relaxation time (τ), Cole-Cole loss broadening (α), and dielectric strength (Δ?) provide each one in its own way, much useful and often overlooked information. The Activation Energy along with the Meyer-Neldel dependance, both extracted from τ serve to illuminate the dynamic properties. At the same time, α and especially the combined α(lnτ) relationship, expose the fractal structure of the underlying landscape. Finally, the static parameter Δ?, enables quantification of the dipolar correlations. Hydrostatic pressure (up to 7.5 kbar) was applied to gently perturb the system and observe the outcome on all of the various parameters. This additional degree of freedom allows for a much more comprehensive exploration of the phase space behavior of the system.     

Anomalous thermopower in heavy-fermion compounds CeB<Subscript>6</Subscript>, CeAl<Subscript>3</Subscript>, and CeCu<Subscript>6 − <Emphasis Type="Italic">x</Emphasis></Subscript>Au<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

High-precision measurements of thermopower have been performed in a wide temperature range (2–300 K) for a series of cerium-based heavy-fermion compounds, including CeB₆, CeAl₃, CeCu₆, and substitutional solid solutions of the CeCu_{6 ? x} Au _x system (x = 0.1, 0.2). All compounds exhibit an unusual (logarithmic) asymptotic behavior of the temperature dependence of the Seebeck coefficient: S ∝ ?lnT. In the case of cerium hexaboride, this anomalous behavior of S(T) is accompanied by the appearance of weak-carrier-localization-mode asymptotics in the conductivity (σ(T) ∝ T ^0.39), while the paramagnetic susceptibility χ(T) and the effective mass of charge carriers m _eff(T) vary according to a power law (χ(T), m _eff(T) ∝ T ^?0.8) in the temperature interval T = 10–80 K. This behavior corresponds to renormalization of the density of states at the Fermi level. The observed anomalous behavior of thermopower in CeB₆ and other cerium-based intermetallic compounds is attributed to the formation of heavy fermions (many-body states in the metal matrix) at low temperatures.