Charge density of Ga<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sb

Charge density calculations and electronic band structures for Ga _x Al_{1 − x} Sb with x = 1.0, 0.5 and 0.0 are presented in this work. The calculations are performed using the empirical pseudopotential method. The charge density is computed for a number of planes, i.e. z = 0.0, 0.125 and 0.25 A ₀ by generating the potential through a number of potential parameters available in the literature. The virtual crystal approximation was applied for the semiconducting alloy. The characteristics of the band structure and charge density are observed to be affected by the potential parameters. Calculated band gaps and the nature of gaps are in good agreement with the experimental data reported. The ionicity is also reasonably in good agreement with other scales proposed in the literature; however the formulation needs to be improved. The present work also demands indirect experimental band gap for the alloy.      

Metallic-like conductivity of asymmetric <Emphasis Type="Italic">p</Emphasis>-In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As quantum wells

The temperature dependence of the conductivity of the two-dimensional hole gas in an asymmetric GaAs/In _x Ga_{1 ? x} As/GaAs quantum well has been investigated. It is shown that fast spin relaxation leads to metallic-like behavior of the temperature dependence of the conductivity.     

Effects of hydrostatic pressure and temperature on electronic band parameters in Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As

Influence of hydrostatic pressure and temperature on electronic band parameters for zinc-blende Al_xGa_1–xAs was investigated by means of pseudopotential calculations. The agreement between our results and the available experimental data is generally satisfactory. Our results showed that the effect of pressure leads to a decrease of the crossing point and the optical bowing parameter. However, the temperature effect was found to be insignificant on both crossing point and bowing parameter.     

The theory and experiment of very-long-wavelength 256×1 GaAs/Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As quantum well infrared detector linear arrays

The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λ _P = 14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at V _B = 3 V and T = 45 K has the responsibility 4.28×10⁻² (A/W), the blackbody detectivity D _b* = 5.14×10⁹ (cm·Hz^1/2/W), and the peak detectivity D _λ * = 4.24× 10¹⁰ (cm·Hz^1/2/W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA N _ef of 99.2%, the average responsibility (V/W) of 3.48×10⁶ (V/W), the average peak detectivity D _λ * of 8.29×10⁹ (cm·Hz^1/2/W), and the non-uniformity U_R of 5.83%. This device is ready for the thermal image application. Supported by the National Natural Science Foundation of China (Grant No. 10374095)     

Strain accumulation in InAs/In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As quantum dots

The effect of strain accumulation in the InAs/In _x Ga_1−x As quantum dots (QDs) system was studied in this work. We found strain in the In _x Ga_1−x As layer with accumulation in the QD layer. This effect resulted in a dramatic reduction of growth-mode transition thickness of the QD layer. For InAs/In_0.25Ga_0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved.     

Strain accumulation in InAs/In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As quantum dots

The effect of strain accumulation in the InAs/In _x Ga_1−x As quantum dots (QDs) system was studied in this work. It was found that strain in the In _x Ga_1−x As layer accumulation in the QD layer. This effect resulted in a dramatic reduction of growth mode transition thickness of the QD layer. For InAs/In_0.25Ga_0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved.     

X-ray spectra and electronic band structure of nitrogen in Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>N solid solid solutions

The electronic energy structure of the valence band and the x-ray absorption near edge structure (XANES) region of nitrogen in Al _x Ga_1?x N solid solutions and binary crystals of gallium nitride GaN and aluminum nitride AlN are calculated using the local coherent potential method and the cluster version of the muffin-tin approximation within the framework of the multiple scattering theory. It is demonstrated that the calculated electron densities of states correlate with the nitrogen K x-ray emission and nitrogen K x-ray absorption spectra. The electronic energy structure of the top of the valence band and the XANES region in Al _x Ga_1?x N solid solutions are compared with those in the binary crystals of the GaN and AlN nitrides, and an interpretation of their specific features is proposed. An analogy is drawn between the evolution of the electronic energy structure of the valence band and the XANES region in the alloys under investigation and the evolution of the electronic band structure in the Al _x B_1?x N and B _x Ga_1?x N alloys. General trends in the transformation of the structure and variations in properties of these alloys are discussed.     

Magnetostriction of Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>S (<Emphasis Type="Italic">x</Emphasis> = 0.27) crystals

The magnetostriction of Fe _x Mn_{1 − x} S (x = 0.27) single crystals in strong magnetic fields up to 120 kOe has been investigated. It has been found that the magnetostriction reaches colossal values (±3 × 10⁻⁴) atypical of compounds of 3d elements. It has been found that the magnetostriction changes sign when varying temperature and magnetic field; this behavior indicates an important role of the spin-phonon interactions in the formation of the magnetic order in solid solutions of iron-manganese sulfides.     

High-temperature study of SrFe<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mo<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>3−<Emphasis Type="Italic">z</Emphasis></Subscript> perovskites

The structure of high-temperature SrFe_{1 − x} Mo _x O_{3 − z} (0 ≤ x ≤ 0.5) phases was studied. Such studies are necessary to understand the mechanism of oxygen transport in membrane materials used for high-temperature oxygen separation.     

Spin glass effects in Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>S solid solutions

The magnetization, resistance, permittivity, and thermal expansion coefficient of cation-substituted sulfides Co _x Mn_{1 ? x} S have been measured. The relationship between the magnetic, electric, and elastic subsystems of Co _x Mn_{1 ? x} S solid solutions is established and the features of physical properties characteristic of multiferroics, induced by orbital-charge ordering, are found.     

The band structures of BSb and B<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Sb alloys

The band structures of BSb and B _x Ga_1−x Sb alloys are studied using first-principles calculations in the generalized gradient approximation. By SQS-8 supercells to model a random alloy, the direct transition energy-gap (Γ _15v−Γ _1c) bowing of 3.0 eV is obtained for B _x Ga_1−x Sb alloys in x = 0–50%, in x = 0–11% the energy-gap is the band-gap and increases by 7 meV/%B with boron composition increasing; by SQS-16 supercells the bowing parameter is about 1.9 eV in x = 0–12.5%. The formation enthalpies of mixing, ΔH, are calculated for B _x Ga_1−x As and B _x Ga_1−x Sb alloys. A comparison of enthalpies indicates that B _x Ga_1−x Sb films with boron composition of 7% may be possible. Supported by the National Natural Science Foundation of China (Grant No. 10774031) and the Guangdong Provincial Natural Science Foundation (Grant No. 07001790)     

Electronic structure and ground state parameters of Ru<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">Me</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al refractory alloys

The electronic structure and ground state parameters of B2 RuAl-based refractory alloys have been investigated in the framework of the density functional theory using the exact muffin-tin orbital method in combination with the coherent potential approximation. It has been demonstrated that the number of states at the Fermi level for the Ru_{1 − x} Me _x Al alloys as a function of the alloying metal content has a minimum, which indicates a change in the Fermi surface topology and the presence of specific features in the behavior of elastic constants. It has been concluded that the electronic structure of the alloys can be described in terms of the rigid band model. The nonlinear variations of the lattice parameters of the alloys has been explained.     

Phenomenological description of strain relief in step-graded metamorphic buffer layers based on In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As ternary solutions

Spatial distributions of the residual elastic strains in layers of step-graded metamorphic buffers of two different designs, grown via molecular beam epitaxy on the basis of In _x Al_{1 ? x} As ternary solutions, are obtained by means of reciprocal space mapping. It is shown that with allowance for work hardening, which affects strain relief in buffer layers and increases the strain in dislocation-free layers, the mechanism of strain relief in the final buffer steps, and the residual elastic strain in a buffer dislocation-free layer, are governed by the same phenomenological law as in a single-layer heterostructure.     

Magnetocapacitance effect in Gd<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>S

The capacitance and dielectric loss tangent of Gd_xMn_1–xS (x ≤ 0.2) solid solutions have been measured at a frequency of 10 kHz without magnetic field and in a magnetic field of 8 kOe in the temperature range of 90–450 K. An increase in the permittivity and a dielectric loss maximum have been detected in the low-temperature region. It has been found that the temperature of the maximum of the imaginary part of the permittivity shifts to higher temperatures with increasing concentration. The magnetocapacitance effect has been revealed for two compositions. The dielectric loss has been described in the Debye model with “freezing” dipole moments and in the orbital-charge ordering model.     

Composition and Structure of Ga<Subscript>1 – <Emphasis Type="Italic">x</Emphasis></Subscript>Na<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As Nanolayers Produced near the GaAs Surface by Na<Superscript>+</Superscript> Implantation

The composition and structure of nanodimensional Ga_{1 – x}Na _x As phases produced by implantation of Na⁺ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E₀ = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga_0.5Na_0.5As–GaAs.     

Hall effect in the Ce(Al<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>2</Subscript> heavy-fermion system

The influence of substitution on the binding energy of many-body states and the formation of the magnetically ordered state in a heavy-fermion compound (CeAl₂) have been studied by measuring the transport characteristics (Hall effect, resistivity) in intermetallic compounds of the Ce(Al_1?x M _x )₂ system (M = Ni, Co; x ≤ 0.08). It is established that the Hall coefficient R _H in Ce(Al_1?x Co _x )₂ intermetallides with x = 0.05 and 0.08 grows by more than an order of magnitude as the temperature decreases from 1.8 to 300 K. The experimental data are used to estimate the effective mass of charge carriers, the relaxation time, and the localization radius of many-body states.     

Metal-insulator transition in Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S crystals

Results of an experimental study of MnS, FeS, and Fe _x Mn_1?x S single crystals are presented. The phase composition, the lattice parameters, and the state of paramagnetic ions in Fe _x Mn_1?x S have been determined by x-ray diffraction analysis and Mössbauer spectroscopy. A sequence of transitions have been found in iron manganese sulfide with x = 0.29 at temperatures T ₁ ≈ 25–50 K, T ₂ ≈ 125 K, and T ₃ ≈ 190 K with a change in kinetic properties and the formation of a metallic state at low temperatures T ≈ 2 K. The possibility of a Mott-Hubbard transition in Fe _x Mn_1?x S sulfides with variation of the composition and the temperature is discussed.     

Physical properties of Fe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Dy<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si crystals

The results of experimental investigation of magnetic and electric properties of Fe_1?x Dy _x Si crystals are reported. It is shown that the magnitude and position of the anomaly observed in the temperature dependences of magnetization are controlled to a considerable extent by the external magnetic field. It is found that the introduction of Dy ions leads to a weak magnetoresistive effect.     

Higher <Emphasis Type="Italic">η</Emphasis><Subscript>c</Subscript>(<Emphasis Type="Italic">nS</Emphasis>) and <Emphasis Type="Italic">η</Emphasis><Subscript>b</Subscript>(<Emphasis Type="Italic">nS</Emphasis>) mesons

The hyperfine splittings in heavy quarkonia are studied in a model-independent way using experimental data on dielectron widths. Relativistic correlations are taken into account together with the smearing of spin-spin interaction. The radius of smearing is fixed by known G/ψ−η _c(1S), ψ(2S)−η _c′(2S) splittings, which appears to be small, r _ss ≅ 0.06 fm. Nevertheless, even with such a small radius, substantial suppression of hyperfine splittings (∼50%) is observed in bottomonium. For nS b states (n = 1, 2, ..., 6), our predicted splittings (in MeV) are 28, 12, 10, 5, 6, 3. For the 3S and 4S charmonium states, the splittings 16(2) and 12(4) MeV are obtained. The text was submitted by the authors in English.