Fluorine etching on the Si(111)-7×7 surfaces using fluorinated fullerene

Fluorine etching on the Si(1 1 1)-7×7 surfaces using fluorinated fullerene molecules as a fluorine source has been investigated. At room temperature, adsorbed fluorinated fullerene molecules reacted with the Si(1 1 1)-7×7 surface to create a localized distribution of fluorine on the surface. Nanoscale etch pits were created by annealing at 300 °C, due to the adsorption of the fluorine localized around the C₆₀F_x molecules. Annealing at 400 °C resulted in the delocalized fluorine distribution on the surface and healing of the etch pits, due to the enhancement of the diffusion of both the fluorine and silicon atoms. Subsequent annealing at 500 °C led to desorption of SiF₂ reactants formed on the surface. The fluorine diffusion process was found to be an elemental process in the etching because the diffusion of adsorbed fluorines is a key for the formation of the SiF₂ species and their subsequent desorption.     

Initial stage of CdTe on Si(1 0 0) grown by MBE

The initial stage of CdTe growth on silicon has been investigated using angle-resolved photoemission and scanning tunneling microscopy (STM). In order to study initial stage of CdTe on Si, we have desorbed CdTe by annealing at 600 °C so that only one monolayer of Te remains on the Si(1 0 0) substrate. Te/Si(1 0 0)2×1 superstructure has been observed by LEED. Photoemission spectra indicate that Te atoms bond with the Si dangling bond. Atomically resolved STM images reveal that the Te atoms form dimers. It is observed that buckling direction of Te-dimer changes and the dimmers are broken in the site of some dimmer rows. It can be explained that the large lattice mismatch cause the switching of the buckling direction and the breaking of Te-dimer resulted surface relaxation.     

Metallization of the β-SiC(100) 3 × 2 surface: A DFT investigation

Using density functional theory (DFT) we report results for the electronic structure and vibrational dynamics of hydrogenated silicon carbide (001) (3 × 2) surfaces with various levels of hydrogenation. These results were obtained using density functional theory with a generalized gradient exchange correlation function. The calculations reveal that metallization can be achieved via hydrogen atoms occupying the second silicon layer. Further increase of hydrogen occupation on the second silicon layer sites results in a loss of this metallization. For the former scenario, where metallization occurs, we found a new vibrational mode at 1870 cm^? 1, which is distinct from the mode associated with hydrogen atoms on the first layer. Furthermore, we found the diffusion barrier for a hydrogen atom to move from the second to the third silicon layer to be 258 meV.     

Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2 × 1: Tensile stress induced by substrate chain structures

By combined investigation of STM and synchrotron PES on Ge/Si(5 5 12)-2 × 1 at 530 °C, it has been found that, in addition to the upward-relaxed surface Si atoms, a subsurface Si atom is also readily replaced by an arriving Ge atom at the initial adsorption stage. Such enhanced interdiffusion is due to a unique character of one-dimensional chain structures of the reconstructed substrate, such as π-bonded and honeycomb chains not existing on other low-index Si surfaces such as Si(001)-c(4 × 2) and Si(111)-7 × 7, applying a tensile surface stress to the neighbouring subsurface atoms. Interdiffusion of Ge having lower surface energy induces adsorption of the displaced Si atoms on the surface to form sawtooth-like facets composed of (113)/(335) and (113)/(112) with arriving Ge atoms until the surface is filled with those facets. Such displacive adsorption is the origin of high Si concentration of formed facets.     

Photolysis of SF6 adsorbed on Si(111)-7 × 7 by monochromatic soft X-ray

Continuous-time photoelectron spectroscopy (PES) and photon-exposure-dependent photon-stimulated desorption (PSD) were employed to investigate the monochromatic soft X-ray-induced dissociation of SF₆ molecules adsorbed on Si(111)-7 × 7 at 30 K (SF₆ dose = 3.4 × 10¹³ molecules/cm², ～ 0.5 monolayer). The photon-induced evolution of adsorbed SF₆ was monitored at photon energies of 98 and 120 eV [near the Si(2p) edge], and sequential valence-level PES spectra made it possible to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are ～ 2.7 × 10^? 17 and ～ 3.7 × 10^?17 cm², respectively. The changes in the F^? and F⁺ PSD ion yields were also measured during irradiation of 120 eV photons. The photon-exposure dependencies of the F^? and F⁺ ion yields show the characteristics: (a) the dissociation of adsorbed SF₆ molecules is ascribable to the substrate-mediated dissociations [dissociative attachment (DA) and dipolar dissociation (DD) induced by the photoelectrons emitting from the silicon substrate]; (b) at early stages of photolysis, the F^? yield is mainly due to DA and DD of the adsorbed SF₆ molecules, while at high photon exposure the F^? formation by electron capture of the F⁺ ion is likely to be the dominant mechanism; (c) the F⁺ ion desorption is associated with the bond breaking of the surface SiF species; (d) the surface SiF is formed by reaction of the surface Si atom with the fluorine atom or F^? ion produced by scission of S–F bond of SF_n (n = 1–6) species.     

Time-evolution of thermal oxidation on high-index silicon surfaces: Real-time photoemission spectroscopic study with synchrotron radiation

The initial oxidation on high-index silicon surfaces with (113) and (120) orientations at 820 K has been investigated by real-time X-ray photoemission spectroscopy (Si 2p and O 1s) using 687 eV photons. The time evolutions of the Siⁿ⁺ (n = 1–4) components in the Si 2p spectrum indicate that the Si^2 + state is suppressed on high-index surfaces compared with Si(001). The O 1s state consists of two components, a low-binding-energy component (LBC) and a high-binding-energy component (HBC). It is suggested that the O atom in strained SiOSi contributes to the LBC component. The reaction rates are slower on high-index surfaces compared with that on Si(001).     

First principles calculations of the Sc adsorption on Si(001)-c(2 × 4)

We have investigated the energetics and the atomic structure of the adsorption of Sc on the Si(001)-c(2 × 4) surface using first principles total energy calculations, within the periodic density functional. The Sc adsorption has been studied at high symmetry sites considering different concentrations. We have first explored the one atom case and then increased the coverage up to a 0.25 of a monolayer of Sc. For the adsorption of one Sc atom we have obtained that the most stable configuration corresponds to the adsorption in the trench between two Si dimers, at the C1 (cave) site. The interaction of the adsorbed Sc with the Si dimers induces a decrease of the dimers buckling amplitude. On the other hand Si dimers without interaction with the adsorbate have buckling amplitudes similar to those of the clean Si surface. When the Sc coverage is increased to two Sc atoms, the most stable structure corresponds to the adsorption at two consecutive V (valley-bridge) sites along the trench between Si dimers, resulting in the weakening of some of the Si dimers bonds. This result indicates that the formation of one dimensional Sc chains on the silicon surface is energetically and kinetically favorable.     

Adsorption of O2 and CO2 on the Si(111)-7 × 7 surfaces

The interaction of O₂ and CO₂ with the Si(111)-7 × 7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O₂ and CO₂ molecules can readily oxidize the Si(111)-7 × 7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~ 533 eV as well as to bridge sites of adatom/rest atom backbonds at ~ 532 eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO₂ has a lower O/Si ratio than that of O₂.     

Study of the TiSi interface formed by Ti deposition on a clean Si (100) surface: A periodic DFT study

A periodic Density Functional Theory (DFT) study using Generalized Gradient Approximation (GGA) of the Ti deposition on a clean Si (100) surface was carried out. The results indicate that Ti adsorbs preferentially on two Si dimers forming polar covalent bonds with four Si atoms. The analysis of the Density of states (DOS) indicates that Ti 3d orbitals hybridize with the surface orbitals near the Fermi level and each Ti atom transfers one electron to the surface even at concentration of 6.8 × 10¹⁴ Ti atom cm^? 2. At this concentration, a quite stable TiSi monolayer is formed and subsequent additions of Ti atoms would initiate metallic Ti growth on the TiSi interface.     

Passivation effect of allylamine molecule on the electronic structure of a Si(001) − (2 × 1) surface

The chemisorption of the allylamine molecule, which contains two functional groups (ethenyl and hydroxyl), on a Si(001) ? (2 × 1) surface was studied using density functional theory (ab-initio DFT) based on the pseudopotential approach. In particular, we focused on the determination of the most stable position of the CC double bond in the ethenyl group and observation of the passivation effect of allylamine on the electronic structure of the clean Si(001) ? (2 × 1) phase. For this purpose, all of the possible interaction mechanisms occurring at the interface were considered: (i) dissociative bonding where the CC bond is parallel to the silicon surface, (ii) dissociative bonding where the CC bond is perpendicular to the silicon surface, and (iii) the [2 + 2] CC cycloaddition reaction. From our total energy calculations, it was found that the bifunctional allylamine molecule attached to the Si(001) ? (2 × 1) surface through the amino functional group, by breaking the N–H bond and forming a Si–H bond and Si–NHCH2CHCH2 surface fragments. During this process, the ethenyl functional group remains intact, and so can be potentially used as an extra reactive site for additional chemical interactions. In addition to these findings, the nudged elastic band method (NEB) calculations related with the reaction paths showed that the parallel position of the CC bond with respect to the surface of the substrate is more favorable. In order to see the influence of the chemisorbed allylamine molecule on the surface states of the clean Si(001) – (2 × 1), we also plotted the density of states (DOS), in which it is seen that the clean Si(001) – (2 × 1) surface was passivated by the adsorption of allylamine.     

First-principles investigations of low-coverage Ca-induced reconstructions on the Si(001) surface

Using the pseudopotential method and the local density approximation of density functional theory we have investigated the stability, atomic geometry, and electronic states for low-coverage Ca adsorbates on the Si(001) surface within the (2 × n) reconstructions with n = 2, 3, 4, 5. Our total energy calculations suggest that the (2 × 4) phase represents the most energetically stable structure with the Ca coverage of 0.375 ML. Within this structural model, each Ca atom is found to form a bridge with the inner two Si–Si dimers. The inner Si–Si dimers become elongated and symmetric (untilted). The band structure calculation indicates that the system is semiconducting with a small band gap. Significant amount of charge transfer from the Ca atoms to neighbouring Si atoms has been concluded by analysing the electronic charge density and simulation of scanning tunnelling microscopy images. The highest occupied and lowest unoccupied electronic states are found to arise from the inner and outer Si–Si dimer components, respectively.     

Local electronic structure of the Si(111)-(7 × 7) surface interacting with Ag atoms

Spatially resolved scanning tunneling spectroscopy was used for the investigation of changes in electronic structure of the Si(111)-(7 × 7) surface which are induced by the presence of a silver atom, a dimer and a cluster in a half-unit cell of the surface reconstruction. Tunnel spectra were measured at room temperature at significant positions in half-unit cells. The presence of one or two Ag atoms moving quickly in a half-unit cell significantly influences only filled states in spectra, while empty states remain practically unchanged and are still dominated by silicon adatom states. Corresponding features identified in the filled states depend on the number of Ag atoms in a half-unit cell and localization of these new states reflects the dynamic behavior of the Ag atom in a half-unit cell. A cluster of silver atoms in the half cell exhibits pronounced maxima in both filled and empty states of the spectrum.     

Small silver clusters at paramagnetic defects of silica surfaces: A density functional embedded-cluster study

We studied the interaction of small Ag_n clusters (n = 1–4) with paramagnetic defect centers of a dehydroxylated silica surface using an all-electron scalar relativistic density functional method. The surface and adsorption complexes on it were modeled with an accurate quantum mechanics/molecular mechanics (QM/MM) scheme of embedding QM clusters in an elastic polarizable environment, described at the molecular mechanics level (MM). We analyzed two types of frequent point defects as sites for trapping and growing of Ag clusters: a silicon atom with a dangling bond (E′ center), ≡ Si?, and a non-bridging oxygen center (NBO), ≡ Si–O?. The Ag clusters interact with these paramagnetic centers forming strong covalent metal-defect bonds. The high adsorption energy allows one to consider the NBO and E′ sites as traps of single Ag atoms and as centers of cluster growth. We also explored the effect of adsorption on observable electronic properties of the silver clusters and of the defects of the silica surface.     

Theoretical study of the migration of the hydrogen atom adsorbed on aluminum nanowire

We study the behavior of a hydrogen atom adsorbed on aluminum nanowire based on density functional theory. In this study, we focus on the electronic structure, potential energy surface (PES), and quantum mechanical effects on hydrogen and deuterium atoms. The activation energy of the diffusion of a hydrogen atom to the axis direction is derived as 0.19 eV from PES calculations. The probability density, which is calculated by including quantum effects, is localized on an aluminum top site in both cases of hydrogen and deuterium atoms of the ground state. In addition, some excited states are distributed between aluminum atoms on the surface of the nanowire. The energy difference between the ground state and these excited states are below 0.1 eV, which is much smaller than the activation energy of PES calculations. Thus using these excited states, hydrogen and deuterium atoms may move to the axial direction easily. We also discuss the electronic structure of the nanowire surface using quantum energy density defined by one of the authors.     

Nucleation and growth of Si on Pb monolayer covered Si(111) surfaces

With a scanning tunneling microscope (STM), we study the initial stage of nucleation and growth of Si on Pb monolayer covered Si(111) surfaces. The Pb monolayer can work as a good surfactant for growth of smooth Si thin films on the Si(111) substrate. We have found that nucleation of two-dimensional (2D) Pb-covered Si islands occurs only when the substrate temperature is high enough and the Si deposition coverage is above a certain coverage. At low deposition coverages or low substrate temperatures, deposited Si atoms tend to self-assemble into a certain type of Si atomic wires, which are immobile and stable against annealing to ~ 200 °C. The Si atomic wires always appear as a double bright-line structure with a separation of ~ 9 Å between the two lines. After annealing to ~ 200 °C for a period of time, some sections of Si atomic wires may decompose, meanwhile the existing 2D Pb-covered Si islands grow laterally in size. The self-assembly of Si atomic wires indicate that single Si adatoms are mobile at the Pb-covered Si(111) surface even at room temperature. Further study of this system may reveal the detailed atomic mechanism in surfactant-mediated epitaxy.     

A density functional theory study of CF3CH2I adsorption and reaction on Ag(111)

The adsorption and reaction behaviors of CF₃CH₂I on Ag(111) were systematically studied by density functional theory (DFT) calculations. Physical adsorption of CF₃CH₂I on Ag(111) occurs due to the weak interactions between surface Ag atoms and iodine atom of CF₃CH₂I; while strong chemisorption occurs for CF₃CH₂ fragment on Ag(111). Electronic analysis indicates that the singly occupied molecular orbital (SOMO) of CF₃CH₂ strongly interacts with the surface Ag atoms. It is very interesting to find that the most stable structures of CF₃CH₂ on Ag(111) locate at the top site, instead of the hollow sites. This might be attributed to the facts that CF₃CH₂ adsorbed at the top site will maximize the sp³-type hybridization, and the possible weak interaction between the fluorine lone pair electrons of p orbitals for CF₃CH₂ and surface Ag(111) occurs, which is supported by the charge density difference (CDD) analysis with a low isosurface value. We propose that the charge density difference (CDD) analysis with a high or low isosurface value can be widely applied to analyze the strong or weak electronic interactions upon adsorption. Transition state calculations suggested that the energy barrier of CF bond rupture for CF₃CH₂I on Ag(111) (1.44 eV) is much higher than that of CI bond breakage for CF₃CH₂I (0.43 eV); and the activation energy of the CF bond dissociation for CF₃CH₂(a) is 0.67 eV.     

Synthesis of superhydrophobic PTFE-like thin films by self-nanostructuration in a hybrid plasma process

Superhydrophobic poly(tetrafluoro-ethylene) (PTFE) like thin films were grown on silicon wafers using a plasma-based hybrid process consisting on sputtering a carbon target in an Ar/CF₄ atmosphere. The influence of the bias voltage applied to the substrate (V_Bias) as well as of the gas mixture composition (%CF₄) on the chemical composition, the wettability and the morphology of the deposited thin films were evaluated.The chemical composition measured by X-ray Photoelectron Spectroscopy (XPS) has revealed that the F/C atomic ratio is always lower than for conventional PTFE (F/C = 2) and that it decreases when V_Bias increases (from F/C = 1 for V_Bias = ? 100 V to F/C = 0.75 for V_Bias = ? 200 V). This behavior is associated with the preferential sputtering of the fluorine atoms during the plasma-assisted growth of the films. Consecutively, a self-nanostructuration enhanced when increasing V_Bias is observed. As a consequence, the water contact angle (WCA) measurements range from 70° up to 150° depending on (i) the fluorine concentration and (ii) on the magnitude of the nanostructuration. In addition, for the films presenting the highest WCAs, a small hysteresis between the advancing and receding WCAs is observed (< 10°) allowing these films to fulfill completely the requirements of superhydrophobicity. The nanostructuration is probably due to the chemical etching by fluorine atoms of the fluorinated group.In order to get more understanding on the wettability mechanisms of these surfaces, the topography of the films has been evaluated by atomic force microscopy (AFM). The data have revealed, for all films, a dense and regular structure composed by conic objects (A_vH is their average height and A_vD is the average distance between them) for which the dimensions increase with V_Bias. A correlation between A_vH/A_vD, defined as the “morphological ratio”, with the WCA was established. Theoretical evaluations of the WCA using the Wenzel and Cassie equations with, as inputs, the features of the deposited thin film surfaces measured by AFM suggest that the wetting regime is intermediate between these two ideal situations.     

Comparative PEEM and AES study of surface morphology and composition of Cu films on Si and 3C–SiC substrates

We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C–SiC(1 0 0) and Cu(30 nm)/Si(1 0 0) samples annealed successively up to 850 °C. With PEEM, lateral diffusion of Cu atoms on the 3C–SiC substrate was observed at 400 °C while no lateral diffusion was seen for the Cu/Si(1 0 0) samples up to 850 °C. The 30 nm Cu thin film on 3C–SiC began to agglomerate at 550 °C, similar to the case for the Cu/Si(1 0 0) system. No further spread of the lateral diffusion region was found in subsequent annealing up to 850 °C for Cu/3C–SiC while separated regular-sized dot structures were found at 850 °C for Cu/Si(1 0 0). AES studies of Cu/Si(1 0 0) system showed partial interface reaction during Cu deposition onto the Si(1 0 0) substrate and oxidation of the resultant Cu₃Si to form SiO₂ on the specimen surface at room temperature in air. Surface segregation of Si and C was observed after annealing at 300 °C for Cu/Si(1 0 0) and at 850 °C for the Cu/3C–SiC system. We have successfully elucidated the observed phenomena by combining PEEM and AES considering diffusion of the constituent elements and/or reaction at interfaces.     

Patterns in Ge cluster growth on clean and oxidized Si(111)-(7 × 7) surfaces

Ge atoms have been deposited on domain-patterned clean Si(111)-(7 × 7) and oxidized Si(111)-(7 × 7) surfaces. Clustering of Ge from the deposited Ge adatoms on these two kinds of surfaces shows contrasting patterns. On the clean Si surface, clustering predominantly occurs on domain boundaries, which include step edges on two sides. This leaves small domains denuded. Ge diffusion length has been estimated from the size of these denuded domains. For large domains, additional clustering is observed within the domains. For the oxidized Si surface, the pattern formation is in sharp contrast with that for the clean Si surface. In this case the domain boundaries remain relatively empty and there is strong clustering within the domains leading to the formation of dense Ge nanoislands within the domains. This contrasting pattern formation has been explained via a reaction diffusion model.     

Vacancy diffusion in the Cu(001) surface II: Random walk theory

We develop a version of the vacancy mediated tracer diffusion model, which follows the properties of the physical system of In atoms diffusing within the top layer of Cu(0 0 1) terraces. This model differs from the classical tracer diffusion problem in that (i) the lattice is finite, (ii) the boundary is a trap for the vacancy, and (iii) the diffusion rate of the vacancy is different, in our case strongly enhanced, in the neighborhood of the tracer atom. A simple continuum solution is formulated for this problem, which together with the numerical solution of the discrete model compares well with our experimental results.