Intersubband transitions in strained Si/Si1 − xGex/Si quantum wells

The energy subbands in pseudomorphic p-type Si/Si_1 − xGe_x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained for a light polarization vector parallel or perpendicular to the growth direction. Comparison is made with other theories and experiment.     

H adsorption at Ag/Si interfaces in epitaxially grown Ag(1 1 1) films on Si(1 1 1)7 × 7 substrates

The interaction of atomic H with Ag(1 1 1)/Si(1 1 1)7 × 7 surfaces was studied by thermal desorption (TD) spectroscopy and scanning tunneling microscopy (STM) at room temperature. TD spectroscopy revealed an intense peak from mono H–Si bonds, even though the Si surface was covered by the Ag atoms. This peak was not observed from Ag-coated SiO₂/Si substrates. STM observation showed no clear change of the Ag surface morphology resulting from H exposure. All these results indicate that the atomic H adsorbs at neither the Ag surfaces nor Ag bulk sites, but at the Ag/Si interface by diffusing through the Ag film.     

Selective adsorption of coronene on Si(1 1 1)-(7 × 7)

The adsorption of coronene (C₂₄H₁₂) on the Si(1 1 1)-(7 × 7) surface is studied using scanning tunneling microscopy (STM). Upon room temperature submonolayer deposition, we find that the coronene molecules preferentially adsorb on the unfaulted half of the 7 × 7 unit cell. Molecules adsorbed on different sites can be induced to move to the preferential sites by the action of the tip in repeated image scans. Imaging of the molecules is strongly bias dependent, and also critically depends on the adsorption site. We analyze the results in terms of differential bonding strength for the different adsorption sites and we identify those substrate atoms which participate in the bonding with the molecule.     

Interaction of Ag with the Si(1 1 1)1 × 1–H surface

Synchrotron radiation based photoemission spectroscopy (SRPES) and low energy electron diffraction (LEED) are used to study the interaction between Ag atoms and the Si(1 1 1)1 × 1–H surface. At an Ag coverage of 0.063 monolayers (ML) on the Si(1 1 1)1 × 1–H surface, the Si 2p component corresponding to Si–H bonds decreases, and an additional Si 2p component appears which shifts to a lower binding energy by 109 meV with respect to the Si bulk peak. The new Si 2p component is also observed for 0.25 ML Ag on the Si(1 1 1)7 × 7 surface. These findings suggest that Ag atoms replace the H atoms of the Si(1 1 1)1 × 1–H surface and form direct Ag–Si bonds. Contrary to the widely accepted view that there is no chemical interaction between Ag particles and the H-passivated Si surface, these results are in good agreement with recent first-principles calculations.     

Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature

Motivated by the need to form 1D-nanostructured dopants on silicon surfaces, we have attempted to grow Ga on the high index Si(5 5 12) surface which has a highly trenched (1D) morphology. The evolution of the interface with Ga adsorption in the monolayer regime has been probed by in situ AES, LEED and EELS. Controlling the kinetics by changing the Ga flux rates shows an interesting difference in the 1.0 to 1.5 ML region. The low flux rate (0.03 ML/minute) results in a Frank van der Merwe (layer by layer) growth mode up to 2 ML, while the higher flux rate (0.1 ML/minute) shows a transient island formation after the completion of 1 ML. The low rate shows the formation of 2 × (3 3 7) and (2 2 5) superstructures, while only the 2 × (3 3 7) is observed in a wide coverage range for the higher rate. The results demonstrate the ability to kinetically control the surface phases with different electronic properties of this technologically important interface.     

Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1 × 1) to (7 × 7) reconstruction revisited

Using Scanning Tunneling Microscope (STM), we show that the surface undergoes phase transformation from disordered “1 × 1” to (7 × 7) reconstruction which is mediated by the formation of Si magic clusters. Mono-disperse Si magic clusters of size ~ 13.5 ± 0.5 Å can be formed by heating the Si(111) surface to 1200 °C and quenching it to room temperature at cooling rates of at least 100 °C/min. The structure consists of 3 tetra-clusters of size ~ 4.5 ? similar to the Si magic clusters that were formed from Si adatoms deposited by Si solid source on Si(111)-(7 × 7) [1]. Using real time STM scanning to probe the surface at ~ 400 °C, we show that Si magic clusters pop up from the (1 × 1) surface and form spontaneously during the phase transformation. This is attributed to the difference in atomic density between “disordered 1 × 1” and (7 × 7) surface structures which lead to the release of excess Si atoms onto the surface as magic clusters.     

Second harmonic response of the Si(111)7 × 7 surface

Optical second harmonic generation spectra have been experimentally obtained from a clean Si(111) 7 × 7 in two different polarization configurations isolating the rotational anisotropic and isotropic contributions. The energy of the fundamental photon is varied from 0.8 eV to 2.5 eV. For comparison, we also use a microscopic formulation based on the semi-empirical tight binding method to evaluate the nonlinear surface susceptibility tensor χ(2ω). Good agreement between theory and experiment is obtained with respect to the number of resonances, their position in energy, and surface or bulk character.     

Topmost-surface-sensitive Si-2p photoelectron spectra of clean Si(1 0 0)-2 × 1 measured with photoelectron Auger coincidence spectroscopy

Topmost-surface-sensitive Si-2p photoelectron spectra of a clean Si(1 0 0)-2 × 1 surface have been measured using Si-2p photoelectron Si-L₂₃VV Auger coincidence spectroscopy (Si-2p–Si-L₂₃VV PEACS). The escape depth of the PEACS electrons is estimated to be ～1.2 Å. The results support the assignments of the Si up-atoms, the Si down-atoms, the Si 2nd-layer, and the Si bulk proposed in previous researches. The Si-2p component with a binding energy of ?0.23 eV relative to the bulk Si-2p_3/2 peak, is shown to originate mainly from the topmost surface. Site selectivity of PEACS is indicated to be achieved to some degree by carefully selecting the kinetic energy of the Auger electrons. Since PEACS can be applied to any surface, the present study opens a new approach to identify PES components.     

Band offsets and properties ofSi1 − xGex/Si material systems

Following the upsurge in the study ofSi_1 − xGe_x /Si material systems for high-speed applications, we calculate the band offsets using reformulated tight-binding methods. The calculated value of 0.78 eV for the valence band offset (VBO) of pure substances is in excellent agreement with recent experimental measurements. The VBO for alloy interfaces is 0.78 x. We apply the VBO and conduction band offsets (CBO) to shift in photoluminescence and electron confinement in microstructures respectively. The calculated VBO is strongly dependent on the precursor flux ratio.     

Room-temperature chemisorption of chloroethylenes on Si(1 1 1)7 × 7: formation of surface vinyl,vinylidene and their chlorinated derivatives

Chemisorption of a family of six chloroethylenes (C₂H₃Cl, 1,1-C₂H₂Cl₂, cis-1,2-C₂H₂Cl₂, trans-1,2-C₂H₂Cl₂, C₂HCl₃, and C₂Cl₄) on Si(1 1 1)7 × 7 at room temperature (RT) has been investigated by vibrational electron energy loss spectroscopy (EELS). The characteristic vibrational EELS features have been used to identify the prominent surface species upon RT adsorption. Like ethylene, C₂H₃Cl has been found to predominantly adsorb in a di-σ bonding geometry to the Si surface, while 1,1-C₂H₂Cl₂, cis- and trans-1,2-C₂H₂Cl₂, C₂HCl₃ and, to a lesser extent, C₂Cl₄ appear to undergo dechlorination upon adsorption to form chlorinated vinyl adspecies involving single-σ bonding structures. Evidence of vinylidene (>CCH₂) has been obtained for the first time on a semiconductor surface for the adsorption of 1,1-C₂H₂Cl₂. The present work illustrates that the molecular structure and the Cl content of chloroethylenes play a crucial role in controlling not only the adsorption geometry but also the extent of dechlorination and the resulting adspecies upon RT adsorption on Si(1 1 1).     

First principles total energy calculations of the adsorption of germane and digermane on Si(0 0 1)-c(2 × 4)

First principles total energy studies are performed to investigate the energetics, and the atomic structure of the adsorption of germane (GeH₄), and digermane (Ge₂H₆) on the Si(0 0 1)-c(2 × 4) surface. It has been observed experimentally that adsorption of Ge₂H₆ is a dissociative process, which first yields GeH₃ and then GeH₂ fragments as products. We first study the adsorption of GeH₂ considering two different models; the intra-row and the on-dimer geometries. Our results show that the on-dimer site is more stable than the intra-row geometry by 0.44 eV. This is not a surprise since in the absence of H atoms, adsorption in the on-dimer site leaves no dangling bonds. In contrast, when the GeH₂ fragment is considered together with two H atoms, the intra-row geometry is favored energetically as compared with the on-dimer site, in good agreement with experiment. Similar results have been previously obtained for the adsorption of SiH₂ on Si(0 0 1). Digermane adsorption is explored according to two different geometries. In the first one, we have considered the adsorption as two GeH₃ fragments, while in the second, we have considered the adsorption as two GeH₂ fragments plus 2 H fragments. In good agreement with experiments, it is found that the latter geometry is energetically more favorable.     

Passivation effect of allylamine molecule on the electronic structure of a Si(001) − (2 × 1) surface

The chemisorption of the allylamine molecule, which contains two functional groups (ethenyl and hydroxyl), on a Si(001) ? (2 × 1) surface was studied using density functional theory (ab-initio DFT) based on the pseudopotential approach. In particular, we focused on the determination of the most stable position of the CC double bond in the ethenyl group and observation of the passivation effect of allylamine on the electronic structure of the clean Si(001) ? (2 × 1) phase. For this purpose, all of the possible interaction mechanisms occurring at the interface were considered: (i) dissociative bonding where the CC bond is parallel to the silicon surface, (ii) dissociative bonding where the CC bond is perpendicular to the silicon surface, and (iii) the [2 + 2] CC cycloaddition reaction. From our total energy calculations, it was found that the bifunctional allylamine molecule attached to the Si(001) ? (2 × 1) surface through the amino functional group, by breaking the N–H bond and forming a Si–H bond and Si–NHCH2CHCH2 surface fragments. During this process, the ethenyl functional group remains intact, and so can be potentially used as an extra reactive site for additional chemical interactions. In addition to these findings, the nudged elastic band method (NEB) calculations related with the reaction paths showed that the parallel position of the CC bond with respect to the surface of the substrate is more favorable. In order to see the influence of the chemisorbed allylamine molecule on the surface states of the clean Si(001) – (2 × 1), we also plotted the density of states (DOS), in which it is seen that the clean Si(001) – (2 × 1) surface was passivated by the adsorption of allylamine.     

Electronic structure of CuClxBr1 − x,CuClxI1 − xand CuBrxI1 − xalloys

In this work, the electronic structure and disorder effects in copper halides alloys are studied by means of the full potential linearized augmented plane wave (FLAPW) method. The calculated bowing parameter shows that the main contribution is due to the relaxation effects, though the charge transfer remains relatively significant, while the volume deformation contribution is negligible. The total bowing is found to be small in the three studied alloys. Results agree well with experimental and available theoretical works.     

Performance evaluation of 64 × 10 Gbps and 96 × 10 Gbps DWDM system with hybrid optical amplifier for different modulation formats

In this paper, we investigated the performance of multi terabits DWDM system consisting of hybrid optical amplifier RAMAN-EDFA for different data format such as non-return to zero (NRZ), return to zero (RZ) and differential phase shift keying (DPSK). We find that in 64 × 10 and 96 × 10 Gbps, RZ is more adversely affected by nonlinearities, where as NRZ and DPSK is more affected by dispersion. We further show that RZ provide good quality factor (13.88 dB and 15.93 dB for 64 and 96 channels), less eye closure (2.609 dB and 3.191 dB for 64 and 96 channels) and acceptable bit error rate (3.89 × 10⁸ and 1.24 × 10⁹ for 64 and 96 channels) at the respective distance as compare to other existing modulation format. We further investigated the maximum single span distance covered by using existing data formats.     

Ab initio study of Yb on the Ge(111)–(3 × 2) and Si(111)–(3 × 2) surfaces

The surface reconstruction, 3 × 2, induced by Yb adsorption on a Ge (Si)(111) surface has been studied using first principles density-functional calculation within the generalized gradient approximation. The two different possible adsorption sites have been considered: (i) H₃ (this site is directly above a fourth-layer Ge (Si) atom) and (ii) T₄ (directly above a second-layer Ge (Si) atom). We have found that the total energies corresponding to these binding sites are nearly the same, indeed for the Yb/Ge (Si)(111)–(3 × 2) structure the T₄ model is slightly energetic by about 0.01 (0.08) eV/unitcell compared with the H₃ model. In particular for the Ge sublayer, the energy difference is small, and therefore it is possible that the T₄, H₃, or T₄H₃ (half of the adatoms occupy the T₄ adsorption site and the rest of the adatoms are located at the H₃ site) binding sites can coexist with REM/Ge(111)–(3 × 2). In contrast to the proposed model, we have not determined any buckling in the Ge = Ge double bond. The electronic band structures of the surfaces and the corresponding natures of their orbitals have also been calculated. Our results for both substrates are seen to be in agreement with the recent experimental data, especially that of the Yb/Si(111)–(3 × 2) surface.     

Photolysis of SF6 adsorbed on Si(111)-7 × 7 by monochromatic soft X-ray

Continuous-time photoelectron spectroscopy (PES) and photon-exposure-dependent photon-stimulated desorption (PSD) were employed to investigate the monochromatic soft X-ray-induced dissociation of SF₆ molecules adsorbed on Si(111)-7 × 7 at 30 K (SF₆ dose = 3.4 × 10¹³ molecules/cm², ～ 0.5 monolayer). The photon-induced evolution of adsorbed SF₆ was monitored at photon energies of 98 and 120 eV [near the Si(2p) edge], and sequential valence-level PES spectra made it possible to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are ～ 2.7 × 10^? 17 and ～ 3.7 × 10^?17 cm², respectively. The changes in the F^? and F⁺ PSD ion yields were also measured during irradiation of 120 eV photons. The photon-exposure dependencies of the F^? and F⁺ ion yields show the characteristics: (a) the dissociation of adsorbed SF₆ molecules is ascribable to the substrate-mediated dissociations [dissociative attachment (DA) and dipolar dissociation (DD) induced by the photoelectrons emitting from the silicon substrate]; (b) at early stages of photolysis, the F^? yield is mainly due to DA and DD of the adsorbed SF₆ molecules, while at high photon exposure the F^? formation by electron capture of the F⁺ ion is likely to be the dominant mechanism; (c) the F⁺ ion desorption is associated with the bond breaking of the surface SiF species; (d) the surface SiF is formed by reaction of the surface Si atom with the fluorine atom or F^? ion produced by scission of S–F bond of SF_n (n = 1–6) species.     

First principles calculations of the Sc adsorption on Si(001)-c(2 × 4)

We have investigated the energetics and the atomic structure of the adsorption of Sc on the Si(001)-c(2 × 4) surface using first principles total energy calculations, within the periodic density functional. The Sc adsorption has been studied at high symmetry sites considering different concentrations. We have first explored the one atom case and then increased the coverage up to a 0.25 of a monolayer of Sc. For the adsorption of one Sc atom we have obtained that the most stable configuration corresponds to the adsorption in the trench between two Si dimers, at the C1 (cave) site. The interaction of the adsorbed Sc with the Si dimers induces a decrease of the dimers buckling amplitude. On the other hand Si dimers without interaction with the adsorbate have buckling amplitudes similar to those of the clean Si surface. When the Sc coverage is increased to two Sc atoms, the most stable structure corresponds to the adsorption at two consecutive V (valley-bridge) sites along the trench between Si dimers, resulting in the weakening of some of the Si dimers bonds. This result indicates that the formation of one dimensional Sc chains on the silicon surface is energetically and kinetically favorable.     

Cooperative phenomena in self-assembled nucleation of 3 × 4-In/Si(100) surface magic clusters

Using statistical analysis of the scanning tunneling microscopy images of the 3 × 4-In surface magic cluster (SMC) arrays on Si(100)1 × 2 substrate at low In coverages, the main regularities of the space distribution of the nucleated SMCs have been established. It has been found that a nucleated SMC perturbs the surface potential relief within a limited zone around itself in a way that some of the sites in the zone demonstrate a great preference for nucleating a new cluster, while in the other sites the nucleation is greatly suppressed. Outside the zone, the nucleation probability is close to that of the random nucleation simulated using Monte-Carlo technique. Energetic background of the observed phenomena has been proved using density-functional theory calculations, which clearly demonstrate that the lower the formation energy the higher the occurrence probability of a given cluster-pair configuration.     

1.55 μm silicon-based reflection-type waveguide-integrated thermo-optic 2 × 2 switch

In this work a waveguide-integrated 2 × 2 switch operating at the infrared communication wavelength of 1550 nm is proposed and theoretically discussed. The device is based on the total internal reflection (TIR) phenomenon and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapour deposition (PECVD) techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be therefore achieved at the interface by acting on the temperature. The device is integrated in a 4 μm-wide and 3 μm-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. We calculated an output crosstalk always better than 24 dB and insertion losses as low as 3.5 dB.