Pressure induced structural change in PbPc studied by infrared and UV–visible spectroscopy and theoretical calculation

Lead phthalocyanine (PbPc) has a non-planar ‘shuttle-cock’ structure with a C_4v molecular symmetry and forms a one-dimensional column in the crystal. We measured infrared and UV–visible spectra for the PbPc crystal under high hydrostatic pressure by using a diamond anvil cell. The IR spectrum of PbPc shows three strong peaks in the 1000–1200 cm⁻¹ region. With increasing pressure, the intensity ratio of the middle peak to the other two peaks increased. This result suggests a structural transformation of the PbPc molecule from the shuttle-cock structure toward the planar structure with increasing pressure. In the UV–visible spectra, two remarkable changes were observed under high pressure: the peak intensity of the band at 2.7 eV was decreased, and the band at 1.5 eV was shifted to lower energy and broadened. The former feature suggests that the highest occupied molecular orbital (HOMO) band is not filled perfectly in the solid-state of PbPc under ambient pressure, and that the filling of the HOMO band occurs with increasing pressure. The change on the low energy band at 1.5 eV due to increasing pressure can be attributed to an increase in the intermolecular interaction.     

Evolution of interface properties of the Pentacene/Bi(0001) system

Using angle-resolved photoemission spectroscopy we measured the evolution of the electronic properties of the Pentacene (Pn)/Bi(0001) interface. From thickness dependent photoemission spectra of the substrate and Pn film we conclude that Pn growth is epitaxial. Pentacene highest occupied molecular orbital (HOMO) valence band features are identical for sub-monolayer (ML) as well as for thick films which suggests a thickness independent film morphology. The Pn/Bi interaction is weak and results in a lowering of the HOMO binding energy by 180 ± 5 meV and 80 ± 5 meV for the first and second MLs respectively. The interface dipole (ID) is fully developed over the first ～ 1.2 ML of Pn coverage and has a value of ID = 310 ± 10 meV. The hole injection barrier across the interface is Φ_h = 1.03 ± 0.01 eV.     

Transition to fixed final states in two-photon photoemission from adsorbate–metal systems

A simple theory is presented to study the final state transition in the two-photon photoemission (2PPE) processes of the adsorbate on a metal surface, in the light of recent experimental observation for benzene/Cu(1 1 1) system. The 2PPE spectrum is calculated for a model system assuming that an unoccupied adsorbate level above the vacuum, populated by the two-photon excitation, couples to a continuum of free photoelectrons. An analysis of the 2PPE spectra as a function of the incident photon energy reveals the spectral features including the possibility of Fano-type modification and resonance enhancement of the final state transition in the 2PPE processes. Attempt is also made to explain why the d-band emission of the substrate is enhanced in the presence of adsorbates.     

Interaction of Ag with the Si(1 1 1)1 × 1–H surface

Synchrotron radiation based photoemission spectroscopy (SRPES) and low energy electron diffraction (LEED) are used to study the interaction between Ag atoms and the Si(1 1 1)1 × 1–H surface. At an Ag coverage of 0.063 monolayers (ML) on the Si(1 1 1)1 × 1–H surface, the Si 2p component corresponding to Si–H bonds decreases, and an additional Si 2p component appears which shifts to a lower binding energy by 109 meV with respect to the Si bulk peak. The new Si 2p component is also observed for 0.25 ML Ag on the Si(1 1 1)7 × 7 surface. These findings suggest that Ag atoms replace the H atoms of the Si(1 1 1)1 × 1–H surface and form direct Ag–Si bonds. Contrary to the widely accepted view that there is no chemical interaction between Ag particles and the H-passivated Si surface, these results are in good agreement with recent first-principles calculations.     

Heterostructured organic interfaces probed by resonant photoemission

The application of the resonant photoemission spectroscopy (RPES) to various organic molecule based systems is reviewed. The chemical specificity and the possibility to conduct experiments in the energy domain that provides a time scale for charge dynamics, make the RPES a powerful tool to study organic heterojunctions and in particular to probe the charge transfer processes at organic interfaces. We briefly discuss the models used in RPES data analysis to extract the time scale of the excited charge delocalisation and the spatial correlation of core, valence occupied and unoccupied molecular states. As an example we report on 3,4,9,10-perylene tetracarboxylic acid dianhydride (PTCDA) on (1 × 2) Au(1 1 0) surface where organic layer metallicity is directly evidenced in RPES experiments. A particular attention is dedicated to bio-mimetic model molecules whose electronic structure at interfaces is the fundamental key for the design of real devices. In the last section we consider recent experiments that could open the way to new fields of applications regarding biological molecules and single molecule systems where RPES could elucidate the link between the quantum and the meso-scopic properties of such systems.     

Charge-transfer at silver/phthalocyanines interfaces

Valence band photoemission spectroscopy (VB-PES) and inverse photoemission spectroscopy (IPES) were employed to determine the occupied and unoccupied density of states upon silver deposition onto layers of two phthalocyanines (H₂Pc and CuPc). The two different Pc molecules give rise to very distinct behaviour already during the initial stage of silver deposition. While in the CuPc case no shift occurs in the energy levels, the H₂Pc highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) are shifting simultaneously by 0.3 eV, i.e., the HOMO shifts away from the Fermi level while LUMO shifts towards the Fermi level. As the silver quantity increases the HOMO levels of both Pcs are shifting towards the Fermi level. When the Fermi level is resolved in the VB spectra, the characteristic features of H₂Pc and CuPc are smeared out to some extent. Shifts in HOMO and LUMO energy positions as well as changes in line shapes are discussed in terms of charge-transfer and chemical reactions at the interfaces.     

First-principles investigations of low-coverage Ca-induced reconstructions on the Si(001) surface

Using the pseudopotential method and the local density approximation of density functional theory we have investigated the stability, atomic geometry, and electronic states for low-coverage Ca adsorbates on the Si(001) surface within the (2 × n) reconstructions with n = 2, 3, 4, 5. Our total energy calculations suggest that the (2 × 4) phase represents the most energetically stable structure with the Ca coverage of 0.375 ML. Within this structural model, each Ca atom is found to form a bridge with the inner two Si–Si dimers. The inner Si–Si dimers become elongated and symmetric (untilted). The band structure calculation indicates that the system is semiconducting with a small band gap. Significant amount of charge transfer from the Ca atoms to neighbouring Si atoms has been concluded by analysing the electronic charge density and simulation of scanning tunnelling microscopy images. The highest occupied and lowest unoccupied electronic states are found to arise from the inner and outer Si–Si dimer components, respectively.     

Mechanoluminescence characterisation of γ-irradiated (KNa)Br:Ce3+ phosphor

The mechanoluminescence (ML) of γ-irradiated coloured powder of (KNa)Br:Ce(0.1–10 mol%) phosphor is reported in this paper. The samples are prepared by wet chemical method. The ML intensities are found to be dependent on concentrations of Ce³⁺ ion and γ-rays radiation dose. The variation of peak ML intensity of (KNa)Br:Ce(0.5 mol%) with different γ-rays dose is found as linear up to 2.5 kGy high dose from 0.08 kGy, whereas for the KBr:Ce(0.5 mol%) and NaBr:Ce(0.5 mol%) samples the ML intensities increases sublinearly. The prepared sample shows minimum fading in ML intensity. The ML characterisation shows the good linearity, less fading and simple ML glow curve structure, thus the prepared material may be useful for radiation dosimetry.     

Density functional calculations for Ni adsorption on Al(1 1 0)

The adsorption of 0.25, 0.5 and 1 monolayer (ML) of the transition metal Ni on the metal substrate Al(1 1 0) was studied using first-principles calculations at the level of density functional theory. The metal–metal system was analyzed with the generalized gradient approximation. Four stable atomic configurations were considered, and the optimized geometries and adsorption energies of different Ni adsorption sites on the Al(1 1 0) surface at selected levels of coverage were calculated and compared. The four-fold hollow site was determined to be the most stable adsorption site with adsorption energy of 5.101 eV at 0.25 ML, 3.874 eV at 0.5 ML and 3.665 eV at 1 ML. The adsorption energies of the four sites slightly decreased as the Ni coverage increased. Work function analysis showed that when Ni is adsorbed on the Al(1 1 0) surface, the work function decreased as the coverage increased due to depolarization. The Mulliken population and density of states were calculated to determine the charge distribution of the adsorption site, confirming that a chemisorption interaction exists between the adsorbed Ni atom and Al(1 1 0) surface atoms.     

Theoretical studies on geometrical and electronic structure of electroplex at the NPB/PBD interface in organic light-emitting diodes

The studies on geometrical and electronic structure of electroplex (NPB⁺PBD⁻), which is formed by NPB⁺ and PBD⁻, were carried out by simulation calculation. The calculation results indicate that the (NPB⁺PBD⁻) is formed efficiently when the positions of PBD⁻ and NPB⁺ are appropriate. The (NPB⁺PBD⁻) is energetically favored compared to isolated ions NPB⁺ and PBD⁻. So the ionic state NPB⁺ and PBD⁻ at the interface NPB/PBD inside organic light-emitting diode (OLED) tend to form electroplex. The analysis of geometrical structure data of the (NPB⁺PBD⁻) suggests that the electron transfer occurs from the PBD⁻ side to the NPB⁺ side. The lowest unoccupied molecular orbital (LUMO) of (NPB⁺PBD⁻) is localized on the PBD⁻ side and the highest occupied molecular orbital (HOMO) of (NPB⁺PBD⁻) on the NPB⁺ side. The energy gap of the (NPB⁺PBD⁻) is 1.61 eV, which approximately equals to the energy difference of 1.63 eV between the LUMO of PBD and the HOMO of NPB. The emission of electroplex is theoretically intermolecular optical transition from the LUMO of PBD to the HOMO of NPB. Because of little overlap probability between LUMOs of PBD and NPB at the NPB/PBD interface inside OLED, the exciplex of PBD and NPB is not efficiently produced.     

In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study

We have studied CO interaction with SiO₂/Si system at high temperature (~ 1100 °C) and 350 mbar by core-level photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of nano-crystals of the 3C polytype. Photoemission spectroscopy moreover reveals the formation of silicon oxicarbide which could not be evidenced by other methods. Combining these results with previous Nuclear Resonance Profiling study gives a deeper insight into the mechanisms involved in the nanocrystals growth and especially for the reaction equation leading to SiC formation. We show that CO diffuses as a molecule through the silica layer and reacts with the silicon substrate according the following reaction: 4 CO + 4 Si → SiO₂ + 2SiC + SiO₂C₂.     

Growth and photoemission studies of Ag nanofilms on pseudomorphic fcc Fe(1 0 0)

The successful growth of Ag nanofilms on pseudomorphic metastable-fcc-phase Fe(1 0 0) substrates is reported. We have carried out a photoemission study of the Ag nanofilms prepared on pseudomorphic fcc Fe(1 0 0). From these results, it is found that the present Ag nanofilms were grown in the direction of [1 1 1] on pseudomorphic fcc Fe(1 0 0) substrates. From the detailed photoemission spectra, we discuss the quantized electronic structure in Ag nanofilm grown on pseudomorphic fcc Fe(1 0 0).     

Cobalt oxide nanolayers on Pd(100): The thickness-dependent structural evolution

The growth of interface-stabilized cobalt oxide (CoO_x) nanolayers on Pd(100) has been investigated and their structures are reported as a function of coverage. Several different phases have been observed by LEED and STM experiments, and they have been characterized spectroscopically by photoemission and X-ray absorption. The data indicate that in the low coverage regime (up to Θ_Co ≈ 2–3 ML) rock-salt CoO type phases are formed (defective in the single layer regime, and stoichiometric in multilayers) with (100) or (111) termination. At higher coverage (Θ_Co ≈ 10–20 ML) spinel Co₃O₄(111) and CoO(100) layers have been detected, in ratios dependent on the preparation conditions. The observed structures are discussed in relation to similar structures reported recently for CoO_x films on Ir(100) [W. Meyer et al., J. Phys.: Condens. Matter 20 (2008) 265011].     

Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature

Motivated by the need to form 1D-nanostructured dopants on silicon surfaces, we have attempted to grow Ga on the high index Si(5 5 12) surface which has a highly trenched (1D) morphology. The evolution of the interface with Ga adsorption in the monolayer regime has been probed by in situ AES, LEED and EELS. Controlling the kinetics by changing the Ga flux rates shows an interesting difference in the 1.0 to 1.5 ML region. The low flux rate (0.03 ML/minute) results in a Frank van der Merwe (layer by layer) growth mode up to 2 ML, while the higher flux rate (0.1 ML/minute) shows a transient island formation after the completion of 1 ML. The low rate shows the formation of 2 × (3 3 7) and (2 2 5) superstructures, while only the 2 × (3 3 7) is observed in a wide coverage range for the higher rate. The results demonstrate the ability to kinetically control the surface phases with different electronic properties of this technologically important interface.     

Energy relaxation through the π*-state in C,F and O K-shell excited CF3COCH3

Total photoabsorption spectra of CF₃COCH₃ were measured in the C, F and O K-shell regions and the peak assignments were tentatively given. The K-shell electrons of C, F and O atoms were selectively excited into the π^* orbital. The kinetic energy (KE) distribution of CF₃⁺ formed through the π^* states gave the maxima at KE = 0 and 0.43 eV. The yield of CF₃⁺ with KE = 0 eV increased from 10 to 50% by changing the excitation sites from F 1s to O 1s. This finding was reasonably understood by considering that intramolecular energy flows from the initially excited K-shell electron to vibrational modes of CF₃ group. The KE distribution of CH₃⁺ showed a mirror image of that for CF₃⁺.     

Initial stages of Bi/Ge(111) interface formation: A detailed STM study

We present a detailed scanning tunneling microscopy investigation of ultra-thin Bi films on Ge(111)-c(2 × 8) in the range up to 1.5 ML. During growth at 300 K, the second/third atomic layer of Bi already starts to nucleate before the completion of the first/second layer correspondingly. Laterally isolated first layer Bi atoms, clusters and islands posses no electronic states in the range ~ 0.5 eV above the Fermi level of the substrate. In contrast, metallic electronic properties are found for continuous films when Bi coverage nears 1 ML. Annealing the as-deposited Bi films at 450 K causes lateral redistribution of Bi due to surface diffusion: coarsening of two-dimensional Bi islands with no long range order in the adsorbate layer is observed up to 1 ML; long range ordered (√3 × √3)-Bi/Ge(111) interface plus three-dimensional Bi clusters are obtained for coverages in excess of 1 ML.     

XPS and SRUPS study of oxygen adsorption on Cd0.9Zn0.1Te (1 1 1)A surface

Synchrotron radiation ultraviolet photoemission spectroscopy (SRUPS) and X-ray photoelectron spectroscopy (XPS) have been applied to investigate oxygen adsorption on a cadmium zinc telluride (CZT) (1 1 1)A surface. The surface chemical composition and the surface oxidation process were monitored by recording the Te 3d, O 1s, Zn 2p, Cd 4d core level peaks, and the Cd MNN Auger peak. The CZT (1 1 1)A surface was effectively oxidized by dosing oxygen directly. The typical surface state of the clean CZT (1 1 1)A surface was identified. After oxygen exposure, this surface state disappeared and a signal due to the formation of O–CZT appeared. In addition, the work function of CZT decreased with the increasing oxygen exposure.     

Highly sensitive hydrogen detection by medium energy Ne+ impact

Hydrogen atoms on solid surfaces were measured directly by elastic recoil detection analysis (ERDA) using medium energy (100–150 keV) Ne⁺ ions with an excellent sensitivity of (～ 1 × 10¹² H/cm²) without any absorber foils and time-of-flight techniques. An electrostatic toroidal analyzer acquired H⁺ ions with energy around 11 keV recoiled from Si(111)-1 × 1-H surfaces. The H⁺ fraction strongly depends upon emerging angle and takes a value more than 50% at the angle below 70° and a saturated value of 17% at the angle above 80° with respect to surface normal. We detected H atoms on the reduced TiO₂(110) exposed to water molecules at room temperature (2 L) and estimated the absolute amount of H to be ～ 2.0 × 10¹⁴ H/cm² corresponding to ～ 38% (～ 0.38 ML) of the bridging oxygen atoms.     

Observation of intermolecular N–I interaction during the growth of a 4-cyano-4′-iodobiphenyl molecular crystal on GeS(001)

The electronic and atomic structures of 4-cyano-4′-iodobiphenyl (CIB) during the growth of a molecular crystal on a GeS(001) substrate were studied by ultraviolet photoemission spectroscopy (UPS), atomic force microscopy (AFM), and extended X-ray absorption fine structure (EXAFS) spectroscopy. AFM images suggest that the CIB molecule grows as a microcrystal at a nominal thickness of 80 Å. The microcrystal grows with the crystal plane parallel to the surface and isotropic crystal axis orientation. EXAFS analysis suggests that a CIB crystal forms by strong N···I interaction, called halogen bonding. The formation of the intermolecular N···I bond was demonstrated by EXAFS analyses in which the N–I distance was determined to be 3.29 Å. An upward shift of the highest occupied molecular orbital level was observed by UPS and can be attributed to the aggregation of CIB molecules caused by halogen bonding.