原子氢在Be(1010)薄膜上吸附的第一性原理计算

对原子氢在Be(1010)薄膜表面的吸附性质做了第一性原理计算研究.根据原子面间距的不同，可把Be(1010)表面分为两种.计算结果表明，原子氢在这两种表面上的吸附性质显著不同.为阐明和分析这些不同，系统计算和分析了Be(1010)薄膜的表面电子结构、电子功函数、平均静电势和局域电荷密度.这些物理量都自洽地表明，吸附过程中原子氢和表面铍原子间的电荷转移过程对于两种表面是完全不同的.对于L型表面来说，电荷由吸附原子氢向表面Be原子层转移，而对于S型表面而言，电荷转移过程恰恰相反. 关键词： 表面能 功函数 量子尺度效应     

H2O分子在Fe(100), Fe(110), Fe(111)表面吸附的第一性原理研究

采用第一性原理研究了H2O分子在Fe(100),Fe(110),Fe(111)三个高对称晶面上的表面吸附.结果表明,H2O分子在三个晶面上的最稳定结构皆为平行于基底表面的顶位吸附结构.H2O分子与三个晶面相互作用的吸附能及几何结构计算结果表明H2O分子与三个晶面的相互作用程度不同,H2O分子与Fe(111)晶面的相互作用最强,其次是Fe(100),相互作用最弱的是Fe(110)表面,而这与晶面原子的排列密度相关.吸附体系的电子结构计算结果也得出了相似的结论.同时电荷布居分析表明,H2O分子与Fe表面相互作用时,O原子与基底原子之间的电荷交换使基底Fe原子表面带负电,导致表面电位降低,也促使Fe表面更易于发生电化学腐蚀反应.     

Substitutional adsorption of K on Fe(100)

The adsorption of potassium on Fe(100) was studied by time-of-flight forward scattering and recoiling spectroscopy (TOF-SARS), low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). After heating to 650 K of the potassium saturated surface the formation of a p(3 × 3) potassium superstructure was observed by LEED. TOF-SARS experiments ruled out the adsorption of potassium in the on-top, bridge and four-fold hollow site. The only site which is in agreement with all experimental results is the substitutional site where K replaces an Fe atom of the topmost layer of the crystal. This is the first time a substitutional adsorption site has been found on a bcc surface. On an fcc surface such an adsorption site has been found recently for adsorption of sodium and potassium on Al(111).     

Energetics of atomic hydrogen diffusion on Si(100)

We present first principles calculations of the potential energy surface for the diffusion of a single hydrogen atom on Si(100)2 × 1. Surface relaxation is found to be very important for the energetics of diffusion. A strong anisotropy is predicted for hydrogen motion: H should diffuse mainly along dimer rows, where activation energies are ~ 1.3 eV, while the barrier for row-to-row hopping is ~ 0.5 eV higher. Our results indicate that diffusion can be considered a fast process compared to H₂ recombinative desorption.     

Be(0001)薄膜中的量子尺寸效应与吸附氢的第一性原理计算

通过基于密度泛函理论的第一性原理方法对铍自由表面的电子结构及表面原子氢的吸附能作了详细计算，给出Be(0001)薄膜的电子结构、表面能、电子功函数、层间弛豫等物理量随厚度变化关系，同时讨论了原子氢在Be(0001) 表面的吸附性质，给出了吸附能及局域电子态密度随铍薄膜层厚的变化关系，体现了铍薄膜的量子尺寸效应.     

First-principles study of Sr adsorption on InN (0001)

Structures of Sr adsorbed on InN (0001) surfaces are theoretically investigated by first-principles calculations. The adsorption energies of Sr on InN (0001) decrease with decreasing Sr coverage. An InN (0001)-(2 ×2) surface structure covered by a 1/4 monolayer of Sr at the T₄ sites may be the most energetically favourable. Sr atoms may substitute indium atoms, or accumulate at the voids inside InN films. The interstitial Sr defects may act as a potential source of compensation for the p-type behaviour of Sr-doped InN at the surface.     

The structure of atomic nitrogen adsorbed on Fe(100)

Nitrogen atoms adsorbed on a Fe(100) surface cause the formation of an ordered c(2 × 2) overlayer with coverage 0.5. A structure analysis was performed by comparing experimental LEED I–V spectra with the results of multiple scattering model calculations. The N atoms were found to occupy fourfold hollow sites, with their plane 0.27 Å above the plane of the surface Fe atoms. In addition, nitrogen adsorption causes an expansion of the two topmost Fe layers by 10% (= 0.14 Å). The minimum r-factor for this structure analysis is about 0.2 for a total of 16 beams. The resulting atomic arrangement is similar to that in the (002) plane of bulk Fe₄N, thus supporting the view of a “surface nitride” and providing a consistent picture of the structural and bonding properties of this surface phase.     

三氧化钨表面氢吸附机理的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法,在广义梯度近似下,研究了立方WO_3,WO_3(001)表面结构及其氢吸附机理.计算结果表明立方晶体WO_3理论带隙宽度为0.587 eV.WO_3(001)表面有WO终止(001)表面和O终止(001)表面两种结构,表面结构优化后W—O键长和W—O—W键角改变,从而实现表面弛豫;WO终止(001)表面和O终止(001)表面分别呈现n型半导体特征和p型半导体特征.分别计算了H原子吸附在WO终止(001)表面和O终止(001)表面的H—O_(2c)—H,H—O_(2c)…H—O_(2c),H—O_(1c)—H和H—O_(1c)…H—O_(1c)四种吸附构型,其中H—O_(1c)—H吸附构型的吸附能最小,H—O键最短,H失去电子数最多,分别为-3.684 eV,0.0968 nm和0.55e,此吸附构型最稳定.分析其吸附前后的态密度,带隙从吸附前的0.624 eV增加到1.004 eV,价带宽度基本不变.H的1s轨道电子与O的2p,2s轨道电子相互作用,在-8和-20 eV附近各形成了一个较强的孤立电子峰,两个H原子分别与一个O_(1c)原子形成化学键,最终吸附反应生成了一个H_2O分子,同时产生了一个表面氧空位.     

O2在Mo(001)表面吸附的第一原理研究

采用第一原理方法计算了O2分子在 Mo(001) 表面的吸附,得到了吸附构型的各种参数,并且计算了O2分子在 Mo(001) 表面4个位置（顶位,桥位,穴位垂直,穴位平行）吸附后的能量,结果表明在顶位吸附能最高。通过对O2分子在 Mo(001) 表面吸附的原子轨道电荷分布与态密度图的分析可以看出在吸附过程中主要是O原子的2p轨道电子与钼的4s和4d轨道电子的相互作用。     

O2在Mo(001)表面吸附的第一原理研究

采用第一原理方法计算了O2分子在 Mo(001) 表面的吸附,得到了吸附构型的各种参数,并且计算了O2分子在 Mo(001) 表面4个位置（顶位,桥位,穴位垂直,穴位平行）吸附后的能量,结果表明在顶位吸附能最高。通过对O2分子在 Mo(001) 表面吸附的原子轨道电荷分布与态密度图的分析可以看出在吸附过程中主要是O原子的2p轨道电子与钼的4s和4d轨道电子的相互作用。     

First-principles study of hydrogen adsorption on titanium-decorated single-layer and bilayer graphenes

The adsorption of hydrogen molecules on titanium-decorated （Ti-decorated） single-layer and bilayer graphenes is studied using density functional theory （DFT） with the relativistic effect. Both the local density approximation （LDA） and the generalized gradient approximation （GGA） are used for obtaining the region of the adsorption energy of H2 molecules on Ti-decorated graphene. We find that a graphene layer with titanium （Ti） atoms adsorbed on both sides can store hydrogen up to 9.51 wt% with average adsorption energy in a range from -0.170 eV to 0.518 eV. Based on the adsorption energy criterion, we find that chemisorption is predominant for H2 molecules when the concentration of H2 molecules absorbed is low while physisorption is predominant when the concentration is high. The computation results for the bilayer graphene decorated with Ti atoms show that the lower carbon layer makes no contribution to hydrogen adsorption.     

Reduction of oxidized Fe(100) by hydrogen

The interaction of hydrogen with the oxide layer on Fe(100) has been studied with ellipsometry, AES and LEED. The oxide layer formed at room temperature on Fe(100) rearranges at elevated temperatures, resulting in a reconstructed oxide phase in deeper layers, plus a single monolayer of oxygen on top of the surface. This monolayer is unchanged upon heating. These surfaces are exposed to hydrogen pressures up to 2 × 10⁻² Torr at crystal temperatures between 473 and 643 K. The reduction proceeds via a mechanism of dissociative adsorption of hydrogen on an oxygen filled site. A continuous transport of oxygen from deeper layers to the surface region occurs on a time scale which is fast in comparison with the observed reaction rate. These oxygen containing reaction sites are related to the reconstructed oxide, since a single monolayer of oxygen on Fe(100) is inactive to hydrogen in the pressure range measured. The apparent activation energy for the reaction between the oxide overlayer on Fe(100) and hydrogen is 59 ± 4 kJ/mol at the initial oxygen coverage.     

硫在Fe(100)面吸附的第一性原理研究

基于密度泛函理论的第一性原理方法,在广义梯度近似下,计算了硫原子在Fe(100)面吸附的结构和电子性质,并计算了其分子轨道和吸附能.同时讨论了相关吸附性质与硫原子表面覆盖度(0.25-1.0ML)的关系.结果表明：硫原子吸附在H位最稳定,吸附能均随浓度的增加而单调增加;B位吸附的硫原子与Fe(100)表面的距离随浓度非单调变化,在0.5ML时达到最大,是由较高的局域电子云重叠产生的排斥作用所导致的;对比分析吸附前后硫和Fe的s及p电子的态密度,显示了硫化亚铁的生成.     

硫在Fe(100)面吸附的第一性原理研究

基于密度泛函理论的第一性原理方法,在广义梯度近似下,计算了硫原子在Fe(100)面吸附的结构和电子性质,并计算了其分子轨道和吸附能.同时讨论了相关吸附性质与硫原子表面覆盖度(0.25～1.0ML)的关系.结果表明:硫原子吸附在H住最稳定,吸附能均随浓度的增加而单调增加;B位吸附的硫原子与Fe(100)表面的距离随浓度非单调变化,在0.5 ML时达到最大,是由较高的局域电子云重叠产生的排斥作用所导致;对比分析吸附前后硫和Fe的s及p电子的态密度,显示了硫化亚铁的生成.     

第一性原理分析二氧化碳在CaO(100)表面的吸附性能

运用广义梯度密度泛函理论（GGA-PW91）结合周期平板模型方法,研究了CO2分子分别在1×1×1和2×2×1CaO(100)超晶胞面最稳定位的吸附行为。结果表明：CaO(100)表面的Osurf原子为CO2分子的有效吸附位,能够和CO2分子形成稳定吸附键C-Osurf, 其吸附能为0.858 eV。在吸附前后C和Osurf原子的价电子组态分别由2s0.892p2.47和2s1.842p4.99变化为2s0.682p2.33和2s1.902p5.17,而且在CO2分子中的O2s原子与Surface层的Casub4s原子间存在相互作用。考察了多个CO2分子在2×2×1 CaO(100)表面吸附时存在分子间相互排斥作用,发现当四个CO2分子吸附到2×2×1CaO(100)超晶胞面时,排斥能为1.76 eV,不利于CO2分子的吸附。     

第一性原理分析二氧化碳在CaO(100)表面的吸附性能

运用广义梯度密度泛函理论（GGA-PW91）结合周期平板模型方法,研究了CO2分子分别在1×1×1和2×2×1CaO(100)超晶胞面最稳定位的吸附行为。结果表明：CaO(100)表面的Osurf原子为CO2分子的有效吸附位,能够和CO2分子形成稳定吸附键C-Osurf, 其吸附能为0.858 eV。在吸附前后C和Osurf原子的价电子组态分别由2s0.892p2.47和2s1.842p4.99变化为2s0.682p2.33和2s1.902p5.17,而且在CO2分子中的O2s原子与Surface层的Casub4s原子间存在相互作用。考察了多个CO2分子在2×2×1 CaO(100)表面吸附时存在分子间相互排斥作用,发现当四个CO2分子吸附到2×2×1CaO(100)超晶胞面时,排斥能为1.76 eV,不利于CO2分子的吸附。     

Fe3O4/MgO(100)薄膜外场诱导电阻变化特性

采用激光分子束外延（L-MBE）方法,以MgO(100)为基底生长了Fe3O4单晶薄膜, 研究了Fe3O4/MgO(100)薄膜外场（温度、磁和激光场）诱导电阻变化特性。X射线衍射(XRD)分析表明Fe3O4薄膜是沿MgO(200)晶面外延生长的单晶薄膜;反射高能电子衍射（RHEED）强度振荡曲线分析表明Fe3O4薄膜表面平整,而且生长模式为2维层状生长;原子力显微镜（AFM）分析表明Fe3O4薄膜表面粗糙度为0.201 nm,说明薄膜表面达到原子级平整度。外场作用下Fe3O4薄膜的电阻测试表明:薄膜样品的电阻在120 K(Verwey转变温度)出现一峰值,略微下降后继续增大, 展现出半导体型的导电特性; 在激光作用下,整个测量温度范围内薄膜样品的电阻减小,样品展示出瞬间光电导的特性;从降温曲线可以看出, Verwey转变温度由无激光作用时的120 K上升到有激光作用时的140 K; 光致电阻变化率随着温度的降低而增大,这主要是由于激光作用导致电荷有序态的退局域化。