Barrier height imaging of magnetic films: Use for studying the initial growth of Co films and the surface structure of FePt films

Barrier-height (BH) imaging using scanning tunneling microscopy (STM) was used to study the growth of Co films on Au(001) surfaces. We have observed BH of metastable bcc Co film (> 1 ML) for the first time, and that showed a large BH value (~ 6 eV), whereas the observed BH of the Au(001) surface (~ 3.5 eV) was consistent with the previous results. The origin of the large BH was qualitatively understood by considering that 3d electrons for tunneling are dominant for the Co(001) surface. We have observed numerous islands with different sizes and heights after 0.15 ML Co coverage and successfully obtained, from the BH imaging, an element-specific contrast, i.e. recognizing aggregated Au islands and Co islands, and information about inhomogenities of BH with proper consideration of the artifacts near the step edges. The height modification by the large BH difference is discussed.STM/BH studies of FePt films revealed two kinds of monolayer heights, the sum which was equal to the c axis lattice constant of L1₀ FePt. Two different dI/dz signal levels were observed on atomically flat terraces.     

The growth and field evaporation of Er and deuterated Er films

The morphological structure of clean and deuterated Er films deposited on W substrates and their removal by field evaporation have been investigated as part of a program directed toward the development of deuterium ion sources for neutron generators. Annealed Er films up to ~ 20 monolayers in thickness deposited on W < 110 > substrates appear pseudomorphic. Thicker annealed films form a hexagonal close-packed < 0001 > orientated over-layer with the Pitsch–Schrader orientation relation. The pseudomorphic and hexagonal close-packed character of the films is retained up to the last atomic layer that forms the film-substrate interface. Deuterated Er films appear polycrystalline. At 77 K in Ar, annealed Er films field evaporate at 2.5 V/Å primarily as Er^2 + and deuterated Er films evaporate at ~ 2.4 V/Å primarily as ErD_x^2 +. Field evaporation of both clean and deuterated Er films shows signs of space charge induced field lowering when film thicknesses exceeding ~ 10 layers were field evaporated using 20 ns duration voltage pulses.     

Reduction of thin-film ceria on Pt(111) by supported Pd nanoparticles probed with resonant photoemission

Local defects present in CeO_2 ? x films result in a mixture of Ce³⁺ and Ce⁴⁺ oxidation states. Previous studies of the Ce 3d region with XPS have shown that depositing metal nanoparticles on ceria films causes further reduction, with an increase in Ce³⁺ concentration. Here, we compare the use of XPS and resonant photoemission spectroscopy (RESPES) to estimate the concentration of Ce³⁺ and Ce⁴⁺ in CeO_2 ? x films grown on Pt (111), and the variation of this concentration as a function of Pd deposition. Due to the nature of the electronic structure of CeO_2 ? x, resonant peaks are observed for the 4d–4f transitions when the photon energy matches the resonant energy; (hν = 121.0 eV) for Ce³⁺ and (hν = 124.5 eV) for Ce⁴⁺. This results in two discrete resonant photoemission peaks in valence band spectra. The ratio of the difference of these peaks with off-resonance scans gives an indication of the relative contribution of Ce³⁺. Results from RESPES indicate reduction of CeO_2 ? x on deposition of Pd, confirming earlier findings from XPS studies.     

Ferromagnetism in Zn1−xCrxTe (x = 0.05, 0.15) films grown on GaAs(1 0 0) substrate

Zn_1−xCr_xTe (x = 0.05, 0.15) films were grown on GaAs(1 0 0) substrate by thermal evaporation method. X-ray diffraction analysis showed the presence of ZnCrTe phase without any secondary phase. The surface was analyzed by high resolution magnetic force microscope and profile measurements showed orientation of magnetic domains in the range of 0.5–2 nm with increase of Cr content. Magnetic moment–magnetic field measurements showed a characteristic hysteresis loop even at room temperature. The Curie temperature was estimated to be greater than 300 K. From the electron spin resonance spectra, the valence state of Cr in ZnTe was found to be +2 with d² electronic configuration. Hall effect study was done at room temperature and the result showed the presence of p-type charge carriers and hole concentration was found to increase from 5.95 × 10¹² to 6.7 × 10¹² m⁻³ when Cr content increases. We deduce the origin of ferromagnetic behavior based on the observed experimental results.     

Structure and magnetic properties of co-sputtered Co–C thin films

We studied the structure and magnetic properties of co-sputtered Co_1−xC_x thin films using a transmission electron microscope (TEM) and a SQUID magnetometer. These properties were found to depend critically on deposition temperature, T_S, and composition, x. Generally, phase separation into metallic Co and graphite-like carbon phases proceeds with increasing T_S and decreasing x. Plan view and cross-sectional TEM images of the films prepared showed that Co grains about 10–20 nm in diameter and 30–50 nm in height are three-dimensionally separated by graphite-like carbon layers 1–2 nm thick. Optimum magnetic properties with saturation magnetization of 380 emu/cc and coercivity of 400 Oe were obtained for a film with x=0.5 and T_S=350°C.     

Electric property of mixed conductor BaIn1−xCoxO3−δ

We synthesized BaIn_1−xCo_xO_3−δ (x = 0–0.8) with a defective perovskite structure by partly replacing In with Co in Ba₂In₂O₅. Based on XRD measurements, the synthesized compound was found to have cubic perovskite and orthorhombic brownmillerite structures depending on the amount of Co. BaIn_1−xCo_xO_3−δ (x = 0.2 and 0.3) showed high total electrical conductivities without undergoing the structural transformation that the original Ba₂In₂O₅ undergoes. Some of the samples showed both electronic and oxide ionic conductivities. At the same time, the oxide ionic conductivity was comparable with that of Ba₂In₂O₅. For example, the sample with x = 0.1 had a total electrical conductivity of 4.7 × 10^− 1 S cm^− 1 and an oxide ion transport number of 0.52 at 850 °C.     

Surface topographic study of chalcogenide thin films of GexSb(As)40−xS50Te10 glasses

The surface topography and fractal properties of Ge_xSb(As)_40−xS₅₀Te₁₀ (x = 10, 20, 27 at.%) films, evaporated onto glass substrates, have been studied by atomic force microscopic imaging at different scales. The surface of the chalcogenide films is smooth (<5 nm roughness), isotropic and having some particular differences in texture. All films are self-similar with Mean Fractal Dimension in the range of 2.25–2.63. The films with Ge_xSb_40−xS₅₀Te₁₀ composition are more uniform in terms of surface morphology (grains structure) than those with Ge_xAs_40−xS₅₀Te₁₀ composition for which the film surface exhibits a superimposed structure of large particles at x = 10 and 20 at.%.     

Mixed conducting perovskite-like ceramics on the base of lanthanum gallate

Ceramic perovskite solid solutions (La_0.9Sr_0.1)[(Ga_1−xM_x)_0.8Mg_0.2]O_3−y, 0 ≤ x ≤ 0.5, M = Fe, Ni, Cr (systems I–III) and brownmillerite solid solutions (La_0.2Sr_1.8)[Ga(Fe_1−xMg_x)]O_5−z, 0 ≤ x ≤ 0.5, (system IV) have been prepared. The samples have been studied by X-ray diffraction and electron microscopy methods, dielectric spectroscopy and permeability measurements. The correlation between the composition, unit cell parameter changes, electrical transport and oxygen permeation properties has been revealed. Introduction of transition metals (Fe, Ni, or Cr), substituting for gallium, ensures the enhancement of the electronic constituent of the conductivity in the perovskite systems I–III. Stabilization of the transition metal high valence states 4+ or 5+ has been suggested for compositions I and III. This leads to a unit cell volume contraction and provides a decrease in the concentration of oxygen vacancies. The oxygen permeability reaches its maximum values in compositions I–III with x ∼ 0.3. On the contrary, increasing concentration of the doping element with lower valence state (magnesium), substituting for iron, determines the expansion of the brownmillerite unit cell volume and provides an increase of the oxygen vacancy concentration, which in turn, favors the enhancement of oxygen permeability of composition IV.     

Electrical and mechanical properties of diluted magnetic semiconductor Zn1−xMnxS nanocrystalline films

Nanostructured Zn_1−xMn_xS films (0 ⩽ x ⩽ 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2 × 10⁻⁶ m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young’s modulus value ranging 69.7–94.2 GPa.     

Pressure and compositional dependence of electric conductivity in the (Mg1 − xFex)1 − δO (x = 0.01–0.40) solid-solution

(Mg_1 ? xFe_x)_1 ? δO (x = 0.01–0.43) single crystals (~ 8 mm in diameter) were made by a melt-growth method. Electrical conductivity measurements were carried out as functions of temperature and frequency by a complex impedance method under pressure (~ 43 GPa and ~ 673 K and at 0.1 MPa and ~ 1400 K). Our experimental results show a change in charge transport mechanism in the (Mg_1 ? xFe_x)_1 ? δO solid solution at high temperature. The temperature of inflection point of the slope in Arrhenius plots depend greatly on both composition and extrinsic factors of crystals. The low-temperature conduction mechanism in (Mg_1 ? xFe_x)_1 ? δO solid solution is small polaron. Pressure effect of the electric conductivity was observed and the conductivity increased to 0.5 at log scale of S/m with increasing pressure up to 43.4 GPa. The activation energy was decreased linearly with increasing pressure. Chemical composition and homogeneity of specimen rather than pressure greatly influence the electric conductivity. The activation energy of 2.37(4) eV for the (Mg_0.99Fe_0.01)_1 ? δO solid solution might correspond to a migration enthalpy of O ions through thermally formed defects. It is proposed that a possible dominant electrical conduction mechanism in ferropericlase under the lower mantle conditions, at least in the higher temperature region, is super ionic conduction.     

Electronic property and structure of double-doping Y1−2xPrxCaxBa2Cu3O7−δ with 0 ⩽ x ⩽ 0.14

Equal amount Pr and Ca double-doping Y_1?2xPr_xCa_xBa₂Cu₃O_7?δ with 0 ? x ? 0.14 have been investigated by X-ray diffraction, resistivity, and X-ray photoemission spectroscopy (XPS). The deviation of the linearly decreasing of T_c vs. x curve was observed when x < 0.10. The resistivity and the temperature coefficient of resistivity also exhibit abnormal behaviors around x = 0.10. It is revealed that the conductivity behavior of Y_1?2xPr_xCa_xBa₂Cu₃O_7?δ with low Pr content (x < 0.10) is different from that of the relative high Pr content (x > 0.10), which suggests a change of Pr valence with the Pr content. XPS measurement shows that the relative amount of Pr³⁺ and Pr⁴⁺ is closely related to the total Pr content x. The valence of Pr is close to +3 when x < 0.10 and increases towards +4 when x > 0.10, which implies a different mechanism for depression of superconductivity of Pr content x < 0.10 from that of Pr content x > 0.10 in Pr doping Y-123.     

Transitional metal-doped 8 mol% yttria-stabilized zirconia electrolytes

The sintering, grain growth and ionic conductivities (especially the grain-boundary (GB) conductivity), of 8YSZ electrolytes with various silica levels (~ 30 ppm, ~ 500 ppm and ~ 3000 ppm), doped with 1 at% transitional metal oxides (TMOs), have been systematically investigated by means of dilatometer, electron microscopy and impedance analyzer. It is confirmed that small additions of TMOs (i.e., Fe, Mn, Co or Ni) promote the densification and grain growth of both the pure and Si-containing 8YSZ. The effect of TMOs on the ionic conductivities could be negative or positive, relying on the type of TMOs, sintered density and impurity level. For the dense and pure 8YSZ (with ~ 30 ppm SiO₂), the addition of 1 at% TMOs led to a reduction in grain interior (GI) conductivity by ~ 25–33% with little effect on the GB conduction. For the impure 8YSZ (with ~ 500 ppm or 3000 ppm SiO₂), except for FeO_1.5, the other TMOs (i.e., Mn, Co or Ni) are extremely detrimental to the total conductivity by significantly reducing the GB conduction. Moreover, it is also found that the GB conductivity of the impure 8YSZ doped with Co or Ni is less sensitive to sintering temperature. FeO_1.5 showed a scavenging effect on SiO₂ in the impure 8YSZ, which is specially beneficial to the total conductivity of samples with higher silica levels and/or sintered at relatively low temperatures.     

The effect of copper concentration on structural,optical and dielectric properties of CuxZn1 − xS thin films

Cu_xZn_1 ? xS (x = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The copper concentration (x) effect on the structural, morphological and optical properties of Cu_xZn_1 ? xS thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing copper concentration. The energy bandgap values were changed from 2.07 to 3.67 eV depending on the copper concentration. The refractive index (n), optical static and high frequency dielectric constants (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the copper concentration.     

High-field magnetostriction in CeNiSn1−xGex (0≤x≤1) strongly correlated systems

Magnetization (down to 1.8 K and up to 9 T) and magnetostriction (down to 4.2 K and up to 30 T) measurements have been performed in the series of polycrystalline intermetallics CeNiSn_1?xGe_x (0≤x≤1), which show a crossover from Kondo-lattice to fluctuating valence behaviors with x increase. Magnetostriction observed can be denominated as “colossal” for a paramagnet (up to 0.68% at 150 K and 30 T), with no sign of saturation. Field, H, induced metamagnetic transitions associated to a change in Ce valence are observed. Three kinds of analysis of magnetostriction have been performed to ascertain the magnetostriction origin. At relatively low field and low temperatures these systems follow well the standard theory of magnetostriction (STM), revealing single-ion crystal field and exchange origins, and a determination of the α-symmetry microscopic magnetoelastic parameters have been performed. The valence transition is well explained in terms of the interconfigurational model, which needs an extension up to power H⁴. Application of the scaling (thermodynamics corresponding low states) allows the obtainment of the Grüneisen constant, which increases with x. Needed elastic constants measurements are also reported.     

Electrical conductivity of (Ba0.3Sr0.2La0.5)(In1−xFex)O3−δ

We have synthesized the perovskite oxides of the (Ba_0.3Sr_0.2La_0.5)(In_1−xFe_x)O_3−δ system and measured the total electrical conductivity as a function of temperature and oxygen partial pressure. It was found that the single-phase composition region extended from x = 0.0 to x = 1.0, and that the Fe valence increased from 3.06 to 3.50 in that region. The electrical conductivity was semiconducting from x = 0.0 to x = 0.40 and metallic from x = 0.50 to x = 1.0. The total electrical conductivity at 800 °C also increased with the Fe content and achieved a maximum value of 140 (S/cm) at x = 1.0. From the dependence of the electrical conductivity on the oxygen partial pressure, we conclude that above x = 0.50, the majority carriers are holes. The estimated hole conductivity increased exponentially with the amount of Fe⁴⁺ cation present. The oxide ion conductivity was dependent on the oxygen vacancy content.     

Nb doping effect on TiO2−x films for bolometer applications

Nb-doped TiO_2−x thin films were deposited using a 1 at% niobium doped titanium target by RF reactive magnetron sputtering at various oxygen partial pressures (pO₂). The films appeared amorphous in the pO₂ range of 4.4–4.7% with resistivity ranging from 0.39 Ω cm to 2.48 Ω cm. Compared to pure TiO_2−x films, the resistivity of the Nb-doped TiO_2−x films did not change sensitively with the oxygen partial pressure, indicating that the resistivity of the films can be accurately controlled. 1/f noise parameter of Nb-doped TiO_2−x films were found to decrease largely while the measured temperature coefficient of resistance (TCR) of the films was still high. The obtained results indicate that Nb-doped TiO_2−x films have great potential as an alternative bolometric material.     

Preparation,surface state and band structure studies of SrTi(1 − x)Fe(x)O(3 − δ) (x = 0–1) perovskite-type nano structure by X-ray and ultraviolet photoelectron spectroscopy

In this report, SrTi_(1 ? x)Fe_(x)O_(3 ? δ) photocatalyst powder was synthesized by a high temperature solid state reaction method. The morphology, crystalline structures of obtained samples, was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscopy (TEM), respectively. The electronic properties and local structure of the perovskite STF_x (0 ≤ x ≤ 1) systems have been probed by extended X-ray absorption fine structure (EXAFS) spectroscopy. The effects of iron doping level x (x = 0–1) on the crystal structure and chemical state of the STF_x have been investigated by X-ray photoelectron spectroscopy and the valence band edges for electronic band gaps were obtained for STF_x by ultraviolet photoelectron spectroscopy (UPS). A single cubic perovskite phase of STF_x oxide was successfully obtained at 1200 °C for 24 h by the solid state reaction method. The XPS results showed that the iron present in the STF_x perovskite structure is composed of a mixture of Fe³⁺ and Fe⁴⁺ (SrTi_(1 ? x)[Fe³⁺, Fe⁴⁺]_(x)O_(3 ? δ)). When the content x of iron doping was increased, the amount of Fe³⁺ and Fe⁴⁺ increased significantly and the oxygen lattice decreased on the surface of STF_x oxide. The UPS data has confirmed that with more substitution of iron, the position of the valence band decreased.     

Influence of growth morphology on the Néel temperature of CrRu thin films and heterostructures

Dimensionality effects on epitaxial and polycrystalline Cr_1?xRu_x alloy thin films and in Cr/Cr–Ru heterostructures are reported. X-ray analysis on Cr_0.9965Ru_0.0035 epitaxial films indicates an increase in the coherence length in growth directions (1 0 0) and (1 1 0) with increasing thickness (d), in the range 20≤d≤300 nm. Atomic force microscopy studies on these films shows pronounced vertical growth for d>50 nm, resulting in the formation of columnar structures. The Néel temperatures (T_N) of the Cr_0.9965Ru_0.0035 films show anomalous behaviour as a function of d at thickness d≈50 nm. It is interesting to note that this thickness corresponds to that for which a change in film morphology occurs. Experiments on epitaxial Cr_1?xRu_x thin films, with 0≤x≤0.013 and d=50 nm, give T_N–x curves that correspond well with that of bulk Cr_1?xRu_x alloys. Studies on Cr/Cr_0.9965Ru_0.0035 superlattices prepared on MgO(1 0 0), with the Cr layer thickness varied between 10 and 50 nm, keeping the Cr_0.9965Ru_0.0035 thickness constant at 10 nm, indicate a sharp decrease in T_N as the Cr separation layers reaches a thickness of 30 nm; ascribed to spin density wave pinning in the Cr layers for d<30 nm by the adjacent CrRu layers.     

Synthesis and visible light photocatalysis water splitting property of chromium-doped Bi4Ti3O12

Photocatalysts Bi₄Ti_3 ? xCr_xO₁₂(x = 0.00, 0.06, 0.15, 0.30, 0.40, and 0.50) with perovskite structure were synthesized by sol–gel method and their electronic structures and photocatalytic activities were investigated. The Bi₄Ti_2.6Cr_0.4O₁₂ photocatalyst exhibited the highest performance of H₂ evolution in methanol aqueous solution (58.1 μmol h^? 1 g^? 1) under visible light irradiation (λ > 400 nm) without a co-catalyst, whereas no H₂ evolution is observed for Bi₄Ti₃O₁₂ under the same conditions. The UV–vis spectra indicated that the Bi₄Ti_2.6Cr_0.4O₁₂ had strong photoabsorption in the visible light region. The results of density functional theory (DFT) calculation illuminate that the conduction bands of Bi₄Ti₃O₁₂ are mainly attributable to the Ti 3d + Bi 6p orbitals, and the valence bands are composed of O 2p + Bi 6s hybrid orbitals, while the conduction bands of chromium-doped Bi₄Ti₃O₁₂ are mainly attributable to the Ti 3d + Bi 2p + Cr 3d orbitals, and the O 2p + Cr 3d hybrid obitals are the main contribution to the valence band.