Concept of infrared photodetector based on graphene–graphene nanoribbon structure

We study the mechanisms of photoconductivity in graphene layer–graphene nanoribbon–graphene layer (GL–GNR–GL) structures with the i-type gapless GL layers as sensitive elements and I-type GNRs as barrier elements. The effects of both an increase in the electron and hole densities under infrared illumination and the electron and hole heating and cooling in GLs are considered. The device model for a GL–GNR–GL photodiode is developed. Using this model, the dark current, photocurrent, and responsivity are calculated as functions of the structure parameters, temperature, and the photon energy. The transition from heating of the electron–hole plasma in GLs to its cooling by changing the incident photon energy can result in the change of the photoconductivity sign from positive to negative. It is demonstrated that GL–GNR–GL photodiodes can be used in effective infrared and terahertz detectors operating at room temperature. The change in the photoconductivity sign can be used for the discrimination of the incident radiation with the wavelength 2–3 μm and 8–12 μm.     

Localized vibrational,edges and breathing modes of graphene nanoribbons with topological line defects

Peculiar vibrational modes of graphene nanoribbons (GNRs) with topological line defects were presented. We find that phonon dispersion relations of the topological defective GNRs are more similar to those of perfect armchair-edge GNR than to zigzag-edge GNR in spite of their zigzag edge. All vibrational modes at Γ point are assigned in detail by analyzing their eigenvectors and are presented by video. Three types of characteristic vibrational modes, namely, localized vibrational modes in defect sites, edges, and breathing modes, are observed. Five localized vibrational modes near the defect sites are found to be robust against the width of the topological line-defective GNR. The Raman D’ band just originates from one localized mode, 1622 cm^-1. The vibrational mode is sensitive to symmetry. The edge modes are related with structural symmetry but not with widths. Two edge modes are asymmetrical and only one is symmetrical. The breathing modes are inversely proportional to the width for wide-defect GNRs, and inversely proportional to the square root of the width for narrow-defect GNRs. The breathing mode frequencies of defective GNRs are slightly higher than those of perfect GNRs. These vibrational modes may be useful in the manipulation of thermal conductance and implementation of single phonon storage.     

Transport properties of the two-dimensional electron gas in wide AlP quantum wells including temperature and correlation effects

We investigate the mobility, magnetoresistance and scattering time of a quasi-two-dimensional electron gas in a GaP/AlP/GaP quantum well of width L>L_c=45.7 Å at zero and finite temperatures. We consider the interface-roughness and impurity scattering, and study the dependence of the mobility, the resistance and scattering time ratio on the carrier density and quantum well width for different values of the impurity position and temperature using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of Gold and Marty (Phys. Rev. B. 76 (2007) 165309) [3]. We also study the correlation and multiple scattering effects on the total mobility and the critical density for a metal–insulator transition.     

Theoretical investigation of plasmonic enhancement of silica-coated gold nanorod on molecular fluorescence

The plasmonic enhancement or quenching effects of a silica-coated gold nanorod (GNR@SiO₂) on the fluorescence of a molecule doped in the silica layer are studied using the multiple multipole method. The enhancement factors (EF) of a GNR with a typical aspect ratio of 3 coated by a 13 nm silica layer upon the fluorescence of a molecule embedded at different locations with various orientations irradiated by a plane wave are analyzed, particularly at the longitudinal surface plasmon resonance (SPR) of GNR. The numerical results show that the EF of a GNR@SiO₂ on the fluorescence is sensitive to the molecular location and orientation. Furthermore, an effective EF (EEF), which is an average of EF over all possible orientations at a specific location, is calculated. According to EEF, the proximities of the end-caps of a GNR are strong enhancing zones. In contrast, the waist area is the weak zone. Moreover, a bigger GNR (a=10 nm) possesses a higher EEF than a smaller one (a=7 nm) for the same aspect ratio and the molecular relative location. Hence, a strong enhancement on the fluorescence is obtained using bigger GNR, if the molecule is near the end-cup and the dipole orientation is along the long axis. On the contrary, the consequence could be quenching, if the molecule is near the waist of a small GNR. The Stokes shift of fluorescence can also affect the EF, except the excitation wavelength.     

n doping effect modeling in 1.3 μm GaN0.58yAs1−1.58yBiy/GaAs quantum wells

The effect of n doping on the band structure of lattice-matched GaNAsBi/GaAs quantum wells was investigated using a self-consistent calculation combined with the 16-band anti-crossing model. Bi/N incorporation and doping effects can offer a huge potential to engineer the electronic band structure of such materials suitable for the design of photodetectors and emitters operating at 1.3 µm. The increase of the doping density induces a blue-shift of the fundamental transition energy in the doping range between 6×10¹⁷ and 5×10¹⁸ cm⁻³. The absorption spectra dependence on the well width are discussed. To maintain the fundamental transition fixed at the wavelength 1.3 µm, we have adjusted the Bi composition for the well width range between 4.5 and 10 nm with respect of the confinement conditions.     

Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga_1 − xIn_xAsSb/p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures. Interface roughness scattering was found to dominate the electron mobility atT = 4.2–47 K in samples with an undoped or a slightly doped quaternary layer. A drastic mobility drop with increasing Zn doping level was observed. Shubnikov–de Haas oscillations at low temperatures (1.5–20 K) were studied and a weak anisotropy of magnetoresistance was found. Some important parameters of the heterostructures under study were determined.     

Manganese doping influence on the plasmon energy of nickel films

Manganese doping in nickel films capped with copper have been prepared by evaporation in vacuum. The films are composed of grains with an average diameter of ~ 20 nm from scanning electron microscope scans. Optical absorption is measured over a wavelength range of 190–450 nm. Two plasmon peaks are observed at 3.30 eV and 4.45 eV for a range of concentrations of films. The 4.45 eV peak is a bulk plasmon peak that is enhanced by increasing the manganese in nickel. The 3.30 eV peak is a surface plasmon peak that increases in width or strength of plasmon resonance with increasing concentration of manganese. This may be a combination effect of charge carrier concentration and dielectric screening from the reformed electronic band structure caused by manganese doping. By adding manganese into nickel, the ferromagnetic order is further destroyed as a transition into a spin glass occurs. This spin glass behavior is seen in a coercivity measurement at 4 K where the coercivity drops precipitously as the doping concentration increases.     

Bi-dipole excited plasmonic modes of an elongated gold nanorod

The first and higher-order longitudinal surface plasmon resonance (SPR) modes of an elongated gold nanorod (GNR) induced by the photoluminescence of two quantum dots (QDs) respectively located at the two ends were studied theoretically. Two configurations of a GNR combined with a symmetric or anti-symmetric bi-dipole were simulated and analyzed using the multiple multipole method. The results show that the local maxima of the radiative and nonradiative powers of the bi-dipole are at these modes. When the aspect ratio (AR) of GNR exceeds a specific value, not only the first mode but also the second, third and even fourth modes are generated. For example, for an elongated GNR (radius: 30 nm, AR=7) in water, the first, second, third and fourth modes are at 1800 nm, 930 nm, 680 nm and 600 nm, respectively. These SPR modes depend on the AR as well as the radius of GNR. The larger the AR is, the more the red-shift of these modes will be. In addition, the red-shift increases as the radius increases. Moreover, the odd modes are induced by the anti-symmetric bi-dipole, but suppressed by the symmetric one. On the contrary, the even modes are induced by the symmetric bi-dipole, but suppressed by the anti-symmetric one. In comparison with the scattering and absorption cross sections of GNR irradiated by a plane wave, the high-order modes, particularly the even modes, can be easily induced by the bi-dipole. Moreover, the mutual excitation rate of the two QDs is also enhanced through these modes of GNR.     

Control of electric field in 4H-SiC UMOSFET: Physical investigation

In this paper, we show how breakdown voltage (V_BR) and the specific on-resistance (R_on) can be improved simply by controlling of the electric field in a power 4H-SiC UMOSFET. The key idea in this work is increasing the uniformity of the electric field profile by inserting a region with a graded doping density (GD region) in the drift region. The doping density of inserted region is decreased gradually from top to bottom, called Graded Doping Region UMOSFET (GDR-UMOSFET). The GD region results in a more uniform electric field profile in comparison with a conventional UMOSFET (C-UMOSFET) and a UMOSFET with an accumulation layer (AL-UMOSFET). This in turn improves breakdown voltage. Using two-dimensional two-carrier simulation, we demonstrate that the GDR-UMOSFET shows higher breakdown voltage and lower specific on-resistance. Our results show the maximum breakdown voltage of 1340 V is obtained for the GDR-UMOSFET with 10 µm drift region length, while at the same drift region length and approximated doping density, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 V and 703 V, respectively.     

Electronic properties of graphene nanoribbon doped by boron/nitrogen pair: a first-principles study

By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.     

Correlation between phosphorus concentration and opto-electrical properties of doped a-Si:H films

Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark conductivity measurements, and spectrophotometric optical measurements through the range 200–3000 nm were recorded for the prepared films. The DC conductivity activation energy E_a decreased from 0.8 eV for the undoped sample to 0.34 eV for the highest used doping value. The optical energy gap E_g decreased ranging from 1.66 eV to 1.60 eV. The refractive index n, the density of charge carriers N/m* and the plasma frequency ω_p showed an opposite behavior, i.e. an increase in value with doping. Fitting the dispersion values to Sellmeier equation led to the determination of the material natural frequency of oscillating particles. A correlation between the changes in these parameters with the doping has been attempted.     

C-QWIP focal plane arrays

We have been developing corrugated quantum well infrared photodetector (C-QWIP) technology for long wavelength applications. A number of large format 1024 × 1024 C-QWIP focal plane arrays (FPAs) have been demonstrated. In this paper, we will provide a detailed analysis on the FPA performance in terms of quantum efficiency η and compare it with a detector model. We found excellent agreement between theory and experiment when both the material parameters and the pixel geometry were taken into account. By changing the number of quantum wells, doping density, spectral bandwidth and pixel size, a range of η from 13% to 37% was obtained. This range of η, combined with the wide spectral width, enables C-QWIPs to be operated at a high speed. For example, model analysis shows that a C-QWIP FPA with 10.7 μm cutoff and 25 μm pitch will have a thermal sensitivity of 16 mK at 2 ms integration time with f/2 optics in the presence of 900 readout noise electrons.     

Chirped Bloch oscillations in strain-balanced InGaAs/InGaAs superlattices

Bloch oscillations excited in a strain-balanced In_xGa_1 − xAs/In_yGa_1 − yAs superlattice by fs optical pulses at 1.55 μ m are investigated in time-resolved transmission spectroscopy. The transition from the coherent oscillatory motion to an incoherent drift transport of the electrons is observed via a transient frequency shift of the Bloch oscillations due to the associated screening of the applied electric field. These electric field changes are analyzed quantitatively as a function of the initial field strengths and excitation densities. The incoherent transport can be described by a drift-diffusion model. As a result, the carrier mobility in the superlattice is obtained on a picosecond timescale.     

Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

In this work, we investigate the effect of the δ-Si doping on the barrier and the spacer thickness on the electronic properties of AlGaAs/GaAs HEMTs structures grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. Photoluminescence measurements as function of the temperature are used to determine the relaxation processes of the electron and the hole in the channel. The photoluminescence characterizations of Si-delta-doped AlGaAs/GaAs HEMTs structures have been studied in the 10–300 K temperature range. Low temperature PL spectra show the optical transition (E_e–h) that occurs between the fundamental states of electrons to holes in the GaAs channel. Increase of the Si-δ-doping density and decrease of the spacer width improve the two-dimensional electron gas confinement and decrease defects densities in the canal. The band structure of Si-delta-doped AlGaAs/GaAs HEMTs structures at T = 10 K has been studied theoretically using the finite differences method to self-consistently and simultaneously solve Schrödinger and Poisson equations written within the Hartree approximation.     

InAs/GaSb strained layer superlattice detectors with nBn design

We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature-dependent dark current, responsivity and detectivity were measured. At T = 77 K and V_b = 0.1 V, with two orders of magnitude change in doping concentration, the dark current density increased from ～0.3 mA/cm² to ～0.3 A/cm². We attribute this to a depletion region that exists at the AlGaSb barrier and the SLS absorber interface. The device with non-intentionally doped absorption region demonstrated the lowest dark current density (0.3 mA/cm² at 0.1 V) with a specific detectivity D¹ at zero bias equal to 1.2 × 10¹¹ Jones at 77 K. The D¹ value decreased to 6 × 10¹⁰ cm Hz^1/2/W at 150 K. This temperature dependence is significantly different from conventional PIN diodes, in which the D¹ decreases by over two orders of magnitude from 77 K to 150 K, making nBn devices a promising alternative for higher operating temperatures.     

Performance of mid-wave T2SL detectors with heterojunction barriers

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10⁻⁶ A/cm² at −0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p–i–n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.     

Investigation of delta-doped quantum wells for power FET applications

We report the use of strain-balanced quantum-well structures to generate high carrier density, high mobility layers suitable for power field effect transistor (FET) applications. Standard designs of modulation-doped heterojunctions have a sheet carrier density limited to a maximum of ∼3 ×  10¹²cm⁻², while doped channel devices allow higher densities, but with degraded mobility. By combining the technique of delta-doping with the use of a compositionally graded InGaAs quantum well, grown strain balanced on InP, high mobilities and excellent saturation drift velocities have been obtained for sheet densities of 4–5 ×  10¹²cm⁻². This paper describes the structure and electrical properties of the layers and assesses their potential for FETs.     

Low temperature electron mobility in a coupled quantum well system

We study low temperature electron mobility μ_nin a GaAs/Al_x Ga _1 − xAs coupled double quantum well structure. Both the extreme barriers are δ -doped with Si so that the electrons diffuse into the adjacent wells forming two sheets of two-dimensional electron gas (2DEG) separated by a thin central barrier. The subband electron wavefunctions and energy levels are numerically obtained as a function of the well width, barrier width and doping concentration. The screening of ionized impurity potential by the 2D-electrons is obtained in terms of the static dielectric response function within the random phase approximation (RPA). μ_nis calculated by solving the coupled Boltzmann equation in the relaxation time approximation. The coupling of wavefunctions through the barrier, screening of ionized impurities and intersubband scattering effects on μ_nare investigated.     

Effect of Sn doping on the structural,optical and electrical properties of TiO2 films prepared by spray pyrolysis

In this work, highly oriented pure and Tin-doped Titanium dioxide (Sn-doped TiO₂) with porous nature photoelectrodes were deposited on ITO glass plates using spray pyrolysis technique. The XRD pattern revealed the formation of anatase TiO₂ with the maximum intensity of (101) plane while doping 6 at% of Sn. The morphological studies depicted the porous nature with the uniform arrangement of small-sized grains. The presence of tin confirmed with the EDX spectra. The size of particles of 13 nm was observed from High Resolution Transmission Electron Microscopy (HR-TEM) analysis. The average transmittance was about 85% for the doped photoelectrode and was observed for the photoelectrode deposited with 6 at% of tin, with decreased energy band gap. The PL study showed the emission peak at 391 nm. The maximum carrier concentration and Hall mobility was observed for the photoelectrode deposited with 6 at% of tin. With these studies, the DSSCs were prepared separately with the dye extracted from Hibiscus Rosasinesis and Hibiscus Surttasinesis and their efficiency was maximum for the DSSC prepared with 6 at% of tin.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.