Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Optical,electrical, and electrochemical behavior of p-type nanostructured SnO<Subscript>2</Subscript>:Ni (NTO) thin films

The physical and electrochemical properties of sol-gel synthesized nickel-doped tin oxide (NTO) thin films were investigated. The X-ray diffraction results showed that NTO samples exhibited a tetragonal structure. The average crystallite size and the unit cell volume of the films were reduced by Ni increment, while the stacking fault probability was increased. Furthermore, the field-emission scanning electron microscopy images clearly displayed that the worm-like surface morphology of the SnO₂ thin films was altered to the spherical feature in 3 and 10 mol% NTO samples. Moreover, by virtue of Ni incorporation, the average transparency of the SnO₂ thin films rose up from 67 to 85% in the visible region; also, the optical band gap of the SnO₂ sample (3.97 eV) increased and the thin film with 3 mol% dopant concentration showed a maximum value of 4.22 eV. The blue/green emission intensities of photoluminescence spectra of SnO₂ thin film changed via Ni doping. The Hall effect measurements revealed that by Ni addition, the electrical conductivity of tin oxide thin films altered from n- to p-type and the carrier concentration of the films decreased due to the role of Ni²⁺ ions which act as electron acceptors in NTO films. In contrast, 20 mol% Ni-doped sample had the highest mobility about 9.65 cm² (V s)^?1. In addition, the cyclic voltammogram of NTO thin films in KOH electrolyte indicated the charge storage capacity and the surface total charge density of SnO₂ thin films enhanced via Ni doping. Moreover, the diffusion constant of the samples increased from 2?×?10^?15 to 6.5?×?10^?15 cm² s^?1 for undoped and 5 mol% dopant concentration. The electrochemical impedance spectroscopy of the NTO thin films in two different potentials showed the different electrochemical behaviors of n- and p-type thin films. It revealed that the 20 mol% NTO thin film had maximum charge transfer at lower applied potential.     

Characterisation of redox states of Ni(La)-hydroxide films prepared via the sol-gel route by ex situ IR spectroscopy

Ni(La)-hydroxide films were prepared from aqueous colloidal solutions containing nickel sulfate and lanthanum acetate in the molar ratio 10:1. Two types of film were made by heating for 15 and 60?min at 300?°C. Thermogravimetry (TG) and X-ray diffraction (XRD) reveal that both films consist of NiO (bunsenite 40%) nanoparticles (particle size?～30?Å), the remainder being amorphous. IR spectroscopy showed that the amorphous phase comprised the α(II)-Ni(OH)₂ phase incorporating SO₄ ^2?, carboxylate and water species. Cyclic voltammetry (CV) in a 0.1?M LiOH electrolyte combined with in situ UV-VIS spectroscopy revealed that the colouring/bleaching changes, as a function of applied potential, differed considerably for the two types of film. Ex situ IR spectroelectrochemical measurements at near-grazing incidence angle conditions using P-polarised light (NGIA IR) were performed for films heated for 60?min in 0.1?M LiOH and 0.1?M tetramethylammonium hydroxide (TMAH) electrolytes and cycled 1402 and 1802 times. During the oxidation/reduction cycles the α(II)-Ni(OH)₂ phase transforms to the γ(III)-NiOOH phase, while the β(II)-Ni(OH)₂ did not develop. This explains the high cycling stability of Ni(La)-hydroxide films. The incorporation of TMA⁺ ions was observed from the ν(CH₃) stretching band intensities in the IR spectra of cycled films.     

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

Structural and electrical properties of HfO₂ gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering are investigated. The HfO₂ high-k thin films have been deposited on p-type <100> silicon wafer using RF-Magnetron sputtering technique. The Ellipsometric, FTIR and AFM characterizations have been done. The thickness of the as deposited film is measured to be 35.38 nm. Post deposition annealing in N₂ ambient is carried out at 350, 550, 750 °C. The chemical bonding and surface morphology of the film is verified using FTIR and AFM respectively. The structural characterization confirmed that the thin film was free of physical defects and root mean square surface roughness decreased as the annealing temperature increased. The smooth surface HfO₂ thin films were used for Al/HfO₂/p-Si MOS structures fabrication. The fabricated Al/HfO₂/p-Si structure had been used for extracting electrical properties such as dielectric constant, EOT, interface trap density and leakage current density through capacitance voltage and current voltage measurements. The interface state density extracted from the G–V measurement using Hill Coleman method. Sample annealed at 750 °C showed the lowest interface trap density (3.48 × 10¹¹ eV⁻¹ cm⁻²), effective oxide charge (1.33 × 10¹² cm⁻²) and low leakage current density (3.39 × 10⁻⁹ A cm⁻²) at 1.5 V.     

Effect of Lithia and Substrate on the Electrochemical Performance of a Lithia/Cobalt Oxide Composite Thin‐Film Anode

Highly porous reticular Li₂O/CoO composite thin films fabricated by electrostatic spray deposition were investigated by using X-ray diffraction, scanning electron microscopy, galvanostatic cell-cycling measurements, and AC impedance spectroscopy measurements. The results of the electrochemical tests indicate that the initial coulombic efficiency and capacity retention are dependent on Li₂O content and the specific surface area of the deposited layer. Irrespective of the type of substrate, the electrode gave the best electrochemical performance when the molar ratio of Li to Co was controlled at 1:1. At the optimal composition, at 0.2 C the initial coulombic efficiency was as high as 81.9 % and 83.6 % for the film on Cu foil and on porous Ni, respectively. The Li₂O/CoO (Li/Co=1:1) films on Ni foam and Cu foil had sustained capacities of up to 790 and 715 mAh g⁻¹, respectively, at a rate of 1 C over 100 cycles at 25 °C. Similar cycling experiments carried out at 70 °C showed that the capacity is temperature-sensitive, and it exhibited reversible capacities as high as 1018 (Cu foil) and 1269 mAh g⁻¹ (Ni foam) for up to 100 cycles. The thin-film electrodes on Ni foam always performed better than those on Cu foil. Cycling at elevated temperature (70 °C) also resulted in a significant increase in capacity.     

Effect of sol temperature on the structure,morphology, optical and photoluminescence properties of nanocrystalline zirconia thin films

Transparent nanocrystalline zirconia thin films were prepared by sol–gel dip coating technique using Zirconium oxychloride octahydrate as source material on quartz substrates, keeping the sol at room temperature (SET I) and 60 °C (SET II). X-ray diffraction (XRD) pattern shows the formation of mixed phase [tetragonal (T) + monoclinic (M)] in SET I and a pure tetragonal phase in SET II ZrO₂ thin films annealed at 400 °C. Phase transformation from tetragonal to monoclinic was achieved in SET II film annealed at 500 °C. Atomic force microscopy analysis reveals lower rms roughness and skewness in SET II film annealed at 500 °C indicating better optical quality. The transmittance spectra gives a higher average transmittance >85% (UV–VIS region) in SET II films. Optical spectra indicate that the ZrO₂ films contain direct—band transitions. The sub- band in the monoclinic ZrO₂ films introduced interstitial O⁻defect states above the top of the valance band. The energy bandgap increased (5.57–5.74 eV) in SET I films and decreased (5.74–5.62 eV) in SET II films, with annealing temperature. This is associated with the variations in grain sizes. Photoluminescence (PL) spectra give intense band at 384 and 396 nm in SET I and SET II films, respectively. A twofold increase in the PL intensity is observed in SET II film. The “Red” shift of SET I films and “Blue” shift of SET II films with annealing temperature, originates from the change of stress of the film due to lattice distortions.     

α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films by liquid phase deposition: low-cost option for supercapacitor

In the present study, iron oxide (α-Fe₂O₃) thin films with good adhesion on stainless steel substrates are deposited by liquid phase deposition (LPD) technique, which is additive and binder-free. Iron oxyhydroxide (FeOOH) thin films are formed by means of a ligand-exchange equilibrium reaction of metal-fluoro complex ions and an F^?ions consuming reaction by using boric acid (H₃BO₃) as a scavenging agent. These films are annealed at 500 °C to get α-Fe₂O₃ thin films. The transformation from hydrophobic to hydrophilic nature of the films is observed due to annealing. The films are characterized by different techniques. The α-Fe₂O₃ film is checked for electrochemical supercapacitive performance in Na₂SO₃ solutions of various concentrations. Specific capacitance is calculated from cyclic voltammetry at numerous scan rates (5–200) mV s^?1. The highest obtained value of specific capacitance is 582 F g^?1 at 5 mV s^?1 for 0.5 M Na₂SO₃ electrolyte. The maximum values of specific power and specific energy are 6.9 and 53.4 Wh kg^?1 from the charge-discharge curve at the current density 2 mA cm^?2 in 0.5 M Na₂SO₃ electrolyte.     

Annealing temperature dependent catalytic water oxidation activity of iron oxyhydroxide thin films

Nanostructured iron oxyhydroxide(Fe OOH) thin films have been synthesized using an electrodeposition method on a nickel foam(NF) substrate and effect of air annealing temperature on the catalytic performance is studied. The as-deposited and annealed thin films were characterized by X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS), field emission scanning electron microscopy(FE-SEM) and linear sweep voltammetry(LSV) to determine their structural, morphological, compositional and electrochemical properties, respectively. The as-deposited nanostructured amorphous Fe OOH thin film is converted into a polycrystalline Fe_2O_3 with hematite crystal structure at a high temperature. The Fe OOH thin film acts as an efficient electrocatalyst for the oxygen evolution reaction(OER) in an alkaline 1 M KOH electrolyte. The film annealed at 200 °C shows high catalytic activity with an onset overpotential of 240 m V with a smaller Tafel slope of 48 m V/dec. Additionally, it needs an overpotential of 290 mV to the drive the current density of 10 m A/cm~2 and shows good stability in the 1 M KOH electrolyte solution.     

Effect of Li- and Ta-doping on the ferroelectric properties of Na0.5K0.5NbO3 thin films prepared by a chelate route

The effects of lithium and tantalum doping on the properties of Na_0.5K_0.5NbO₃ (NKN) thin films were investigated. The films were fabricated by an optimized chelate route which offers the advantage of a simple and rapid solution synthesis. The optimization was achieved by investigating the effects of alkaline volatilization loss on film properties. In this way, undoped NKN thin films fabricated by this conventional method exhibited good ferroelectric properties (P_r ~ 8 μC/cm², and E_c ~ 55 kV/cm for films annealed at 650 °C). The developed chelate route was then used to grow Li (5 %) and Ta (10 %) substituted thin films. Such structures allowed us to compare the effect of these dopant cations on phase formation, microstructure and ferroelectric properties. We show that both modifications produced a remarkable improvement on the ferroelectricity of the films. While the undoped material exhibited large leakage components in films annealed at 600 °C, films modified with Li or Ta presented well saturated ferroelectric hysteresis loops, indicating that those ions have a significant influence on the conducting process. The remnant polarizations of the Ta-doped films are greater than those of the Li-doped samples. This feature is however reversed for films annealed at low temperature (600 °C) due to the presence of a non-ferroelectric secondary phase in the Ta-doped composition.     

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO₂ substrate from a ZnO colloidal solution. Zinc peroxide (ZnO₂) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H₂O₂ solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV–Visible transmittance spectroscopy.     

The influence of film thickness and process temperature on <Emphasis Type="Italic">c</Emphasis>-axis orientation of Bi<Subscript>3</Subscript>TiTaO<Subscript>9</Subscript> thin films

Bi-layered ferroelectric Bi₃TiTaO₉ (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO₂/SiO₂/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (P _r ) than that of films annealed at 650 and 750°C. The P _r and coercive field (E _c ) values were measured to be 2 μC/cm² and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.     

Preparation and Characterization of Bismuth Doped TiO2 Thin Films

A series of Bismuth-doped titanium oxide (Bi-doped TiO₂) thin films on glass substrates have been prepared by sol-gel dip coating process. The prepared catalysts were characterized by XRD and XPS. The photocatlytic activity of the thin film catalysts was evaluated through the photodegradation of aqueous methyl orange under UV illumination. The experiments demonstrated that the Bi-doped TiO₂ prepared was anatase phase. The doped bismuth was in the 3⁺ oxidation state. The presence of Bi significantly enhanced the photocatalytic activity of TiO₂ films. At calcination temperature of 500°C, with doping concentration of 2 wt %, Bi-doped TiO₂ thin film showed the highest photocatalyic activity.     

Porous cobalt hydroxide film electrodeposited on nickel foam with excellent electrochemical capacitive behavior

A new porous cobalt hydroxide film has been successfully electrodeposited on nickel foam from 0.1?M cobalt nitrate electrolyte at ?1.0?V vs. SCE without adding any surfactant. The microstructure and surface morphology of prepared cobalt hydroxide films were physically characterized by X-ray diffraction analysis and scanning electron microscopy. The results indicate that an interlaced network structure was obtained. The effects of electrodeposition time, deposition potential, and different substrates on the specific capacitance and microstructure of prepared porous ??-Co(OH)₂ thin film were systematically studied. The results indicate that the film deposited on nickel foam at ?1.0?V has excellent electrochemical properties. A maximum specific capacitance of 1473?F?g^?1 could be achieved at a current density of 2?A?g^?1.     

Microstructure and optical properties of Ag-doped ZrO2 thin films prepared by sol gel method

Ag doped ZrO₂ thin films were deposited on quartz substrates by sol–gel dip coating technique. The effect of Ag doping on tetragonal to monoclinic phase transformation of ZrO₂ at a lower temperature (500 °C) was investigated by X-ray diffraction. It is found that the Ag doping promotes the phase transformation. The phase transformation can be attributed to the increase in the tetragonal grain size and concentration of oxygen vacancies in the presence of the Ag dopant. Accumulation of the Ag atoms at the film surface and surface morphology changes in the films were observed by AFM as a function of varying Ag concentration. X-ray photoelectron spectroscopy gave Ag 3d and O 1s spectra on Ag doped thin film. The chemical states of Ag have been identified as the monovalent state of Ag⁺ ions in ZrO₂. The Ag doped ZrO₂ thin films demonstrated the tailoring of band gap values. It is also found that the intensity of room temperature photoluminescence spectra is suppressed with Ag doping.     

Nanocrystalline nickel cobalt hydroxides/ultrastable Y zeolite composite for electrochemical capacitors

A novel nanocomposite of Co(OH)₂−Ni(OH)₂ and ultrastable Y molecular sieves was synthesized by an improved chemical precipitation method for electrochemical capacitors. The Co(OH)₂−Ni(OH)₂/ultrastable Y zeolite (USY) composite and its microstructure were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. Electrochemical characterization was performed by cyclic voltammetry and galvanostatic charge–discharge measurements. The results show that Co(OH)₂−Ni(OH)₂/USY microstructure applied for the electrochemical energy storage has displayed superior capacitive performance. The effect of heat treatment conditions on specific capacitance properties was also systemically explored. Upon annealing at 250 °C, the maximum specific capacitance was up to 479 F/g (or 1,710 F/g after correcting for the weight percent of Co(OH)₂−Ni(OH)₂ phase). Annealing temperatures higher than 250 °C may cause the hydroxide to form oxide phase and decrease the surface activity of the oxide, thereby leading to a decline of the specific capacitance.     

The effect of different substrate temperatures on the structure and luminescence properties of Y2O3:Bi3+ thin films

Y₂O₃:Bi³⁺ phosphor thin films were prepared by pulsed laser deposition in the presence of oxygen (O₂) gas. The microstructure and photoluminescence (PL) of these films were found to be highly dependent on the substrate temperature. X-ray diffraction analysis showed that the Y₂O₃:Bi³⁺ films transformed from amorphous to cubic and monoclinic phases when the substrate temperature was increased up to 600 °C. At the higher substrate temperature of 600 °C, the cubic phase became dominant. The crystallinity of the thin films, therefore, increased with increasing substrate temperatures. Surface morphology results obtained by atomic force microscopy showed a decrease in the surface roughness with an increase in substrate temperature. The increase in the PL intensities was attributed to the crystallinity improvement and surface roughness decrease. The main PL emission peak position of the thin films prepared at substrate temperatures of 450 °C and 600 °C showed a shift to shorter wavelengths of 460 and 480 nm respectively, if compared to the main PL peak position of the powder at 495 nm. The shift was attributed to a different Bi³⁺ ion environment in the monoclinic and cubic phases.     

Formation of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–TiO<Subscript>2</Subscript> bilayer using atomic layer deposition and its application to dynamic random access memory

To enhance film conformality together with electrical property suitable for dynamic random access memory (DRAM) capacitor dielectric, the effects of oxidant and post heat treatment were investigated on aluminum and titanium oxide (Al₂O₃–TiO₂) bilayer (ATO) thin film formed by atomic layer deposition method. For the conformal deposition of Al₂O₃ thin film, the O₃ oxidant required a higher deposition temperature, more than 450 °C, while H₂O or combined oxygen sources (H₂O+O₃) needed a wide range of deposition temperatures ranging from 250 to 450 °C. Conformal deposition of the TiO₂ thin film was achieved at around 325 °C regardless of the oxidants. The charge storage capacitance, measured from the ATO bilayer (4 nm Al₂O₃ and 2 nm TiO₂) deposited at 450 °C for Al₂O₃ and 325 °C for TiO₂ with O₃ oxidant on the phosphine-doped poly silicon trench, showed about 15% higher value than that of 5 nm Al₂O₃ single layer thin film without any increase of leakage current. To maintain the improved electrical property of the ATO bilayer for DRAM application, such as enhanced charge capacitance without increase of leakage current, upper electrode materials and post heat treatments after electrode formation must be selected carefully. Dedicated to Professor Su-Il Pyun on the occasion of his 65th birthday.     

X‐ray photoelectron spectroscopic chemical state quantification of mixed nickel metal,oxide and hydroxide systems

Quantitative chemical state X‐ray photoelectron spectroscopic analysis of mixed nickel metal, oxide, hydroxide and oxyhydroxide systems is challenging due to the complexity of the Ni 2p peak shapes resulting from multiplet splitting, shake‐up and plasmon loss structures. Quantification of mixed nickel chemical states and the qualitative determination of low concentrations of Ni(III) species are demonstrated via an approach based on standard spectra from quality reference samples (Ni, NiO, Ni(OH)₂, NiOOH), subtraction of these spectra, and data analysis that integrates information from the Ni 2p spectrum and the O 1s spectra. Quantification of a commercial nickel powder and a thin nickel oxide film grown at 1‐Torr O₂ and 300 °C for 20 min is demonstrated. The effect of uncertain relative sensitivity factors (e.g. Ni 2.67 ± 0.54) is discussed, as is the depth of measurement for thin film analysis based on calculated inelastic mean free paths. Copyright © 2009 John Wiley & Sons, Ltd.     

Hydrothermally synthesized Ni(OH)<Subscript>2</Subscript>@Zn(OH)<Subscript>2</Subscript> composite with enhanced electrochemical performance for supercapacitors

Two kinds of electrode materials Ni(OH)₂ and Ni(OH)₂@Zn(OH)₂ composite are fabricated on nickel foam. Electrochemical experiments indicate Ni(OH)₂@Zn(OH)₂ composite deserves further study due to high specific capacitance and good cycle stability, so that it can achieve energy storage and conversion as much as possible. When the hydrothermal time is different, the electrochemical performance of the sample is also different. Accurately, samples can obtain better electrochemical performance at 15 h, and the maximum specific capacitance of Ni(OH)₂@Zn(OH)₂ is 7.87 F cm^?2 compared to Ni(OH)₂ (0.61 F cm^?2) at 5 mA cm^?2. Even at 50 mA cm^?2, specific capacitance is 5.24 F cm^?2 and rate capability is 66.6%. Furthermore, Ni(OH)₂@Zn(OH)₂-15 h loses 19.8% after 1000 cycles, revealing the composite has an outstanding stable cycle. These properties also indicate Ni(OH)₂@Zn(OH)₂-15 h is a promising electrode material.     

Low temperature relaxation in polypyromellitimide

The effect of heat treatment at temperatures above 300°C on the low temperature relaxation of poly(4,4′-oxydiphenylenepyromellitimide) (Kapton H-film) was studied by wide-line nuclear magnetic resonance (NMR), mechanical, and dielectric measurements. In the NMR line spectrum of the as-received film, a narrow component above ?60°C and a broad component which begins to narrow at about ?100°C were observed. It is proposed that the narrow component is associated with absorbed water, because it disappeared in the heat-treated film at 300°C in N₂. On the other hand, the behavior of the broad component was not influenced by heating to 300°C in N₂. Mechanical and dielectric loss peaks were observed at ?75°C (11 Hz) and ?65°C (1 kHz), respectively, in the as-received film. These loss peaks did not change in intensity with heating to 300°C in N₂. It is proposed that the mechanical and dielectric loss peaks corresponding to the narrowing of the NMR broad component are associated with the local-mode motion of the diphenylether portion of the polypyromellitimide chain. It was found that crosslinks are formed by heating to 374°C in air through coupling of the diphenylether portions of the molecular chains. With the formation of crosslinks the dielectric loss peak shifted toward higher temperature and the intensity decreased through restriction of the local-mode motion of the diphenylether portion of the molecular chain.