添加La的Bi2Te3和Bi0.5Sb1.5Te3热电材料的电磁感应熔炼法制备及其热电性能

在N2气保护下,采用电磁感应法制备了添加La的Bi2Te3和Bi0.5Sb1.5Te3。运用X射线粉末衍射、电感耦合等离子光谱和扫描电子显微镜对材料的物相成分和形貌进行了表征。研究了La对Bi2Te3和Bi0.5Sb1.5Te3热电材料的电导率(σ)、Seebeck系数(S)和热导率(κ)的影响。实验结果表明,添加La明显降低了2种材料的热导率,提高了热电优值(ZT),添加La的Bi0.5Sb1.5Te3的热电优值在室温超过了1。     

Pressure-induced disordered substitution alloy in Sb2Te3

A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.     

电沉积Bi2Te3基薄膜的电化学阻抗谱研究

以不锈钢为基底,利用电化学沉积方法制备Bi2Te3基薄膜材料,并采用X射线衍射技术、电子探针微观分析等方法对薄膜进行结构和成分表征,通过电化学阻抗谱技术对不锈钢表面Bi2Te3的电化学沉积机理进行了初步探讨.结果表明Bi-Te和Bi-Te-Se体系具有相似的电化学沉积机理,即Bi3+和2HTeO+或H2SeO3首先被还原为Bi单质和Te或Se单质,然后Bi单质与Te或Se单质反应生成Bi2Te3基化合物,而Bi-Sb-Te体系中,2HTeO+首先被还原为Te单质,生成的Te再与Bi3+和Sb(III)反应生成Bi2Te3基化合物,三种体系的沉积都受电化学极化控制.     

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.     

CsMBi(3)Te(6) and CsM(2)Bi(3)Te(7) (M = Pb, Sn): new thermoelectric compounds with low-dimensional structures

The new materials CsPbBi(3)Te(6) and CsPb(2)Bi(3)Te(7) were discovered through reactions of CsBi(4)Te(6) with PbTe, whereas the isostructural materials CsSnBi(3)Te(6) and CsSn(2)Bi(3)Te(7) were discovered through corresponding reactions with SnTe. The compounds can also be prepared from stoichiometric mixtures of Cs(2)Te, Pb (Sn), Bi, and Te. The crystal structures show a layered architecture of NaCl-type slabs alternating with layers of Cs atoms. This group of compounds offers a new quaternary system, Cs-M-Bi-Te (M = Pb and Sn), available for thermoelectric investigations, including fine-tuning of compositions and doping.     

Synthesis and characterization of the "metallic salts" A5Pn4 (A = K, Rb, Cs and Pn = As, Sb, Bi) with isolated zigzag tetramers of Pn4(4-) and an extra delocalized electron

The isostructural title compounds were prepared by direct reactions of the corresponding elements, and their structures were determined from single-crystal X-ray diffraction data in the monoclinic space group C2/m, Z = 2 (K5As4, a = 11.592(2) A, b = 5.2114(5) A, c = 10.383(3) A, beta = 113.42(1) degrees; K5Sb4, a = 12.319(1) A, b = 5.4866(4) A, c = 11.258(1) A, beta = 112.27(7) degrees; Rb5Sb4, a = 12.7803(9) A, b = 5.7518(4) A, c = 11.6310(8) A, beta = 113.701(1) degrees; K5Bi4, a = 12.517(2) A, b = 5.541(1) A, c = 11.625(2) A, beta = 111.46(1) degrees; Rb5Bi4, a = 12.945(4) A, b = 5.7851(9) A, c = 12.018(5) A, beta = 112.78(3) degrees; Cs5Bi4, a = 12.887(3) A, b = 6.323(1) A, c = 12.636(1) A, beta = 122.94(2) degrees). The compounds contain isolated and flat zigzag tetramers of Pn4(4-) (Pnictide (Pn) = As, Sb, Bi) with a conjugated pi-electron system of delocalized electrons. All six compounds are metallic ("metallic salts") and show temperature-independent (Pauli-like) paramagnetism due to a delocalized electron from the extra alkali-metal cation in the formula. At low temperatures (around 9.5 K) and low magnetic fields the bismuthides become superconducting.     

Electron-rich rods as building blocks for Sb strips and Te sheets.

We analyze the bonding in a number of networks of heavy main group elements comprised of finite-length linear chains fused at right angles. Isolated linear chain building blocks may be understood easily by analogy with three-orbital four-electron "hypervalent" bonding picture in such molecules as I(3)(-) and XeF(2). After deriving the appropriate electron-counting rules for such linear units, we proceed in an aufbau to fuse these chains into simple (and not so simple) infinite networks. It is proposed that (a) infinite Sb(3) ribbons of vertex sharing squares are stable for an electron count of 20 electrons per three atoms (i.e., ); (b) sidewise fused Sb double ribbons are stable for an electron count of 38 electrons per six atoms (i.e., ); (c) Sb(4) strips cut from a square lattice are stable at the electron count of 24 electrons per four atoms (i.e., ); (d) Te(6) defect square sheets are stable at the electron count of 40 electrons per six atoms (i.e., ). The electronic structures of the solid-state compounds containing these networks, namely La(12)Mn(2)Sb(30), alpha-ZrSb(2), beta-ZrSb(2), Cs(3)Te(22), and Cs(4)Te(28), are elaborated. We propose preferred electron counts for two hypothetical Sb ribbons derived from the Sb(3) ribbon in La(12)Mn(2)Sb(30). A possibility of geometry distortion modulation by excess charge in lattices comprised of even-membered linear units is suggested.     

Bismuth telluride (Bi2Te3) nanowires: synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation

Nanowires composed of the thermoelectric material Bi2Te3 were synthesized on highly oriented pyrolytic graphite (HOPG) electrodes using the electrochemical step edge decoration (ESED) method. Nanowire synthesis was initiated by applying a voltage pulse of -0.75 V versus SCE for 5 ms to an HOPG electrode in an aqueous solution containing both Bi3+ and TeO22-, thereby producing nuclei at the step edges. Bi2Te3 was electrodeposited onto these nuclei using a cyclic electrodeposition-stripping scheme that involved the electrodeposition of bismuth-rich Bi2Te3 on a negative-going voltammetric scan (to -0.05 V) and the subsequent anodic stripping of excess bismuth from these nanowires during a positive-going scan (to +0.35 V). When this cycle was repeated 10-50 times, Bi2Te3 nanowires in the 100-300-nm-diameter range were obtained. These nanowires were narrowly dispersed in diameter (RSDdia = 10-20%), were more than 100 microm in length, and were organized into parallel arrays containing hundreds of wires. Smaller nanowires, with diameters down to 30 nm, were obtained by electrooxidizing 150-nm-diameter Bi2Te3 nanowires at +0.37 V under conditions of kinetic control. This oxidation process unexpectedly improved the uniformity of Bi2Te3 nanowires, and X-ray photoelectron spectroscopy (XPS) shows that these nanowires retain a Bi2Te3 core but also have a thin surface layer composed of Bi and Te oxides. The ability of Bi2Te3 nanowires to generate electrical power was assessed by transferring ensembles of these nanowires onto cyanoacrylate-coated glass surfaces and evaporating 4-point nickel contacts. A dimensionless figure of merit, ZT, ranging from 0 to 0.85 was measured for fresh samples that were less than 1 day old. XPS reveals that Bi2Te3 nanowires are oxidized within a week to Bi2O3 and TeO2. These oxides may interfere with the application by evaporation of electrical contacts to these nanowires.     

A new thermoelectric material: CsBi4Te6

The highly anisotropic material CsBi(4)Te(6) was prepared by the reaction of Cs/Bi(2)Te(3) around 600 degrees C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) A, b = 4.4025(1) A, c = 14.5118(3) A, beta = 101.480(1) degrees, V = 3250.75(11) A(3), and Z = 8. The final R values are R(1) = 0.0585 and wR(2) = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi(4)Te(6)] anionic layers and Cs(+) ions residing between the layers. The [Bi(4)Te(6)] layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) A. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CsBi(4)Te(6) can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. SbI(3) doping resulted in p-type behavior and a maximum power factor of 51.5 microW/cm.K(2) at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 microW/cm.K(2) at 151 K was obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi(4)Te(6) and comparisons to those of p-type.     

Valence compounds versus metals. Synthesis, characterization, and electronic structures of cubic Ae(4)Pn(3) phases in the systems Ae = Ca, Sr, Ba, Eu; Pn = As, Sb, Bi

The isostructural compounds Sr(4)Bi(3), Ba(4)Bi(3), and Ba(4)As( approximately )(2.60) were prepared by direct reactions of the corresponding elements and their structures determined from single-crystal X-ray diffraction data as anti-Th(3)P(4) type in the cubic space group I43d, Z = 4 (a = 10.101(1) A, 10.550(1) A, 9.973 (1) A, respectively). The two bismuth compounds are stoichiometric, and the arsenide refines as Ba(4)As(2.60(2)). Only unrelated phases are obtained for all binary combinations among the title components for either Ca or Sb. The magnetic susceptibility and resistivities of Ba(4)Bi(3) and Eu(4)Bi(3) show that they are good metallic conductors ( approximately 40 microomega.cm at 298 K), whereas Ba(4)As(2.60) exhibits rho(150) > 1000 microomega.cm. The electronic structures of Sr(4)Bi(3), Ba(4)Bi(3), and Ba(4)As(3) were calculated by TB-LMTO-ASA methods. Mixing of cation d states into somewhat disperse valence p bands on Bi results in empty bands at E(F) and metallic behavior, whereas the narrower valence band in the electron-deficient Ba(4)As(3) leads to vacancies in about 11% of the anion sites and a valence compound.     

Synthesis in ionic liquids: [Bi2Te2Br](AlCl4), a direct gap semiconductor with a cationic framework

The Lewis acidic ionic liquid EMIMBr-AlCl(3) (EMIM = 1-ethyl-3-methylimidazolium) allows a novel synthetic route to the semiconducting layered metal chalcogenides halide [Bi(2)Te(2)Br](AlCl(4)) and its Sb analogue. [Bi(2)Te(2)Br](AlCl(4)) is a direct band gap, strongly anisotropic semiconductor and consists of cationic infinite layers of [Bi(2)Te(2)Br](+) and [AlCl(4)](-) anions inserted between the layers.     

Estimations with hypovanadous salts

Summary It has been shown that Cu, Hg, Sb, Bi, Se, Te, Au, Pt and Pd precipitated from their compounds in elementary form and thus be determined gravimetrically by vanadium(II) sulphate solution.

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Zusammenfassung Cu, Hg, Sb, Bi, Se, Te, Au, Pt und Pd können mit Vanadium(II)-sulfatlösung aus ihren Verbindungen in elementarer Form gefällt und gravimetrisch bestimmt werden.

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Part II: Z. analyt. Chem.189, 406 (1962).     

Determination of As, Sb, Se, Te and Bi in milk by slurry sampling hydride generation atomic fluorescence spectrometry

A simple and fast analytical procedure has been developed for the determination of As, Sb, Se, Te and Bi in milk samples by hydride generation atomic fluorescence spectrometry (HG-AFS). Samples were treated with aqua regia for 10 min in an ultrasound water bath and pre-reduced with KBr for total Se and Te determination or with KI and ascorbic acid for total As and Sb, the determination of Bi being possible in all with or without pre-reduction. Slurries of samples, in the presence of antifoam A, were treated with NaBH₄ in HCl medium to obtain the corresponding hydrides, and AFS measurements were processed in front of external calibrations prepared and measured in the same way as samples. Results obtained by the developed procedure compare well with those found after microwave-assisted complete digestion of samples. The proposed method is simple and fast, and only 1 ml of milk is needed. The values obtained for detection limit are 2.5, 1.6, 3, 6 and 7 ng l⁻¹ for As, Sb, Se, Te and Bi respectively in the diluted samples, with average relative standard deviation values of 3.8, 3.1, 1.9, 6.4 and 1.2% for three independent analysis of a series of commercially available samples of different origin. Data found in Spanish market samples varied from 3.2±0.3 to 11.3±0.2 ng g⁻¹ As, from 3.1±0.2 to 11.6±0.4 ng g⁻¹ Sb, from 10.7±0.5 to 25.5±0.4 ng g⁻¹ Se, from 0.9±0.2 to 9.4±0.6 ng g⁻¹ Te and from 11.5±0.1 to 27.7±0.4 ng g⁻¹ Bi.     

Microwave-assisted synthesis of sulfide M2S3 (m = Bi, Sb) nanorods using an ionic liquid

Single-crystalline Bi(2)S(3) and Sb(2)S(3) nanorods have been successfully synthesized by the microwave-assisted ionic liquid method. The starting reagents were Bi(2)O(3) or Sb(2)O(3), HCl, Na(2)S(2)O(3), and ethylene glycol (EG) or ethanolamine, and the ionic liquid used was 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM][BF(4)]). Our experiments showed that the ionic liquid played an important role in the morphology of M(2)S(3) (M = Bi, Sb). Single-crystalline Bi(2)S(3) nanorods could be prepared in the presence of [BMIM][BF(4)]. However, urchinlike Bi(2)S(3) structures consisting of nanorods were formed without using [BMIM][BF(4)]. Single-crystalline Sb(2)S(3) nanorods were obtained in the presence of [BMIM][BF(4)]. However, single-crystalline Sb(2)S(3) nanosheets could be prepared in the absence of [BMIM][BF(4)]. The products were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED).     

Synthesis and structural investigation of a unique columnar phase in the Bi2O3–TeO2–V2O5 System

A new columnar phase Bi(11.65)Te(1.35)V(5)O(34-δ) (δ ～ 1.3) containing VO(4) tetrahedra has been identified for the first time in the Bi(2)O(3)-TeO(2)-V(2)O(5) system. The phase formation and the extent of substitution of Te(4+) for Bi(3+) ions in order to stabilize V(5+) in this composition have been confirmed by the single crystal analysis, combined with the powder X-ray diffraction of the solid state synthesized bulk crystalline samples. The oxide crystallizes in a monoclinic crystal system, space group P2/c, with unit cell parameters a = 11.4616(7) ?, b = 5.7131(3) ?, c = 23.5090(18) ?, β = 101.071° (6) (Z = 2). The structure retains the basic features of the columnar oxides with the presence of [Bi(10.65)Te(1.35)O(14)](n)(9.35n+) columns along the (010) direction, surrounded by (VO(4)) tetrahedra placed in the planes parallel to (100) and (001), with an isolated bismuth atom in between the columns. The composition with a limited Te(4+) substitution, Bi(11.65)Te(1.35)V(5)O(34-δ) (δ ～ 1.3), exists with a surprisingly high oxygen deficiency as compared to the stoichiometrically known columnar oxides such as Bi(13)Mo(4)VO(34), Bi(12)Te(1)Mo(3)V(2)O(34), and Bi(11)Te(2)Mo(2)V(3)O(34). The structure of this interesting member of the columnar family of oxides based on the single crystal X-ray diffraction and the Raman spectroscopic studies indicates the possibility of the distribution of the oxygen vacancies among the VO(4) tetrahedral units. Further confirmation for the formation of vanadium stabilized columnar structures has been provided by the successful preparation of Bi(11.65)Te(1.35)V(4)CrO(34-δ) (δ ～ 0.83) and Bi(11.65)Te(1.35)V(4)WO(34-δ) (δ ～ 0.83) phases. Preliminary investigation of the photocatalytic efficiencies of the oxides Bi(11.65)Te(1.35)V(5)O(34-δ), Bi(11.65)Te(1.35)V(4)CrO(34-δ), and Bi(11.65)Te(1.35)V(4)WO(34-δ) revealed moderate photocatalytic activities for the decomposition of the dyes such as Rhodamine B under UV-vis light irradiation.     

Diverse polyanions based on MnBi4 and MnSb4 tetrahedra: polymorphism, structure, and bonding in Ca21Mn4Bi18 and Ca21Mn4Sb18

New transition-metal-containing Zintl phases, Ca21Mn4Bi18 and Ca21Mn4Sb18, have been synthesized by high-temperature reactions, and their structures have been determined by single-crystal X-ray diffraction. Ca21Mn4Bi18 crystallizes in the monoclinic space group C2/c (No. 15, Z = 4) with a = 17.470(2) A, b = 17.392(2) A, c = 17.208(2) A, beta = 93.253(2) degrees (R1 = 0.0405, wR2 = 0.0840) and is isostructural with the recently reported Ca21Mn4Sb18. The compound with the same formula, which is also reported herein, is in turn a new polymorph of Ca21Mn4Sb18 and crystallizes in the monoclinic space group C2/m (No. 12, Z = 4) with a = 17.415(6) A, b = 16.567(6) A, c = 17.047(6) A, beta = 92.068(4) degrees (R1 = 0.0432, wR2 = 0.0788). This new polymorph of Ca21Mn4Sb18 is isostructural with another related compound, Sr21Mn4Sb18. Despite the similarity in their chemical formulas, the structures of Ca21Mn4Bi18 and Ca21Mn4Sb18 are very different: Ca21Mn4Bi18 contains unique [Mn4Bi10] cluster anions made up of four MnBi4 tetrahedra connected through edge-sharing. The structure of Ca21Mn4Sb18 features edge- and corner-shared MnSb4 tetrahedra, which make [Mn4Sb11] tetramers. The latter are linked to each other through external Sb-Sb bonds to form larger isolated [Mn8Sb22] polyanions. Electronic band structure calculations performed using the TB-LMTO-ASA method show a small band gap at the Fermi level, suggesting narrow-gap semiconducting behavior for both compounds.     

化学蒸气发生-四通道原子荧光光谱法同时测定高纯金中的痕量As,Sb,Bi,Te

采用化学蒸气发生-四通道原子荧光光谱法测定了高纯金中的痕量砷、锑、铋和碲。用乙酸乙脂萃取分离金,水相还原后采用化学蒸气发生-四通道原子荧光光谱法测定高纯金中的痕量砷、锑、铋和碲。在最佳条件下,方法对As,Sb,Bi,Te的检出限分别为0.04,0.05,0.04,0.03 ng/mL(3σ);测定精密度分别为0.98,0.89,0.94,0.99%(对10 ng/mL As,Sb,Bi和Te混合标准,n=7)。方法对实际样品中的As,Sb,Bi,Te进行了同时测定,测定结果与标准方法无明显差异,各元素的加标回收率为95%～105%。     

Organic-inorganic perovskites containing trivalent metal halide layers: the templating influence of the organic cation layer

Thin sheetlike crystals of the metal-deficient perovskites (H2AEQT)M2/3I4 [M = Bi or Sb; AEQT = 5,5"'-bis-(aminoethyl)-2,2':5',2':5',2'-quaterthiophene] were formed from slowly cooled ethylene glycol/2-butanol solutions containing the bismuth(III) or antimony(III) iodide and AEQT.2HI salts. Each structure was refined in a monoclinic (C2/m) subcell, with the lattice parameters a = 39.712(13) A, b = 5.976(2) A, c = 6.043(2) A, beta = 92.238(5) degrees, and Z = 2 for M = Bi and a = 39.439(7) A, b = 5.952(1) A, c = 6.031(1) A, beta = 92.245(3) degrees, and Z = 2 for M = Sb. The trivalent metal cations locally adopt a distorted octahedral coordination, with M-I bond lengths ranging from 3.046(1) to 3.218(3) A (3.114 A average) for M = Bi and 3.012(1) to 3.153(2) A (3.073 A average) for M = Sb. The new organic-inorganic hybrids are the first members of a metal-deficient perovskite family consisting of (Mn+)2/nV(n-2)/nX4(2-) sheets, where V represents a vacancy (generally left out of the formula) and the metal cation valence, n, is greater than 2. The organic layers in the AEQT-based organic-inorganic hybrids feature edge-to-face aromatic interactions among the rigid, rodlike quaterthiophene moieties, which may help to stabilize the unusual metal-deficient layered structures.     

Generation of the additional fluorescence radiation in the elastomeric shields used in computer tomography (CT)

Two commercially available (EP, Z) and eight new elastomeric composites (M1–M4, G1–G4, of thickness ≈1 mm) containing mixtures of differing proportions of heavy metal additives (Bi, W, Gd and Sb) have been synthesised and examined as protective shields. The intensity of the X-ray fluorescence radiation generated in the typical elastomeric shields for CT, containing Bi and other heavy metal additives influence on the practical shielding properties. A method for assessing the radiation shielding properties of elastomeric composites used in CT examination procedures via X-ray spectrometry has been proposed. To measure the radiation reduction ability of the protective shields, the dose reduction factor (DRF) has been determined. The lead equivalents for the examined composites were within the ranges of 0.046–0.128 and 0.048–0.130 mm for 122.1 and 136.5 keV photons, respectively. The proposed method, unlike to the common approach, includes a dose contribution from the induced X-ray fluorescence radiation of the heavy metal elements in the protective shields. The results clearly indicate that among the examined compositions, the highest values DRF have been achieved with preparations containing Bi+W, Bi+W+Gd and Bi+W+Sb mixtures with gradually decreasing content of heavy metal additives in the following order: Bi, W, Gd and Sb. The respective values of DRF obtained for the investigated composites were 21, 28 and 27 % dose reduction for a 1 mm thick shield and 39 and ~50 % for a 2 mm thick layer (M1–M4).     

Solvent Extraction Separation of Germanium(IV) with N-<Emphasis Type="Italic">n</Emphasis>-Octylaniline As an Extractant

The extraction behavior of germanium(IV) from aqueous hydrochloric acid solution with N-n-octylaniline in xylene was investigated. Hydrochloric acid concentration higher than 9 M remained effective for quantitative extraction of germanium(IV). Phenylfluorone ion as a counter anion was used. More than 2% N-n-octylaniline provided quantitative extraction at 1 min equilibrium time and germanium(IV) was back extracted by 7 M ammonia. The method was free from the interference of a large number of metal ions and anions, except for Te(IV) and Sn(IV); this was avoided using the masking effect. Germanium(IV) was separated from associated elements in its binary mixture with Si(IV), Te(IV), Sb(III), Bi(III), Au(III), Cu(II), Zn(II), and its ternary mixture with Se(IV), Te(IV); Sb(III), Bi(III); and Au(III), Cu(II). The proposed method was applied to a synthetic sample containing associated metal ions. The results indicated that trace amounts of germanium(IV) could be separated effectively from higher amounts of other elements.__________From Zhurnal Analiticheskoi Khimii, Vol. 60, No. 5, 2005, pp. 463–467.Original English Text Copyright © 2005 by Sargar, Anuse.This article was submitted by the authors in English.