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介绍了利用电子束蒸发技术在蓝宝石光纤端面上生长具有良好表面形貌和晶体结构的ZnO薄膜方法.不同测试温度(室温至773 K)条件下的透射光谱显示,蒸镀在蓝宝石光纤端面上的ZnO薄膜,其光学吸收边随温度升高而发生红移现象,且禁带宽度和热力学温度之间满足Eg(T)=340-491×10-4T的关系.这为今后进一步利用ZnO薄膜的禁带宽度检测相应的环境温度,研制以ZnO薄膜为敏感材料的新型宽量程光纤温度传感器打下了良好的基础.
关键词:
ZnO薄膜
蓝宝石光纤
光学吸收边
光纤温度传感器 相似文献
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采用反应射频磁控溅射方法,在Si (100) 基片上制备了具有高c轴择优取向的ZnO薄膜.利用 原子力显微镜、透射电子显微镜、X射线衍射分析、拉曼光谱等表征技术,研究了沉积温度 对ZnO薄膜的表面形貌、晶粒尺度、应力状态等结晶性能的影响;通过沉积温度对透射光谱 和光致荧光光谱的影响,探讨了ZnO薄膜的结晶特性与光学性能之间的关系.研究结果显示, 在室温至500℃的范围内,ZnO薄膜的晶粒尺寸随沉积温度的增加而增加,在沉积温度为500 ℃时达到最大;当沉积温度为750℃时,ZnO薄膜的晶粒尺度有所减小;在室温至750℃的范 围内,薄膜中ZnO晶粒与Si基体之间均存在着相对固定的外延关系;在沉积温度低于500℃时 ,制备的ZnO薄膜处于压应变状态,而750℃时沉积的薄膜表现为张应变状态.沉积温度的不 同导致ZnO薄膜的折射率、消光系数、光学禁带宽度以及光致荧光特性的变化,沉积温度对 紫外光致荧光特性起着决定性的作用.此外,探讨了影响薄膜近紫外光致荧光发射的可能因 素.
关键词:
ZnO薄膜
表面形貌
微观结构
光学常数 相似文献
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采用两步法制备Si基Ag/ZnO双层结构薄膜,研究了Ag覆盖层的厚度和生长温度T对ZnO近带边发光强度的影响.对于厚度为100 nm的ZnO薄膜,发现Ag覆盖层的最佳厚度仅为8 nm,此时双层薄膜相对于单层ZnO薄膜的发光增强因子η达到最大值8.1;同时还发现,在最佳Ag层厚度下,生长温度T≥300 ℃时生长Ag所获Ag/ZnO双层薄膜的ZnO发光强度比生长温度T≤200 ℃时生长的双层薄膜样品大一倍以上,η ≈ 18.结合对双层薄膜表
关键词:
表面等离子体共振
复合薄膜 相似文献
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用水热法在ZnO薄膜上制备了直径、密度及取向可控的ZnO纳米线阵列。ZnO薄膜是通过原子层沉积(ALD)方法制备并在不同温度下退火处理得到的,退火温度对ZnO薄膜的晶粒尺寸、结晶质量和缺陷性质有很大的影响。而ZnO薄膜的性质对随后生长的ZnO纳米线的直径、密度及取向能起到调节控制的作用。通过扫描电子显微镜(SEM)、X射线衍射(XRD)仪和光致发光(PL)测试对ZnO薄膜和ZnO纳米线进行了表征。最后得到的垂直取向的ZnO纳米线阵列适合在发光二极管和太阳能电池等领域使用。 相似文献
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本研究利用射频磁控溅镀法在玻璃基板上制备3 at.%的Cr掺杂ZnO薄膜,再以300℃~500℃温度退火处理25 mins,并探讨了退火温度对Al掺杂ZnO薄膜的微观结构与机械性能的影响.微观结构分析结果表明Cr掺杂ZnO薄膜的结晶方向为(002),且沿(002)方向的成长随退火温度升高而越加明显,但薄膜的表面却随退火温度升高而变得越来越粗糙.机械性能分析结果揭示晶粒尺寸随退火温度升高而增大,导致差排原子的动能随之降低,致使Cr掺杂ZnO薄膜的硬度随退火温度升高而增大,但对其对杨氏模量却没有太大的影响;此外,Cr掺杂ZnO薄膜的耐磨性与韧性均随退火温度升高而增强,表明退火处理对该薄膜的抗塑性形变能力有很大帮助. 相似文献
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研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响. XRD和SEM的研究结果表明,衬底温度对ZnO薄膜的微观结构有显著影响,明显的形貌转变温度大约发生在175℃,低于175℃,薄膜呈镜面结构,晶粒为球状,高于177℃的较高温度范围,薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织;随着温度增加,薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96 cm2/V·s的高迁移率和3.28×10-2 Ω·cm的低电阻率,对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极.
关键词:
MOCVD
ZnO薄膜
透明导电氧化物
太阳电池 相似文献
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磁控溅射制备ZnO薄膜的受激发射特性的研究 总被引:2,自引:0,他引:2
用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。 相似文献
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Zinc oxide thin films have been deposited on glass substrates at a substrate temperature of 673 K by spray pyrolysis. The
samples are annealed in ambient atmosphere at various temperatures. The effect of annealing on structural, electrical, and
optical properties of ZnO films has been investigated. X-ray diffraction patterns show that crystallinity of the ZnO films
has been improved after annealing. The morphology of ZnO thin films is studied by atomic force microscopy. The tensile strain
(compressive stress) is found to decrease with increase in annealing temperature which indicates the relaxation of tensile
strain in ZnO thin films. A decrease in energy band gap is observed with increase of annealing temperature. The mechanism
of blue-green luminescence of ZnO thin film has been analyzed. The resistivity is found to decrease with annealing temperature. 相似文献
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ZnO thin films have been grown on a-plane (1,1,−2,0) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at low substrate temperature of 350 °C. It is showed that the crystal and electrical quality of the thin films was improved by using a ZnO buffer layer. The photoluminescence (PL) measurements indicate that the ZnO thin films grown at such a low substrate temperature have a strong UV emission. 相似文献
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The microstructural characterization of Ga-doped (5 at.%) ZnO thin film was conducted by a transmission electron microscopy study. The atomic arrangement of Ga-doped ZnO having an wurtzite structure was identified by the experimental HRTEM and Fourier filtered images as well as the electron diffractions. As a result, we have revealed that the orientation and defect density of Ga-doped ZnO thin films were greatly influenced by the deposition temperature, resulting in the variation of electrical property. In other words, the tendency forming a c-axis oriented texture grows up and the defects such as dislocations and stacking faults decrease, as the temperature of sputtering deposition increases. Consequently, the electrical properties of Ga-doped ZnO thin films can be controlled by the deposition temperature directly related with the defect density. 相似文献
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L.P. Peng L. Fang X.F. Yang H.B. Ruan Y.J. Li Q.L. Huang C.Y. Kong 《Physica E: Low-dimensional Systems and Nanostructures》2009,41(10):1819-1823
In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10−3 Ω cm. 相似文献
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《Physica E: Low-dimensional Systems and Nanostructures》2010,42(10):1819-1823
In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10−3 Ω cm. 相似文献
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In this paper, the experimental results regarding some structural, electrical and optical properties of ZnO thin films prepared by thermal oxidation of metallic Zn thin films are presented.Zn thin films (d=200–400 nm) were deposited by thermal evaporation under vacuum, onto unheated glass substrates, using the quasi-closed volume technique. In order to obtain ZnO films, zinc-coated glass substrates were isochronally heated in air in the 300–660 K temperature range, for thermal oxidation.X-ray diffraction (XRD) studies revealed that the ZnO films obtained present a randomly oriented hexagonal nanocrystalline structure. Depending on the heating temperature of the Zn films, the optical transmittance of the ZnO films in the visible wavelength range varied from 85% to 95%. The optical band gap of the ZnO films was found to be about 3.2 eV. By in situ studying of the temperature dependence of the electrical conductivity during the oxidation process, the value of about 2×10−2 Ω−1 m−1 was found for the conductivity of completely oxidized ZnO films. 相似文献
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P. A. Mini Alex Sherine K. T. Shalumon Avinash Balakrishnan S. V. Nair K. R. V. Subramanian 《Applied Physics A: Materials Science & Processing》2012,107(2):393-400
We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni2+ ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves
show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction
and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the
low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed
conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are
discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism
of these films. 相似文献
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纳米ZnO薄膜可见发射机制研究 总被引:12,自引:5,他引:7
利用溶胶-凝胶法 (Sol-Gel)制备了纳米ZnO薄膜,获得了高强的近紫外发射室温下测量了样品的光致发光谱(PL )、吸收谱(ABS)、X射线衍射谱(XRD).X射线衍射(XRD)的结果表明:纳米ZnO薄膜呈多晶态,具有六角纤锌矿结构和良好的C轴取向;发现随退火温度升高,(002)衍射峰强度显著增强,衍射峰的半高宽(FWHM)减小、纳米颗粒的粒径增大.由吸收谱(ABS)给出了样品室温下带隙宽度为3.30 eV.在PL谱中观察到二个荧光发射带,一个是中心波长位于392 nm附近强而尖的紫带,另一个是519 nm附近弱而宽的绿带研究了不同退火温度样品的光致发光峰值强度的变化关系,发现随退火温度升高,紫带峰值强度增强、绿带峰值强度减弱,均近似呈线性变化.证实了纳米ZnO薄膜绿光发射主要来自氧空位(Vo)形成的浅施主能级与锌空位(VZn)形成的浅受主能级之间的复合,或氧空位(Vo)形成的深施主能级上的电子至价带顶的跃迁;紫带来自于导带中的电子与价带中的空位形成的激子复合. 相似文献
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Ga doped ZnO (GZO) thin films were deposited on glass substrates at room temperature by continuous composition spread (CCS) method. CCS is thin films growth method of various GaxZn1−xO(GZO) thin film compositions on a substrate, and evaluating critical properties as a function position, which is directly related to material composition. Various compositions of Ga doped ZnO deposited at room temperature were explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 1.46 × 10−3 Ω cm and an average transmittance above 90% in the 550 nm wavelength region were able to be formed at an Ar pressure of 2.66 Pa and a room temperature. Also, optimized composition of the GZO thin film which had the lowest resistivity and high transmittance was found at 0.8 wt.% Ga2O3 doped in ZnO. 相似文献
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Bao Y. Man Hong Z. Xi Chuan S. Chen Mei Liu Jing Wei 《Central European Journal of Physics》2008,6(3):643-647
Using a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been
deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences
of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films
were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C
and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated
at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N2. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position
of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5
cm from the target surface for optics with a focal length of 70 cm.
相似文献