纳米结构Bi2Te3化合物的低温湿化学合成

通过对溶液pH值和颜色以及粉末结构的原位分析, 研究了低温湿化学Bi₂Te₃纳米粉末合成过程中的化学和物理反应机制. 结果表明, 碱性添加剂对合成Bi₂Te₃是必要的. 采用65 ℃低温湿化学合成方法, 在添加乙二胺四乙酸二钠(EDTA)的情况下, 制备了Bi₂Te₃纳米囊. 高分辨电镜观察表明, 这种内空管状结构纳米囊的壁厚约为6 nm.     

n型Bi2Te3-ySey温差电材料薄膜的电化学制备及表征

采用电化学控电位的方法在不锈钢基片上电沉积制备了Bi₂Te_3-ySe_y温差电材料薄膜。研究了电沉积溶液中硒含量与薄膜中硒含量的关系，考察了不同沉积电位对电沉积Bi₂Te_3-ySe_y薄膜的温差电性能的影响，并采用ESEM、EDS、XRD等方法对电沉积薄膜的形貌、成分及结构进行了分析。结果表明，在含有Bi³⁺、HTeO₂⁺和Se⁴⁺的电沉积溶液中，采用电化学沉积的方法，可实现铋、碲、硒三元共沉积，生成Bi₂Te_3-ySe_y半导体化合物。改变电沉积溶液组成，可控制Bi₂Te_3-ySe_y化合物中硒的掺杂浓度。-0.04 V沉积电位下制备的Bi₂Te_3-ySe_y薄膜较平整、致密，组成为Bi₂Te_2.7Se_0.3。退火处理可提高电沉积Bi₂Te_3-ySe_y薄膜的塞贝克系数，且控制沉积电位为-0.04 V下制备的Bi₂Te_3-ySe_y薄膜退火后的塞贝克系数为-123 μV·K^-1。     

Bi2S3量子点敏化TiO2纳米阵列结构的制备及光电性能研究

利用水热法制备一维TiO₂纳米棒阵列,并采用化学浴沉积法(CBD)结合自组装技术在TiO₂纳米棒上敏化Bi₂S₃量子点,形成TiO₂/Bi₂S₃复合纳米棒阵列.系统研究了复合结构的表面形貌、晶体结构、光学及光电性能.结果表明:在修饰有三氨丙基三乙氧基硅烷自组装单分子膜(APTS-SAMs)的TiO₂纳米棒表面形成一层致密的Bi₂S₃量子点敏化层,这一技术的关键是含-NH₂末端的APTS-SAMs可有效促进Bi₂S₃的异相成核作用;Bi₂S₃的沉积时间对复合结构的光吸收及光电响应性能有决定性的影响,薄膜的光电流随着沉积时间呈先增加后减小的趋势,在沉积时间为20 min时,光电流密度最大.这是因为随着沉积时间的增加,TiO₂纳米棒表面Bi₂S₃量子点密度增大,光吸收增加;而当沉积时间进一步延长时,Bi₂S₃在TiO₂纳米棒表面的大量负载而形成堆积和团聚,导致表面缺陷增多,光生电子复合几率增大,从而使光电流密度减小.     

四角星形BiVO4/Bi2O3催化剂的制备及性能研究

采用水热法合成具有四角星形貌的钒酸铋,再将钒酸铋浸渍在碱溶液里二次水热,制备出BiVO₄/Bi₂O₃催化剂。采用X射线粉末衍射(XRD)、扫描电子显微镜(SEM),紫外-射(UV-Vis DRS)等方法征。可见光下,BiVO₄/Bi₂O₃复合物的光催化降解丹明B性能及光电优于纯BiVO₄。BiVO₄/Bi₂O₃复合材料形成了异质结构,有效抑制了光电子与空穴的复合效率。     

Bi2MoO6/BiVO4异质结的水热合成和可见光催化活性

采用一步水热法制备Bi₂MoO₆/BiVO₄复合光催化剂. 利用X 射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、高分辨透射电子显微镜(HRTEM)等手段对其晶体结构和微观结构进行了表征. 结果表明, Bi₂MoO₆纳米粒子沉积在BiVO₄纳米片表面从而形成异质结结构. 紫外-可见漫反射光谱(UV-Vis DRS)表明所制备的Bi₂MoO₆/BiVO₄异质结较纯相Bi₂MoO₆和BiVO₄对可见光吸收更强. 由于形成异质结结构及其光吸收性能使Bi₂MoO₆/BiVO₄ 光催化活性有较大提高. 可见光下(λ>420 nm)光催化降解罗丹明B (RhB)实验结果表明,Bi₂MoO₆/BiVO₄光催化活性较纯相Bi₂MoO₆和BiVO₄高. Bi₂MoO₆/BiVO₄样品光催化性能提高的原因是Bi₂MoO₆和BiVO₄形成异质结, 从而有效抑制光生电子-空穴对的复合, 增大了可见光吸收范围及比表面积.     

Bi2S3量子点敏化TiO2纳米阵列结构的制备及光电性能

利用水热法制备一维TiO₂纳米棒阵列,并采用化学浴沉积法(CBD)结合自组装技术在TiO₂纳米棒上敏化Bi₂S₃量子点,形成TiO₂/Bi₂S₃复合纳米棒阵列。系统研究了复合结构的表面形貌、晶体结构、光学及光电性能。结果表明:在修饰有三氨丙基三乙氧基硅烷自组装单分子膜(APTS-SAMs)的TiO₂纳米棒表面形成一层致密的Bi₂S₃量子点敏化层,这一技术的关键是含-NH₂末端的APTS-SAMs可有效促进Bi₂S₃的异相成核作用;Bi₂S₃的沉积时间对复合结构的光吸收及光电响应性能有决定性的影响,薄膜的光电流随着沉积时间呈先增加后减小的趋势,在沉积时间为20min时,光电流密度最大。这是因为随着沉积时间的增加,TiO₂纳米棒表面Bi₂S₃量子点密度增大,光吸收增加;而当沉积时间进一步延长时,Bi₂S₃在TiO₂纳米棒表面的大量负载而形成堆积和团聚,导致表面缺陷增多,光生电子复合几率增大,从而使光电流密度减小。     

α-Bi2Mo3O12和γ-Bi2MoO6的水热合成及可见光催化性能

采用水热法经调控n_Bi/n_Mo比和pH值,制备了α-Bi₂Mo₃O₁₂钠米板和γ-Bi₂MoO₆纳米片2种钼酸铋材料。结果表明：在低pH值和较高的钼浓度下可合成α-Bi₂Mo₃O₁₂,高pH值和低的钼浓度导致了γ-Bi₂MoO_6<     

Ag/Ag2MoO4/Bi2MoO6复合光催化剂的制备及其光催化性能

采用水热、化学沉积和原位光还原的方法成功制备了新型Ag/Ag₂MoO₄/Bi₂MoO₆三元复合光催化剂。通过X射线粉末衍射（XRD）、扫描电子显微镜（SEM）、X射线光电子能谱（XPS）和紫外可见漫反射光谱（UV-Vis DRS）等技术对材料的组成、形貌、光吸收特性和光电化学性能等进行系统分析。以四环素为目标污染物,研究Ag/Ag₂MoO₄/Bi₂MoO₆在可见光下的光催化性能。研究结果表明,相比于纯Ag₂MoO₄和Bi₂MoO₆,Ag的表面等离子体共振（SPR）效应显著拓宽了催化体系对可见光的吸收能力及响应范围。当Ag₂MoO₄理论负载量（质量分数）为24.6%时,Ag/Ag₂MoO₄/Bi₂MoO₆复合材料在20 min内可将四环素完全降解,且5次循环使用后仍保持较高的催化活性,表现出良好的循环稳定性。     

Fe3+掺杂三维分级纳米Bi2WO6的合成及其光催化活性增强机理

利用水热法合成了Fe³⁺掺杂的三维分级纳米Bi₂WO₆,借助X射线衍射（XRD）、场发射扫描电镜（FE-SEM）、透射电镜（HRTEM）、能谱（EDS）、紫外可见漫反射（UV-Vis-DRS）等测试手段对所得样品的相组成、形貌和谱学特征进行了表征。选择罗丹明B为模型污染物研究所得样品在可见光下的催化活性。结果表明,Fe³⁺掺杂Bi₂WO₆为新颖的分级纳米结构,且Fe³⁺掺杂能有效提高Bi₂WO₆的光催化活性,Fe³⁺掺杂量对Bi₂WO₆活性的影响显著;实验结果还表明,所得Fe³⁺掺杂Bi₂WO₆催化剂的稳定性较好,易于回收。此外,还对Fe³⁺掺杂Bi₂WO₆的光催化活性增强机理进行了研究,缺电子的Fe³⁺作为电子捕获中心有利于促进光生电子-空穴对的分离,从而提高Bi₂WO₆的光催化活性。     

Bi2Fe4O9/g-C3N4/UiO-66三元复合材料的协同光催化作用

通过水热法合成具有协同机制的三元复合材料Bi₂Fe₄O₉/g-C₃N₄/UiO-66,研究表明三元复合光催化剂的催化活性要高于二元材料和纯材料。这主要是由于Bi₂Fe₄O₉更易于和g-C₃N₄结合形成稳定的Z-scheme异质结结构,使三元复合材料增强了可见光响应能力,提高了电子-空穴分离能力,增强了空穴和电子的氧化还原能力。     

Nanostructured Bi2Te3 synthesized by low temperature aqueous chemical route

Chemical and physical reactions during the low temperature aqueous chemical synthesis of nanostructured Bi₂Te₃ powders were investigated in-situ by pH measurement, color observation of the solution and X-ray diffraction analysis of the powders. It was found that Bi₂Te₃ could be synthesized only in a strong alkaline solution. Bi₂Te₃ nanocapsules were synthesized by the aqueous chemical route at 65 °C with the addition of disodium ethylenediaminetetraacetate salt. High-resolution transmission electron microscopy observation indicates that the nanocapsules are hollow-structured with a wall thickness of about 6 nm. __________ Translated from CHIMICA SINICA, 2005, 63(16)(in Chinese)     

SnSbBiTe4-2Bi2Te3 join of the SnTe-Bi2Te3-Sb2Te3 quasi-ternary system

This is the first study of the SnSbBiTe₄-2Bi₂Te₃ join of the SnTe-Bi₂Te₃-Sb₂Te₃ quasi-ternary system by the methods of complex physicochemical analysis over a wide range of concentrations. A phase diagram was constructed for the title quasi-binary join. The system was found to be of the eutectic type; the eutectic coordinates are 65 mol % Bi₂Te₃ and 675 K. The starting components were shown to form solid solutions with extents of 20 mol %. Alloys with compositions lying within the Bi₂Te₃-based solid solution region were found to be n-type semiconductors.     

Bi2Te3-Te nanocomposite formed by epitaxial growth of Bi2Te3 sheets on Te rod

Single-crystal Bi₂Te₃-Te nanocomposites with heterostructure were synthesized using a two-step solvothermal process in the presence of ethylenediaminetetraacetic acid disodium salt. The first step is the formation of the Te nanorods and the second step is to grow the Bi₂Te₃ sheets off the Te rods surface to form the Bi₂Te₃-Te nanocomposites. The products were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. We demonstrate a method of an epitaxial growth of Bi₂Te₃ nanosheets perpendicular to the axis of the central Te rod and a formation process of Bi₂Te₃-Te nanocomposites is also proposed.     

Template synthesis of heterostructured polyaniline/Bi2Te3 nanowires

Heterostructured polyaniline/Bi₂Te₃ nanowires have been prepared by chemical and electrochemical reactions on a porous alumina template. Its morphology and structure have been studied by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron probe microanalysis. The microscope analysis reveals that Bi₂Te₃ is well enveloped in polyaniline tubules in pores of alumina template. This microscopic material shows possible application in microthermoelectric device.     

Bi2O3 /Al2O3纳米复合物的声化学合成及其对大肠杆菌和金黄色葡萄球菌的抑制作用

以偏铝酸钠和硝酸铋为原料在超声辐照下反应,一步法合成了Bi2O3-Al2O3纳米复合物。用电感耦合等离子体发射光谱(ICP),元素分析和热重分析确定了产物的组成,并通过傅立叶变换红外光谱(FTIR)、粉末X射线衍射(XRD)和透射电子显微镜(TEM)等测试手段对所得产物进行了表征。结果表明,产物为近似球状晶体,在超声40 min条件下粒径平均为24 nm。探讨了pH值和干燥温度以及超声时间对所得产物成分和粒径的影响。这类物质原本是一种治疗消化性溃疡和神经性消化不良的药物。实验发现,其中两种复合物对大肠杆菌和金黄色葡萄球菌具有明显的抑制作用。     

Synchrotron-radiation photoemission study of the V–VI layered compounds Bi2Te3, Bi2Se3, Sb2 Te3 and Sb2Te2Se

The valence band (VB) density of states and the binding energies of the weakly bound core levels have been measured by XUV photoelectron spectroscopy using synchrotron radiation for four V–VI layered compounds. Chemical shifts of the core levels are determined which support the partial ionicity of the bonds involved. The chemical shifts of the emission from two unequivalent crystal sites were shown to differ by less than 30 meV for the compounds Bi₂Te₃, Bi₂Se₃ and Sb₂Te₃.VB and core-level photoemission spectra for the V–VI compounds Bi₂Te₃, Bi₂Se₃, Sb₂Te₃ and Se₂Te₂Se have been presented. Chemical shifts of the Te 4d, Bi 5d, Sb 4d and Se 3d levels were determined, indicating partial ionicity of the mainly covalent bonds involved. Chemical-shift differences originating from atoms at two different crystal sites are <30 meV. In a simple model this implies that similar charge transfers do occur even though completely different bond orbitals were proposed for the and the AB⁽²⁾ bonds. Finally, the fact that no surface core-level shifts were observed tends to confirm the very weak influence of the van der Waals-like bonds on the B⁽²⁾ atoms.     

Thermoelectric properties of Cu-doped n-type (Bi2Te3)0.9–(Bi2−xCuxSe3)0.1(x=0–0.2) alloys

n-Type (Bi₂Te₃)_0.9–(Bi_2−xCu_xSe₃)_0.1 (x=0–0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu_2.86Te₂ precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x0.1) can reduce the lattice thermal conductivity (κ_L), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x=0.1 at 417 K, which is obviously higher than those of Cu-free Bi₂Se_0.3Te_2.7 (ZT=0.66) and Ag-doped alloys (ZT=0.86) prepared by the same technologies.     

Two-step synthesis of Bi2Te3-Te nanoarrays with sheet-rod multiple heterostructure

Bi₂Te₃-Te arrays with sheet-rod multiple heterostructure were obtained in large scale, using Te nanorod arrays as the in-situ templates under solvothermal process. The array is formed by the ordered Bi₂Te₃-Te rods where Bi₂Te₃ sheets distribute from the top face to the bottom face along the Te rod vertically. The microstructure of the heterostructure was studied through X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The electrical conductivity and Seebeck coefficient of the arrays were also studied. The course of reaction was monitored so as to propose a possible growth mechanism of such novel heterostructure. The key for the preparation of such heterostructure is to balance the velocity between the dissolution of Te rods and the formation of Bi₂Te₃ sheets. This synthetic approach could be promising to prepare self-assembled low-dimensional nanoarrays of metals and semiconductors with high yield.     

Thermoelectric properties of Ag-doped n-type (Bi2Te3)0.9-(Bi2−xAgxSe3)0.1 (x=0-0.4) alloys prepared by spark plasma sintering

Ag-doped n-type (Bi₂Te₃)_0.9-(Bi_2−xAg_xSe₃)_0.1 (x=0-0.4) alloys were prepared by spark plasma sintering and their physical properties evaluated. When at low Ag content (x=0.05), the temperature dependence of the lattice thermal conductivity follows the trend of (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1; while at higher Ag content, a relatively rapid reduction above 400 K can be observed due possibly to the enhancement of scattering of phonons by the increased defects. The Seebeck coefficient increases with Ag content, with some loss of electrical conductivity, but the maximum dimensionless figure of merit ZT can be obtained to be 0.86 for the alloy with x=0.4 at 505 K, about 0.2 higher than that of the alloy (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1 without Ag-doping.     

Transition Metal Substitutions Induce Ferromagnetism in Bi2Te3

The possibilities of magnetism induced by transition-metal atoms substitution in Bi₂Te₃ system are investigated by ab initio calculations. The calculated results indicate that a transition-metal atom substitution for a Bi atom produces magnetic moments, which are due to the spin-polarization of transition-metal 3d electrons. The values of magnetic moments are 0.92, 1.97, 2.97, 4.04, and 4.98 μ_B for 4% Ti-, V-, Cr-, Mn-, and Fe-doped Bi₂Te₃ respectively. When substituting two transition-metal atoms, the characteristics of exchanging couple depend upon the distributions of the Bi atoms substituted. When two transitionmetal atoms substituting for Bi atoms locate at the sites of Bi1 and Bi5, with the distance of 11.52 Å, the Bi_1.84TM_0.16Te₃ system is energetically most stable and exhibits ferromagnetic coupling.