Electron tunneling in the GaAs/AlAs(111) structures with a smooth potential at heteroboundaries

The effect of smooth interface potential on the electron tunneling in the GaAs/AlAs(111) structures with thin layers is studied using the pseudopotential method. The transition region between the structure components is represented by a half-period of the hexagonal (GaAs) ₃(AlAs)₃ (111) superlattice. It is shown that the allowance for the smooth potential results in a decrease in the Γ-L-mixing, Fano-resonance narrowing, and disappearance of interface states at the GaAs/AlAs(111) interface as compared to the abrupt-interface model. The shifts of the lowest Γ-and L-resonances observed for the structures with the layer thickness <2 nm amount to ∼0.1 eV, which is in good agreement with the behavior of levels in quantum wells. The transmission coefficient of electrons with the energies 0–0.5 eV above the GaAs conduction-band bottom obtained by multivalley calculation is close to that calculated with allowance for the lowest conduction band states Γ ₁ ⁽¹⁾ and Γ ₁ ⁽²⁾ of superlattice and Γ ₁ and L ₁ of binary crystals. This indicates that a two-valley superlattice model of the smooth GaAs/AlAs(111) interface can be developed. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 7–13, July, 2007.     

Intervalley electron scattering by phonons in (AlAs)1(GaAs)3(001) superlattices

Intervalley electron scattering by phonons in (AlAs)₁(GaAs)₃(001) superlattices is studied using the pseudopotential method and a phenomenological model of the bonding forces. The deformation potentials between the conduction band extrema of the superlattice involving short-and long-wavelength phonons are calculated. It is shown that the mixing of states from the zinc-blende L valleys plays a greater role in intervalley scattering in a superlattice than the Γ-X mixing. In particular, due to L-L mixing, the Γ-X ₃ transitions, analogous to Γ-L transitions in zinc blende, have higher intensities than the analogues of Γ-X transitions (Γ₁-M ₅ and (Γ₁-Γ₃ transitions). The deformation potentials averaged over the scattering channels in the superlattice agree with the corresponding potentials in a solid solution, but all transitions in the superlattice have higher intensities for the lower states.     

Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals

We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s _3/2(Γ₈) → 2s _3/2(Γ₈) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0 × 10⁸ cm⁻³) and in a doped p-InP crystal (p=3.6×10¹⁷ cm⁻³). Moreover, a new line, associated with the transition 1s _3/2(Γ ₈) → 2p _3/2(Γ₈) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in the residual-frequency band in the p-InP spectrum between TO(Γ) and LO (Γ) phonons. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 334–339 (10 March 1998)     

Electronic structure of a superconducting Bi2212 crystal by angle resolved ultra violet photoemission

The electronic structure of a high quality superconducting Bi₂Sr₂CaCu₂O_8+δ (Bi2212) single crystal is studied by angle resolved ultra violet photoemission (ARUPS) using He I (21.2 eV). Our results appear to show two bands crossing the Fermi level in ΓX direction of the Brillouin zone as reported by Takahashiet al. The bands at higher binding energy do not show any appreciable dispersion. The nature of the states near the Fermi level is discussed and the observed band structure is compared with the band structure calculations.     

Spontaneous-emission spectrum in a cavity: Doublet or triplet?

Summary The Green’s functions formalism together with the new algorithm in operating with ζ-functions has been used to obtain the three-peaked spectrum of spontaneous emission of an atom in a weakly damped cavity. The single-peaked spectrum and exponential decay law with the short (τ_s ~ 1/Γ _c) and long (τ₁ ~Γ _c/g ²) decay times have been shown to exist in the strongly damped cavity with its passive linewidthΓ _c.     

Electronic properties of orthorhombic LiGaS<Subscript>2</Subscript> and LiGaSe<Subscript>2</Subscript>

We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS₂ (LGS) and LiGaSe₂ (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) method within a framework of density functional theory. Our calculations show that these crystals have similar band structures. The valence band maximum (VBM) and the conduction band minimum (CBM) are located at Γ, resulting in a direct energy band gap. The VBM is dominated by S/Se-p and Li-p states, while the CBM is dominated by Ga-s, S/Se-p and small contributions of Li-p and Ga-p. From the partial density of states we find that Li-p hybridizes with Li-s below the Fermi energy (E _F), while Li-s/p hybridizes with Ga-p below and above E _F. Also, we note that S/Se-p hybridizes with Ga-s below and above E _F.     

High-spin states of rotational bands built upon νi13/2 in 166Lu

High-Spin states of odd-odd ¹⁶⁶Lu were populated using the ¹³⁹La(³⁰Si,3nγ)¹⁶⁶Lu at a beam energy of 120 MeV. Twelve new γ-rays were placed on top of the previously known two rotational bands built upon πg _7/2⊗νi _13/2 and πh _11/2⊗νi _13/2. Extending high-spin states up to 21⁺ and 25⁻ for each band, we have observed the onset of band crossing near ħω _c ≈ 0.35 MeV. The band crossing frequency of the yrast πh _11/2⊗νi _13/2 band is consistent with the neutron BC band crossing observed in lighter odd-odd Lu isotopes.     

A study of 223Ra populated by α-decay

The low spin states of ²²³Ra have been populated via α-decay from ²²⁷Th which was itself produced following β⁻ decay of an ²²⁷Ac source. α–γ and α−e _K,L,M angular correlation measurements have been analysed using the correct ground state spins of ²²⁷Th(=1/2⁺) and ²²³Ra(=3/2⁺) for the first time. The analysis has allowed unique J^π values to be assigned to almost all levels below 400 keV excitation in ²²³Ra. Values of (g _K−g _R)/Q ₀ have been deduced for several members of the K= 3/2^± bands (for the first time in an odd N nucleus in this mass region) allowing estimates of g _K and g _R to be extracted. The values of g _K and g _R are not significantly different for the positive and negative parity band members and tend to support other strong evidence that stable octupole deformation exists in ²²³Ra at low excitation energies. Received: 17 November 1997 / Revised version: 8 January 1998     

Electronic structure of half-metallic ferromagnet Co<Subscript>2</Subscript>MnSi at high-pressure

In this study, first principles calculation results of the half-metallic ferromagnetic Heusler compound Co₂MnSi are presented. All calculations are based on the spin-polarized generalized gradient approximation (σ-GGA) of the density functional theory and ultrasoft pseudopotentials with plane wave basis. Electronic structure of related compound in cubic L2₁ structure is investigated up to 95 GPa uniform hydrostatic pressure. The half-metal to metal transition was observed around ~70 GPa together with downward shift of the conduction band minimum (CBM) and a linear increase of direct band gap of minority spins at Γ-point with increasing pressure. The electronic density of states of minority spins at Fermi level, which are mainly due to the cobalt atoms, become remarkable with increasing pressure resulting a sharp decrease in spin polarization ratio. It can be stated that the pressure affects minority spin states rather than that of majority spins and lead to a slight reconstruction of minority spin states which lie below the Fermi level. In particular, energy band gap of minority spin states in equilibrium structure is obviously not destroyed, but the Fermi level is shifted outside the gap.     

Multiphoton ionization of molecules under the conditions of strong field-induced perturbation of Rydberg states

Multiphonon ionization of the H₂ molecule under the action of a weak (probe) field, which provides the initial population of the low-lying (working) level, and intense monochromatic linearly polarized radiation is studied. The multiphoton ionization process occurs under the conditions of strong field perturbation of two intermediate Rydberg series, np0(¹Σ _u ⁺ and np2(¹Π_u), of the optical R(0)branch which have different ionization potentials. The series are occupied simultaneously as a result of single-photon absorption by an excited H ₂ ^* molecule in the working state 4s σH′¹Σ _g ⁺ (v=0). As a result of the irregularity in the arrangement of the intermediate levels from a large group of states that are combined in the multiphoton ionization process a sharp and irregular change occurs in the dependence of the shifts and widths Γ_n of the levels on the intensity f of the strong field in a transition from one level to another. It is shown that for field intensities f such that the level widths remain much less than the splitting between the levels (Γ_n≪/n ³) the stabilizing effect (i.e., the field-induced narrowing of the levels as f→∞) in the form Γ_n ∝ 1/f ² (as happens in atoms with a structureless core) is not observed in molecular systems. Zh. éksp. Teor. Fiz. 115, 1987–2000 (June 1999)     

Dynamic and spectral mixing in nanosystems

In the framework of a simple spin-boson Hamiltonian we study an interplay between dynamic and spectral roots to stochastic-like behavior. The Hamiltonian describes an initial vibrational state coupled to discrete dense spectrum reservoir. The reservoir states are formed by three sequences with rationally independent periodicities 1; 1 ± δ typical for vibrational states in many nanosize systems (e.g., large molecules containing CH₂ fragment chains, or carbon nanotubes). We show that quantum evolution of the system is determined by a dimensionless parameter δΓ, where Γ is characteristic number of the reservoir states relevant for the initial vibrational level dynamics. When δΓ > 1 spectral chaos destroys recurrence cycles and the system state evolution is stochastic-like. In the opposite limit δΓ < 1 dynamics is regular up to the critical recurrence cycle k _c and for larger k > k _c dynamic mixing leads to quasi-stochastic time evolution. Our semi-quantitative analytic results are confirmed by numerical solution of the equation of motion. We anticipate that both kinds of stochastic-like behavior (namely, due to spectral mixing and recurrence cycle dynamic mixing) can be observed by femtosecond spectroscopy methods in nanosystems in the spectral window 10¹¹–10¹³ s⁻¹     

Zeeman splitting factor of the Er3+ ion in a crystal field

Numerical computations are presented on the energy levels of the Er³⁺ ion in crystalline fields of cubic, trigonal, tetragonal and orthorhombic symmetry. Zeeman splitting factors were obtained from the level splitting in an additional magnetic field. For the quartet Γ₈ states in cubic symmetry the Zeeman effect is described by an effective Hamiltonian ℋ= gμ_BBJ+ uμ_BBJ³ with the parametersg andu calculated for mixed fourth- and sixth-order potentials. For the eight doublets in the lower symmetry of an axial trigonal or tetragonal crystal field the principalg tensor components g_∥ and g_⊥ were calculated. The results of such calculations for a ground-state doublet can exactly account for the experimental data obtained on around 70 erbium centers in various crystalline hosts. However, sometimes different sets of parameters give comparably good results. An empirical rule of constant trace g_∥ + 2g_⊥ is supported by the calculations. In contrast to analytical treatments the effect of the crystalline field can be followed over a continuous range of the crystal field parameters. This allows one to establish relations on the relative signs of tensor components. It is found that the measured trace of tensors |g_∥| + 2|g_⊥| is not always equal to their real trace g_∥ + 2g_⊥. In an exploratory calculation a nonaxial center was simulated in an orthorhombic field, with calculation of the three principal values g_x, g_y and g_z. A good agreement is obtained for the recently reportedg values of an erbium center in silicon.     

The quenching of nucleon yields in the nonmesonic weak decay of Λ -hypernuclei and the three-body weak decay process

Recent exclusive coincidence measurements of non-mesonic weak decays (NMWD) reported for the ratio of the partial decay width of neutron-induced-to-proton-induced NMWD, Γ_n/Γ_p , values of 0.45±0.11±0.03 and 0.51±0.13±0.04 for 5lam and ¹² _Λ C , respectively. These observations agree well with the improved theoretical Γ_n/Γ_p ratios which are in the range of 0.3-0.7. It appears that the long-standing discrepancy between the experimental and theoretical values of Γ_n/Γ_p has finally been solved. However, when compared to the results of intra-nuclear cascade (INC) calculations, the observed numbers of both single nucleons and coincident nucleon pairs are strongly quenched. The quenching of the proton yield observed previously has been interpreted as an increase of the Γ_n/Γ_p ratio. On the other hand, significant contributions from the two-nucleon-induced three-body process ΛNN → nNN are predicted. Indeed, the angular correlation of the emitted nucleon pairs in the NMWD of ¹² _Λ C showed not only decay events in back-to-back kinematics, but also events with non-back-to-back kinematics. In this paper we show that the difficulties to extract the correct Γ_n/Γ_p ratio from the proton spectra is related to the three-body weak-interaction process which strongly quenches the nucleon yields.     

Giant population inversion of hot electrons in GaAs/AlAs type heterostructures with quantum wells

The heating of electrons in an Al_xGa_1−x As/GaAs (x>0.42) heterostructure in a lateral (directed along the heterointerfaces) electric field is studied. Population inversion on the size-quantization subbands of the Γ valley of GaAs and a giant population inversion between the X-valley states of Al_xGa_1−x As and Γ-valley states of GaAs are predicted. The possibility of using these inversions for achieving stimulated IR emission is discussed. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 73–77 (10 July 1998)     

First-principles calculation of structural and electronic properties of pyrochlore Lu2Sn2O7

A Density functional theory method within generalized gradient approximation has been performed to obtain the static lattice parameters, oxygen positional parameter, bond length and bond angle and electronic properties of ideal Lu₂Sn₂O₇ pyrochlore. The results are in excellent agreement with available experimental measurements. Density of states (DOS) of this compound was presented and analysed. We also notice the presence of the hybridization between oxygen and Lu metal. The band structure calculations show that the compound has direct band gap of 2.67 eV at the Γ point in the Brillouin zone and this indicates that the material has a semi-conducting feature.     

Rotational structures in the 125Cs nucleus

The collective band structures of the ¹²⁵Cs nucleus have been investigated by in-beam γ-ray spectroscopic techniques following the ¹¹⁰Pd ( ¹⁹F, 4n) reaction at 75MeV. The previously known level scheme, with rotational bands built on πg_7/2, πg_9/2 and πh_11/2 orbitals, has been extended and evolves into bands involving rotationally aligned ν(h_11/2)² and π(h_11/2)² quasiparticles. A strongly coupled band has been reassigned a high-K πh_11/2 ⊗ νg_7/2 ⊗ νh_11/2 three-quasiparticle configuration and a new side band likely to be its chiral partner has been identified. Configurations assigned to various bands are discussed in the framework of Principal/Tilted Axis Cranking (PAC/TAC) model calculations.     

High spin structure of 117I

High-spin states in ¹¹⁷I have been studied via the ¹⁰³Rh(¹⁸O, 4n) reaction at a beam energy of 85 MeV. Many deformed rotational bands built on the proton h_11/2, g_7/2, and g_9/2 orbitals have been identified. Among them, an unfavoured rotational band and a quasi-gamma band based on the h_11/2 state have been newly observed. Moreover, positive-parity states above I^π= 35/2⁺ reported in the previous work have been rearranged. Several energetically favoured states have been assigned to noncollective oblate states based on various quasiparticle configurations with β₂≈ 0.18–0.19 and γ= 60°. Received: 1 March 1999