Balanced Parametric Amplifier of the MM Range

Results of research of balanced circuit of noncooled input parametric amplifier for 60 – 65 GHz band are given in this work. Elektrodynamics characteristics of oscillatory system in which there were used waveguide converters of H ₁₀-wave into H ₂₀ based on angle inhomogeneous are studied. The experimental results of research of amplifier models that based on BSD without package are shown. Amplification factor is 10–15 dB; noise temperature is 400 - 500 ⁰K.     

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor(DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.     

A Very Low-Noise Integrated 3MM-Wave Schottky Diode Mixer and PHEMT IF Amplifier

An integrated 3mm-wave Schottky diode mixer and pseudomorphic high-electron-mobility transistor (PHEMT) IF amplifier with record noise performance at room temperature is described. The design has shown the room-temperature double-sideband (DSB) receiver noise temperature T_R^DSB of 190 K at 100 GHz due to a very low conversion loss in the full-height waveguide mixer and an ultra-low noise of the PHEMT IF amplifier. The receiver noise temperature has been reduced by a factor of 1.5 in comparison with the best previously reported 3mm-wave Schottky diode mixer receiver.     

Kα波段TE01模基波回旋速调放大器的设计与实验

在回旋速调放大器自洽非线性大信号理论分析和数值计算的基础上,给出了一支Kα波段TE₀₁模4腔基波回旋速调放大器的设计方案,并完成了样管的研制.同时对样管进行了热测实验,得到了如下实验结果:注电压为70 kV,电流为10 A,输入功率为60 W,磁场强度1.31 T,中心频率34 GHz,峰值功率245 kW,平均功率大于3 kW,增益36.1 dB,效率 35%,3 dB带宽大于280 MHz. 关键词： 回旋速调放大器 注-波互作用 群聚腔 输入腔     

Atomic and molecular spectroscopy with a continuous-wave, doubly resonant, monolithic optical parametric oscillator

Doppler-broadened atomic and molecular spectra were observed with a one octave tunable, continuous-wave, doubly resonant, monolithic optical parametric oscillator (OPO) using 5% MgO-doped LiNbO₃ as a non-linear crystal with a birefringent phase-matching configuration. By tuning the frequency of a pump laser, longitudinal mode selection over 20 successive modes, corresponding to a 60 GHz span, was possible, owing to the simple structure of the monolithic OPO. Continuous frequency tuning was achieved using an external waveguide-type electrooptic phase modulator (EOM). By changing the modulation frequency of the EOM, frequency tuning of the optical sidebands over 12 GHz was possible, which is larger than the one free spectral range of the monolithic cavity of 3 GHz. We could observe the Cs-D₁ (894 nm), Cs-D₂ (852 nm), Rb-D₁ (795 nm), acetylene R9 (1520 nm) and P9 (1530 nm) transitions with the single monolithic OPO.     

High LO-to-RF isolation 94 GHz coplanar monolithic down-converter for FMCW radar sensor applications

This paper presents a 94 GHz monolithic down-converter with low conversion loss and high local oscillator (LO)-to-RF isolation using the 0.1 μm T-gate metamorphic high electron-mobility transistor (MHEMT) technology. The down-converter consists of a one-stage amplifier and a single-balanced mixer based on the high-directivity tandem coupler structure using the air-bridge crossovers, thereby amplifying the RF signals and maximizing the LO-to-RF isolation by using an inherent S₁₂ isolation characteristic of the amplifier and good phase balance of the tandem coupler. The fabricated one-stage amplifier using a 30 μm × 2 MHEMT shows a small signal gain of 7 dB at 94 GHz. The single-balanced mixer comprising two 20 μm × 2 MHEMT Schottky diodes and the tandem coupler with an additional λ/4-length line exhibits the conversion loss less than 7.8 dB and the LO-to-RF isolation higher than 30 dB in a RF frequency range of 91–96 GHz. Two circuits designed both for a 50 Ω impedance system are integrated into the down-converter of a 2.6 × 2.5 mm² chip size, and it shows a low conversion loss of ∼1 dB at 94 GHz and excellent LO-to-RF isolation above 40 dB in a frequency range of 90–100 GHz. This is the best isolation among the W-band monolithic down-converters reported to date.     

W-Band Second-Harmonic Gyrotron Traveling Wave Amplifier with Distributed-Loss and Severed Structures

The second harmonic TE₀₂ gyrotron traveling wave amplifier (gyro-TWT) is a high-power, broadband, millimeter-wave amplifier with a low applied magnetic field. Mode-selective interaction circuits were applied to suppressing spurious oscillations. However, the mode-selective interaction circuit may perturb the operating mode in the gyro-TWT. A multi-stage gyro-TWT design with distributed-loss and severed structures is proposed to stabilize the amplification. This study presents a nonlinear analysis of typical oscillations, including absolute instability, gyrotron backward oscillation (gyro-BWO) and reflective oscillation. The lossy and severed sections of the multi-stage gyro-TWT seem to increase effectively the start-oscillation currents of the absolute instability, gyro-BWO, and reflection oscillation. The multi-stage gyro-TWT is predicted to yield a peak output power of 215 kW at 89.9 GHz with an efficiency of 14.3 %, a saturated gain of 60 dB and a bandwidth of 1.7 GHz for a 100 kV, 15 A electron beam with an axial velocity spread _z/ _z = 5%.     

Si1−xGex/Si multi-quantum well phototransistor for near-infrared operation

For the first time in the literature, we report the monolithic integration of SiGe near-infrared phototransistor and planar hetero-junction bipolar transistor (HBT). The phototransistor is made with SiGe/Si multi-quantum well structure (MQW_PHT). At room temperature, the MQW_PHT reveals an optical responsivity of 1904 mW/A at 0.85 μm and 1.25 mW/A at 1.3 μm under the reversed bias of V_CE=1.5 V. For electrical DC and microwave performance, the SiGe HBT has a current gain of 160 and a cut-off frequency (f_T) of 25 GHz, respectively.     

Diode grids for electronic beam steering and frequency multiplication

Loading a grid with diodes offers the possibility of two-dimensional control of millimeter waves that is analogous to holography and nonlinear optics. These grids are attractive because they are suitable for monolithic integration with gallium-arsenide Schottky diodes and for high-power operation. Here we present grid designs for electronic beam-steering and harmonic generation. The beam-steering grid is a programmable reflector, where the diode bias controls the phase shift of the reflection. The variation of the phase across the grating sets the direction of the reflected beam. The reflection loss in computer simulations is 3dB at 90GHz. The harmonic-generating grid acts as a nonlinear reactive surface, where the nonlinear capacitance of the diodes produces the harmonic frequencies. Quasioptical filters select the desired harmonic. Computer simulations predict that a 65GHz-to-130GHz doubler would have an output power of 0.56W/cm² and a conversion efficiency of 35%.     

High Doping Density Schottky Diodes in the 3MM Wavelength Cryogenic Heterodyne Receiver

The paper describes a 3mm cryogenic mixer receiver using high doping density (“room-temperature”) Schottky diodes. The measured equivalent noise temperature T_eq of the diodes is 109 K at 20 K, which is much higher than the T_eq of the low doping density (“cryogenic”) diodes. In spite of this, the double-sideband (DSB) noise temperature of the cryogenic receiver developed is 55 K at 110 GHz, owing to the low conversion loss of the mixer and ultra-low noise of the PHEMT IF amplifier. This is the lowest noise temperature ever reported for a Schottky diode mixer receiver. The results obtained are useful for the development of submm receivers in which high doping density Schottky diodes are used.     

Experimental evaluation of coplanar waveguide discontinuities

Design guidelines for conductor backed coplanar waveguide are reviewed. A range of coplanar waveguide discontinuities for use in a 44 GHz monolithic low noise amplifier and appropriate equivalent circuits are presented. The discontinuities are characterised over the frequency range 30–60 GHz. Details of the fabrication process for the test structures are also given.     

Double-layer microwave absorber of nanocrystalline strontium ferrite and iron microfibers

Microwave absorption properties of the nanocrystalline strontium ferrite (SrFe₁₂O₁₉) and iron (α-Fe) microfibers for single-layer and double-layer structures are investigated in a frequency range of 2 GHz-18 GHz. For the single-layer absorbers, the nanocrystalline SrFe₁₂O₁₉ microfibers show some microwave absorptions at 6 GHz-18 GHz, with a minimum reflection loss (RL) value of -11.9 dB at 14.1 GHz for a specimen thickness of 3.0 mm, while for the nanocrystalline α-Fe microfibers, their absorptions largely take place at 15 GHz-18 GHz with the RL value exceeding -10 dB, with a minimum RL value of about -24 dB at 17.5 GHz for a specimen thickness of 0.7 mm. For the double-layer absorber with an absorbing layer of α-Fe microfibers with a thickness of 0.7 mm and matching layer of SrFe₁₂O₁₉ microfibers with a thickness of 1.3 mm, the minimum RL value is about -63 dB at 16.4 GHz and the absorption band width is about 6.7 GHz ranging from 11.3 GHz to 18 GHz with the RL value exceeding -10 dB which covers the whole K_u-band (12.4 GHz-18 GHz) and 27% of X-band (8.2 GHz-12.4 GHz).     

W波段回旋行波管放大器的模拟与设计

回旋行波管放大器是高功率毫米波雷达发射系统最重要的候选者.通过对回旋行波管放大器中的绝对不稳定性、回旋返波振荡以及电子注-波互作用的研究，讨论了回旋行波管的稳定性、寄生模式的抑制和工作参数的优化等问题，给出了W波段TE₀₁模回旋行波管放大器的模拟设计结果.PIC粒子模拟结果表明，在电子注电压100kV、电流10A、工作磁场3.52T时，94GHz的基波回旋行波管放大器可获得大于250kW的输出功率、40dB的增益、大于25％的效率和约5％的带宽. 关键词： W波段 回旋行波管放大器 模拟 设计     

A broadband ytterbium-doped tunable fiber laser for <Superscript>3</Superscript>He optical pumping at 1083 nm

Large amounts of hyperpolarized ³He gas with high nuclear polarization rates are required for use in neutron spin filters or nuclear magnetic resonance imaging of human lung. Very high efficiency can be obtained by metastability exchange optical pumping using multimode lasers to excite the ^[ 2 _]3S-^[ 2 _]3P transition at 1083 nm. Broadband ytterbium-doped tunable fiber lasers have been designed for that particular application. Different options for the architecture of the fiber oscillator are presented and compared. Emphasis is given to a linear cavity configuration that includes a high reflectivity fiber mirror and a low reflectivity tunable fiber Bragg grating. Optical measurements are performed to finely characterize the spectral behavior of the lasers. Atomic response is also quantitatively probed to assess the optimal design of the oscillator for optical pumping. Multimode operation matching the 2 GHz Doppler-broadened helium resonance line and tunability over more than 200 GHz are demonstrated. Boosting the output of this fiber laser with a Yb-doped fiber power amplifier, all-fiber devices are built to provide robust, high-power turnkey sources at 1083 nm for improved production of laser polarized ³He. PACS 42.60.-v; 42.55.Wd; 32.80.Bx     

120 W high repetition rate Nd:YVO<Subscript>4</Subscript> MOPA laser with a Nd:YAG cavity-dumped seed laser

A master oscillator power amplifier (MOPA) system in which the output from an end-pumped Nd:YAG oscillator cavity dumped at 500 kHz is scaled up by a four-stage Nd:YVO₄ amplifier is reported. Decrease in extraction efficiency of the amplifier chain with crystals different from that in the oscillator was analyzed. With the 5.4 W seed output, 118 W of power was extracted from the amplifier chain at the pump power of 345 W, with an extraction efficiency of 34.2% and an overall optical–optical efficiency of 30.9% for the MOPA system. The beam quality factors were measured as M _x ²=1.45 and M _y ²=1.59 in two orthogonal directions, respectively.     

1-THz low-noise SIS mixer with a double-dipole antenna

A quasi-optical mixer containing two Nb/Al/AlO_x/Nb superconducting tunnel junctions integrated into a NbTiN/SiO₂/Al microstrip line is studied experimentally in the 800–1000 GHz frequency range. The mixer is developed as an optional front end of the heterodyne receiver operating in frequency band 3 or 4 and incorporated into the HIFI module of the Herschel space-borne telescope. The double-dipole antenna of the mixer is made of NbTiN and Al films; the quarter-wavelength reflector, of a Nb film. The mixer is optimized for the IF band of 4–8 GHz. The double-sideband noise temperature T _RX measured at 935 GHz is 250 K at a mixer temperature of 2 K and an IF of 1.5 GHz. Within 850–1000 GHz, T _RX remains below 350 K. The antenna pattern is symmetrical with a sidelobe level below −16 dB.     

Design and Implementation of a Millimeter Wave Monolithic Integrated Mixer

This paper discusses design and implementation of a millimeterwave monolithic integrated balanced mixer, the measured performance compared with the predicted one is also reported. By designing this MMIC mixer, various mathematical methods are used, in which the Method of Conversion Matrix has been extended by the author to meet the requirement of inter-modulation analysis. The mixer is realized in a 2×3mm ² GaAs chip, working in Ka band with bandwidth of 5GHz with a noise figure less than 10 dB.     

Operation of a 32 GHz gyrotron

The design and operation of a 32 GHz pulsed gyrotron are reported. The device is step-tuned between the TE_1,2 (24.16 GHz) and TE_0,2 (31.78 GHz) modes with cathode voltages ranging from 30 to 40kV and beam current up to 5.0A. Experimental frequencies are in close agreement with the self-consistent calculated values and in the TE_2,2 resonator mode an output peak power of 6kW corresponding to an 18% efficiency was measured by using a fast response calorimeter with a thermal sensitivity of 0.1°C/Wmin.     

Experimental study of a broad-band XeCl double-pass amplifier with SBS mirror

An oscillator-amplifier XeCl laser system has been used to experimentally investigate the effectiveness of a liquid stimulated Brillouin scattering (SBS) mirror for correcting the spatial aberrations of broad-band laser radiation in a double-pass amplifier. It has been found that the SBS amplifier performance is strongly dependent on the intensity I _p exciting the Brillouin medium. A good beam reconstruction has been attained at I _p1GW/cm², whereas highly aberrated output beams have been delivered by the SBS amplifier for I _p>1 GW/cm². By comparing the broad-band SBS amplifier performance to that of the same amplifier with a dielectrically coated flat mirror at one end, it has been found that the use of a SBS mirror is advantageous to obtain lower divergence output beams only for low energy pump beams (<1 mJ).     

掺Er光纤飞秒激光器中高信噪比载波包络位相偏移频率获取的实验研究

在实验上分析了掺Er光纤光学频率梳中激光器与一级放大器之间光纤长度、 光纤扰动以及放大器抽运功率对倍频程光谱和载波包络位相偏移频率(f₀)信噪比的影响. 通过系统优化, 实现了40 dB信噪比的f₀输出, 为f₀的长期锁定和光纤光学频率梳的实现提供了技术保障.