Sampling a terahertz dipole transition with subcycle time resolution

We present a time-resolved technique to measure optical excitation processes with a time resolution shorter than the oscillation period of the exciting light. Our terahertz (THz) experiments fully resolve the polarization dynamics of electrons in semiconductor heterostructures when they are excited by a THz pulse. The time resolution of the polarization enables us to deduce the population dynamics of the excited state, which includes the dynamics of a virtual population in the case of off-resonant excitation.     

The dynamics of a THz Rydberg wavepacket

An optically excited Rydberg wavepacket can be generated by exciting the electron from a low-lying state to a coherent superposition of high-lying states with a short broadband optical pulse. A special kind of Rydberg wavepacket is generated in the case of a interaction of a weak THz half cycle pulse with a stationary Rydberg state, called the THz wavepacket. This THz wavepacket is a coherent superposition of the initial Rydberg state and its neighbouring states. We have investigated the time evolution of THz wavepackets by measuring the impact of two in time delayed half cycle pulses ( ≈ 200 V cm^-1) on the population of a stationary (n = 40) Rydberg state in rubidium. The first half cycle pulse creates the THz wavepacket and the second half cycle pulse probes the dynamics of the THz wavepacket. We support our experimental data by numerically solving the Schr?dinger equation and with a semi-classical picture. Whereas an optically excited wavepacket is initially localized, a THz wavepacket is initially delocalized and becomes localized after half a revival time. Received 23 August 2000 and Received in final form 27 March 2001     

Two-pulse nondegenerate excitation of electron-hole wave packets in quantum wells: tunable terahertz emission

It was shown recently that driving an optically excited quantum well with a terahertz (THz) frequency electric field can lead to higher-harmonic generation in the THz regime: the THz analog of the dynamic Franz-Keldysh effect. We propose a new double-pulse excitation method that not only increases the efficiency of the harmonic generation but is also able to control somewhat the dominant upshifted harmonic of the THz radiation by means of selective excitation of spatially chosen electron-hole relative motion wave packets.     

铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.     

Dynamic Franz-Keldysh effect: perturbative to nonperturbative regime

We study theoretically the dynamic Franz-Keldysh effect for quantum wells excited by a cw optical field and a terahertz (THz) frequency driving field. By monitoring the THz sidebands one can show that for, increasing THz-field amplitudes, nonperturbative effects become predominant, and one must account for THz-field-induced nonlinearities to all orders.     

Broadband asymmetric transmission for linearly and circularly polarization based on sand-clock structured metamaterial

We proposed a sandwich structure to realize broadband asymmetric transmission(AT) for both linearly and circularly polarized waves in the near infrared spectral region. The structure composes of a silica substrate and two sand-clock-like gold layers on the opposite sides of the substrate. Due to the surface plasmons of gold, the structure shows that the AT parameters of linearly and circularly polarized waves can reach 0.436 and 0.403, respectively. Meanwhile, a broadband property is presented for the AT parameter is over 0.3 between 320 THz and 340 THz. The structure realizes a diode-like AT for linearly wave in forward and circularly wave in backward, respectively. The magnetic dipoles excited by current in the two gold layers contribute to the broadband AT. The current density in top and bottom metallic layers illustrates the mechanism of the polarization conversion for broadband AT in detail.     

Compact and high-power broadband terahertz source based on femtosecond photonic crystal fiber amplifier

We present a review of the development of a compact and high-power broadband terahertz (THz) source optically excited by a femtosecond photonic crystal fiber (PCF) amplifier.The large mode area of the PCF and the stretcher-free configuration make the pump source compact and very efficient.Broadband THz pulses of 150 μW extending from 0.1 to 3.5 THz are generated from a 3-mm-thick GaP crystal through optical rectification of 12-W pump pulses with duration of 66 fs and a repetition rate of 52 MHz.A strong saturation effect is observed,which is attributed to pump pulse absorption;a Z-scan measurement shows that three-photon absorption dominates the nonlinear absorption when the crystal is pumped by femtosecond pulses at 1 040 nm.A further scale-up of the THz source power is expected to find important applications in THz nonlinear optics and nonlinear THz spectroscopy.     

Infrared and far-infrared spectroscopy of CH3OH: TeraHertz laser lines and assignments

We use a ¹³CO₂ laser as optical pumping source to search for new THz laser lines generated from ¹³CH₃OH. Nineteen new THz laser lines (also identified as far-infrared, FIR) ranging from 42.3 μm (7.1 THz) to 717.7 μm (0.42 THz) are reported. They are characterized in wavelength, offset, relative polarization, relative intensity, and optimum working pressure. We have assigned eight laser lines to specific rotational energy levels in the excited state associated with the C-O stretching mode.     

High-performance fiber-laser-based terahertz spectrometer

We have developed a rapid scanning terahertz (THz) spectrometer based on a synchronized two-fiber-laser system. When the system is set to the asynchronous optical sampling mode, THz spectra extending to 3 THz can be acquired within 1 μs at a signal-to-noise ratio of the electric field of better than 20. Signal averaging results in a dynamic range of more than 60 dB, and frequency components of more than 4 THz can be detected. When the lasers are set to the same repetition rate, electronically controlled optical sampling at a rate of 2.5 kHz is demonstrated, making the system versatile for different spectroscopic applications. Finally, we compare the THz emission spectra of a photoconductive switch that is pumped at 780 nm and a nonlinear DAST crystal excited at 1550 nm. We find that the spectral range of the spectrometer is significantly enhanced at higher frequencies, while the dynamic range remains constant.     

Coherent Interband and Intersubband Dynamics in Terahertz-Driven GaAs Quantum Wells

We theoretically investigate the optical absorption spectra and charge density by subjecting a GaAs quantum well to both an intense terahertz (THz)-frequency driving field and an optical pulse within the theory of density matrix. In presence of a strong THz field, the optical transitions in quantum well subbands are altered by the THz field. The alteration has a direct impact on the optical absorption and the charge density. The excitonic peak splitting and THz optical sideband in the absorption spectra show up when changing the THz field intensity and/or frequency. The Autler-Towns splitting is a result from the THz nonlinear dynamics of confined excitons. On the other hand, the carrier charge density is created as wave packets formed by coherent superposition of several eigenstates. The charge density exhibitsquantum beats for short pulses and/or wider wells and is modulated by the THz field.     

Rabi Oscillations and Coherence Dynamics in Terahertz Streaking-Assisted Photoelectron Spectrum

We present an approach,a Terahertz streaking-assisted photoelectron spectrum(THz SAPS),to achieve direct observations of ultrafast coherence dynamics with timescales beyond the pulse duration.Using a 24 fs probe pulse,the THz SAPS enables us to well visualize Rabi oscillations of 11.76 fs and quantum beats of 2.62 fs between the 5S_1/2 and 5P_3/2 in rubidium atoms.The numerical results show that the THz SAPS can simultaneously achieve high resolution in both frequency and time domains without the limitation of Heisenberg uncertainty of the probe pulse.The long probe pulse promises sufficiently high frequency resolution in photoelectron spectroscopy allowing to observe Autler-Townes splittings,whereas the streaking THz field enhances temporal resolution for not only Rabi oscillations but also quantum beats between the ground and excited states.The THz SAPS demonstrates a potential applicability for observation and manipulation of ultrafast coherence processes in frequency and time domains.     

Photoexcited GaAs surfaces studied by transient terahertz time-domain spectroscopy

The transmission characteristics of an air-GaAs interface and the transient absorption and index spectra of the thin, photoexcited surface layer are investigated subsequent to excitation by a femtosecond laser pulse. We find that the total phase change and transmission of a terahertz (THz) probe pulse are dominated by interface effects. This observation has important implications in the interpretation of THz time-domain spectroscopy data of absorbing media. We also observe that the THz pulse apparently arrives at the detector as much as 60 fs earlier when it is transmitted through an optically excited GaAs wafer. This effect is fully explained in terms of a frequency-dependent transmission and phase shift at the air-GaAs interface and is not associated with superluminal propagation.     

激光等离子体太赫兹辐射源的频率控制

实验研究了双色超快强激光场作用于氮气分子束所产生的宽带太赫兹(THz)辐射光谱随等离子体介质的密度和长度的依赖关系, 发现THz辐射的中心频率随等离子体密度提高和长度减小而增大(0.8-1.4 THz), 且谱宽也随之增加(0.78-1.53 THz). 分析和计算表明, 太赫兹光谱的变化由等离子体振荡频率和谱宽决定. 该发现为等离子体宽带太赫兹辐射源的光谱操控提供了新思路.     

Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide(In Sb) and indium arsenide(In As) in an intense terahertz(THz) field are studied by using the method of ensemble Monte Carlo(EMC)at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 k V/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in In Sb, and only 5 THz in In As, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in In Sb, while impact ionization and intervalley scattering work together in In As. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.     

Terahertz-radiation-enhanced broadband terahertz generation from large aperture photoconductive antenna

A technique of enhancing and broadening terahertz (THz) wave radiation from large aperture photoconductive (PC) antenna is presented in this paper. In this technique, the PC antenna is excited by both the optical and previously generated THz pulses by a laser-induced air plasma created in front of PC antenna and an enhanced and broadened THz wave signal is obtained. The theoretical and experimental investigation shows that the superposition is the main mechanism for this enhancement. The technique shown in this paper can be very useful for THz imaging and spectroscopy.     

THz surface plasmon jump between two metal edges

We excite surface plasmon in the THz frequency range at a metal surface using a diffraction grating coupler. Then the excited surface plasmon propagates along the flat metal surface, scatters into free space at the sample edge and then couples onto the flat surface of a second device similar to the emitting one. Using THz time-domain spectroscopy, we study plasmon propagation and its coupling processes in time and frequency domains. We measure a surface plasmon propagation length, at a flat air-aluminum interface, smaller than expected. We report for the first time a high coupling efficiency of the THz surface plasmon field between the two grating devices separated by a several centimeters-thick air gap.     

不同抽运光强激发窄带隙半导体产生太赫兹辐射的研究

研究了窄带隙材料InAs和三种不同掺杂浓度的InN在不同抽运光强激发下产生太赫兹(THz)波的辐射特性.实验结果表明:在相同的抽运光强下,InN和InAs辐射的THz信号强度在同一量级,InAs较InN辐射效率要高一些.随着抽运光强的增大,这几种材料的发射光谱变得更宽,当抽运光增大到一定强度时,它们的发射光谱半极大值全宽(HMFW)趋于恒定.InN比InAs更容易在较低功率的抽运光作用下获得宽带太赫兹光谱.研究也表明,不同掺杂浓度对辐射THz波的强度及辐射效率有很大影响.这项研究对于探索半导体表面辐射太赫 关键词： InN InAs 太赫兹 抽运光强     

Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications

The possibility of using plasma wave field effect transistor in a time domain terahertz (THz) spectroscopy setup is presented. We demonstrate that High Electron Mobility Transistors (HEMTs) is an efficient device for detection of pulsed terahertz electric fields generated with a femtosecond laser oscillator. The response was observed in the frequency range of about 1 THz, far above the cutoff frequency of the transistors at room temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel and that significant improvement of the active device can be achieved by increasing the drain current. The two-dimensional terahertz imaging applications clearly demonstrate that plasma wave nanometer HEMT should be employed as efficient future detectors in a matrix configuration.     

Controlling the spectrum of high-power terahertz radiation from a laser-driven plasma wave

Generation of strong THz waves is a very important and difficult research issue. We performed particle-in-cell (PIC) simulation studies to investigate the possibility of powerful THz generation and spectrum controllability by using a laser-driven plasma wave. Our results show that it is possible to produce spectrum-controllable high-power (>1 MV/cm) THz waves by manipulating the plasma density profiles. This method may provide a good way for coherent high-power THz radiation sources, of which the spectrum ranges from a narrow bandwidth to a wide bandwidth.     

Generation of high-frequency phonons by defect-induced one-phonon absorption

By defect-induced one-phonon absorption of pulsed infrared radiation, we excited in diamond phonons at 28 THz. Their anharmonic decay leads to nonthermal frequency distributions of acoustic phonons which we investigated in a frequency range between 0.5 THz and 6 THz by use of vibronic sideband spectroscopy.