Decimeter-Wave Resonant Relativistic BWO

In this paper, we present the results of numerical and experimental studies of a resonant relativistic backward-wave oscillator. Using reflections of the operating TM₀₁ mode from the ends of an electrodynamic system, optimal conditions for the interaction of an electron beam with both the backward (-1)st-order spatial harmonic and the forward fundamental harmonic are reached. Single-mode oscillations at 3.6 GHz with a peak pulse power of 5 GW and an efficiency of 30% were obtained in the experiment. We show the possibility of a 15% oscillation-frequency change corresponding to the FWHM power level by varying the period of a slow-wave structure at constant electron-beam parameters.     

X波段10 GW高功率返波管振荡器设计

设计了一个高效率的高功率返波管振荡器,通过添加内导体并采用过模慢波结构,实现器件的高效率、高功率运行. 当电子能量和束流分别为1.3 MeV和17 kA时,采用2.5维Particle in Cell (PIC)程序模拟得到频率为8.8 GHz,功率为10.4 GW的微波输出. 关键词： 内导体 相对论返波管 过模慢波结构     

Relativistic three-centimeter backward-wave tube with 3 GW pulse power

In this paper, we present the results of investigations of a uniform three-centimeter relativistic backward-wave tube (BWT) with circular waveguide operating mode E₀₁ with pulse power 3 GW and efficiency about 20%. We have obtained a dependence of the radiation pulse duration on the generated power. We discuss the problems involved in shortening the duration of the microwave pulses in oscillators with high microwave field intensity on the surface of the slow-wave structure. Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 84–88, December, 1996.     

X波段极化可重构高功率微波辐射器仿真设计

为了提高高频段高功率微波反射面天线的馈电效率,同时使波束波导馈线更加紧凑,提出一种新型的X波段极化可重构高功率微波辐射器结构。通过波纹喇叭辐射器产生准高斯的HE11模辐射,采用双相位修正镜组成的波束变换系统实现将准高斯波束转换为电场分布更为均匀的平顶波束或其余期望分布的波束,平顶分布的输出波束可使得馈源在相同介质窗尺寸下获得更高的功率容量,同时实现了波束传播方向的90转弯;此外采用双圆极化栅网的级联组合,实现了对输出波束极化特性的调变。通过全电磁波仿真分析验证了该辐射器的设计思路。     

X波段高峰值功率速调管功率合成器设计

 基于微波电路理论和EBMA(extended boundary condition model analysis)电磁计算方法,先后设计了一个工作在9 GHz的4合1和8合1功率合成器。功率合成器可将多个侧壁矩形波导中相同输入的TE10模电磁波在中心圆波导中以TE01模式输出,实现功率的合成。利用EBMA方法和CST软件对所设计功率合成器的传输系数进行了计算,在中心频率9 GHz处,计算结果分别为1.00和0.99,从而验证了功率合成器具有良好的功率合成效果。对于8合1功率合成器,还根据模型简化的想法,使得功率合成器加载后,对输出腔间隙阻抗的计算成为可能。     

X-band AlGaN/GaN HEMTs with high microwave power performance

An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22 GHz and a maximum oscillation frequency (fmax) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency ...     

X波段高功率微波一维相扫漏波天线阵

研究了一种可一维相扫的X波段高功率微波漏波天线阵,该天线阵由高功率微波功分网络、移相器和漏波平面阵组成。漏波平面阵由8个矩波导漏波线阵组成,增益29.6dB,口面效率70%,设计功率容量0.91GW;功分器网络采用圆波导TM01-双矩波导TE01模式变换和串列式矩波导功分器形式,输出端口间的不平衡度小于1.6dB,设计功率容量1.1GW;移相器采用侧壁簧片弯进改变矩波导宽度,实现0~360°移相,单路功率容量150MW。整阵相扫性能的全波仿真分析结果表明,在主瓣增益下降3dB的情况下,扫描角度可达到±40°。     

Pulse shortening causes in high power BWO and TWT microwave sources

Pulse shortening, an effect where the microwave output power from a high-power tube terminates or significantly degrades well before the end of the electron beam pulse, severely limits the energy per pulse and average power capability of many high power microwave (HPM) sources. The cause of pulse shortening varies from device to device, and different causes can simultaneously contribute to the observed power reduction behavior which tends to obscure the underlying mechanisms and possible solutions. In this paper, we show a variety of experimental situations that lead to pulse shortening in HPM sources. The mechanisms of the different pulse shortening triggers are examined in detail in high-vacuum traveling wave tubes (TWT) and plasma-filled backward-wave oscillators (BWO). We find that there are many different causes of pulse shortening such as arcing, mode competition, beam instability, etc. However, the most commonly observed situation that leads to pulse shortening is the combination of sufficiently high power electron beams and poor vacuum conditions that lead to plasma generation. The presence of plasma significantly modifies the beam coupling to the circuit, which can affect the microwave production efficiency on very short time scales. The situations lending to pulse shortening and possible solutions are presented     

3cm相对论返波管的实验研究

简述相对论返波管的基本原理,详细介绍了实验装置与测试方法,报导了初步实验结果,在3cm波段峰值功率约98MW,效率10％左右。     

X波段高功率宽带选模定向耦合器

过模圆波导在提高功率容量的同时,不可避免地会造成微波源中同时存在多种模式。为了监测X波段长脉冲高功率微波源TM₀₁模的输出功率和频谱,采用CST软件仿真设计了X波段高功率宽带选模定向耦合器,在耦合TM₀₁模的同时可实现对TM₀₂和TE₁₁模的抑制。波导腔体及耦合孔的尺寸以小孔耦合理论和相位叠加原理为基础并结合切比雪夫分布函数计算确定。仿真结果表明：该高功率宽带选模定向耦合器在9.0~9.8 GHz的带宽范围内,耦合度为(-59.08±1) dB,定向性大于30 dB,对TE₁₁模的抑制度大于15 dB,对TM₀₂模的抑制度大于30 dB,功率容量大于2.5 GW。     

高功率光纤端帽实现6 kW激光输出

高功率光纤端帽是kW级光纤激光器必不可少的器件,而实现光纤端帽的低损耗高强度熔接是其关键技术。由于光纤和大尺寸光纤端帽在直径上的巨大差异,二者的熔接不能通过传统熔接机实现。设计并搭建了光纤端帽熔接系统,掌握了多种尺寸的光纤端帽的熔接工艺,成功用于光纤激光器及光纤合束器的高功率输出。实验上利用单模光端帽实现了3.01 kW的激光输出,在未进行主动制冷的情况下温升为7 ℃/kW。利用多模光纤端帽实现了6.08 kW的激光输出,在未进行主动制冷的情况下温升为6 ℃/kW。     

X-band inverse class-F GaN internally-matched power amplifier

An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor(HEMT).The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency(PAE),which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.     

X波段高功率微波选模定向耦合器

高功率、长脉冲是高功率微波技术发展的趋势,提高微波器件的功率容量成为一项重要的任务,使用过模器件可以有效提高微波源的功率容量,然而却会带来微波源中同时存在多种模式的问题。为了识别一个X波段长脉冲过模高功率微波源的输出主模TM01模式,设计了一种在线选模定向耦合器,进行了理论分析和模拟优化设计。当频率范围为9.2~9.6 GHz时,模拟结果显示该选模耦合器对TM01模的耦合度为-54 dB,在400 MHz带宽内定向性大于35 dB,对TM02模的抑制度大于15 dB,功率容量可达到3 GW以上。     

X波段高功率微波选模定向耦合器

高功率、长脉冲是高功率微波技术发展的趋势,提高微波器件的功率容量成为一项重要的任务,使用过模器件可以有效提高微波源的功率容量,然而却会带来微波源中同时存在多种模式的问题。为了识别一个X波段长脉冲过模高功率微波源的输出主模TM01模式,设计了一种在线选模定向耦合器,进行了理论分析和模拟优化设计。当频率范围为9.2~9.6 GHz时,模拟结果显示该选模耦合器对TM01模的耦合度为-54 dB,在400 MHz带宽内定向性大于35 dB,对TM02模的抑制度大于15 dB,功率容量可达到3 GW以上。     

X波段大功率耦合腔行波管3维粒子模拟

为提高行波管的增益和输出波形的稳定性,开展了带高频切断X波段大功率耦合腔行波管的研究工作。以点频7.2 GHz为例,对X波段耦合腔行波管的大信号注波互作用过程进行了3维粒子模拟,该行波管包含一处高频切断及两处微波集中衰减器。数值模拟结果表明：行波管腔数为40、电子束电压为17 kV、电流为0.8 A时,可获得2.0 kW的微波输出功率,增益达23 dB,电子效率达14.7%。     

X波段相对论速调管放大器同轴双间隙输出腔输出特性

设计了工作在X波段的相对论速调管放大器同轴双间隙输出结构,并采用3维PIC程序对其进行了粒子模拟,分析了输出微波功率随直流渡越角、输出腔品质因数值等相关参数的变化,对输出腔体结构进行了优化设计。模拟结果表明：同轴双间隙输出结构可以降低束流的势能,增加束流与腔体的作用时间,提高速调管的微波提取效率。模拟中采用束压600 kV、束流5 kA、调制深度100%和峰值频率9.37 GHz的电子束以及1T的轴向引导磁场强度,得到了周期平均功率1.2 GW、峰值频率9.37 GHz、效率40%的微波输出。     

X波段相对论速调管放大器同轴双间隙输出腔输出特性

 设计了工作在X波段的相对论速调管放大器同轴双间隙输出结构,并采用3维PIC程序对其进行了粒子模拟,分析了输出微波功率随直流渡越角、输出腔品质因数值等相关参数的变化,对输出腔体结构进行了优化设计。模拟结果表明：同轴双间隙输出结构可以降低束流的势能,增加束流与腔体的作用时间,提高速调管的微波提取效率。模拟中采用束压600 kV、束流5 kA、调制深度100%和峰值频率9.37 GHz的电子束以及1T的轴向引导磁场强度,得到了周期平均功率1.2 GW、峰值频率9.37 GHz、效率40%的微波输出。     

X波段馈源输出窗高功率微波击穿实验装置

为了开展高功率微波(HPM)馈源输出窗介质击穿实验研究,设计了一种组合型X波段高功率微波(HPM)喇叭馈源击穿实验装置。装置采用变张角喇叭与可移动介质输出窗组合的结构,通过调节变张角喇叭口面与输出窗间的距离,使得介质输出窗内表面电场强度可调。数值模拟结果表明:在满足馈源喇叭驻波比小于1.15,E面和H面基本等化的情况下,当调节变张角喇叭口面与介质输出窗距离在0~400 mm范围内变化时,HPM馈源输出窗上的电场强度变化为32.6~87.0 kV.cm-1,满足了在真空度3×10-3Pa、脉冲宽度20 ns条件下,HPM介质击穿对电场强度变化的要求。根据数值模拟结果,设计加工了HPM介质击穿实验装置,并成功地应用于GW级HPM馈源输出窗介质击穿实验研究。     

X波段馈源输出窗高功率微波击穿实验装置

为了开展高功率微波(HPM)馈源输出窗介质击穿实验研究,设计了一种组合型X波段高功率微波（HPM）喇叭馈源击穿实验装置。装置采用变张角喇叭与可移动介质输出窗组合的结构,通过调节变张角喇叭口面与输出窗间的距离,使得介质输出窗内表面电场强度可调。数值模拟结果表明：在满足馈源喇叭驻波比小于1.15,E面和H面基本等化的情况下,当调节变张角喇叭口面与介质输出窗距离在0～400 mm范围内变化时,HPM馈源输出窗上的电场强度变化为32.6~87.0 kV·cm-1,满足了在真空度3×10-3 Pa、脉冲宽度20 ns条件下,HPM介质击穿对电场强度变化的要求。根据数值模拟结果,设计加工了HPM介质击穿实验装置,并成功地应用于GW级HPM馈源输出窗介质击穿实验研究。