太赫兹波段液晶分子极化率的理论研究

近年来,太赫兹(THz)波段电磁辐射的研究引起科学技术界广泛的关注.液晶(LC)材料具有宽带可调的特性且拥有成熟的工业技术基础,在基于液晶设计的太赫兹可调器件研究中显示了巨大的应用潜力.因此,为了快速发展实用的LC-THz调制器件,对液晶材料在太赫兹频率范围内的光电特性进行系统的了解是至关重要的.分子极化率是表征分子中电荷分布的重要物理量.采用密度泛函理论方法对液晶分子PCH5,5CB和5OCB在太赫兹波段的极化率性质进行计算研究,从电子结构的角度,利用极化率密度分析方法考察了分子不同区域对极化率数值的贡献,详细探讨了尾链、核心结构和极性取代基等不同基团对极化率及其各向异性的影响.     

Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs

The thermally stimulated excitation of radiative modes of surface plasmon–phonon polaritons in GaAs followed by the high-power terahertz (THz) radiation selective emission is studied and experimentally observed. The selective high-power THz radiation emitters in the 7–8 and 10–15 THz frequency ranges based on the heated highly doped (n>5?10¹⁷ cm^?3) GaAs plates are proposed.     

Terahertz (THz) Frequency Sources and Antennas - A Brief Review

In this paper we review THz radiation properties, generation methods, and antenna configurations. This paper suggests some new class of antennas that can be used at THz frequency, like optical antennas or Carbon nanotube antennas. THz technology has become attractive due to the low energy content and nonionizing nature of the signal. This property makes them suitable for imaging and sensing applications. But at the same time detection and generation of THz signals has been technologically challenging. This paper presents a comparative study of the generation techniques for THz frequency signals giving emphasis to the some new techniques like Quantum Cascade lasers which has created significant research interest. The main aim for this study is to find out the materials suitable for fabricating THz devices and antennas, a suitable method for generation of high power at THz frequency and an antenna that will make THz communication possible.     

棕树叶的形貌、成分及光谱特性研究

利用傅里叶红外光谱仪-衰减全反射技术对不同棕树叶的太赫兹光谱进行了测量, 利用扫描电子显微镜及中红外光谱表征了样品的物理形貌与化学成分. 给出了叶绿素及类胡萝卜素的太赫兹指纹谱峰, 发现植物叶子的化学成分对光学响应的影响强于其物理形貌的影响. 在棕树叶的主要化学成分中, 叶绿素的太赫兹响应强于类胡萝卜素. 提出了植物光学研究以及太赫兹有机敏感材料研究的新方法, 获得了一些重要结果. 研究结果不仅有助于人们更加深入地了解植物的一些生理行为, 并可以从中得到启发, 为设计性能更高、针对性更强、应用更广的器件功能材料创造条件, 推动理论及应用研究的发展.     

ZnO-based terahertz quantum cascade lasers

High-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm^?1 @ 2.18 THz to 300 cm^?1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.     

NOVEL TERAHERTZ PHOTOCONDUCTIVE ANTENNAS

The photoconductive (PC) antenna is a key device for the recent terahertz (THz) photonics based on laser-pumped generation and detection of THz radiation. In this paper we report on two new types of PC antennas: the Schottky PC antenna and the multi-contacts PC antenna. The former one is able to detect THz radiation intensity without the time-delay scan and useful for applications where spectroscopic information is not important, such as the THz intensity imaging. The latter one is useful for the polarization sensitive THz spectroscopy, such as the THz ellipsometry. The characteristic features of these new types of PC antennas are studied by using a THz time-domain spectroscopy system.     

Intense Terahertz Pulses from SLAC Linac Beams

The terahertz (THz) region of the electromagnetic spectrum spans frequencies roughly from 300 GHz to 20 THz, corresponding to wavelengths from 1 mm to 15 μm. Although this range overlaps the vibrational levels of many materials (for example, phonon modes of semiconductors), difficulties in developing adequate sources have slowed its exploitation, despite promising applications in imaging, chemistry, biology, and materials science. Recent progress in sources driven by both lasers and electron beams has started to fill this “terahertz gap.” Accelerator-based sources are now opening a new high-field regime with the potential to control materials with THz radiation by resonantly driving bonds, biasing a material with ultrashort electric or magnetic fields, or using the light as a catalyst. Some new sources can produce pulsed fields of sufficient intensity to drive nonlinear responses in matter.     

太赫兹量子级联激光器研究进展

太赫兹技术涉及电磁学、光电子学、半导体物理学、材料科学以及微加工技术等多个学科，它在信息科学、生物学、医学、天文学、环境科学等领域有重要的应用价值．太赫兹辐射源是太赫兹频段应用的关键器件．本文简要介绍了太赫兹电磁波的研究背景、重要特点以及潜在应用，重点讨论了太赫兹半导体量子级联激光器的工作原理和研究进展等．     

THz技术在农产品/食品品质检测中的应用

农产品/食品的质量和品质问题越来越受人们关注。探索实际可行的农产品/食品的无损检测与品质评估技术正在成为研究热点。太赫兹(THz)辐射是位于中红外和微波波段之间的一段电磁波,具有非常重要的科学研究和应用价值。长期以来由于缺乏可行的THz波产生方法与探测手段,该波段相关领域的研究滞缓。THz光谱传感和成像技术是THz波的两个主要应用技术。THz光谱检测技术作为一种新型检测技术能够获得传统检测无法获得的信息。近十几年来,THz波用于来研究固、液、气相等各种物质的光电特性、分子内部振动和组成信息,在生物分析、医疗诊断、安全检测、环境控制等领域,THz技术显示出广阔的应用前景。文章介绍了THz波的主要性质、THz波检测技术的特点,论述了THz技术在农产品、食品质量与品质检测中的最新进展及其应用的潜力。     

Field effect transistors for terahertz detection - silicon versus III–V material issue

Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III–V GaAs and GaN HEMTs and silicon MOSFETs.     

Surface/interface issues in THz electronics

Basic THz elements are produced by standard semiconductor science and technology. Therefore, three main material systems are used. These are first of all semiconductors, for active and passive layer formation; metals, for interconnect and contact formation; and insulators, for passivation and isolation purposes. Additionally, these materials are structured in order to produce a device with desired dimensions and characteristics. Semiconductor surfaces, in particular suffer considerable changes during technological processing. Thus, surface and interface issues are essential here to be considered. Semiconductor–dielectric, semiconductor–metal, and semiconductor–semiconductor interfaces as well as surface effects for the case of GaAs are discussed in detail from the point of view of Schottky diodes and heterostructure-based devices for THz applications.     

Generation of Terahertz radiation with two color semiconductor lasers

We discuss and analyze concepts for the generation of tuneable continuous wave terahertz (THz) radiation with two color diode lasers. First, different geometries of two color lasers are reviewed. We show that the THz power of two color lasers in combination with external photomixers becomes sufficient for scanning THz imaging applications when optical amplification with a tapered amplifier is implemented. Then, the concept of direct emission of THz radiation out of a two‐color semiconductor laser is reviewed and the potential of this concept with respect to THz bandwidth and achievable THz power is critically analyzed.     

A portable high-pressure stress cell based on the V7 Paris–Edinburgh apparatus

We describe a new device, based on a V7 Paris–Edinburgh press, for torsional testing of material at pressures up to 7 GPa (extendable to 15 GPa). Samples are deformed using a simple shear geometry between opposed anvils by rotating the lower anvil, via a rotational actuator, with respect to an upper, stationary, anvil. Use of conical anvil profiles greatly increases sample dimensions more than other high-pressure torsional apparatus did. Samples of polycrystalline Zr (2 mm thick, 3.5 mm diameter) have been sheared at strains exceeding γ ～1.5 at constant strain rate and at pressures from 1.8 to 5 GPa, and textural development has been studied by electron microscopy. Use of amorphous-boron-epoxy gaskets means that nearly simple shear of samples can be routinely achieved. This apparatus allows study of the plastic and anelastic behaviour of materials under high pressure, and is particularly suited for performing in situ investigations using synchrotron or neutron radiation.     

Fundamentals of Multiferroic Materials and Their Possible Applications

Materials science is recognized as one of the main factors driving development and economic growth. Since the silicon industrial revolution of the 1950s, research and developments in materials and solid state science have radically impacted and transformed our society by enabling the emergence of the computer technologies, wireless communications, Internet, digital data storage, and widespread consumer electronics. Today's emergent topics in solid state physics, such as nano-materials, graphene and carbon nano-tubes, smart and advanced functional materials, spintronic materials, bio-materials, and multiferroic materials, promise to deliver a new wave of technological advances and economic impact, comparable to the silicon industrial revolution of the 1950s.

The surge of interest in multiferroic materials over the past 15 years has been driven by their fascinating physical properties and huge potential for technological applications. This article addresses some of the fundamental aspects of solid-state multiferroic materials, followed by the detailed presentation of the latest and most interesting proposed applications of these multifunctional solid-state compounds. The applications presented here are critically discussed in the context of the state-of-the-art and current scientific challenges. They are highly interdisciplinary covering a wide range of topics and technologies including sensors, microwave devices, energy harvesting, photo-voltaic technologies, solid-state refrigeration, data storage recording technologies, and random access multi-state memories. According to their potential and expected impact, it is estimated that multiferroic technologies could soon reach multibillion US dollar market value.     

Tunable,dual-wavelength interferometrically coupled continuous-wave parametric source

Generation of dual-wavelength continuous-wave (cw) radiation with independent and arbitrarily tuning, and indefinitely close spacing, using two cw optical parametric oscillators (OPOs) coupled with an anti-resonant ring interferometer is reported. The singly resonant OPOs, based on identical 30-mm-long MgO:sPPLT crystals, are pumped by a single cw laser at 532 nm. Two pairs of signal and idler wavelengths can be independently and arbitrarily tuned, with each signal (idler) pair tuned through degeneracy and beyond. Frequency separation between two distinct resonant signal waves from 7 down to 0.8 THz is demonstrated, and their overlap at 951 nm providing a frequency difference as small as ~220 MHz is shown. The OPOs independently provide a signal (idler) wavelength coverage across 870–1,000 nm (1,040–1,370 nm) and simultaneously generate idler powers of >1 W.     

Multiferroic RMnO3 thin films

Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO₃ perovskites are central to this progress, providing a suitable platform to tailor spin–spin and spin–lattice interactions.With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO₃ epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments.     

Potassium Titanyl Phosphate and Its Isomorphs: Growth,Properties, and Applications

Potassium titanyl phosphate (KTP) and its isomorphs have received enormous attention in the last 2 decades. In particular, KTP assumes importance due to its large nonlinear optic and electrooptic coefficients together with the broad thermal and angular acceptance for second harmonic generation. This article provides an overview of the material aspects, structural, physical, and chemical properties and device feasibility of the KTP family of crystals. Some of the current areas of research and development along with their significance in understanding the physical properties as well as device applications are addressed. Optical waveguide fabrication processes and characteristics with their relevance to the present-day technology are highlighted. Studies performed so far have enabled us to understand the fundamental aspects of these materials and what needs to be pursued vigorously is the exploitation of their device applications to the maximum extent.     

Ion beam induced surface and interface engineering

The injection of material into a target specimen in the form of an accelerated ion beam offers a most valuable tool for altering its physical, chemical, structural, surface and interface properties in a controlled manner and tailoring new materials for basic and applied research for science and technology. The present review describes experimental, theoretical and recent aspects of ion beam modifications at various solids, thin films, and multilayered systems covering wider energy ranges including the older basic concepts which are now of interest. These results reveal that the ion–solid interaction physics provides a unique way for controlling the produced defects of the desired type at a desired location. These interests have been stimulated by the possibilities of synthesizing novel materials with potential applications in the field of thin films, surfaces and interface science. Many applications of ion induced engineering are being developed for various sciences of high technological interest for future aspects.     

Advances in Functional Nanomaterials Science

Technologies employing nanomaterials, such as electronics, optoelectronics, nanobiotechnologies, quantum optics, and nanophotonics, are perceived as the key drivers of investigations on novel and functional materials and their nanostructures for various applications. It is well understood that the study of such materials and structures has been of great importance for the optimization and development of electrical and optical devices. From such devices, one does not only expect higher efficiencies, but also access to the development of completely new concepts, which are strongly demanded by modern information-processing, quantum, or medical technologies, and sensing applications. In this context, a wide range of aspects such as the physics of novel materials, as well as materials engineering, characterization, and applications are summarized here. Novel materials, which can be used, for instance, for energy harvesting or light generation, as well as for future logic devices; material engineering, which can lead to improved device functionality and performance in optoelectronics; material physics, the study of which allows insight to be gained into optical and electrical properties of nanostructured systems and quantum materials; and technologies/devices, addressing progress on the application side of sophisticated material systems and quantum structures, are highlighted using representative examples.     

太赫兹液晶材料与器件研究进展

液晶是一种性能优异的可调控光电功能材料,基于液晶的太赫兹器件有着广泛的应用前景,但高性能太赫兹功能器件的研发仍处于初级阶段.本文综述了太赫兹领域液晶材料与器件的研究现状,探讨了液晶技术与太赫兹技术相结合的发展趋势.