High-performance midwavelength infrared detectors based on InAsSb nBn design

we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ～ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.     

Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling

The paper reports on the barrier mid-wave infrared InAs/InAsSb (x_Sb = 0.4) type-II superlattice detector operating below thermoelectrical cooling. AlAsSb with Sb composition, x_Sb = 0.97; barrier doping, N_D < 2×10¹⁶ cm^?3 leading to valence band offset below 100 meV in relation to the active layer doping, N_D = 5×10¹⁵ cm^?3 was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures. The detectivity of the simulated structure was assessed at the level of ～ 10¹¹ Jones at T ～ 100 K assuming absorber thickness, d = 3 μm. The detector’s architecture for high frequency response operation, τ_s = 420 ps (T ～ 77 K) was presented with a reduced active layer of d = 1 μm.     

机载轻小型中波红外连续变焦系统设计

针对制冷型320256凝视焦平面阵列探测器,设计了一套4倍中波红外连续变焦光学系统,用于轻型机载光电探测和跟踪吊舱设备。该系统由变焦物镜系统、二次成像系统和2个反射镜构成,为了避免非球面的加工及检测误差影响,本系统只使用球面。设计结果表明,系统实现了37.5 mm～150 mm的连续变焦,工作波长范围为3.7 m～4.8 m,F数为4,满足100%冷光阑效率,系统在探测器的Nyquist频率16 lp/mm处,所有焦距位置和视场的MTF均大于0.55,接近系统的衍射极限。该变焦系统总长280 mm,质量仅为110 g,具有体积小、质量轻、分辨率高、变焦轨迹简单等优点。     

激光与中波红外双波段光学系统设计

根据系统要求,进行激光与中波红外复合制导光学系统设计。该系统红外工作波长为3 m~5 m,激光工作波长为1.064 m,系统接收口径为250 mm,F数为1.4,要求MTF在33 lp/mm时大于0.4,光学透过率大于60%,使用的红外焦平面阵列像元数为640像素512像素,像元尺寸为15 m15 m。因为系统具有大孔径,小F数的特点,因此选择使用折反射式结构进行二次成像,并进行消热差处理。     

Application of GaAs/GaAlAs multiple-quantum-well infrared detector array in the infrared imaging camera

A long-wavelength ( _p =7.7m) infrared imaging camera that uses a GaAs/GaAlAs multiple-quantum-well infrared photo-detector array is presented. A good infrared image of a group of buildings and trees is demonstrated.     

红外探测器封装技术

探讨了目前红外探测器的封装工艺,对红外探测器的机械连接、电连接、窗口气密性焊接、引线盘工艺、表面处理工艺这几个关键工艺技术进行了比较深入细致的分析,总结了影响探测器正常工作的主要因素。     

Design and modelling of high-operating temperature MWIR HgCdTe nBn detector with n- and p-type barriers

The paper present the numerical analysis of the electrical and optical properties of the mid-wave infrared (MWIR) HgCdTe nBn type detectors with a 3.4 μm cut-off wavelength (at 50% of the initial rise in the response) operating at 230 K. The analysed n⁺/B/n/N⁺ structure consists of four HgCdTe layers with n- and p-type barriers. Different structural parameters, as well as compositional and dopant profiles obtained in molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD) techniques were modelled with emphasis on conduction band and valence band-offset which determines the proper construction of the nBn type devices. The barrier must prevent the flow of the electron current from the cap region to the absorber while simultaneously ensure the flow and collection of thermally and optically generated holes from the absorber to the cap region. It was shown that proper p-type doping of the barrier reduce the valence band-offset and increase the offset in the conduction band leading to the optimal detector architecture.Theoretical results were related to the experimental data of the MWIR n⁺/B/n/N⁺ photodetectors grown by MOCVD. Dark currents of the first fabricated devices are limited by undesirable iodine diffusion from cap layer to the barrier. However, the nBn architecture might be a promising solution for HgCdTe infrared detectors grown by MOCVD, mainly due to the possibility of in situ acceptor doping of the barrier.     

Performance of mid-wave T2SL detectors with heterojunction barriers

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10⁻⁶ A/cm² at −0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p–i–n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.     

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Here in this paper,we report a room-temperature operating infrared photodetector based on the interband transition of an In As Sb/Ga Sb quantum well.The interband transition energy of 5-nm thick In As_(0.91)Sb_(0.09) embedded in the Ga Sb barrier is calculated to be 0.53 e V(2.35μm),which makes the absorption range of In As Sb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum.The fabricated photodetector exhibits a narrow response range from 2.0μm to 2.3μm with a peak around 2.1μm at 300 K.The peak responsivity is 0.4 A/W under-500-m Vapplied bias voltage,corresponding to a peak quantum efficiency of 23.8%in the case without any anti-reflection coating.At 300 K,the photodetector exhibits a dark current density of 6.05×10~(-3)A/cm~2under-400-m V applied bias voltage and3.25×10~(-5)A/cm~2under zero,separately.The peak detectivity is 6.91×10~(10)cm·Hz~(1/2)/W under zero bias voltage at 300 K.     

Evaluation of a PbTe detector for infrared imaging purposes

Summary An infra-red detector produced by the Elettronica SPA Company for the European Space Agency to be used in the Earth surface mapping from aircraft has been tested in our laboratory. We present the characteristics of the detector working in the spectral range (1÷2.5) μm. The acquisition system and the electronics are discussed and a detailed study of all the noise sources is presented; the measured NEP is 3.2·10⁻¹⁴W Hz^−1/2 at a temperature of 108 K. Paper presented at the V Cosmic Physics National Conference, S. Miniato, November 27–30, 1990.     

Development of an infrared detector: Quantum well infrared photodetector

The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented. Supported by the National Natural Science Foundation of China (Grant Nos. 10474020, 10734090, and 60221502) and the Key Program of Basic Research of China (Grant No. 2004CB619004)     

Application of the nitroanisole as an infrared detector used in middle infrared interferometer

We propose the application of nitroanisole as a detector for middle infrared (mid-IR) interferometry or holography. The present experiment utilizes the liquid form of nitroanisole, which has a thermal lens effect, i.e. a temperature dependent refractive index. Since the nitroanisole absorbs IR radiation as heat, it is possible to estimate the IR intensity distribution on the nitroanisole from the diffraction pattern made by visible laser light that is transmitted through the nitroanisole. In this study, the time resolution and the diffraction efficiency of the nitroanisole was measured under various conditions. The experimental results show that the nitroanisole has a time resolution as high as that of a standard video camera, as well as a high diffraction efficiency and the spatial resolution equivalent to that of a conventional IR camera. Furthermore, we confirmed that the phase shift in mid-IR region can be estimated by analyzing the change in the visible diffraction pattern.     

Performance improvements of ultraviolet/infrared dual-band detectors

Results are reported on dual-band detectors based on a GaN/AlGaN structure operating in both the ultraviolet–midinfrared (UV–MIR) and ultraviolet–farinfrared (UV–FIR) regions. The UV detection is due to an interband process, while the MIR/FIR detection is from free carrier absorption in the emitter/contact followed by internal photoemission over the barrier at the GaN/AlGaN interface. The UV detection, which was observed from 300 K to 4.2 K, has a threshold of 360 nm with a peak responsivity of 0.6 mA/W at 300 K. The detector shows a free carrier IR response in the 3–7 μm range up to 120 K, and an impurity response around 54 μm up to 30 K. A response in the range 7–13 μm, which is tentatively assigned to transitions from C impurities and N vacancies in the barrier region, was also observed. It should also be possible to develop a detector operating in the UV–visible–IR regions by choosing the appropriate material system. A dual-band detector design, which allows not only to measure the two components of the photocurrent generated by UV and IR radiation simultaneously but also to optimize the UV and IR responses independently, is proposed.     

Optimization of a non-cryogenic quantum infrared detector

A study of the optimization of the detectivity of a mid-infrared double heterostructure photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and provide a physical insight into the mechanisms dominating the dark current. The analysis is performed step by step, from a simple p–n junction to the full double heterostructure. The influence of temperature, barrier band gap energy in a double heterostructure, doping density in the active region, on diffusion and generation–recombination mechanisms is analyzed. It is finally shown how the performances of a double heterostructure photovoltaic detector can be improved by controlled doping of the active region.     

红外探测器成像实验研究

红外探测器广泛应用于多光谱成像系统中,文章提出并建立了一种红外线阵时间延迟积分探测器的成像实验系统,阐述了成像系统的工作原理,对影响成像质量的两个主要因素电子稳像与自动对焦进行了深入分析。利用高精度直流测速机确定了转台转速与探测器的行转移频率,采用卡尔曼滤波算法滤除了测速机带来的噪声,提高了速度匹配精度。在分析比较红外相机四种检焦方法的基础上采用视频信号幅度法进行检调焦。在国家光学机械产品质量监督检验测试中心实地搭建了成像实验系统,并分别对5.3,6.4和9.2mm宽度靶标成像。实验结果表明,采集到的原始靶标纹理清晰,照相分辨率达到了每毫米11.3对线,达到了实验预期目的。     

Performance of GLD detector

Most of the important physics processes to be studied in the international linear collider (ILC) experiment have multi-jets in the final state. In order to achieve better jet energy resolution, the so-called particle flow algorithm (PFA) will be employed and there is a general consensus that PFA derives overall ILC detector design. Four detector concepts for the ILC experiment have been proposed so far in the world; the GLD detector that has a large inner calorimeter radius, which is considered to have an advantage for a PFA, is one of them. In this paper, general scheme and performance of the GLD-PFA will be presented.      

A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

AlGaAsSb/AlAsSb Bragg mirrors lattice matched on InP with six pairs of layers were grown by molecular beam epitaxy. The effect of Te doping on the electrical and optical properties of the Bragg mirrors, and the presence of digital alloy gradient layers between the ternary and quaternary layers are analysed. The presence of digital alloy layers at the interfaces reduces the electrical resistance through the perpendicular direction of the Bragg mirror, without significantly affecting the reflectivity.     

Refractive index of high-carrier-doped InGaAs/AlAsSb coupled double quantum wells

The carrier density dependence of the refractive index of Si-doped InGaAs/AlAsSb coupled double quantum wells (CDQWs) was studied. The refractive index of the CDQWs changed due to two effects that arose from: (1) a change in the optical absorption and (2) the carrier plasma effect. The refractive index changes due to these two effects were separately evaluated by experimental methods and found to agree well with reference values obtained by a prism coupling technique. By considering the carrier density dependence of the refractive index of the CDQWs and the fundamental requirements for practical devices, we found that the carrier density of the CDQWs should be low with sufficient optical absorption strength due to intersubband transitions