掺Er/Er+O的GaN薄膜光学性质的研究

利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模，并讨论了共注入O对Er离子发光的影响. 在Raman散射谱中，对于注Er的GaN样品出现了300 cm^-1和670 cm^-1两个新的Raman峰，而对于Er+O共注样品，除了上述两个峰外，在360 cm^-1处出现了另外一个新的峰，其中300 cm^-1峰可以用disorder-activated Raman scattering (DARS)来解释，670 cm^-1峰是由于与N空位相关的缺陷引起的，而360 cm^-1峰是由O注入引起的缺陷络合物产生的. 由于360 cm^-1模的缺陷出现，从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降. 关键词： GaN Er Raman散射 光致发光     

氧离子注入微晶金刚石薄膜的微结构与光电性能研究

本文系统研究了氧离子注入剂量和退火温度对含有Si-V发光中 心的微晶金刚石薄膜的微结构和光电性能的影响. 结果表明, 氧离子注入并在较高温度退火有利于提高薄膜中Si-V中心的发光强度. 当氧离子注入剂量从10¹⁴ cm^-2增加到10¹⁵ cm^-2时, 薄膜中Si-V发光强度增强. Hall效应测试结果表明退火后薄膜的面电阻率降低. 不同温度退火时, 氧离子注入薄膜的Si-V发光强度较强时, 薄膜的面电阻率增加, 说明Si-V发光中心不利于提高薄膜的导电性能. Raman光谱测试结果表明, 薄膜中缺陷数量的增多会增强Si-V的发光强度, 而降低薄膜的导电性能. 关键词： 金刚石薄膜 氧离子注入 电学性能 Si-V缺陷     

离子注入n型GaN光致发光谱中宽黄光发射带研究

利用离子注入方法和光致发光技术系统研究了注入离子对n型GaN宽黄光发射带的影响.实验采用的注入离子为：N，O，Mg，Si和Ga，剂量分别为10¹³，10¹⁴，10¹⁵和10¹⁶/cm²，注入温度为室温.注入后的样品在900 ℃流动氮气环境下进行热退火，退火时间为10 min，并对退火前后的样品分别进行室温光致发光测量.通过实验数据的分析，独立提出了提取注入离子对晶体黄光发光特性影响的半经验模型.利用该模型导出的公式，可以确定注入的N，O，Ga，Mg和Si离子对黄光发射带的影响随注入剂量的变化关系以及该影响的相对强弱. 关键词： 氮化镓 光致发光谱 离子注入     

Ag离子注入非晶SiO2的光学吸收、拉曼谱和透射电镜研究

能量为200keV的Ag离子，以1×10¹⁶，5×10¹⁶，1×10¹⁷ cm^-2的剂量分别注入到非晶SiO₂玻璃，光学吸收谱显示：注入剂量为1×10¹⁶ cm^-2的样品的光吸收谱为洛伦兹曲线，与Mie理论模拟的曲线形状一致；注入剂量较大的5×10¹⁶，1×10¹⁷ cm^-2的谱线共振吸收增强，峰位红移并出现伴峰. 透射电镜观察分析表明，注入剂量不同的样品中形成的纳米颗粒的大小、形状、分布都不同，注入剂量较大的还会产生明显的表面溅射效应，这些因素都会影响共振吸收的峰形、峰位和峰强. 当注入剂量达到1×10¹⁷ cm^-2时，Ag纳米颗粒内部可能还形成了杂质团簇. 关键词： 离子注入 纳米颗粒 共振吸收 红移     

白云鄂博变生褐钇铌矿的Raman光谱和光致发光谱

测定了白云鄂博变生及退火结晶的褐钇铌矿和褐铈铌矿的Raman光谱，并讨论了结构、成分对Raman光谱的影响.它们的Raman光谱出现在840—600，340—280及200—50cm^-1的三个区，前两者为NbO^3-₄四面体的伸缩振动和弯曲振动频率，后者为稀土离子和NbO^3-₄四面体的外振动模式，通过对褐钇铌矿族矿物Raman光谱的比较分析，表明aman光谱可以有效地反映出该类矿物的结构畸变.还发现 关键词：     

N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究

采用射频磁控溅射法在富氧环境下制备ZnO薄膜, 继而结合N离子注入及热退火实现薄膜的N掺杂及p 型转变, 借助霍尔测试和拉曼光谱研究了N离子注入富氧ZnO薄膜的p型导电及拉曼特性. 结果表明, 在 600 ℃温度下退火120 min可获得性能较优的p-ZnO: N薄膜, 其空穴浓度约为2.527×10¹⁷ cm^-3. N离子注入ZnO引入了三个附加拉曼振动模, 分别位于274.2, 506.7和640.4 cm^-1. 结合电学及拉曼光谱的分析发现, 退火过程中施主缺陷与N受主之间的相互作用对p-ZnO的形成产生重要影响.     

C60薄膜的离子注入损伤研究

在200 keV重离子加速器上，用120—360 keV的H,N,Ar和Mo离子注入C₆₀薄膜．对注入后薄膜的拉曼谱进行了分析．结果表明，不同离子注入C₆₀薄膜后，C₆₀的1469 cm^-1特征峰随注入剂量的增加均呈指数式下降，同时在1300—1700 cm^-1范围出现非晶碳峰，并逐渐增强，最终完全非晶化．而且1469 cm^-1拉曼峰的强度及C₆₀薄膜完全非晶化所对应的剂量与注入离子的种类和能量有关．进一步的分析表明，C₆₀分子的损伤主要是由注入离子的核能量转移所造成，与电子能量转移无关．H离子注入C₆₀薄膜后，1469 cm^-1处特征拉曼峰向短波方向非对称展宽，这可能是注入的H离子通过电子能量转移使C₆₀分子发生聚合的结果. 关键词：     

KTN晶体及其熔体结构的高温拉曼光谱研究

测量并研究了不同温度(室温—1573 K)范围内KTN晶体的拉曼光谱及其熔体的高温拉曼光谱,分析了KTN晶体结构随温度变化的规律及其熔体的结构特征.随着温度的升高,KTN晶体的拉曼光谱谱峰都不同程度地向低波数方向移动,同时存在不同程度的展宽,并伴随强度的减弱.观察并解释了温度353 K附近KTN晶体样品的四方—立方转相现象.研究了KTN晶体拉曼光谱中538cm^-1,585cm^-1,835cm^-1和877cm^-1谱峰及其 关键词： 高温拉曼光谱 熔体 KTN晶体     

Mn离子注入InAs/GaAs量子点结构材料的光电性质研究

用高能离子注入(160keV)的方法对InAs/GaAs量子点结构进行掺杂，研究了不同退火工艺处理后量子点的光致发光和电学性能.相对于长时间退火，快速退火处理后的量子点发光通常较强.在相同的退火条件下，量子点发光峰位随着Mn注入剂量的增加，先是往高能量端快速移动，而后发光峰又往低能方向移动.后者可能是由于Mn原子进入InAs量子点，释放了InAs量子点中的应变所致.对于高注入剂量样品和长时间退火样品，变温电阻曲线在40 K附近会出现反常行为. 关键词： 离子注入 InAs/GaAs量子点 光致发光 团簇     

碳化硅中氦离子高温注入引入的缺陷及其退火行为的光谱研究

对氦（He）离子高温（600 K）注入6H-SiC中的辐照缺陷,在阶梯温度退火后演化行为的拉曼光谱和室温光致发光谱的特征进行了分析.这两种方法的实验结果表明,离子注入所产生晶格损伤的程度与注入剂量有关;高温退火导致损伤的恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复.在阶梯温度退火下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性.研究表明：高温（600 K）注入在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层 关键词： 6H-SiC 离子注入 拉曼光谱 光致发光谱     

Identification of Mn‐related Raman modes in Mn‐doped ZnO thin films

This article aims to investigate the Raman modes present in Mn‐doped ZnO thin films that are deposited using the magnetron co‐sputtering method. A broad band ranging from 500 to 590 cm⁻¹ is present in the Raman spectra of heavily Mn‐doped ZnO films. The multi‐peak‐fitting results show that this broad band may be composed of six peaks, and the peak at 528 cm⁻¹ could be a characteristic mode of Mn₂O₃. The results of this study suggest that the origin of the Raman peaks in Mn‐doped ZnO films may be due to three major types: structural disorder and morphological changes caused by the Mn dopant, Mn‐related oxides and intrinsic host‐lattice defects. Copyright © 2010 John Wiley & Sons, Ltd.     

Infrared spectra of paraelectric and ferroelectric CsH2PO4

ir spectra are reported for polycrystalline CsH₂PO₄ above and below the transformation temperature, 153 K. Three absorption bands at 1760 cm^-1 2350 cm^-1 and 2800 cm^-1 are assigned to -OHO- vibrations. Whilst the 2350 cm^-1 band remains essentially unaltered, the 1760 cm^-1 band splits into multiplets and the 2800 cm^-1 band shifts to lower frequency on cooling below 153 K. A broad band centred at 3240 cm^-1 is found to exist in the ferroelectric phase and is associated with the -OHO- mode involving the H(2) proton ordered below the transition.     

中性三甲胺双聚体的红外-真空紫外光谱研究

Infrared-vacuum ultraviolet (IR-VUV) spectra of neutral trimethylamine dimer were measured in the 2500-3800 cm^-1 region. Quantum chemical calculations were performed to identify the structure of the low-lying isomers and to assign the observed spectral features. The bands at 2975 and 2949 cm^-1 were assigned to the antisymmetric C-H stretching and the band at 2823 cm^-1 to the symmetric C-H stretching, respectively. The 2739 cm^-1 band was due to the CH₃ bending overtone, which disappeared at low IR laser power of 1 mJ/mm². The extra band at 2773 cm^-1 could be due to Fermi resonance behavior of the light isotopologue, these are often close in energy and can strongly mix through cubic terms in the potential function. Experimental and theoretical results indicate the likely coexistence of multiple structures. The peak widths of IR spectra of neutral trimethylamine dimer are not significantly affected by the structural transformation, allowing the stretching modes to be well resolved.     

Raman scattering studies on manganese ion-implanted GaN

This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm^-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm^-1 and 660 cm^-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm^-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A₁(LO) (733 cm^-1) and E^H₂ (566 cm^-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.     

Luminescence spectra of Mn(II) in different symmetries

Luminescence emission and excitation spectra of high-spin Mn(II) were studied in crystals with different site symmetries of the divalent ion. For cubic or uniaxial site symmtries only one emission band is observed with a maximum asymmetry of 20% and larger width on the low energy side. Lower site symmetries may result in spectra of considerable complexity. A second emission band of lower intensity near 14 000 cm^-1 was found in systems with hexa- as well as tetra-coordinated Mn(II). It evidently originates from the same Mn(II) that gives rise to the stronger emissions at higher energies. A qualitative explanation for its occurence on the basis of close-lying split components of the ⁴T₁(G) or ⁴T₂(G) states is presented. In two systems emission bands from higher excited states and shifts of emission maxima with excitation energy were observed. The shifts are explained on the basis of overlapping bands and variable intensity ratios for these unresolved components. The results indicate that the degree of distortion is more important for the occurrence of these complications than the actual site symmetry of Mn(II).     

Intensity measurements in the v4-fundamental of methane

The absolute intensities of all the J-multiplets between R(13) at 1375cm^-1 and P(12) at 1225 cm^-1, in the v₄-fundamental of ¹²CH₄, have been measured at 300°K. Our values are consistent with published band-intensity measurements and also with the theoretical line strength tabulation by Fox. Spectral transmittance computation using a Lorentz line shape with a hydrogen-broadened half-width of 0.075 cm^-1 atm^-1 at 300°K for all the lines in the band is in excellent agreement with our experimental data measured with a spectral resolution of 0.2 cm^-1. Our best estimate for the absolute intensity of the band is 145±8 cm^-2 atm^-1 at STP.     

Study of （Ga,Mn）N prepared by Mn-ion implantation using optical techniques

This paper reports that （Ga, Mn）N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraetion（XRD）. Detailed XRD measurements have revealed the characteristic of Mn-ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm-1 identified as EI（LO）, A1 （LO） and E~, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650 725, 363, 506cm^-1 and the vicinity of E~ mode. The modes observed at 182, 288, 650 725em 1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the （Ga, Mn）N, which are in fair agreement with the standard theoretical results.     

Chemisorption of carbon monoxide on platinum {111}: Reflection-absorption infrared spectroscopy

Reflection-adsorption infrared spectroscopy has been combined with thermal desorption and surface stoichiometry measurements to study the structure of CO chemisorbed on a {111}- oriented platinum ribbon under uhv conditions. Desorption spectra show a single peak at coverages > 10¹⁴ molecules cm^?2, with the desorption energy decreasing with increasing coverage up to 0.4 of a monolayer, and then remaining constant at ≈135 kJ mol^?1 until saturation. The “saturation” coverage at 300 K is 7 × 10¹⁴ molecules cm^?2, and no new low temperatures state is formed after adsorption at 120 K. Infrared spectra show a single very intense, sharp band over the spectral range investigated (1500 to 2100 cm^?1), which first appears at low coverages at 2065 cm^?1 and shifts continuously with increasing coverage to 2101 cm^?1 at 7 × 10¹⁴ molecules cm^?2. The halfwidth of the band at 2101 cm^?1 is 9.0 cm^?1, independent of temperature and only slightly dependent on coverage. The band intensity does not increase uniformly with increasing coverage, and hysteresis is observed between adsorption and desorption sequences in the variation of both the band intensity and frequency as a function of coverage. The frequency shift and the virtual invariance of the absorption band halfwidt with increasing coverage (Jespite recent LEED evidence for overlayer compression in this system) are attributed to strong dipole-dipole coupling in the overlayer.     

Photoluminescence of Mn doped epitaxial GaAs

We have measured the near band edge photoluminescence of Mn doped liquid phase epitaxially grown GaAs. The photoluminescence spectra at 2°K shows, at low excitation intensities, a structure of up to eight sharp peaks (widths .2 to 1.0 meV) between 1.517 and 1.512 eV, besides the lower energy bands near 1.41 eV due to the deep Mn acceptor level and the usual donor-acceptor bands around 1.47 eV. Attempts to relate the sharp lines to the Mn electronic states, introduced by doping, were unsuccessful. It is our belief that the presence of this particular impurity in our samples allows for whatever states are responsible for the sharp line structure, to reveal themselves in the emission spectrum. A most unespected result is that near band edge sharp line luminescence is observed for impurity concentration as high as 10¹⁸cm^-3.     

过渡族元素掺杂BaTiO3-Tb1-xDyxFe2-y层状复合材料中的磁电效应

用溶胶-凝胶法制备1.0%mol Mn,Cr,Co掺杂 BaTiO₃(BTO)粉体,在1350℃下烧结成多晶陶瓷样品.X射线衍射和差示扫描量热分析表明,室温下掺杂BaTiO₃具有四方钙钛矿结构;居里点和相变潜热随Cr,Mn,Co掺杂逐渐降低.将掺杂BaTiO₃与Tb_1-xDy_xFe_2-y(TDF)胶合制成双层磁电复合材料,并研究了Cr:BTO-TDF,Mn∶BTO-TDF,Co:BTO-TDF层状复合材料中的磁电效应.实验表明,在340×80 A·m^-1偏置磁场下, Cr:BTO-TDF的横向磁电电压系数达到最大值586 mV·cm^-1·(80 A·m^-1)^-1.在400×80 A·m^-1偏置磁场下,Mn∶BTO-TDF和Co:BTO-TDF的横向磁电电压系数的最大值分别为480 mV·cm^-1·(80 A·m^-1)^-1和445mV·cm^-1·(80 A·m^-1)^-1.研究表明掺杂BaTiO₃-TDF层状复合材料中具有较强的磁电耦合.作为无铅压电材料,掺杂BaTiO₃制备的磁电效应器件颇具应用前景. 关键词： 磁电效应 双层复合材料 3')" href="#">掺杂BaTiO₃ 1-xDy_xFe_2-y')" href="#">Tb_1-xDy_xFe_2-y