Spin-dependent transport in cluster-assembled nanostructures: influence of cluster size and matrix material

Spin-dependent transport in granular metallic nanostructures has been investigated by means of a thermoelectric measurement. Cobalt clusters of well-defined size (〈n〉 = 15-600) embedded in copper and silver matrices show magnetic field responses of up to several hundred percent at low temperature. The experimental observations are attributed to spin mixing. The influence of cluster size and matrix are discussed.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

Quantum simulations of spin-relaxation and transport in copper

A quantum equation of motion method is applied to simulate conduction electron spin-relaxation and transport in the presence of the spin-orbit interaction and disorder. A spin-relaxation time of 25ps is calculated for Cu with a realistic low temperature resistivity of 3.2 μΩ cm – corresponding to a spin-diffusion length of about 0.4 μm. Spin-relaxation in a finite nanocrystallite of Cu is also simulated and a short spin-relaxation time (0.47 ps) is calculated for a crystallite with 7% surface atoms. The spin-relaxation calculated for bulk Cu is in good agreement with experimental evidence, and the dramatic nanocrystallite effect observed has important implications for nano-spintronic devices.     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Influence of inter-dot Coulomb repulsion and exchange interactions on conductance through double quantum dot

Conductance and other physical quantities are calculated in double quantum dots (DQD) connected in series in the limit of coherent tunnelling using a Green's function technique. The inter-dot Coulomb repulsion and the exchange interaction are studied by means of the Kotliar and Ruckenstein slave-boson mean-field approach. The crossover from the atomic to the molecular limit is analyzed in order to show how the conductance in the model depends on the competition between the level broadening (dot-lead coupling) and the dot-dot transmission. The double Kondo effect was found in the gate voltage characteristics of the conductance in the atomic limit. In the case, when each dot accommodates one electron, the Kondo resonant states are formed between dots and their adjacent leads and transport is dominated by hopping between these two resonances. In the molecular limit the conductance vanishes for sufficiently low gate voltages, which means the Kondo effect disappeared. For small dot-lead coupling the transport characteristics are very sensitive on the influence of the inter-dot Coulomb repulsion and the position of the local energy level. The resonance region is widened with increase of the inter-dot Coulomb interactions while the exchange interaction has opposite influence.     

Transport properties of a single-quantum dot Aharonov-Bohm interferometer

We consider a two-terminal Aharonov-Bohm (AB) interferometer with a quantum dot inserted in one path of the AB ring. We investigate the transport properties of this system in and out of the Kondo regime. We utilize perturbation theory to calculate the electron self-energy of the quantum dot with respect to the intradot Coulomb interaction. We show the expression of the Kondo temperature as a function of the AB phase together with its dependence on other characteristics such as the linewidth of the ring and the finite Coulomb interaction and the energy levels of the quantum dot. The current oscillates periodically as a function of the AB phase. The amplitude of the current oscillation decreases with increasing Coulomb interaction. For a given temperature, the electron transport through the AB interferometer can be selected to be in or out of the Kondo regime by changing the magnetic flux threading perpendicular to the AB ring of the system.     

Theoretical imaging of current profiles in two-dimensional devices

This paper addresses in a concise and rigorous way the basic tools for the study of local longitudinal and transverse microscopic currents in two-dimensional devices. The emphasis is on the optimized use of the Keldysh nonequilibrium Green's function theory together with the tight-binding representation of the electronic system. We elaborate general analytic expressions of current profiles, useful for modeling and simulating the local site-to-site flow of carriers; furthermore, in broken time-reversal symmetry, the formalism discerns unambiguously persistent and transport contributions to the bond currents. Our approach achieves a workable theoretical imaging, resolved in space and energy, of the microscopic currents through mesoscopic devices.     

Spin pump effects on the spin current through two coupled quantum dots

We theoretically study the spin pump effects of the rotating magnetic field on the spin current through two coupled quantum dots. Owing to the interdot coupling, two molecular states with different bands can be formed, resulting asymmetric spin current peaks. The possibility of manipulating the spin current is explored by tuning the strength, the frequency, and the direction of the rotating magnetic field. The number and location of the spin current peaks can be controlled by making use of various tunings. Furthermore, the normal 2π period of the spin current with respect to the magnetic flux can be destroyed by the interdot coupling.     

Transport through a double barrier in Large Radius Carbon Nanotubes with a transverse magnetic field

We discuss the Luttinger Liquid behaviour of Large Radius Carbon Nanotube e.g. the Multi Wall ones (MWNT), under the action of a transverse magnetic field B. Our results imply a reduction with B in the value of the bulk critical exponent, α_bulk, for the tunneling density of states, which is in agreement with that observed in transport experiments. Then, the problem of transport through a Quantum Dot formed by two intramolecular tunneling barriers along the MWNT, weakly coupled to Tomonaga-Luttinger liquids is studied, including the action of a strong transverse magnetic field B. We predict the presence of some peaks in the conductance G versus B, related to the magnetic flux quantization in the ballistic regime, at a very low temperature T, and also at higher values of T, where the Luttinger behaviour dominates. The temperature dependence of the maximum G_max of the conductance peak according to the Sequential Tunneling follows a power law, G ∝T^γe-1 with γ_e linearly dependent on the critical exponent, α_end, strongly reduced by B.     

Magnetoresistance dependence on electrical contact geometry and field alignment in mesoscopic rectangular rings

We investigate the magnetoresistance (MR) responses in a ferromagnetic rectangular ring structure using a four-point probe technique. The measured MR curves are strongly dependent on the electrical contact geometries used. The associated MR characteristics are elucidated by a combination of micromagnetic simulations and resistor-network based model, and the MR contributions from different portions of the ring were studied quantitatively. The systematic angular MR measured at the ring corner further show that the locations of the domain wall nucleation are very sensitive to the field alignment.     

Coherent transport in disordered metals: zero dimensional limit

We consider non-equilibrium transport in disordered conductors. We calculate the interaction correction to the current for a short wire connected to electron reservoirs by resistive interfaces. In the absence of charging effects we find a universal current-voltage-characteristics. The relevance of our calculation for existing experiments is discussed as well as the connection with alternative theoretical approaches. Received 2 September 2002 Published online 29 October 2002     

Entanglement and transport through correlated quantum dot

We study quantum entanglement in a single-level quantum dot in the linear-response regime. The results show, that the maximal quantum value of the conductance 2e²/h not always match the maximal entanglement. The pairwise entanglement between the quantum dot and the nearest atom of the lead is also analyzed by utilizing the Wootters formula for charge and spin degrees of freedom separately. The coexistence of zero concurrence and the maximal conductance is observed for low values of the dot-lead hybridization. Moreover, the pairwise concurrence vanish simultaneously for charge and spin degrees of freedom, when the Kondo resonance is present in the system. The values of a Kondo temperature, corresponding to the zero-concurrence boundary, are also provided.     

Electrical generation of pure spin current with oscillating spin-orbit interaction

We propose an electrical scheme for the generation of a pure spin current without a charge current in a two-terminal device, which consists of a scattering region of a two-dimensional electron gas (2DEG) with Rashba (R) and/or Dresselhaus (S) spin-orbit interaction (SOI) and two normal leads. The SOI is modulated by a time-dependent gate voltage to pump a spin current. Based on a tight-binding model and the Keldysh Green’s function technique, we obtain the analytical expression of the spin current. It is shown that a pure spin current can be pumped out, and its magnitude could be modulated by device parameters such as the oscillating frequency of the SOI, as well as the SOI strength. Moreover, the spin polarisation direction of the spin current could also be tuned by the strength ratio between RSOI and DSOI. Our proposal provides not only a fully electrical means to generate a pure spin current but also a way to control the spin polarisation direction of the generated spin current.     

Spin-dependent transport through quantum dot with inelastic interactions

Using the Keldysh nonequilibrium Green function method, we theoretically investigate the electron transport properties of a quantum dot coupled to two ferromagnetic electrodes, with inelastic electron-phonon interaction and spin flip scattering present in the quantum dot. It is found that the electron-phonon interaction reduces the current, induces new satellite polaronic peaks in the differential conductance spectrum, and at the same time leads to oscillatory tunneling magnetoresistance effect. Spin flip scattering suppresses the zero-bias conductance peak and splits it into two, with different behaviors for parallel and anti-parallel magnetic configuration of the two electrodes. Consequently, a negative tunneling magnetoresistance effect may occur in the resonant tunneling region, with increasing spin flip scattering rate.     

Spin-flip and domain wall magnetoresistance in quantum magnetic nanocontacts

The theory of nanosize point contacts made of ferromagnetic metals is developed. A general quantum scattering theory is applied to calculate magnetoresistance of a nanocontact with a domain wall located in the constriction. The exact solution of the electron motion in a potential of the linear domain wall is used as a zero-order approximation. Spin-flip and spin-conserving quantized conductances of the nanocontact are calculated by the perturbation theory by the difference between the model and the Cabrera-Falicov potentials of the domain wall. It is explicitly shown that spin-flip conductance imposes natural limitation on magnetoresistance of the point contact, which otherwise diverges in the regime of complete spin-rectified conductance through the contact.     

Enhanced light emission in Si-nanoclusters arrays

An array of silicon nanoclusters aimed at producing light emission upon injection of electrons and holes from external sources is studied by Monte Carlo simulations. The conditions for obtaining a significant charge accumulation in the emitting nanoclusters are investigated as a function of array geometry and applied electric fields. It is found that if a stationary state, reached for an applied field F₀, is suddenly perturbed by a field F₁≫F₀, a significant increase in electron-hole pairs population can be obtained with respect to the case of a single field of constant intensity F₁, leading to enhanced light emission when the conductivity of the array is above 6×10^-10 [ Ω cm] ^-1. The excess population thus created gets fully recombined on the time scale of milliseconds, suggesting a device that can produce enhanced light emission in the range of kilohertz.     

Equilibrium spin current induced by spin-orbital interaction in a quantum dot system

We report a theoretical study of the equilibrium spin current flowing in a quantum dot system. Two electrodes are the two-dimensional electron gas with Rashba or Dresselhaus spin-orbital interaction. By using the Keldysh Green's function technique, we demonstrated that a nonzero spin current can flow in the system without bias. At the weak coupling between electrodes and the quantum dot, the spin current is approximately proportional to the cross product of two average pseudo-magnetizations in two electrodes, which agrees with the result of the linear response theory; whereas at the opposite case, the strong coupling between the quantum dot and electrodes can lead to a non-sinusoidal behavior of the equilibrium spin current. These behaviors of the equilibrium spin current are similar to the Josephson current.     

Correlated electron current and temperature dependence of the conductance of a quantum point contact

We investigate finite temperature corrections to the Landauer formula due to electron–electron interaction within the quantum point contact. When the Fermi level is close to the barrier height, the conducting wavefunctions become peaked on the barrier, enhancing the electron–electron interaction. At the same time, away from the contact the interaction is strongly suppressed by screening. To describe electron transport we formulate and solve a kinetic equation for the density matrix of electrons. The correction to the conductance G is negative and strongly enhanced in the region 0.5 × 2e²/h ≤ G ≤ 1.0 × 2e²/h. Our results for conductance agree with the so-called “0.7 structure” observed in experiments.     

Mo6S6 nanowires: structural, mechanical and electronic properties

The properties of nanowires were investigated with ab initio calculations based on the density-functional theory. The molecules build weakly coupled one-dimensional chains, like and Mo₆S_9-xI_x, and the crystals are strongly uniaxial in their mechanical and electronic properties. The calculated moduli of elasticity and resilience along the chain axis are c₁₁ = 320 GPa and E_R = 0.53 GPa, respectively. The electronic band structure and optical conductivity indicate that the crystals are good quasi-one-dimensional conductors. The frequency-dependent complex dielectric tensor ε, calculated in the random-phase approximation, shows a strong Drude peak in ε_∥, i.e., for the electric field polarised parallel to the chain axis, and several peaks related to interband transitions. The electron energy loss spectrum is weakly anisotropic and has a strong peak at the plasma frequency ħω_p ≈20 eV. The stability analysis shows that is metastable against the formation of the layered .