Quantum Hall states near the charge-neutral Dirac point in graphene

We investigate the quantum Hall (QH) states near the charge-neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors nu=+/-1 depend only on the perpendicular component of the field with respect to the graphene plane, indicating that they are not spin related. A nonlinear magnetic field dependence of the activation energy gap at filling factor nu=1 suggests a many-body origin. We therefore propose that the nu=0 and +/-1 states arise from the lifting of the spin and sublattice degeneracy of the n=0 Landau level, respectively.     

Temperature relaxation and energy loss of hot carriers in graphene

The temperature relaxation and energy loss of hot Dirac fermions are investigated theoretically in graphene with carrier–optical phonon scattering. The time evolutions of temperature and energy loss for hot Dirac fermions in graphene are calculated self-consistently. It shows that the carrier–optical phonon coupling results in the energy relaxation of hot carriers excited by an electric field, and the relaxation time for temperature is about 0.5–1 ps and the corresponding energy loss is about 10–25 nW per carrier for typically doped graphene samples with a carrier density range of 1–5×10¹² cm^?2. Moreover, we analyze the dependence of temperature and energy relaxation on initial hot carrier temperature, lattice temperature and carrier density in detail.     

The effects of the magnetopolaron on the energy gap opening in graphene

The magnetopolaron is formed via electron-acoustic deformation phonon coupling in the presence of a magnetic field in monolayer graphene. We find that an energy gap (EG) is opened due to the electron-phonon coupling. Both linear and square-root forms for the dependence of the EG on the magnetic field are obtained, which are in agreement with experimental measurements. Furthermore, we suggest that the EG can be estimated through observing the variation of Fermi velocity in cyclotron resonance experiments. The relation of the EG with the Debye cut-off wavenumber is also discussed.     

Electron-LO-phonon interaction in wurtzite GaN quantum wells under a magnetic field

We calculate the electron-LO-phonon relaxation rates in wurtzite GaN quantum wells in the presence of a magnetic field parallel to the growth direction. Using the dielectric continuum model (DCM), we are able to include contributions from both the interface and the quasi-confined phonon modes. The relaxation rate expression takes the phonon dispersion into account, and is applicable to all phonon modes. We find that the relaxation rates show strong oscillations as a function of the applied magnetic field. In relatively wide (8 nm) quantum wells, the inclusion of interface phonon mode decreases this oscillation amplitude. But in thin wells (5 nm), the interface phonon mode is of the same importance as the quasi-confined mode, and it strongly modifies the oscillation behavior.     

Transient response of hot electrons in narrow-gap semiconductors at low temperatures in the presence of a longitudinal quantizing magnetic field

Transient response of hot electrons in narrow-gap semiconductors to a step electric field in the presence of a longitudinal quantizing magnetic field has been studied at low temperatures using displaced Maxwellian distribution. The energy and momentum balance equations are used assuming acoustic phonon scattering via deformation potential responsible for the energy relaxation and elastic acoustic phonon scattering together with ionized impurity scattering for momentum relaxation. The calculations for the variation of drift velocity and electron temperature as functions of time are made for n-Hg_0.8Cd_0.2 Te in the extreme quantum limit at 1.5 K and 4.2 K. The momentum and energy relaxation times are found to be of the same order of magnitudes as with the experimental values. The magnetic field and lattice temperature dependences of the relaxation rates have been investigated.One of the authors, Suchandra Bhaumik, acknowledges the Council of Scientific and Industrial Research (New Delhi) for financial support.     

Filling-factor-dependent magnetophonon resonance in graphene

We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 --> +, 1 and -, 1 --> 0, at a magnetic field B{0} approximately 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice vibrations.     

Spin relaxation and band excitation of a dipolar Bose-Einstein condensate in 2D optical lattices

We observe interband transitions mediated by dipole-dipole interactions for an array of 1D quantum gases of chromium atoms, trapped in a 2D optical lattice. Interband transitions occur when dipolar relaxation releases an energy larger than the lattice band gap. For symmetric lattice sites, and a magnetic field parallel to the lattice axis, we compare the measured dipolar relaxation rate with a Fermi golden rule calculation. Below a magnetic field threshold, we obtain an almost complete suppression of dipolar relaxation, leading to metastable 1D gases in the highest Zeeman state.     

Transport through graphene on SrTiO3

We report transport measurements through graphene on SrTiO(3) substrates as a function of magnetic field B, carrier density n, and temperature T. The large dielectric constant of SrTiO(3) very effectively screens long-range electron-electron interactions and potential fluctuations, making Dirac electrons in graphene virtually noninteracting. The absence of interactions results in an unexpected behavior of the longitudinal resistance in the N=0 Landau level and in a large suppression of the transport gap in nanoribbons. The "bulk" transport properties of graphene at B=0 T, on the contrary, are completely unaffected by the substrate dielectric constant.     

NMR parameters in gapped graphene systems

We calculate the nuclear spin-lattice relaxation time and the Knight shift for the case of gapped graphene systems. Our calculations consider both the massive and massless gap scenarios. Both the spin-lattice relaxation time and the Knight shift depend on temperature, chemical potential, and the value of the electronic energy gap. In particular, at the Dirac point, the electronic energy gap has stronger effects on the system nuclear magnetic resonance parameters in the case of the massless gap scenario. Differently, at large values of the chemical potential, both gap scenarios behave in a similar way and the gapped graphene system approaches a Fermi gas from the nuclear magnetic resonance parameters point of view. Our results are important for nuclear magnetic resonance measurements that target the ¹³C active nuclei in graphene samples.     

Interaction of longitudinal phonons with discrete breather in strained graphene

We numerically analyze the interaction of small-amplitude phonon waves with standing gap discrete breather (DB) in strained graphene. To make the system support gap DB, strain is applied to create a gap in the phonon spectrum. We only focus on the in-plane phonons and DB, so the issue is investigated under a quasi-one-dimensional setup. It is found that, for the longitudinal sound waves having frequencies below 6 THz, DB is transparent and thus no radiation of energy from DB takes place; whereas for those sound waves with higher frequencies within the acoustic (optical) phonon band, phonon is mainly transmitted (reflected) by DB, and concomitantly, DB radiates its energy when interacting with phonons. The latter case is supported by the fact that, the sum of the transmitted and reflected phonon energy densities is noticeably higher than that of the incident wave. Our results here may provide insight into energy transport in graphene when the spatially localized nonlinear vibration modes are presented.     

β型锑烯热电输运性质的第一性原理研究

利用第一性原理与半经典玻尔兹曼方程，计算并分析β型锑烯的声子色散、声子群速度、声子弛豫时间、晶格热导率及不同温度下的塞贝克系数、电导率和电子热导率随化学势的变化；结果表明：β型锑烯由于非平面六角结构，三支声学声子在Γ点附近均呈线性变化；声学声子对整个晶格热导率的贡献高达96.68%，而光学声子仅仅占到3.32%；由于较大的声光带隙（a-o gap）导致LA支在声子群速度和弛豫时间中占据主导地位，从而增大了LA支声子对整个热导的贡献；热电优值随温度的升高而增大，在费米面附近其绝对值最大可达0.275.     

Specific heat and thermal conductivity in the mixed state of MgB2

The specific heat C and the electronic and phononic thermal conductivities kappa(e) and kappa(ph) are calculated in the mixed state for magnetic fields H near H(c2), including the effects of supercurrent flow and Andreev scattering. The resulting function C(H) is nearly linear while kappa(e)(H) exhibits an upward curvature near H(c2). The slopes decrease with impurity scattering which improves the agreement with the data on MgB2. The ratio of phonon relaxation times tau(n)/tau(s)=g(omega(0),H) for phonon energy omega(0) is smeared out around omega(0)=2Delta and tends to one for increasing H. This leads to a rapid reduction of kappa(ph)(H) in MgB2 for relatively small fields due to the rapid suppression of the smaller energy gap.     

Effects of Screening and Finite Phonon Energy on the Transport in Quantized Layers in Compound Semiconductors

Analytical expressions for the momentum relaxation times of the conduction electrons in a non-degenerate two dimensional electron gas in the surface of a compound semiconductor have been obtained for interactions with the piezoelectric and deformation potential acoustic phonons taking due account of the screening of the perturbing potential under the the condition of low lattice temperature when the phonon energy cannot be neglected in comparison to the average thermal energy of the electrons and for that matter the equipartition approximation for the phonon distribution is hardly valid. The relaxation times calculated for inversion layers in GaAs and ZnO are found to depend upon the carrier energy, the lattice temperature and the impurity concentration in rather complex manners which are significantly different from what follows from the traditional approach of either neglecting the phonon energy or disregarding the process of screening. It is seen how the finite value of the phonon energy and the screening of the perturbing potential change the mobility characteristics significantly at the low lattice temperatures. The temperature dependence of the zero field mobility that one obtains using the relaxation times calculated here is quite different from the traditional laws.     

Anisotropic spin relaxation in graphene

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B=0 and B=2 T shows a 20% decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin-orbit effective fields in the in-plane and out-of-plane directions and discuss the role of the Elliott-Yafet and Dyakonov-Perel mechanisms for spin relaxation.     

Semiempirical analysis of spin-lattice relaxation in rare earth Kramers' doublets

The spin-lattice coupling constants of Kramers' doublet measured in uniaxial stress experiments, are used to calculate the spin-lattice relaxation times in the direct process range. A comparison with experimental data shows that a true spin lattice relaxation time was obtained only when T₁ was measured as a function of magnetic field at high fields. We suggest that the effect of the phonon bottleneck is important at lower fields.     

Intersubband lifetimes in InAs/GaSb superlattices using saturated absorption spectroscopy

We investigate intersubband relaxation rates above the optical phonon energy in a InAs/GaSb superlattice using saturation spectroscopy. A high-intensity free-electron laser tuned to the intersubband transition energy is used to saturate the absorption process revealing picosecond relaxation rates. The effects of the parallel magnetic field and laser energy on the relaxation processes are explored.     

非简谐性离子晶格在光场中的能谱动态斯塔克效应

以文献（５）在偶极近似与旋转波近似下导出的哈密顿算符（Ｈａｍｉｌｔｏｎｉｎａｎ）为基础,并以单模光频支声子与单模光场的共振耦合系统为简化模型,取得该耦合系统相互作用能谱的比较严格的解析解,同时还发现一种起源于声子－声子耦合的真空（能级）平移效应,可以预期,本文所研究的能谱将是有关晶体物质结构的又一种信息源。     

Magnetic-like field inducing negative Dirac mass in graphene on hexagonal boron nitride

The tight-binding electrons in graphene grown on top of hexagonal boron nitride (h-BN) substrate are studied. The two types of surfaces on the h-BN substrate give rise to Dirac fermions having positive and negative masses. The positive and negative masses of the Dirac fermions lead to the gapped graphene to behave as a “pseudo” ferromagnet. A very large (pseudo) tunneling magnetoresistance is predicted when the Fermi level approaches the gap region. The energy gap due to the breaking of sublattice symmetry in graphene on h-BN substrate is analogous to magnetic-induced energy gap on surface of topological insulators. We point out that positive and negative masses may correspond to signs of magnetic-like field perpendicular to graphene sheet acting on pseudo magnetic dipole moment of electrons, leading to pseudo-Larmor precession and Stern–Gerlach magnetic force.     

Nonlinear properties of gated graphene in a strong electromagnetic field

We develop a microscopic theory of a strong electromagnetic field interaction with gated bilayer graphene. Quantum kinetic equations for density matrix are obtained using a tight binding approach within second quantized Hamiltonian in an intense laser field. We show that adiabatically changing the gate potentials with time may produce (at resonant photon energy) a full inversion of the electron population with high density between valence and conduction bands. In the linear regime, excitonic absorption of an electromagnetic radiation in a graphene monolayer with opened energy gap is also studied.     

Chirality-induced dynamic kohn anomalies in graphene

We develop a theory for the renormalization of the phonon energy dispersion in graphene due to the combined effects of both Coulomb and electron-phonon (e-ph) interactions. We obtain the renormalized phonon energy spectrum by an exact analytic derivation of the phonon self-energy, finding three distinct Kohn anomalies (KAs) at the phonon wave vector q=omega/v, 2k_{F}+/-omega/v for LO phonons and one at q=omega/v for TO phonons. The presence of these new KAs in graphene, in contrast to the usual KA q=2k_{F} in ordinary metals, originates from the dynamical screening of e-ph interaction (with a concomitant breakdown of the Born-Oppenheimer approximation) and the peculiar chirality of the graphene e-ph coupling.