Spin-controlled nanomechanics induced by single-electron tunneling

We consider dc-electronic transport through a nanowire suspended between normal- and spin-polarized metal leads in the presence of an external magnetic field. We show that magnetomotive coupling between the electrical current through the nanowire and vibrations of the wire may result in self-excitation of mechanical vibrations. The self-excitation mechanism is based on correlations between the occupancy of the quantized electronic energy levels inside the nanowire and the velocity of the nanowire. We derive conditions for the occurrence of the instability and find stable regimes of mechanical oscillations.     

Quantum shuttle phenomena in a nanoelectromechanical single-electron transistor

An analytical analysis of quantum shuttle phenomena in a nanoelectromechanical single-electron transistor has been performed in the realistic case, when the electron tunneling length is much greater than the amplitude of the zero point oscillations of the central island. It is shown that when the dissipation is below a certain threshold value, the vibrational ground state of the central island is unstable. The steady state into which this instability develops is studied. It is found that if the electric field E between the leads is much greater than a characteristic value E(q), the quasiclassical shuttle picture is recovered, while if E0) shuttle vibrations.     

Energy dissipation mechanisms in carbon nanotube oscillators

Energy transfer from the translational degrees of freedom to phonon modes is studied for isolated systems of two coaxial carbon nanotubes, which may serve as a nearly frictionless nano-oscillator. It is found that for oscillators with short nanotubes (less than 30 A) a rocking motion, occurring when the inner tube is pulled about 1/3 out of the outer tube, is responsible for significant phonon energy acquisitions. For oscillators with long nanotubes translational energies are mainly dissipated via a wavy deformation in the outer tube undergoing radial vibrations. Frictional forces between 10(-17) and 10(-14) N per atom are found for various dissipative mechanisms.     

Band-to-band tunneling in carbon nanotube field-effect transistors

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate voltage range for switching the device on or off, current flow is controlled here by the valence and conduction band edges in a bandpass-filter-like arrangement. We discuss how the structure of the nanotube is the key enabler of this particular one-dimensional tunneling effect.     

Correlated tunneling in intramolecular carbon nanotube quantum dots

We investigate correlated electronic transport in single-walled carbon nanotubes with two intramolecular tunneling barriers. We suggest that below a characteristic temperature the long-range nature of the Coulomb interaction becomes crucial to determine the temperature dependence of the maximum G(max) of the conductance peak. Correlated sequential tunneling dominates transport yielding the power law G(max) proportional, variant T(alpha(end-end)-1), typical for tunneling between the ends of two Luttinger liquids. Our predictions are in agreement with recent measurements.     

Metal–insulator-transition studied by single-electron tunneling

We present measurements of single-electron tunneling in a vertical GaAs/AlGaAs double-barrier resonant-tunneling device with a low emitter doping. The transport spectrum of our sample exhibits a series of differential conductance peaks which experience an exponential shift to higher voltages with magnetic fields beyond a critical magnetic field. We attribute this effect to a metal-insulator transition in our device. A detailed analysis of the temperature-dependence of this effect is shown.     

Dissipation in nanoelectromechanical systems

This article is a review of the dissipation processes in nanoelectromechanical systems (NEMS). As NEMS technology becomes more and more prevalent in research and engineering applications, it is of great importance to understand the dissipative mechanisms that in part define the dynamic response of such devices. The purpose of this work is to understand, sort, and categorize dominant dissipation sources and to determine their significance with respect to physics processes and engineering considerations.     

Dynamics of single-wall carbon nanotube synthesis by laser vaporization

The key spatial and temporal scales for single-wall carbon nanotube (SWNT) synthesis by laser vaporization at high temperatures are investigated with laser-induced luminescence imaging and spectroscopy. Graphite/(Ni, Co) targets are ablated under typical synthesis conditions with a Nd:YAG laser at 1000 °C in a 2-in. quartz tube reactor in flowing 500-Torr Ar. The plume of ejected material is followed for several seconds after ablation using combined imaging and spectroscopy of Co atoms, C₂ and C₃ molecules, and clusters. The ablation plume expands in stages during the first 200 7s after ablation and displays a self-focusing behavior. Interaction of the plume with the background gas forms a vortex ring which segregates and confines the vaporized material within a ~1-cm³ volume for several seconds. Using time-resolved spectroscopy and spectroscopic imaging, the time for conversion of atomic and molecular species to clusters was measured for both carbon (200 7s) and cobalt (2 ms) at 1000 °C. This rapid conversion of carbon to nanoparticles, combined with transmission electron microscopy analysis of the collected deposits, indicate that nanotube growth occurs over several seconds in a plume of mixed nanoparticles. By adjusting the time spent by the plume within the high-temperature zone using these in situ diagnostics, single-walled nanotubes of controlled (~100 nm) length were grown and the first estimate of a growth rate on single laser shots (0.2 7m/s) was obtained.     

Control of the motion of nanoelectromechanical systems based on carbon nanotubes

A new method is proposed for controlling the motion of nanoelectromechanical systems based on carbon nanotubes. In this method, a single-walled nanotube acquires an electric dipole moment owing to the chemical adsorption of atoms or molecules at open ends of the nanotube and, then, the electric dipole moment thus induced can be set in motion under the effect of a nonuniform electric field. The electric dipole moments of chemically modified nanotubes are calculated for the first time. The possibility of controlling the motion of nanotube-based nanoelectromechanical systems with the proposed method is demonstrated using a gigahertz oscillator as an example. The operating characteristics of the gigahertz oscillator and the controlling electric field are calculated.     

Control of morphology for energy dissipation in carbon nanotube forests

This study focuses on the effect of carbon precursor on the carbon nanotube (CNT) morphology and energy dissipation. Benzene, toluene, and m-xylene were used as carbon precursors for the synthesis of CNT forests following a chemical vapor deposition process. The results indicate that substituents on the benzene ring increase entanglement in the CNT forests. The absorbed energy was slightly greater for CNT forests synthesized using m-xylene than for toluene, but was much smaller for benzene. When compressed to a strain of 0.67, the toluene CNTs absorbed more energy than the m-xylene CNTs. The restitution was much higher for the forests synthesized with m-xylene than toluene while it further decreased for the forests made with benzene. A strong correlation is also observed between the average diameter of the CNTs and the number of methyl substituents on the benzene ring. The control of the entanglement of the CNT forests can potentially be used to design high energy absorbing composites for blast energy dissipation.     

Control of the motion of nanoelectromechanical systems based on carbon nanotubes by electric fields

A new method is proposed for controlling the motion of nanoelectromechanical systems based on carbon nanotubes. In this method, a single-walled nanotube acquires an electric dipole moment owing to the chemical adsorption of atoms or molecules at open ends of the nanotube. The electric dipole moments of carbon nanotubes with chemically modified ends are calculated by the molecular orbital method. These nanotubes can be set in motion under the effect of a nonuniform electric field. The possibility of controlling the motion of nanoelectromechanical systems with the proposed method is demonstrated using a nanotube-based gigahertz oscillator as an example. The operating characteristics of the gigahertz oscillator are analyzed, and its operation is simulated by the molecular dynamics method. The controlling parameters and characteristics corresponding to the controlled operating conditions at a constant frequency for the system under investigation are determined.     

Blockade of tunneling in a suspended single-electron transistor

The tunneling of electrons that is limited by the Coulomb blockade effect in a single-electron transistor with a quantum dot based on a narrow GaAs/AlGaAs quantum wire suspended over a substrate is investigated. By means of a direct comparison experiment, the tunneling features associated with the separation of the quantum dot from the substrate are revealed. In addition to an increase in the charge energy (Coulomb gap), which reaches 170 K in temperature units, the dependence of this energy on the number of electrons in the quantum dot, which varies from zero to four, is observed. This dependence is explained by a change in the effective size of the dot due to the effect of the depleting gate voltage. Moreover, the additional blockade of tunneling that is different from the Coulomb blockade and is specific for suspended structures is observed. It is shown that this blockade is not associated with the dynamical effect of exciting local phonon modes and can be attributed to the change in the static elastic strains in the quantum wire that accompany the tunneling of an electron to/from the quantum dot.     

Atomic tunneling states with dissipation in glasses: temperature-dependent two-level systems

By taking account of the influence of dissipation on atomic tunneling states in glasses, we introduce a density of states of two-level systems which is non-linearly temperature dependent. Based on this model, we can explain the “excess T³” anomaly in the specific heat and the “plateau” in the thermal conductivity of glasses.     

Isotope engineering of carbon nanotube systems

The synthesis of a unique isotope engineered system, double-wall carbon nanotubes with natural carbon outer and highly 13C enriched inner walls, is reported from isotope enriched fullerenes encapsulated in single-wall carbon nanotubes (SWCNTs). The material allows the observation of the D line of the highly defect-free inner tubes that can be related to a curvature induced enhancement of the electron-phonon coupling. Ab initio calculations explain the inhomogeneous broadening of inner tube Raman modes due to the distribution of different isotopes. Nuclear magnetic resonance shows a significant contrast of the isotope enriched inner SWCNTs compared to other carbon phases and provides a macroscopic measure of the inner tube mass content. The high curvature of the small diameter inner tubes manifests in an increased distribution of the chemical shift tensor components.     

Chemically induced conductance switching in carbon nanotube circuits

The chemical reactivity of carbon nanotubes in H2SO4 is investigated using individual, single-walled carbon nanotubes (SWNTs) incorporated into electronic devices. Exploiting the device conductance as a sensitive indicator of chemical reactions, discrete oxidation and reduction events can be clearly observed. During oxidation, a SWNT opens circuits to a nanometer-scale tunnel junction with residual conduction similar to Frenkel-Poole charge emission. When electrochemically reduced, a SWNT returns to its original conductance. This redox cycle can be repeated many times, suggesting a novel chemical method of reversibly switching SWNT conductivity.