Observing spin polarization of individual magnetic adatoms

We have used spin-polarized scanning tunneling spectroscopy to observe the spin polarization state of individual Fe and Cr atoms adsorbed onto Co nanoislands. These magnetic adatoms exhibit stationary out-of-plane spin polarization, but have opposite sign of the exchange coupling between electron states of the adatom and the Co island surface state: Fe adatoms exhibit parallel spin polarization to the Co surface state while Cr adatoms exhibit antiparallel spin polarization. First-principles calculations predict ferromagnetic and antiferromagnetic alignment of the spin moment for individual Fe and Cr adatoms on a Co film, respectively, implying negative spin polarization for Fe and Cr adatoms over the energy range of the Co surface state.     

Spin-polarized tunneling spectroscopy of co(0001) surface States

Spin-polarized tunneling was studied on Co surfaces of exchange coupled Co/Cu/Co samples, using an Fe tip. A spin-polarized surface state of Co(0001) was found to exist at -0.43 eV relative to E(F), with FWHM of 0.23 eV in the spectra. The state exhibits negative magnetoresistance with an effective spin polarization of less than -23%, suggesting negatively high spin polarization of the surface state. Our first-principles calculations have supported the existence of the surface state. From the calculation, the state is identified as a minority spin Gamma-centered d(2)(z)-like surface state.     

Apparent spin polarization decay in Cu-dusted Co/Al2O3/Co tunnel junctions

Co/Al2O3/Co magnetic tunnel junctions with an interfacial Cu layer have been investigated with in situ growth characterization and ex situ magnetotransport measurements. Cu interlayers grown on Co give an approximately exponential decay of the tunneling magnetoresistance with xi approximately 0.26 nm while those grown on Al2O3 have a decay length of 0.70 nm. The difference in decay lengths can be explained by different growth morphologies, and in this way clarifies a present disagreement in the literature. For monolayer coverage of Cu, we show that the tunneling spin polarization is suppressed by at least a factor of 2 compared to Co and beyond approximately 5 ML it becomes vanishingly small.     

Observation of a high spin polarization of secondary electrons from single crystal Fe and Co

The spin polarization of secondary electrons with nearly zero kinetic energy from Fe (100) and Co (10$\text{1}$0), excited with photons of energy between 20 and 60 eV, was found to be 45%±5% for Fe and 35%±5% for Co. This value is higher than the average valence band spin polarization P_b=n_b/n=2.2/8=27% and 1.7/9=19% for Fe and Co, respectively. With increasing kinetic energy, the spin polarization of the secondaries decreases to the value of P_b within the first 5 eV, remaining constant (within statistical error) at higher kinetic energies. As a spin dependent scattering process we propose excitations within the d-bands, which can be shown to be asymmetric with respect to the electron spin. The high net spin polarization of the slowest emitted electrons is obtained by filtering out monitory-spin electrons at the vacuum barrier.     

Reduction in critical current density of current-induced magnetization switching

We have investigated the current-induced magnetization switching in an exchange-biased spin valve structure. By using an unpatterned antiferromagnetic layer to pin the fixed Co layer, we obtained a lower switching current density by a factor of 5 than a simple spin valve structure. For the application, it is important to know how to keep the spin polarization when the thicker layer is pinned by an antiferromagnet. The unpatterned pinned ferromagnetic lead can be a good solution for spin-transfer-torque-activated device. The effect of Cu buffer layer on the top of the thin Co and Ru buffer layer under the thick Co layer on the current-induced magnetization switching in cobalt-based trilayer spin valves was also investigated. The experimental results showed that the Ru buffer layer in combination with Cu buffer layer could induce a decrease in the critical switching current by 30%, and an increase in the absolute resistance change by 35%, which is caused by an improvement of a microstructure of a thicker Co polarizer.     

Interfacial Ferromagnetism in a Co/CdTe Ferromagnet/Semiconductor Quantum Well Hybrid Structure

The magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe interface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co.     

Ferroelectricity induced by spin-dependent metal-ligand hybridization in Ba₂CoGe₂O₇

We have investigated the variation of induced ferroelectric polarization under a magnetic field with various directions and magnitudes in a staggered antiferromagnet Ba?CoGe?O?. While the ferroelectric polarization cannot be explained by the well-accepted spin current model nor the exchange striction mechanism, we have shown that it is induced by the spin-dependent p-d hybridization between the transition metal (Co) and ligand (O) via the spin-orbit interaction. On the basis of the correspondence between the direction of electric polarization and the magnetic state, we have also demonstrated the electrical control of the magnetization direction.     

Spin polarization and charge transfer of Co nanoclusters coated with CO molecules

We have investigated magnetic properties of Co clusters coated with CO molecules by first-principles density functional calculations. Total magnetic moment of the system decreases with the increase of CO molecule concentration regardless of adsorption sites for CO molecules. Spin polarization slightly increases as CO molecules are adsorbed on the most stable sites of Co cluster, which is caused by the increased local spin polarization of p-electrons due to charge transfer from Co clusters to CO molecules.     

Evolution with composition of the d-band density of states at the Fermi level in highly spin polarized Co1-xFexS2

Highly spin polarized (SP) and half-metallic ferromagnetic systems are of considerable current interest and of potential importance for spintronic applications. Recent work has demonstrated that Co1-xFexS2 is a highly polarized ferromagnet (FM) where the spin polarization can be tuned by alloy composition. Using 59Co FM-NMR as a probe, we have measured the low-temperature spin relaxation in this system in magnetic fields from 0 to 1.0 T for 0相似文献   

Enhancement of spin-orbit torque efficiency by tailoring interfacial spin-orbit coupling in Pt-based magnetic multilayers

We study inserting Co layer thickness-dependent spin transport and spin-orbit torques (SOTs) in the Pt/Co/Py trilayers by spin-torque ferromagnetic resonance. The interfacial perpendicular magnetic anisotropy (IPMA) energy density ($K_{\rm s}= 2.7 $ erg/cm$^{2}$, 1 erg = 10$^{-7}$ J), which is dominated by interfacial spin-orbit coupling (ISOC) in the Pt/Co interface, total effective spin-mixing conductance $(G_{\mathrm{eff,tot}}^{\mathrm{\uparrow \downarrow }}=\mathrm{0.42\times }{10}^{15} \mathrm{\Omega }^{-1}\cdot\mathrm{m}^{-2}$) and two-magnon scattering ($\beta_{\mathrm{TMS}}= 0.46 {\mathrm{nm}}^{2}$) are first characterized, and the damping-like torque ($\xi_{\mathrm{DL}}= 0.103$) and field-like torque ($\xi _{\mathrm{FL}}=-0.017$) efficiencies are also calculated quantitatively by varying the thickness of the inserting Co layer. The significant enhancement of $\xi_{\mathrm{DL}}$ and $\xi_{\mathrm{FL}}$ in Pt/Co/Py than Pt/Py bilayer system originates from the interfacial Rashba-Edelstein effect due to the strong ISOC between Co-3d and Pt-5d orbitals at the Pt/Co interface. Additionally, we find a considerable out-of-plane spin polarization SOT, which is ascribed to the spin anomalous Hall effect and possible spin precession effect due to IPMA-induced perpendicular magnetization at the Pt/Co interface. Our results demonstrate that the ISOC of the Pt/Co interface plays a vital role in spin transport and SOTs-generation. Our finds offer an alternative approach to improve the conventional SOTs efficiencies and generate unconventional SOTs with out-of-plane spin polarization to develop low power Pt-based spintronic via tailoring the Pt/FM interface.     

Field induced magnetic density in the paramagnetic compound LuCo2

The magnetization density induced in LuCo₂ by an applied magnetic field was measured by means of polarized neutron diffraction. The measurements were performed on a single crystal at 100 K in an applied field of 57.2 kOe. The observed density is localized on Co atoms with a form factor which is, within the experimental accuracy, similar to that of 3d electrons in Co metal. Weak additional magnetic amplitudes reveal a nonuniform polarization of the conduction band. Its mean value is opposite to the Co moment as in Co metal.     

Effect of spin polarization on the optical properties of Co-doped TiO2 thin films

A non-linear variation of bandgap energy with Co doping is observed in sputter deposited Co-doped TiO₂ thin films. This peculiar behavior is explained on the basis of mechanical stress in the films together with spin polarization due to s,p-d exchange interaction between the localized Co 3d electrons and delocalized electrons. Quantitative analyses of mechanical stress and grain boundary barrier potential due to spin polarization are performed from the below bandgap absorption tail. Furthermore, anomalous variations in both the refractive indices and extinction coefficients with Co doping are noted and are explained on the basis of ab-initio calculations based on density functional theory.     

Negative spin polarization and large tunneling magnetoresistance in epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions

We perform an ab initio study of spin-polarized tunneling in epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes. We predict a large tunneling magnetoresistance in these junctions, originating from a mismatch in the majority- and minority-spin bands both in bulk bcc Co and at the Co/SrTiO(3)/Co interface. The intricate complex band structure of SrTiO(3) enables efficient tunneling of the minority d electrons which causes the spin polarization of the Co/SrTiO(3)/Co interface to be negative in agreement with experimental data. Our results indicate that epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes are a viable alternative for device applications.     

Optimization of spin-triplet supercurrent in ferromagnetic Josephson junctions

We have observed long-range spin-triplet supercurrents in Josephson junctions containing ferromagnetic (F) materials, which are generated by noncollinear magnetizations between a central Co/Ru/Co synthetic antiferromagnet and two outer thin F layers. Here we show that the spin-triplet supercurrent is enhanced up to 20 times after our samples are subject to a large in-plane field. This occurs because the synthetic antiferromagnet undergoes a "spin-flop" transition, whereby the two Co layer magnetizations end up nearly perpendicular to the magnetizations of the two thin F layers. We report direct experimental evidence for the spin-flop transition from scanning electron microscopy with polarization analysis and from spin-polarized neutron reflectometry. These results represent a first step toward experimental control of spin-triplet supercurrents.     

Coverage dependent magnetic properties of Co chain-coated carbon nanotube

Magnetic properties of Co chain-coated carbon nanotube (CNT) were investigated using a first-principles calculation. Binding energy between Co chain and CNT increased with the coverage ratio, and the adsorption of Co chains on CNT enhanced the conductance channel. Total magnetic moment of Co chains coated on CNT increased with the coverage ratio, while the magnetic moment per Co atom decreased due to spin flip of majority spin states in Co atoms. Spin polarization at the Fermi level of the Co chains was calculated to converge to that of bulk fcc Co.     

Effect of Coulomb repulsion on spin and orbital magnetism of cobalt–benzene complex: A relativistic density functional study

We have demonstrated electronic configurations and magnetic properties of single Co adatom on benzene (Bz) molecule in the framework of relativistic density functional theory. A sequence of fixed spin moment (FSM) calculations were carried out with and without Coulomb repulsion (U). We have investigated that varying the strength of Coulomb repulsion results to different equilibrium positions for the Co adatom on benzene molecule. It was shown that inclusion of the on-site Coulomb repulsion in the Co 3d orbitals affects significantly the geometry of Co–Bz complex. We also found two stable low-spin and high-spin multiplicities for the complex. The nature of the high-spin configuration was explained according to the Hubbard electron–electron correlation in 3d shell of the Co adatom. Our FSM results indicate that the high-spin state is a global minimum in the presence of Hubbard parameter U. The relativistic spin–orbit coupling and using orbital polarization correction induce considerable orbital magnetism in both low and high spin states of the Co–Bz complex. We have also calculated magnetic anisotropy energies for two spin states and we found out that an out-of-plane magnetic orientation of Co adatom is more favorable in the low spin state whereas the Coulomb repulsion (U = 2 eV and U = 4 eV) predicts an in-plane magnetic orientation for Co adatom. Our findings can be implicitly taken into account for the extended system of added single Co atom on graphene.     

Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

Voltage-dependence of the tunneling magnetoresistance effect in the granular C₆₀–Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C₆₀–Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C₆₀-based matrix (C₆₀–Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures.     

Screen charge transfer by grounded tip on ferroelectric surfaces

We have investigated polarization reversal and charge transfer effects by a grounded tip on 50 nm thick ferroelectric thin films using piezoelectric force microscopy and Kelvin force microscopy. We observed the polarization reversal in the center of written domains, and also identified another mechanism, which is the transfer of screen charges toward the grounded tip. In order to overcome these phenomena, we successfully applied a modified read/write scheme featuring a bias voltage. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Interlayer coupling between out-of-plane magnetized multilayers across a thin antiferromagnetic spacer

The interlayer exchange coupling between Co/Pt perpendicular-to-plane magnetized layers across a thin IrMn spacer layer was experimentally studied. In contrast to earlier studies on interlayer coupling through antiferromagnetic NiO, which revealed an oscillatory coupling behavior as a function of NiO thickness, a ferromagnetic coupling was observed here in the range of IrMn thickness between 0.6 and 1.5 nm and antiferromagnetic between 1.5 and 2.5 nm. The antiferromagnetic coupling is attributed to an orange peel magnetostatic mechanism whereas the ferromagnetic coupling is attributed to an out-of-plane polarization of the antiferromagnetic IrMn layer induced by the interfacial exchange interaction with the adjacent out-of-plane ferromagnetic layers. Measurements of hysteresis loops versus temperature show that the coupling vanishes at 510 K for t_IrMn=1 nm. This critical temperature is far below the Néel temperature of bulk IrMn, but above the blocking temperature of IrMn/Co bilayers at such thickness. Using a one-dimensional model describing a partial domain wall in the antiferromagnet, we explain the coupling in terms of an out-of-plane tilt of the Mn moments at the IrMn/(Co/Pt) interfaces yielding a weak net polarization of the IrMn. Finally, the non-oscillatory decay of the coupling was attributed to the compensated spin structure of the IrMn in the parallel to the interfaces.     

Angle-dependent Ni2+ X-ray magnetic linear dichroism: interfacial coupling revisited

Using x-ray magnetic linear dichroism (XMLD) for magnetometry requires detailed knowledge of its dependence on the relative orientation of polarization, magnetic moments, and crystallographic axes. We show that Ni2+ L(2,3) XMLD in cubic lattices has to be described as a linear combination of two fundamental spectra--not one as previously assumed. The spectra are calculated using atomic multiplet theory and the angular dependence is derived from crystal field symmetry. Applying our results to Co/NiO(001) interfaces, we find perpendicular coupling between Ni and Co moments.