The mechanism of plasma-induced deposition of amorphous silicon from silane

Time-resolved mass spectrometric data show that the concentration of di- and trisilane, which are formed from monosilane under discharge conditions typical for the deposition of high electronic quality amorphous silicon, correlate with the measured deposition rate of a-Si. The data can be quantitatively and self-consistently described by a simple set of consecutive reactions:

1. SiH₄ →-SiH₂ + H₂
2. SiH₂ + SiH₄ → Si₂H₆
3. SiH₂ + Si₂H₆ → Si₃H₈
4. Si _n H_{2(n + 1)} →n ·a-Si:H+(n+1)H₂,n=2,3

The only fitting parameter necessary for an excellent fit of the measured data over a wide range of experimental parameters is the value of the reactive sticking coefficient .for the decomposition of di- and trisilane (reaction 3). The resultant value agrees well with the published data of other authors and with those calculated from the measured deposition rate and Si₂H₆, concentration. We did not find and physically meaningful way to lit the measured data with the various “SiH₃ models” proposed by other authors who assumed that the dominant species responsiblefor the deposition of a-Si: H is the SiH₃, radical. For this and some additional reasons mentioned in the present paper. the SiH₃ model is in disagreement with available experimental data.     

Analysis of the electronic structure of Hf(Si0.5As0.5)As by X-ray photoelectron and photoemission spectroscopy

The ternary hafnium silicon arsenide, Hf(Si_xAs_1−x)As, has been synthesized with a phase width of 0.5?x?0.7. Single-crystal X-ray diffraction studies on Hf(Si_0.5As_0.5)As showed that it adopts the ZrSiS-type structure (Pearson symbol tP6, space group P4/nmm, Z=2, a=3.6410(5) Å, c=8.155(1) Å). Physical property measurements indicated that it is metallic and Pauli paramagnetic. The electronic structure of Hf(Si_0.5As_0.5)As was investigated by examining plate-shaped crystals with laboratory-based X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (PES). The Si 2p and As 3d XPS binding energies were consistent with assignments of anionic Si¹⁻ and As^1-. However, the Hf charge could not be determined by analysis of the Hf 4f binding energy because of electron delocalization in the 5d band. To examine these charge assignments further, the valence band spectrum obtained by XPS and PES was interpreted with the aid of TB-LMTO band structure calculations. By collecting the PES spectra at different excitation energies to vary the photoionization cross-sections, the contributions from different elements to the valence band spectrum could be isolated. Fitting the XPS valence band spectrum to these elemental components resulted in charges that confirm that the formulation of the product is Hf²⁺[(Si_0.5As_0.5)As]²⁻.     

Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon

Ab initio calculations have been performed on model molecular clusters simulating bridging fluorine configurations in fluorinated amorphous silicon. Optimized geometries, total energies and vibrational frequencies have been computed for (SiH₃)₂F⁺ clusters with the terminal SiH₃ groups eclipsed or staggered. The stable minimum on the potential energy surface corresponds to a linear, but very flexible, Si-F-Si bridging configuration. (SiH₃)₂F⁺ appears to be stable with respect to unimolecular decomposition. The calculated vibrational frequencies include a strongly infrared-active antisymmetric stretch mode at 740 cm⁻¹, similar to the metastable “Bband” experimentally observed at 750 cm⁻¹ in the ion-implanted samples. These results are compared with calculated geometries and vibrational frequencies of SiH₃F, SiH₃F⁺, SiH₂F⁺ and Si₂H₅F.     

Ab initio chemical kinetics for the unimolecular decomposition of Si2H5 radical and related reverse bimolecular reactions

For plasma enhanced and catalytic chemical vapor deposition (PECVD and Cat‐CVD) processes using small silanes as precursors, disilanyl radical (Si₂H₅) is a potential reactive intermediate involved in various chemical reactions. For modeling and optimization of homogeneous a‐Si:H film growth on large‐area substrates, we have investigated the kinetics and mechanisms for the thermal decomposition of Si₂H₅ producing smaller silicon hydrides including SiH, SiH₂, SiH_3, and Si₂H₄, and the related reverse reactions involving these species by using ab initio molecular‐orbital calculations. The results show that the lowest energy path is the production of SiH + SiH₄ that proceeds via a transition state with a barrier of 33.4 kcal/mol relative to Si₂H₅. Additionally, the dissociation energies for breaking the Si? Si and H? SiH₂ bonds were predicted to be 53.4 and 61.4 kcal/mol, respectively. To validate the predicted enthalpies of reaction, we have evaluated the enthalpies of formation for SiH, SiH₂, HSiSiH₂, and Si₂H₄(C_2h) at 0 K by using the isodesmic reactions, such as ²HSiSiH₂ + ¹C₂H₆→¹Si₂H₆ + ²HCCH₂ and ¹Si₂H₄(C_2h) + ¹C₂H₆ → ¹Si₂H₆ + ¹C₂H₄. The results of SiH (87.2 kcal/mol), SiH₂ (64.9 kcal/mol), HSiSiH₂ (98.0 kcal/mol), and Si₂H₄ (68.9 kcal/mol) agree reasonably well previous published data. Furthermore, the rate constants for the decomposition of Si₂H₅ and the related bimolecular reverse reactions have been predicted and tabulated for different T, P‐conditions with variational Rice–Ramsperger–Kassel–Marcus (RRKM) theory by solving the master equation. The result indicates that the formation of SiH + SiH₄ product pair is most favored in the decomposition as well as in the bimolecular reactions of SiH₂ + SiH₃, HSiSiH₂ + H₂, and Si₂H₄(C_2h) + H under T, P‐conditions typically used in PECVD and Cat‐CVD. © 2013 Wiley Periodicals, Inc.     

Bildung siliciumorganischer Verbindungen. 111. Die Hydrierung Si-chlorierter,C-spiroverbrückter 2,4-Disilacyclobutane mit LiAlH4 und iBu2AlH. Der Zugang zum Si8C3H20

Formation of Organosilicon Compounds. 111. The Hydrogenation of Si-chlorinated, C-spiro-linked 2,4-Disilacyclobutanes with LiAlH₄ or iBu₂AlH. The Access to Si₈C₃H₂₀ The hydrogenation of Si-chlorinated, C-spiro-linked 2,4-disilacyclobutanes containing C(SiCl₃)₂ terminal groups with LiAlH₄ in Et₂O proceeds under complete cleavage of the fourmembered rings and under elimination of one SiH₃ group. Such, Si₈C₃Cl₂₀ 4 forms (H₃Si)₂CH? SiH₂? CH(SiH₃)? SiH₂? CH(SiH₃)₂ 4 α, and even Si₈C₃H₂₀ 4a with LiAlH₄ forms 4 α. The hydrogenation of related compounds containing however CH(SiCl₃) terminal groups similarly proceeds under ring cleavage but no SiH₃ groups are eliminated. Such, (Cl₃Si)CH(SiCl₂)₂CH(SiCl₃) 41 forms (H₃Si)₂CH? SiH₂? CH₂(SiH₃) 41 α. However, in reactions with iBu₂AlH in pentane neither the disilacyclobutane rings are cleaved nor are SiH₃ groups eliminated. Only by this method Si₈C₃H₂₀ is accessible from 4 , Si₆C₂H₁₆ 3a from Si₆C₂Cl₁₆ 3 and Si₄C₂H₁₂ 41a from 41 . C(SiCl₃)₄ cleanly produces C(SiH₃)₄. Based on the knowledge about the different properties of LiAlH₄ and iBu₂AlH in hydrogenation reactions of disilacyclo-butanes it was possible to elucidate the composition and the structures of the hydrogenated derivatives of the product mixture from the reaction of MeCl₂Si? CCl₂? SiCl₃ with Si(Cu) [1] and to trace them back to the initially formed Si chlorinated disilacyclobutanes Si₆C₂Cl₁₅Me 34 , Si₆C₂Cl₁₄Me₂ 35 , Si₈C₃Cl₁₉Me 36 and Si₈C₃Cl₁₈Me₂ 37 . Compound 4a forms colourless crystals of space group P1 with a = 799.7(6), b = 1263.6(12), c = 1758.7(14) pm, α = 103.33(7)°, β = 95.28(6)°, γ = 105.57(7)° and Z = 4.     

Präparative Darstellung von Disilanyl- und Trisilanyljodiden

Zusammenfassung Die Darstellung von Si₂H₅J sowie von Si₂H₄J₂ (SiH₃–SiHJ₂+SiH₂J–SiH₂J), Si₃H₇J (SiH₃–SiH₂–SiH₂J+SiH₃–SiHJ–SiH₃) und Si₃H₆J₂ (Isomerengemisch) durch Umsetzung der entsprechenden Silane mit elementarem Jod (ohne Verwendung eines Lösungsmittels) wird mitgeteilt. Durch katalytische Mengen Alkohol wird die Reaktion von Jod mit Silanen beschleunigt, gleichzeitig jedoch die Spaltung der Si–Si-Bindung gefördert.

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Preparation of disilanyl iodide and trisilanyl iodide

The preparation of Si₂H₅J as well as Si₂H₄J₂ (SiH₃–SiHJ₂+SiH₂J–SiH₂J), Si₃H₇J (SiH₃–SiH₂–SiH₂J+SiH₃–SiHJ–SiH₃) and Si₃H₆J₂ (isomeric mixture) by reaction of the corresponding silanes with elementary iodine without using a solvent is communicated. The reaction of iodine with silanes is accelerated by catalysings amounts of alcohol. At the same time, however, the cleavage of the Si–Si-bond is stimulated.

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Mit 3 Abbildungen

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19. Mitt.:F. Fehér, D. Schinkitz undH. Strack, Z. anorg. allgem. Chem.385, 202 (1971).

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B. Mostert, Dissertation Univ. Köln 1961.

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A. G. Wronka, Dissertation Univ. Köln 1961.

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G. Betzen, Dissertation Univ. Köln 1967,G. Betzen, Diplomarbeit Univ. Köln 1963.     

Vacuum ultraviolet photoelectron spectroscopy of transient species. XVII. The SiH3(X 2A1) radical

The first band in the vacuum ultraviolet photoelectron spectrum of the silyl radical, corresponding to the process SiH₃ (X ¹A′₁) ← SiH₃(X ²A₁), has been observed with HeI radiation. Extensive vibrational fine structure associated with the SiH₃⁺ deformation vibration was observed in this band and analysis of the structure gave a value of ω = 820 = 40 cm^-1 for the out-of-plane deformation mode in the ion. The vertical and adiabatic ionization energies were measured as 8.74 = 0.01 eV and 8.14 ± 0.01 eV respectively and use of the latter value together with the established heat of formation of the silyl radical allows an improved heat of formation of SiH₃^-. ΔH₂₉₈⁰ (SiH₃^-) to be derived as 980 ± 7 kJ mol^?1.     

Spektroskopische und physikalische Daten von Jodsilanen

Zusammenfassung Von den Jodderivaten der Silane SiH₄, Si₂H₆ und Si₃H₈ werden Dichte, Dampfdruck und Molrefraktion sowie die entsprechenden Atom- und Bindungsinkremente mitgeteilt. Die Ramanspektren von SiH₃J, Si₂H₅J und Si₃H₇J werden aufgenommen und zugeordnet.

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Spectroscopic and other physical investigations of silanyl iodides

Density, vapour pressure and molecular refraction as well as the corresponding atom increments and bond increments of the iodine derivatives of the silanes SiH₄, Si₂H₆ and Si₃H₈ are communicated. The Raman spectra of SiH₃J, Si₂H₅J and Si₃H₇J are recorded and assigned.

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XX. Mitt.:F. Fehér, B. Mostert, A. G. Wronka undG. Betzen, Mh. Chem.103, 959 (1972).

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A. G. Wronka, Dissertation Univ. Köln 1961.

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B. Mostert, Dissertation Univ. Köln 1961.     

The IR multiphoton decomposition of PH3SiH4 mixtures sensitized by SiF4

The SiF₄-photosensitized decomposition of PH₃SiH₄ mixtures by IR radiation at 1025.3 cm⁻¹ results in the formation of H₂, SiH₃PH₂ and Si₂H₆ in the gas phase and a solid deposit which is probably a mixture of polymeric PSi hydrides (PSiH_x). The effects of the composition of the reactant mixture, the pressure, the incident pulse energy and the presence of foreign gases (helium and nitrogen) on the course of the reaction were investigated. It was found that SiH₃PH₂ and Si₂H₆ are formed solely by the insertion of SiH₂ into PH₃ and SiH₄ respectively. A mechanism involving excitation of SiF₄ by absorption of radiation from the CO₂ laser beam and further collisional energy transfer between SiF₄^* and other molecules present in the system is in accord with the experimental results.     

Infrared Spectrum of the Si3H8+ Cation: Evidence for a Bridged Isomer with an Asymmetric Three‐Center Two‐Electron Si?H?Si Bond

The IR spectrum of Si₃H₈⁺ ions produced in a supersonic plasma molecular beam expansion of SiH₄, He, and Ar is inferred from photodissociation of cold Si₃H₈⁺–Ar complexes. Vibrational analysis of the spectrum is consistent with a Si₃H₈⁺ structure ( 2⁺ ) obtained by a barrierless addition reaction of SiH₄ to the disilene ion (H₂Si?SiH₂⁺) in the silane plasma. In this structure, one of the electronegative H atoms of SiH₄ donates electron density into the partially filled electrophilic π orbital of the disilene cation. The resulting asymmetric Si? H? Si bridge of the 2⁺ isomer with a bond energy of approximately 60 kJ mol^?1 is characteristic for a weak three‐center two‐electron bond, which is identified by its strongly IR active asymmetric Si? H? Si stretching fundamental at about 1765 cm^?1. The observed 2⁺ isomer is calculated to be only a few kJ mol^?1 less stable than the global minimum structure of Si₃H₈⁺ ( 1⁺ ), which is derived from vertical ionization of trisilane. Although more stable, 1⁺ is not detected in the measured IR spectrum of Si₃H₈⁺–Ar, and its lower abundance in the supersonic plasma is rationalized by the production mechanism of Si₃H₈⁺ in the silane plasma, in which a high barrier between 2⁺ and 1⁺ prevents the efficient formation of 1⁺ . The potential energy surface of Si₃H₈⁺ is characterized in some detail by quantum chemical calculations. The structural, vibrational, electronic and energetic properties as well as the chemical bonding mechanism are investigated for a variety of low‐energy Si₃H₈⁺ isomers and their fragments. The weak intermolecular bonds of the Ar ligands in the Si₃H₈⁺–Ar isomers arise from dispersion and induction forces and induce only a minor perturbation of the bare Si₃H₈⁺ ions. Comparison with the potential energy surface of C₃H₈⁺ reveals the differences between the silicon and carbon species.     

Reactions of trimethylgallium with silicon hydrides,germane and diborane

Methylation of SiH₄, MeSiH₃, Si₂H₆, GeH₄ and B₂H₆, but not of PH₃ or AsH₃, was observed during reaction (230–324°C) with GaMe₃. The products from the SiH₄ and Si₂H₆ reactions were MeSiH₃, Me₂SiH₂ and Me₃SiH. The GeH₄-derived products were similar, with Me₄Ge also being formed. The only methylated products from B₂H₆ was BMe₃. The silane reactions were surface-catalyzed (presumably by surface hydroxyl groups), while those of GeH₄ and B₂H₆ may have occurred via gas-phase free radical processes.     

Thermal decomposition kinetics of polysilanes: Disilane,trisilane, and tetrasilane

The decomposition kinetics of disilane with added butadiene, trisilane both neat and with added butadiene, trimethylsilane or H₂, and normal and iso-tetrasilane both neat and in the presence of added butadiene are reported. Arrhenius parameters of the primary dissociation reactions are determined: A-factors suggest that polysilane decompositions (1) have similar intrinsic activation entropies (ΔS? ≈? 6.2 ± 5 e.u.) and (2) have activation energies which increase with increasing reaction endothermicities. Relative trapping efficiencies of SiH₄, Si₂H₆, Si₃H₈, C₄H₆, Me₃SiH, and H₂ toward SiH₂ and SiH₃SiH are also determined. Other results include the heat of formation of silylsilylene, ΔH ${}_{\text{°}}^{\text{f}}$ (SiH₃SiH) = 75.3 Kcal/mol, and the activation energy for 1,1-H₂ elimination from disilane (EH₂ = 57.8 kcal/mol).     

A study of the electronic structure of phenylsilanes by X-ray emission spectroscopy and quantum chemical calculation methods

The electronic structure of a series of phenylsilanes Ph_4?n SiH _n (n = 0?C3) is studied by X-ray emission spectroscopy and quantum chemical calculations by the density functional theory method. Based on the calculations theoretical X-ray emission SiK??₁ spectra of phenylsilanes Ph_4?n SiH _n (n = 0?C4) are constructed and their energy structure and shape turn out to be well consistent with experiment. The distribution of the electron density of states with different symmetry of Si, C, H atoms are also constructed. An analysis of the obtained X-ray fluorescent SiK??₁ spectra and the distribution of the electron density of states in Ph₄Si and Ph₃SiH compounds shows that their energy structure is mainly determined by a system of the energy levels of phenyl ligands weakly perturbed by interactions with valence AOs of silicon. In the energy structure of MOs of the PhSiH₃ compound, energy orbitals related to t ₂ and a ₁ levels of tetrahedral SiH₄ are mainly presented.     

Schwingungsspektroskopische Untersuchungen an den Organohydrogensilanen (XCH2)(CH3)2SiH (X = Cl,Br, J), X(YO)2SiH (X = CH3, C2H5/Y = CH3, C2H5 … tert.-C4H9), (C6H5)2SiH2 und C6H5SiH3

Infrared and Raman Spectroscopic Investigations on the Organosubstituted Silicon Hydrides (XCH₂)(CH₃)₂SiH (X = Cl, Br, J), X(YO)₂SiH (X = CH₂, C₂H₅/Y = CH₃, C₂H₅ … tert.-C₄H₉), (C₆H₅)₂SiH₂ and C₆H₅SiH₃ Typical band splittings, specially for the SiH stretching vibration, are shown in the infrared and Raman spectra of the silicon hydrides (XCH₂)(CH₃)₂SiH (X = Cl, Br, J), and X(YO)₂SiH (X = CH₃, C₂H₅/Y = CH₃, C₂H₅ … tert.-C₄H₉). The cause of this behavior is in all probability the existence of rotational isomers. Raman polarization measurements at organosubstituted silicon di- and trihydrides demonstrate the accidental degeneracy of the SiH valence vibrations.     

Reactions of SiH2(X̄1A1) with H2, CH4, C2H4, SiH4 and Si2H6 at 298 K

Reaction rate constants of SiH₂(X̄¹A₁) have been directly measured for the first time using the laser photolysis—laser-induced fluorescence method. The preparation of SiH₂ radical in the laser photolysis (193 nm) of phenylsilane and the concentration of the radical is demonstrated by a dye laser at 580.1 nm (X̄¹A₁-Ā¹B₁). The reaction rate constants of SiH₂(X̄¹A₁) with H₂, CH₄, C₂H₄, SiH₄ and Si₂H₆, are 0.001, 0.01, 0.97, 1.1 and 5.7×10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, respectively. For SiH₂(Ā¹B₁(0.2,0)), the collision-free lifetime is 0.6 μs and the quenching rate constant for He is 3.8×10⁻¹⁰ cm³ molecule⁻¹ s⁻¹.     

IR Spectrum and Structure of Protonated Monosilanol: Dative Bonding between Water and the Silylium Ion

We report the spectroscopic characterization of protonated monosilanol (SiH₃OH₂⁺) isolated in the gas phase, thus providing the first experimental determination of the structure and bonding of a member of the elusive silanol family. The SiH₃OH₂⁺ ion is generated in a silane/water plasma expansion, and its structure is derived from the IR photodissociation (IRPD) spectrum of its Ar cluster measured in a tandem mass spectrometer. The chemical bonding in SiH₃OH₂⁺ is analyzed by density functional theory (DFT) calculations, providing detailed insight into the nature of the dative H₃Si⁺‐OH₂ bond. Comparison with protonated methanol illustrates the differences in bonding between carbon and silicon, which are mainly related to their different electronegativity and the different energy of the vacant valence p_z orbital of SiH₃⁺ and CH₃⁺.     

Electronic structure of saturated hydrocarbons in the semi-empirical equivalent orbital method

The problem of obtaining the matrix elements of Hartree-Fock Hamiltonians for alkanes using the EO method is considered. It has been shown that the data on the electronic structure of diamond together witht ₁/e splitting in the neopentane photoelectron spectrum are helpful to produce such EO method parameter scale which involves even “through space” interactions. In terms of the EO method the photoelectron spectra of propane, butane, isobutane, and neopentane are interpreted. The valence band structure of polyethylene in analytical form is obtained.     

Core-hole photoionization study of polysilane compounds

We present the results obtained with a new experimental set-up designed for the study of free semi-conductor clusters. This set-up is aimed to study the mass distribution of particles and the evolution of electronic properties as a function of the size, using the technique of core hole photoionization. The cluster production is based on the technique of radio-frequency discharge decomposition of a gas. We study the gaseous particles (Si _n H _x , 0<x<2n+2) generated by pure silane (SiH₄) discharges at low pressures (<10 millitorr) under continuous RF (Radio-Frequency) excitation conditions. We have studied the neutral species present in the post discharge zone and the positive ions present in the discharge. We identify the neutral species as polysilane compounds. We have also compared the ionization spectra obtained near Si-2p edge for the particles containing few silicon atoms with the spectra of SiH₄ and Si₂H₆ molecules. For these molecules, the experimental observations are in agreement with theoretical calculations.     

The threshold photoelectron spectrum of silane

The threshold photoelectron spectrum of SiH₄, has been recorded between 11 and 20 eV. The vibrational structure observed in the first band of the HeI PES could not be detected. Between 15 and 18 eV. autoionizing Rydberg states converging to the ²A₁ ionisation limit are observed. They can be interpreted as excitations to npt₂ or ndt₂ orbitals.     

The structure and energy of SiH+5. comparisons with CH+5 and BH5

Differences between SiH⁺₅ and CH⁺₅ are more significant than the similarities. The proton affinity of SiH₄ exceeds than of CH₄ by ≈25 kcal/mol. but the heat of hydrogenation of SiH⁺₃ is smaller than that of CH⁺₃ by nearly the same amount. Like CH⁺₅ the C₅ structures of SiH⁺₅ are preferred, but SiH⁺₅ is best regarded as a weaker SiH⁺₃—H₂ complex. D_3h, C_2v, and C_4v forms are much higher in energy and SiH⁺₅ should not undergo hydrogen scrambling (pseudorotation) readily, as does CH⁺₅ The neutral BH₅ is only weakly bound toward loss H₂, and the D_3h. C_2v, and C_4v forms are also high in energy. The contral-atom electronegativities, C⁺ > B > Si⁺, control this behavior. The electronegativities also determine the ability to bear positive charges. Thermodynamically. SiH⁺₅ and SiH⁺₃ are more stable than CH⁺₅ and CH⁺₃, respectively; hydride transfer occurs from SiH₄ to CH⁺₃ and proton transfer from CH⁺₅ to SiH₄.