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1.
Many refractory metal silicides have received great attention due to their potential for innovative developments in the silicon‐based microelectronic industry. However, tantalum silicide, Ta2Si, has remained practically unnoticed since its successful application in silicon carbide technology as a simple route for a high‐k dielectric formation. The thermal oxidation of Ta2Si produces high‐k dielectric layers, (O? Ta2Si)‐based on a combination of Ta2O5 and SiO2. In this work, we investigate the interfacial properties of thermally oxidized (850–1050 °C) Ta2Si on commercial silicon substrates. The implications of diffusion processes in the dielectric properties of an oxidized layer are analyzed. In particular, we observe migration of tantalum pentoxide nanocrystals into the substrate with increasing oxidation temperature. An estimation of the insulator charge and interfacial O? Ta2Si/Si trap density is also presented. Copyright © 2008 John Wiley & Sons, Ltd.  相似文献   

2.
Various states of hydrogen are identified on the foil and film surfaces of palladium and tantalum by photoelectric, conductivity, and thermal desorption methods. They are formed in the course of 2 diffusion through a membrane and in the course of adsorption from the gas phase. The effect of an ethylene pyrolysis product, pyrocarbon, on the activity in CO oxidation on the palladium surface with and without ads is determined. The presence of hydrogen is found to weaken the effect of pyrocarbon. A study of hydrogen adsorption on the tantalum foil showed that hydrogen adsorption drastically declines in the presence of chemisorbed CO, but the H–Ta binding strength doubles. The fact that the sorption ability of tantalum is completely restored upon CO adsorption and partially restored upon 2 chemisorption is achieved by thermochemical treatment in hydrogen.  相似文献   

3.
Method for recovery of tantalum from wastes formed in manufacture of lithium tantalate single crystals to obtain high-purity tantalum pentaoxide for synthesis of LiTaO3 stock is suggested. The extraction of tantalum with a mixture of extractive agents, dimethylamides of carboxylic acids of the C10?CC13 fraction and octanol-1 in Eskeide diluent, was studied.  相似文献   

4.
A plasma-electrochemical synthesis was used to prepare chromium and sodium tantalate layers. These layers were deposited on a tantalum anode surface as ceramic compounds from aqueous electrolytes. The typical pore structure morphology of the tantalate layer was characterised by SEM as well as fractures which provide evidence of an intimate contact between layers and substrate. An XRD-study showed that the layers are composed of a mixture of Ta2O5 and either NaTaO3 or CrTaO4 depending on the electrolyte composition. Quantitative characterisation by EPM indicated higher chromium and tantalum concentrations on the electrolyte/layer interface than at the layer/tantalum interface. The chemical state of tantalum was investigated by means of XPS.  相似文献   

5.
Potassium fluorotantalate—K2TaF7 (K-salt) is used as an initial material for tantalum metal production. Current technology of tantalum metal powder is based on K-salt preparation from fluoric solutions in the form of small crystals and its reduction by sodium from the melt. The paper collects available data on K-salt preparation, structure and main properties of crystalline, dissolved and molten K-salt. The information could be useful for tantalum producers and researchers dealing with tantalum chemistry.  相似文献   

6.
Phenylarsonic acid permits satisfactory separation of niobium and tantalum and estimation of tantalum from an oxalate solution containing sulphuric acid up to pH 5.8. For complete precipitation of niobium the pH should exceed 4.8. In mixtures, tantalum is precipitated below pH 3.0 and niobium is then precipitated above pH 5.0. When the oxalate concentration is high, recovery of niobium with cupferron is recommended. When the ratio of Nb2O5, to Ta2O5 exceeds 2:1, reprecipitation of tantalum is necessary. The effect of interfering ions is studied.  相似文献   

7.
Ammonia is strongly absorbed on tantalum hydroxide prepared by ammonia neutralization of TaF7 2− or TaF6 complexes. FTIR analysis of tantalum hydroxide shows a characteristic peak around 1,400 cm−1, attributed to NH4 +. TG and FTIR analyses show that the NH4 + decomposes at about 500 °C. The correct chemical formula of tantalum hydroxide prepared by ammonia neutralization of TaF7 2− or TaF6 is thus TaO x (OH)5-x (NH4) x . This conclusion is also confirmed by TG and FTIR analysis of tantalum hydroxide treated with various concentrations of inorganic acid at room temperature. The NH4 + in tantalum hydroxide can be exchanged completely in aqueous HNO3 solution, and the weight loss of the resulting sample is ended at about 415 °C by TG analysis. The NH4 + can also be exchanged completely with aqueous H2SO4 solution; however, SO4 2− is weakly absorbed on the tantalum hydroxide. Finally, the NH4 + can be exchanged partially with aqueous H3PO4 solution; however, PO4 3− is strongly absorbed on the tantalum hydroxide.  相似文献   

8.
Parameters for the preparation of concentrated tantalum, niobium, and titanium fluoride solutions by dissolution of their oxides or hydroxides in hydrofluoric acid were studied. Anatase titania, niobium oxide, and tantalum oxide calcined to 900°C were found to have high dissolution rates. Solid phases separated upon the dissolution of niobium, tantalum, and titanium oxides in hydrofluoric acid were identified as NbO2F, TaO2F, Ta3O7F, and TiOF2. Niobium hydroxide dissolution in an autoclave at the atmospheric pressure gave various complex salts: NH4NbOF4 and (NH4)3Nb2OF11.  相似文献   

9.
A procedure was developed for the analysis of 18 trace impurity elements in capacitor-grade tantalum powder (Ta), potassium tantalum fluoride (K2TaF7), and tantalum pentoxide (Ta2O5) using inductively coupled plasma optical emission spectrometry (ICP-OES). The detection limits achieved were in the ppb levels. The samples were dissolved in hydrofluoric acid (HF) in a microwave digestion system and the Ta matrix was extracted using cyclo hexanone. The impurity traces remained almost completely in the aqueous phase. The text was submitted by the authors in English.  相似文献   

10.
Phase formation in the Fe1 ? x -Ta x -S system with 0 < x < 0.5 has been studied at temperatures up to 1273 K using X-ray diffraction. When the constituent elements are heated to 823 K, troilite (Tr), pyrrhotites (PoI, PoII, and Pom), and pyrite (FeS2) are formed. Tantalum at these temperatures only insignificantly dissolves in iron sulfides. In the range 823–1273 K, tantalum reacts with pyrrhotites PoII and Pom and pyrite to yield PoI, FeTa3S6, and α-Fe. The solubility limit of tantalum in PoI is near Fe0.98Ta0.02S. The initiation temperature of the reaction between troilite and tantalum producing FeTa3S6 and α-Fe is 873 K. The unit cell parameters of tantalum change at 500 K, presumably due to the dissolution of iron and possibly sulfur (iron sulfide).  相似文献   

11.
A plasma-electrochemical synthesis was used to prepare chromium and sodium tantalate layers. These layers were deposited on a tantalum anode surface as ceramic compounds from aqueous electrolytes. The typical pore structure morphology of the tantalate layer was characterised by SEM as well as fractures which provide evidence of an intimate contact between layers and substrate. An XRD-study showed that the layers are composed of a mixture of Ta2O5 and either NaTaO3 or CrTaO4 depending on the electrolyte composition. Quantitative characterisation by EPM indicated higher chromium and tantalum concentrations on the electrolyte/layer interface than at the layer/tantalum interface. The chemical state of tantalum was investigated by means of XPS. Received: 15 July 1997 / Revised: 5 March 1998 / Accepted: 9 March 1998  相似文献   

12.
Some niobium and tantalum phosphates have been prepared and their infra-red spectra have been recorded and compared with those of reference substances. It has been possible to identify P04-3, P2O7-4 and possibly P3O10-5 groups in different samples of niobium and tantalum phosphates.  相似文献   

13.
Hexakis(2,6‐diisopropylphenylisocyanide)tantalum is the first isocyanide analogue of the highly unstable Ta(CO)6 and represents the only well‐defined zerovalent tantalum complex to be prepared by conventional laboratory methods. Two prior examples of homoleptic Ta0 complexes are known, Ta(benzene)2 and Ta(dmpe)3, dmpe=1,2‐bis(dimethylphosphano)ethane, but these have only been accessed via ligand co‐condensation with tantalum vapor in a sophisticated metal‐atom reactor. Consistent with its 17‐electron nature, Ta(CNDipp)6 undergoes facile one‐electron oxidation, reduction, or disproportionation reactions. In this sense, it qualitatively resembles V(CO)6, the only paramagnetic homoleptic metal carbonyl isolable under ambient conditions.  相似文献   

14.
The distribution of tantalum(V) between 0.1M trioctylamine oxide dissolved in xylene and sulphuric acid solutions has been studied. On the basis of results on the distribution, it is concluded that at sulphuric acid concentration 0.5M, tantalum is probably extracted by a solvate mechanism as the complex Ta(OH) (SO4)2·3TOAO. It has also been shown that tantalum can be quantitatively separated from niobium, uranium, thorium and rare earth elements by extraction with N-oxide of trioctylamine from 0.5M sulphuric acid solution.  相似文献   

15.
The synthesis and structural characterization of new tantalum(V) compounds containing a single hydrazido(I) ligand are reported. Hydrazinolysis of TaCl(NMe2)4 using trimethylsilyl(dimethyl)hydrazine affords the compound TaCl(NMe2)3[N(TMS)NMe2] in essentially quantitative yield. Metathetical replacement of the chloride ligand in TaCl(NMe2)3[N(TMS)NMe2] by LiNMe2 gives the all-nitrogen coordinated compound Ta(NMe2)4[N(TMS)NMe2]. VT 1H NMR studies support the existence of low-energy pathways involving rotation about the Ta–N bonds of the ancillary amido and hydrazido ligands in both hydrazido-substituted compounds. X-ray crystallographic analyses confirm the octahedral disposition about the tantalum metal in TaCl(NMe2)3[N(TMS)NMe2] and Ta(NMe2)4[N(TMS)NMe2] and the presence of an η2-hydrazido(I) ligand. Preliminary data using Ta(NMe2)4[N(TMS)NMe2] as an ALD precursor for the preparation of tantalum nitride and tantalum oxide thin films are presented.  相似文献   

16.
Reactions of SnF2and SbF3with TaF5and TaCl5in acetonitrile and dimethyl sulfoxide were studied by 19F and 119Sn NMR. It was found that SnF2and SbF3behave as fluorine donors for tantalum(V). The anionic and cationic tantalum fluorochloride complexes form in acetonitrile, while [TaF6]predominates in dimethyl sulfoxide. Tin(II) occurs in solution in the form of fluorine-containing polymeric cations.  相似文献   

17.
An investigation is conducted on enhancing lithium-ion intercalation and conduction performance of transparent organo tantalum oxide (TaO y C z ) films, by addition of lithium via a fast co-synthesis onto 40 Ω/□ flexible polyethylene terephthalate/indium tin oxide substrates at the short exposed durations of 33–34 s, using an atmospheric pressure plasma jet (APPJ) at various mixed concentrations of tantalum ethoxide [Ta(OC2H5)5] and lithium tert-butoxide [(CH3)3COLi] precursors. Transparent organo-lithiated tantalum oxide (Li x TaO y C z ) films expose noteworthy Li+ ion intercalation and conduction performance for 200 cycles of reversible Li+ ion intercalation and deintercalation in a 1 M LiClO4-propylene carbonate electrolyte, by switching measurements with a potential sweep from ?1.25 to 1.25 V at a scan rate of 50 mV/s and a potential step at ?1.25 and 1.25 V, even after being bent 360° around a 2.5-cm diameter rod for 1000 cycles. The Li+ ionic diffusion coefficient and conductivity of 6.2?×?10?10 cm2/s and 6.0?×?10?11 S/cm for TaO y C z films are greatly progressed of up to 9.6?×?10?10 cm2/s and 7.8?×?10?9 S/cm for Li x TaO y C z films by co-synthesis with an APPJ.  相似文献   

18.
《Mendeleev Communications》2022,32(5):579-581
The reaction beetwen tantalum pentakis(3,5-dimethyl-pyrazolate) and CS2 afforded novel complex [Ta(=S)(dmpz)2{(dmpz)3CS}]. In this reaction the molecule of CS2 undergoes scission with the migration of one sulfide to the tantalum atom while three pyrazolate residues migrate to carbon with the formation of unusual (dmpz)3CS ligand. The structure of the product was established by X-ray diffraction.  相似文献   

19.
Tantalum sulfide cluster ions were produced by direct laser ablation, and were studied with a tandem time-of-flight mass spectrometer. The main dissociation channel of the UV-photolysis (248 nm) of tantalum sulfide cluster ions is sequent S2 loss. Structures with Ta3S4 and Ta4S6 as frameworks were suggested for the large tantalum sulfide cluster ions.The work was supported by the National Natural Science Fouldation of China.  相似文献   

20.
Half‐metallocene diene complexes of niobium and tantalum catalyzed three‐types of polymerization: (1) the living polymerization of ethylene by niobium and tantalum complexes, MCl24‐1,3‐diene)(η5‐C5R5) ( 1‐4 ; M = Nb, Ta; R = H, Me) combined with an excess of methylaluminoxane; (2) the stereoselective ring opening metathesis polymerization of norbornene by bis(benzyl) tantalum complexes, Ta(CH2Ph)24‐1,3‐butadiene)(η5‐C5R5) ( 11 : R = Me; 12 : R = H) and Ta(CH2Ph)24o‐xylylene)(η5‐C5Me5) ( 16 ); and (3) the polymerization of methyl methacrylate by butadiene‐diazabutadiene complexes of tantalum, Ta(η2‐RN=CHCH=NR)(η4‐1,3‐butadiene)(η5‐C5Me5) ( 25 : R = p‐methoxyphenyl; 26 : R = cyclohexyl) in the presence of an aluminum compound ( 24 ) as an activator of the monomer.  相似文献   

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