Dielectric properties of a triglycine sulfate crystal grown with a transition through the Curie point

The dielectric properties of the triglycine sulfate (TGS) crystal grown by lowering the temperature with a transition through Curie point T_C during its growth are studied. The greatest values of low-frequency dielectric permittivity ε_max(T = T_C) and effective dielectric permittivity ε_eff(E₀) correspond to the layer of crystal formed at the temperature of the phase transition.     

<Emphasis Type="Italic">N</Emphasis>-shaped voltage-current characteristic and current oscillations in Sm<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> Sr<Subscript>x</Subscript>MnO<Subscript>3</Subscript> manganite

The voltage-current characteristics (VCC) of Sm_1?xSr_x MnO₃ samples with x=0.425 and x=0.450 were experimentally studied at a temperature of 77 K in pulsed and constant electric (E) and magnetic (H) fields up to 10 kOe for the H‖E and H⊥E orientations. N-shaped VCCs and high-frequency (up to 3 MHz) current oscillations were observed. It was found that the effect of colossal magnetoresistance had a threshold character and was smoothly reduced to zero with E→0.     

Optical Properties of Nonstoichiometric Tantalum Oxide TaO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> &lt; 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

Optical properties of amorphous nonstoichiometric tantalum-oxide films of variable composition (TaO_x, x = 1.94–2.51) in the spectral range of 1.12–4.96 eV, obtained by ion-beam sputtering-deposition of metallic tantalum at different partial oxygen pressures (0.53–9.09 × 10^–3 Pa), have been investigated. It is shown by spectral ellipsometry that the character of dispersion of the absorption coefficient and refractive index in TaO_x of variable composition suggests that light-absorbing films with dispersion similar to that in metals are formed at oxygen pressures in the growth chamber below 2.21 × 10^–3 Pa, whereas transparent films with dielectric dispersion are formed at pressures above 2.81 × 10^–3 Pa. According to the data of quantumchemical simulation, the absorption peak at a photon energy of 4.6 eV in TaO_x observed in the absorptioncoefficient dispersion spectrum is due to oxygen vacancy. The peak in the Raman-scattering spectra of TaO_x films with metallic dispersion at frequencies of 200–230 cm^–1 is presumably related to tantalum nanoclusters.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Heat capacity of the Pb<Subscript>5</Subscript>(Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>x</Subscript>)<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric system

The temperature dependences of the molar heat capacity at constant pressure, C_p, of Pb₅(Ge_1?xSi_x)₃O₁₁ crystals with x=0, 0.39, and 0.45 in the range 5–300 K, as well as of their permittivity, dielectric losses, and the pyroelectric effect, have been measured. Experimental data on the temperature behavior of the heat capacity are presented in the form of a sum of two Debye and one Einstein terms, C_p(T)=0.405C_D1(Θ_D1=160 K, T)+0.53C_D2(Θ_D2=750 K, T)+0.046C_E(Θ_E=47 K, T). Besides a peak in the region of the ferroelectric Curie point T_c=450 K for crystals with x=0, the temperature dependences of the heat capacity did not reveal any other pronounced anomalies.     

Dielectric properties and specific heat of Bi<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>Sm<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>FeO<Subscript>3</Subscript> multiferroics

The specific heat and dielectric permittivity of Bi_1–xSm_xFeO₃ (x = 0–0.30) multiferroics have been studied in the temperature range of 300–800 K. A slight substitution of bismuth with samarium is established to cause a considerable shift in the antiferromagnetic phase transition temperature and to an increase in the specific heat over a wide temperature range. Other anomalies typical of phase transitions have been found in the temperature dependences of the specific heat and dielectric permittivity for the compounds with x = 0.10 and 0.15 at T ≈ 735 and 495 K, respectively. The results of the studies of the specific heat have been discussed together with the data of the structural investigations.     

Specific features of dielectric anomalies in Pb<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te(Ga) near a ferroelectric phase transition

The dielectric properties of Pb_{1 ? x} Ge _x Te(Ga) (x = 0.02, 0.03, 0.05) were studied in the temperature range 77–150 K at frequencies of 10⁴–10⁶ Hz. It is revealed that the ferroelectric phase transition temperature T _c and the permittivity ? of Pb_{1 ? x} Ge _x Te(Ga) increase substantially with the Ge content. The temperature dependence of the permittivity of Pb_{1 ? x} Ge _x Te shows two peaks; the main peak is at the ferroelectric phase transition temperature T _c , and an additional peak is at T ₁ > T _c .     

Dielectric properties of betaine phosphite-betaine phosphate solid-solution crystals in the improper ferroelastic phase

Temperature dependences of dielectric permittivity in the improper ferroelastic phase, including the region of the improper ferroelastic phase transition occurring at T=T_c1, were studied in the betaine phosphite-betaine phosphate solid-solution crystals. At a betaine phosphate (BP) concentration of 10%, the phase transition temperature T_c1 was found to shift toward higher temperatures by about 5 K compared to betaine phosphite (BPI) crystals, where T_c1=355 K. The phase transition remains in the vicinity of the tricritical point. As the BP concentration in BPI is increased, the dielectric anomaly at T=T_c1 weakens substantially compared to pure BPI. The nonlinear temperature dependence of reciprocal dielectric permittivity in the improper ferroelastic phase of BPI_xBP_1?x crystals is described in the concentration region 0.9≤x≤1 in terms of a thermodynamic model taking into account the biquadratic relation of the nonpolar order parameter of the improper ferroelastic phase transition to polarization. The decrease in the ferroelectric phase transition temperature T_c1 (or in the temperature of loss of improper ferroelastic phase stability) with increasing BP concentration in the above limits is due to the decreasing effect of the nonpolar mode on the polar instability, which is accompanied by a weakening of the dielectric anomaly at T=T_c1     

Thermooptical and Dielectric Studies of a Calcium-Induced Ferroelectric Phase in a SrTiO<Subscript>3</Subscript> Incipient Ferroelectric

We have examined temperature changes of the light refraction, birefringence, dielectric permittivity, and dielectric hysteresis loops in Sr_{1 – x}Ca_xTiO₃ single crystals with x = 0.014 (SCT-1.4). The dielectric properties of Sr_{1 – x}Ca_xTiO₃ with x = 0.007 (SCT-0.7) have been studied. We have performed ab initio calculations of equilibrium structures and total energies for three low-temperature phases of SrTiO₃ and CaTiO₃, based on which we have determined an expected symmetry of the ground state of their solid solution and spontaneous polarization directions in a calcium-induced ferroelectric phase in Sr_{1 – x}Ca_xTiO₃. In SCT-1.4, we have separated a spontaneous contribution to the light refraction, which arises due to the spontaneous electrooptical effect caused by the spontaneous polarization and its fluctuations. From the spontaneous contribution to the light refraction, based on a previously developed our phenological approach, we have quantitatively determined for the first time the values and temperature dependences of root-mean-square fluctuations of the order parameter—the polarization P_sh = 〈P _fl ² 〉^1/2(short-range, local polar order) in the ferroelectric phase. From optical and dielectric measurements in SCT-1.4, the average value of spontaneous polarization P_s (the contribution from the long-range order) has been determined. We have estimated the values of P_sh and P_s, which characterize the short- and long-range orders in the ferroelectric phase of SCT-0.7. Separate determination of the values and temperature dependences of P_s and P_sh (which considerably exceeds the value of P_s in the ordered phase) has allowed us to reveal on a quantitative level new particular features of the formation of the induced polar phase in Sr_{1 – x}Ca_xTiO₃.     

On a Semiclassical Formula for Non-Diagonal Matrix Elements

Let H(?)=?? ²d²/dx ²+V(x) be a Schrödinger operator on the real line, W(x) be a bounded observable depending only on the coordinate and k be a fixed integer. Suppose that an energy level E intersects the potential V(x) in exactly two turning points and lies below V _∞=lim?inf?_|x|→∞ V(x). We consider the semiclassical limit n→∞, ?=? _n →0 and E _n =E where E _n is the nth eigenenergy of H(?). An asymptotic formula for 〈n|W(x)|n+k〉, the non-diagonal matrix elements of W(x) in the eigenbasis of H(?), has been known in the theoretical physics for a long time. Here it is proved in a mathematically rigorous manner.     

Nonlinear properties of barium titanate in the electric field range 0≤<Emphasis Type="Italic">E</Emphasis>≤5.5×0<Superscript>7</Superscript> V/m

X-ray structural studies and dielectric measurements of BaTiO₃ single crystals were performed in the dc electric field range 0≤E≤5.5×10⁷ V/m. The field dependence of the tetragonal cell parameter obtained was used to calculate the field dependence of the piezoelectric modulus d₃₃. The piezoelectric modulus d₃₃ and the dielectric permittivity vary in magnitude by a factor of two with the field varied in the above range. The observed nonlinear behavior is shown to fit well to a relation connecting the dielectric with the electromechanical characteristics of the crystal.     

Spin glass effects in Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>S solid solutions

The magnetization, resistance, permittivity, and thermal expansion coefficient of cation-substituted sulfides Co _x Mn_{1 ? x} S have been measured. The relationship between the magnetic, electric, and elastic subsystems of Co _x Mn_{1 ? x} S solid solutions is established and the features of physical properties characteristic of multiferroics, induced by orbital-charge ordering, are found.     

Dielectric properties of CuInP<Subscript>2</Subscript>(Se<Subscript>x</Subscript>S<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>6</Subscript> solid solutions

The dielectric properties of layered crystals of CuInP₂(Se_xS_1?x)₆ solid solutions are studied at x = 0.02, 0.05, 0.20, and 0.40. At a low selenium content (x ≤ 0.05), the solid solutions undergo a transition to the phase with short-range polar order. This transition manifests itself as a diffuse maximum in the temperature dependence of the permittivity ε′(T). Ferroelectric ordering in the solid solutions under investigation is suppressed at x > 1. It is assumed that the structural disordering initiated by the substitution of atoms in the anion sublattice of the solid solutions at 0.1 < x < 0.75 leads to the formation of the state of structured glass. The dielectric relaxation dispersion observed in the radio-frequency range at temperatures of 80–140 K is associated with the freezing of the relaxation dynamics of individual copper atoms.     

Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.     

Phase transitions and spin excitations in new multiferroics with modulated magnetic structure

Coexistence of an antiferromagnetic (modulated) structure and electric polarization has been revealed in single crystals of Eu_{1 ? x} Y_xMnO₃ (0.2 ≤ x ≤ 0.5) and Gd_{1 ? x} Y_xMnO₃ (0 ≤ x ≤ 0.2) manganites. Hence, these compounds can be considered as a new family of multiferroics. Various phase transitions, both spontaneous and induced by magnetic fields up to 250 kOe, accompanied by anomalies in magnetization, magnetostriction, permittivity, and electric polarization, have been found, and phase T-x diagrams have been constructed. In the submillimeter range (8–40 cm^?1), new spin excitations—electromagnons—have been revealed; they are excited by an electric field. It is established that suppression of the modulated structure by a magnetic field leads to the disappearance of electromagnons; this process is accompanied by significant changes in the permittivity in a wide frequency range.     

Dielectric properties of lead zirconate titanate films synthesized through oxidation of metal layers

Films of the composition Pb(Zr _x Ti_1?x )O₃ are prepared by magnetron sputtering of metal layers onto titanium substrates with subsequent heat treatment in an oxygen atmosphere. The electrical properties of the samples prepared are investigated using impedance spectroscopy in the frequency range from 10² to 5 × 10⁵ Hz at temperatures of 300–750 K. The temperature dependences of the permittivity and the dielectric loss tangent at different frequencies exhibit a behavior typical of ferroelectrics and indicate the occurrence of a ferroelectric phase transition at temperatures close to T = 663 K. Analysis of the imaginary part of the electric modulus has revealed two possible relaxation mechanisms. The activation energy for dc electrical conduction in the paraelectric phase is determined.     

Magnetocapacitance effect in Gd<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>S

The capacitance and dielectric loss tangent of Gd_xMn_1–xS (x ≤ 0.2) solid solutions have been measured at a frequency of 10 kHz without magnetic field and in a magnetic field of 8 kOe in the temperature range of 90–450 K. An increase in the permittivity and a dielectric loss maximum have been detected in the low-temperature region. It has been found that the temperature of the maximum of the imaginary part of the permittivity shifts to higher temperatures with increasing concentration. The magnetocapacitance effect has been revealed for two compositions. The dielectric loss has been described in the Debye model with “freezing” dipole moments and in the orbital-charge ordering model.     

Change in the Magnetocapacity in the Paramagnetic Region in a Cation-Substituted Manganese Selenide

The capacity and the dielectric loss tangent of a Gd _x Mn_1–xSe (x ≤ 0.2) solid solution have been measured in the frequency range 1–300 kHz without a magnetic field and in a magnetic field of 8 kOe in the temperature range 100–450 K, and the magnetic moment of the solid solution has been measured in a field of 8.6 kOe. The magnetocapacity effect and the change in the magnetocapacity sign have been observed in room temperature in the paramagnetic region. A correlation of the changes in the dielectric permittivity and the magnetic susceptibility with temperature has been revealed. The magnetocapacity is described using the model with orbital electron ordering and the Maxwell–Wagner model.     

First principles study of electronic properties,interband transitions and electron energy loss of <Emphasis Type="Italic">α</Emphasis>-graphyne

The electronic and optical properties of α-graphyne sheet are investigated by using densityfunctional theory. The results confirm that α-graphyne sheet is a zero-gap semimetal. Theoptical properties of the α-graphyne sheet such as dielectric function,refraction index, electron energy loss function, reflectivity, absorption coefficient andextinction index are calculated for both parallel and perpendicular electric fieldpolarizations. The optical spectra are strongly anisotropic along these two polarizations.For (E ∥x), absorption edge is at 0 eV, while there is noabsorption below 8 eV for (E ∥z).     

Structure and dielectric properties of solid solutions Bi7Ti4 + x W x Ta1–2x O21 (x = 0–0.5)

A number of solid solutions Bi₇Ti_{4 + x} W _x Ta_1–2x O₂₁ (x = 0–0.5) have been synthesized from oxides by solid-phase reaction. The crystal structure, the electrophysical characteristics, and the microstructure of the prepared ceramic samples have been studied. According to X-ray powder diffraction, all the compounds are single-phase with the structure of mixed-layer Aurivillius phases (m = 2.5) with the orthorhombic crystal lattice (space group I2cm, Z = 2). Temperature dependences of the relative permittivity ε(T) of the compound have been measured, from which it has been found that the Curie temperature T _C of perovskite-like oxides Bi₇Ti_{4 + x} W _x Ta_1–2x O₂₁ (x = 0–0.5) decreases linearly as substitution parameter x decreases. The activation energies of charge carriers have been found in different temperature ranges.